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1. 发明申请

US20070034146A1 Silicon manufacturing apparatus 有权
标题翻译：硅制造装置
公开(公告)号：US20070034146A1
公开(公告)日：2007-02-15
申请号：US10569149
申请日：2004-08-17
申请人： Junichirou Nakashima , Oda Hiroyuki
发明人： Junichirou Nakashima , Oda Hiroyuki
IPC分类号： C30B11/00 , C23C16/00
CPC分类号： C01B33/027 , B01J19/02 , B01J2219/0218 , B01J2219/0227 , B01J2219/0272 , C01B33/029 , C01B33/03 , C30B11/003 , C30B29/06 , Y10T117/10 , Y10T117/1004
摘要： A polycrystalline silicon production apparatus is provided whereby when deposited silicon is caused to drip down into an underlying collection part by heating the reaction tube inner surface at a temperature equal to or above the melting point of silicon, the silicon melt can be prevented from solidifying at a lower end portion of the reaction tube due to temperature lowering at the lower end portion. When a reaction tube is heated with a high frequency heating coil, the temperature lowering at a lower end portion of the reaction tube is prevented through temperature lowering prevention means which may be an infrared device capable of heating the outer periphery of the lower end portion by means of infrared rays, or which may be a lower end coil that is constituted by a coil near the lower end of the high frequency heating coil and has an increased heating intensity relative to an upper coil.
摘要翻译：提供一种多晶硅制造装置，通过在硅的熔点以上的温度下加热反应管内表面，使沉积的硅滴入下面的收集部分时，可以防止硅熔体固化由于下端部的温度降低，反应管的下端部。当用高频加热线圈加热反应管时，通过防止降温装置防止反应管的下端部的温度降低，该装置可以是可以通过下述方式加热下端部的外周的红外线装置红外线的手段，也可以是由高频加热线圈的下端附近的线圈构成的下端线圈，并且相对于上线圈具有增加的加热强度。

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