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1. 发明授权

US07871590B2 Mass of silicon solidified from molten state and process for producing the same 有权
标题翻译：从熔融状态固化的硅质量及其制造方法
公开(公告)号：US07871590B2
公开(公告)日：2011-01-18
申请号：US11597222
申请日：2005-05-23
申请人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
发明人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
IPC分类号： C01B33/02 , B29B9/00 , B22F9/00 , C30B29/06
CPC分类号： C30B29/06 , C30B11/00 , C30B11/04 , Y10T428/12479 , Y10T428/2982
摘要： A solidified mass for a high-purity multicrystal silicon material that is preferably applicable to producing crystal type silicon ingots for photo voltaics, and a process for producing the solidified mass are provided. The mass of silicon solidified from molten state is a solidified mass produced by dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, said solidified mass containing bubbles and having (i) an apparent density of not less than 1.5 g/cm3 and not more than 2.2 g/cm3 and (ii) a compressive strength of not less than 5 MPa and not more than 50 MPa. The process for producing a mass of silicon solidified from molten state includes the steps of dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, wherein the surface temperature of the vessel for receiving the molten silicon is not lower than 0° C. and not higher than 1000° C., and the receiving vessel is allowed to receive the molten silicon at a rate of 1×10−3 to 5×10−1 g/sec·cm2.
摘要翻译：提供优选适用于制造光伏型晶体硅锭的高纯度多晶硅材料的固化物质，以及固化物质的制造方法。从熔融状态固化的硅质量是通过将熔融硅滴入接收容器并允许容器接收熔融硅而产生的固化物质，所述固化物质含有气泡，并且（i）表观密度不小于1.5g cm 3，不大于2.2g / cm 3，（ii）压缩强度为5MPa以上且50MPa以下。从熔融状态固化的硅的制造方法包括将熔融硅滴入接收容器中并允许容器接收熔融硅的步骤，其中用于接收熔融硅的容器的表面温度不低于0 ℃并且不高于1000℃，并且允许接收容器以1×10 -3至5×10 -1 g / sec·cm 2的速率接收熔融硅。

2. 发明申请

US20080041309A1 Silicon Manufacturing Apparatus 审中-公开
标题翻译：硅制造设备
公开(公告)号：US20080041309A1
公开(公告)日：2008-02-21
申请号：US11659755
申请日：2005-08-10
申请人： Junichirou Nakashima , Satoru Wakamatsu , Shigeki Sugimura
发明人： Junichirou Nakashima , Satoru Wakamatsu , Shigeki Sugimura
IPC分类号： C01B33/03
CPC分类号： C01B33/03 , C01B33/027 , C30B29/06 , C30B33/00
摘要： It is an object to provide a silicon manufacturing apparatus that suppresses a silicon deposition to the bottom end portion of the reaction vessel and to a section other than the inside face of the reaction vessel except for the bottom end portion, thereby enabling a stable operation for a long time, for a silicon manufacturing apparatus that introduces a reaction gas to the inside wall of the heated reaction vessel to deposit silicon and that withdraws the deposited silicon from an opening at the bottom end portion of the reaction vessel. A first gas supply port 31 that is formed by a circular slit and that supplies a sealing gas and/or an etching gas to the bottom end portion is formed on the peripheral side around the bottom end portion of the reaction vessel. In addition, a second gas supply port 33 is formed at the position separate from the first gas supply port 31, and a sealing gas and/or an etching gas are supplied from the second gas supply port 33 to a wall face of the member forming the first gas supply port 31 at the outside periphery of the first gas supply port 31.
摘要翻译：本发明的目的是提供一种硅制造装置，其抑制反应容器的底端部的硅沉积以及除了底端部以外的除了反应容器的内表面以外的部分，从而能够稳定地进行长时间地，用于将反应气体引入加热的反应容器的内壁以沉积硅并从反应容器的底端部分的开口排出沉积的硅的硅制造装置。在反应容器的底端部周围的周边形成有由圆形狭缝形成并且向底端部供给密封气体和/或蚀刻气体的第一气体供给口31。另外，在与第一气体供给口31分离的位置上形成第二气体供给口33，将密封气体和/或蚀刻气体从第二气体供给口33供给到成形体的壁面在第一气体供给口31的外周的第一气体供给口31。

3. 发明申请

US20090311450A1 Tubular container made of carbon 审中-公开
标题翻译：由碳制成的管状容器
公开(公告)号：US20090311450A1
公开(公告)日：2009-12-17
申请号：US11630663
申请日：2005-06-23
申请人： Junichirou Nakashima , Manabu Sakita , Hiroyuki Oda , Shigeki Sugimura
发明人： Junichirou Nakashima , Manabu Sakita , Hiroyuki Oda , Shigeki Sugimura
IPC分类号： B32B1/08
CPC分类号： C30B11/002 , B22D41/12 , B22D41/502 , C04B35/52 , C04B2235/94 , C04B2235/963 , F27D1/04 , Y10T428/13
摘要： It is an object of the present invention to prevent leakage of a raw material gas or molten silicon in a carbon columnar container which is constructed by connecting plural carbon cylindrical members to each other by a screw portion provided along the periphery of an end of each of the cylindrical members, by sealing a gap present at the connection portion through a high-reliability method that causes no cracking or the like. The carbon columnar container of the invention is a carbon columnar container constructed so as to form a multistage structure by connecting plural carbon cylindrical members to each other by a screw portion provided along the periphery of an end of each of the cylindrical members, wherein each of the cylindrical members connected to each other has such a ring-shaped plane extending from the inner peripheral wall in the diameter direction as to form a ring-shaped butt area on the inner peripheral wall side when the cylindrical members are connected, and the sum of surface roughness (Ra) of the ring-shaped planes to form the butt area is in the range of 1 to 100 μm.
摘要翻译：本发明的目的是防止原料气体或熔融硅在碳柱容器中的泄漏，该碳柱容器是通过沿着每个通过利用不产生龟裂等的高可靠性方法密封连接部分处的间隙来形成圆柱形部件。本发明的碳柱状容器是碳柱状容器，其构造为通过沿着每个圆柱形构件的端部的周边设置的螺纹部分将多个碳素筒构件彼此连接而形成多级结构，其中，彼此连接的圆筒形构件具有这样一个环形平面，该圆形面从直径方向的内周壁延伸，以便在圆柱形构件连接时在内周壁侧形成环形对接区域，并且形成对接面的环形面的表面粗糙度（Ra）在1〜100μm的范围内。

4. 发明申请

US20070034146A1 Silicon manufacturing apparatus 有权
标题翻译：硅制造装置
公开(公告)号：US20070034146A1
公开(公告)日：2007-02-15
申请号：US10569149
申请日：2004-08-17
申请人： Junichirou Nakashima , Oda Hiroyuki
发明人： Junichirou Nakashima , Oda Hiroyuki
IPC分类号： C30B11/00 , C23C16/00
CPC分类号： C01B33/027 , B01J19/02 , B01J2219/0218 , B01J2219/0227 , B01J2219/0272 , C01B33/029 , C01B33/03 , C30B11/003 , C30B29/06 , Y10T117/10 , Y10T117/1004
摘要： A polycrystalline silicon production apparatus is provided whereby when deposited silicon is caused to drip down into an underlying collection part by heating the reaction tube inner surface at a temperature equal to or above the melting point of silicon, the silicon melt can be prevented from solidifying at a lower end portion of the reaction tube due to temperature lowering at the lower end portion. When a reaction tube is heated with a high frequency heating coil, the temperature lowering at a lower end portion of the reaction tube is prevented through temperature lowering prevention means which may be an infrared device capable of heating the outer periphery of the lower end portion by means of infrared rays, or which may be a lower end coil that is constituted by a coil near the lower end of the high frequency heating coil and has an increased heating intensity relative to an upper coil.
摘要翻译：提供一种多晶硅制造装置，通过在硅的熔点以上的温度下加热反应管内表面，使沉积的硅滴入下面的收集部分时，可以防止硅熔体固化由于下端部的温度降低，反应管的下端部。当用高频加热线圈加热反应管时，通过防止降温装置防止反应管的下端部的温度降低，该装置可以是可以通过下述方式加热下端部的外周的红外线装置红外线的手段，也可以是由高频加热线圈的下端附近的线圈构成的下端线圈，并且相对于上线圈具有增加的加热强度。

5. 发明授权

US08282904B2 Cylindrical vessel made of carbon and process for making silicon 失效
标题翻译：由碳制成的圆柱形容器和制造硅的工艺
公开(公告)号：US08282904B2
公开(公告)日：2012-10-09
申请号：US11630182
申请日：2005-06-22
申请人： Junichirou Nakashima , Satoru Wakamatsu , Manabu Sakita
发明人： Junichirou Nakashima , Satoru Wakamatsu , Manabu Sakita
IPC分类号： C01B33/00 , C01B33/02 , C21B3/00 , B22D41/05
CPC分类号： C01B33/03 , C04B35/565 , C04B2235/77 , C04B2235/9607
摘要： A cylindrical vessel made of carbon is used in the production of silicon. The inner surface of the vessel comes into contact with a silicon melt, wherein the permeation with silicon melt is reduced, formation of SiC is suppressed, and the vessel is resistant to deformation even when volumetric expansion ascribable to silicon is brought about. The carbon-made cylindrical vessel is made of a carbon material having a bulk specific gravity of 1.8 or more. The thermal expansion coefficient of the carbon material at 350 to 450° C. is preferably 3.5×10−6/° C. to 6.0×10−6/° C. A process for producing silicon uses said vessel wherein a chlorosilane is reacted with hydrogen.
摘要翻译：在硅的制造中使用由碳制成的圆柱形容器。容器的内表面与硅熔体接触，其中与硅熔体的渗透减少，SiC的形成被抑制，并且即使产生由硅引起的体积膨胀也容易发生变形。碳制圆柱形容器由体积比重为1.8以上的碳材料制成。 350〜450℃的碳材料的热膨胀系数优选为3.5×10 -6 /℃〜6.0×10 -6 /℃。硅的制造方法使用所述容器，其中氯硅烷与氢。

6. 发明申请

US20080038177A1 Cooled Lump From Molten Silicon And Process For Producing The Same 有权
标题翻译：来自熔融硅的冷却块及其制造方法
公开(公告)号：US20080038177A1
公开(公告)日：2008-02-14
申请号：US11597222
申请日：2005-05-23
申请人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
发明人： Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
IPC分类号： C01B33/02 , C30B29/06
CPC分类号： C30B29/06 , C30B11/00 , C30B11/04 , Y10T428/12479 , Y10T428/2982
摘要： A solidified mass for a high-purity multicrystal silicon material that is preferably applicable to producing crystal type silicon ingots for photo voltaics, and a process for producing the solidified mass are provided. The mass of silicon solidified from molten state is a solidified mass produced by dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, said solidified mass containing bubbles and having (i) an apparent density of not less than 1.5 g/cm3 and not more than 2.2 g/cm3 and (ii) a compressive strength of not less than 5 MPa and not more than 50 MPa. The process for producing a mass of silicon solidified from molten state includes the steps of dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, wherein the surface temperature of the vessel for receiving the molten silicon is not lower than 0° C. and not higher than 1000° C., and the receiving vessel is allowed to receive the molten silicon at a rate of 1×10−3 to 5×10−1 g/sec·cm2.
摘要翻译：提供优选适用于制造光伏型晶体硅锭的高纯度多晶硅材料的固化物质，以及固化物质的制造方法。从熔融状态固化的硅质量是通过将熔融硅滴入接收容器并允许容器接收熔融硅而产生的固化物质，所述固化物质含有气泡，并且（i）表观密度不小于1.5g / cm 3以上且2.2g / cm 3以下，（ii）抗压强度为5MPa以上且50MPa以下。从熔融状态固化的硅的制造方法包括将熔融硅滴入接收容器中并允许容器接收熔融硅的步骤，其中用于接收熔融硅的容器的表面温度不低于0 并且不高于1000℃，并且允许接收容器以1×10 -3至5×10 -1 / g的速率接收熔融硅， sec.cm <2> 。

7. 发明申请

US20080025901A1 Cylindrical Container Made of Carbon and Method for Producing Silicon 失效
标题翻译：由碳制成的圆柱形容器和生产硅的方法
公开(公告)号：US20080025901A1
公开(公告)日：2008-01-31
申请号：US11630182
申请日：2005-06-22
申请人： Junichirou Nakashima , Satoru Wakamatsu , Manabu Sakita
发明人： Junichirou Nakashima , Satoru Wakamatsu , Manabu Sakita
IPC分类号： C01B33/02 , B22D41/00
CPC分类号： C01B33/03 , C04B35/565 , C04B2235/77 , C04B2235/9607
摘要： A cylindrical vessel made of carbon is used in the production of silicon. The inner surface of the vessel comes into contact with a silicon melt, wherein the permeation with silicon melt is reduced, formation of SiC is suppressed, and the vessel is resistant to deformation even when volumetric expansion ascribable to silicon is brought about. The carbon-made cylindrical vessel is made of a carbon material having a bulk specific gravity of 1.8 or more. The thermal expansion coefficient of the carbon material at 350 to 450° C. is preferably 3.5×10−6/° C. to 6.0×10−6/° C. A process for producing silicon uses said vessel wherein a chlorosilane is reacted with hydrogen.
摘要翻译：在硅的制造中使用由碳制成的圆柱形容器。容器的内表面与硅熔体接触，其中与硅熔体的渗透减少，SiC的形成被抑制，并且即使产生由硅引起的体积膨胀也容易发生变形。碳制圆柱形容器由体积比重为1.8以上的碳材料制成。在350至450℃下，碳材料的热膨胀系数优选为3.5×10 -6 /℃至6.0×10 -6 /℃。用于制造硅的所述容器，其中氯硅烷与氢反应。

8. 发明授权

US07993455B2 Silicon manufacturing apparatus 有权
标题翻译：硅制造装置
公开(公告)号：US07993455B2
公开(公告)日：2011-08-09
申请号：US10569149
申请日：2004-08-17
申请人： Junichirou Nakashima , Hiroyuki Oda
发明人： Junichirou Nakashima , Hiroyuki Oda
IPC分类号： C30B21/02
CPC分类号： C01B33/027 , B01J19/02 , B01J2219/0218 , B01J2219/0227 , B01J2219/0272 , C01B33/029 , C01B33/03 , C30B11/003 , C30B29/06 , Y10T117/10 , Y10T117/1004
摘要： A polycrystalline silicon production apparatus is provided whereby when deposited silicon is caused to drip down into an underlying collection part by heating the reaction tube inner surface at a temperature equal to or above the melting point of silicon, the silicon melt can be prevented from solidifying at a lower end portion of the reaction tube due to temperature lowering at the lower end portion. When a reaction tube is heated with a high frequency heating coil, the temperature lowering at a lower end portion of the reaction tube is prevented through temperature lowering prevention means which may be an infrared device capable of heating the outer periphery of the lower end portion by means of infrared rays, or which may be a lower end coil that is constituted by a coil near the lower end of the high frequency heating coil and has an increased heating intensity relative to an upper coil.
摘要翻译：提供一种多晶硅制造装置，通过在硅的熔点以上的温度下加热反应管内表面，使沉积的硅滴入下面的收集部分时，可以防止硅熔体固化由于下端部的温度降低，反应管的下端部。当用高频加热线圈加热反应管时，通过防止降温装置防止反应管的下端部的温度降低，该装置可以是可以通过下述方式加热下端部的外周的红外线装置红外线的手段，也可以是由高频加热线圈的下端附近的线圈构成的下端线圈，相对于上线圈具有增加的加热强度。

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