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1. 发明授权

US08586481B2 Chemical planarization of copper wafer polishing 有权
标题翻译：铜晶片抛光的化学平面化
公开(公告)号：US08586481B2
公开(公告)日：2013-11-19
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

2. 发明申请

US20120064801A1 Feedback Control of Polishing Using Optical Detection of Clearance 有权
标题翻译：使用光学检测清除的抛光反馈控制
公开(公告)号：US20120064801A1
公开(公告)日：2012-03-15
申请号：US13223159
申请日：2011-08-31
申请人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号： B24B49/00
CPC分类号： B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译：控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。在抛光期间，用原位监测系统监测基底以产生测量序列。测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。使用至少一个调整的抛光压力来抛光第二基底。

3. 发明申请

US20110294293A1 CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING 有权
标题翻译：铜波抛光的化学平面化
公开(公告)号：US20110294293A1
公开(公告)日：2011-12-01
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

4. 发明申请

US20100121828A1 RESOURCE CONSTRAINT AWARE NETWORK FILE SYSTEM 审中-公开
标题翻译：资源约束网络文件系统
公开(公告)号：US20100121828A1
公开(公告)日：2010-05-13
申请号：US12616672
申请日：2009-11-11
申请人： You Wang
发明人： You Wang
IPC分类号： G06F17/00
CPC分类号： G06F16/188
摘要： A system and method for presenting a uniform file system interface for accessing multiple storage devices where at least one of the storage devices has some resource constraints. The system includes an intermediary device abstracting the individual storage devices and aggregating the storage available on each device into a single volume while accounting for each individual storage device's resource constraints.
摘要翻译：一种用于呈现用于访问多个存储设备的统一文件系统接口的系统和方法，其中至少一个存储设备具有一些资源限制。该系统包括抽象各个存储设备并将每个设备上可用的存储集合为单个卷的中间设备，同时考虑每个单独的存储设备的资源约束。

5. 发明授权

US07586968B2 Heater-attached alkali-encapsulated cell and alkali laser apparatus 失效
标题翻译：加热器附着碱封装电池和碱激光设备
公开(公告)号：US07586968B2
公开(公告)日：2009-09-08
申请号：US11878745
申请日：2007-07-26
申请人： Minoru Niigaki , You Wang , Yujin Zheng , Hirofumi Kan
发明人： Minoru Niigaki , You Wang , Yujin Zheng , Hirofumi Kan
IPC分类号： H01S3/22
CPC分类号： H01S3/227 , H01S3/02 , H01S3/041 , H01S3/08054 , H01S3/0815 , H01S3/09415 , H01S3/1028 , H01S5/4062
摘要： An alkali-encapsulated cell internally having an alkali metal vapor G encapsulated is provided with first and second heaters 11, 12. The alkali-encapsulated cell 10 has first and second end faces 10a, 10b opposed to each other, and a side face 10c connecting the two end faces 10a, 10b. Each of the first and second heaters 11, 12 has a covering portion 11B, 12B and an extending portion 11C, 12C. Some portions of the alkali-encapsulated cell 10 are inserted in the covering portions 11B, 12B. On the other hand, the extending portions 11C, 12C extend in directions away from the alkali-encapsulated cell 10. The first and second heaters 11, 12 are separated from each other with a distance d0 between them in an opposing direction of the first and second end faces 10a, 10b.
摘要翻译：在内部具有封入了碱金属蒸气G的碱封装的电池设置有第一和第二加热器11,12。碱封装的电池10具有彼此相对的第一和第二端面10a，10b，以及连接两个端面10a，10b。第一和第二加热器11,12中的每一个具有覆盖部分11B，12B和延伸部分11C，12C。碱封装电池10的一部分插入到覆盖部11B，12B中。另一方面，延伸部分11C，12C沿着远离碱封装的电池10的方向延伸。第一和第二加热器11,12彼此分开，在它们之间的距离d0在第一和第二加热器10的相反方向上第二端面10a，10b。

6. 发明授权

US07422982B2 Method and apparatus for electroprocessing a substrate with edge profile control 失效
标题翻译：用边缘轮廓控制对基底进行电处理的方法和装置
公开(公告)号：US07422982B2
公开(公告)日：2008-09-09
申请号：US11483843
申请日：2006-07-07
申请人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
发明人： You Wang , Jie Diao , Stan D. Tsai , Lakshmanan Karuppiah
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： B23H5/08 , C25D17/10 , C25D17/12 , C25D21/12
摘要： A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, and biasing a second electrode disposed radially inward of the first electrode with a bias that is different than the bias applied to the first electrode. In one embodiment, the first electrode is coated with an inert material and in this way the same polish rate is obtained with a lower potential level applied to the first electrode.
摘要翻译：提供了一种用于电子处理衬底的方法和装置。在一个实施例中，用于对衬底进行电处理的方法包括以下步骤：偏置第一电极以在电极和衬底之间建立第一电处理区，并且以不同于第一电极的偏压来偏置设置在第一电极的径向内侧的第二电极施加到第一电极的偏压。在一个实施例中，第一电极被涂覆有惰性材料，并且以这种方式获得相同的抛光速率，并且施加到第一电极的较低电位电平。

7. 发明申请

US20080065703A1 Configurable views of archived data storage 审中-公开
标题翻译：归档数据存储的可配置视图
公开(公告)号：US20080065703A1
公开(公告)日：2008-03-13
申请号：US11710238
申请日：2007-02-22
申请人： You Wang , Steven Hartung , Dworkin Muller
发明人： You Wang , Steven Hartung , Dworkin Muller
IPC分类号： G06F17/30 , G06F12/00
CPC分类号： G06F1/3268 , G06F1/3203 , G06F16/172 , Y02D10/154
摘要： In one embodiment, a method for creating a view for a plurality of data units is provided. A portion of the plurality of data units are stored in one or more storage drives that are in a lower power mode of operation in the storage system. The method includes determining a subset of data units stored in a storage system based on one or more filter criteria. Metadata is determined that represents the subset of data units in the storage system. A view is then created from the metadata. For example, a dynamic or static view may be created. The view is then stored such that it is always accessible on an always on storage drive. The metadata may be used to provide information about the data units in the storage drives that are in a lower power mode of operation without having to power on the storage drives.
摘要翻译：在一个实施例中，提供了一种用于创建多个数据单元的视图的方法。多个数据单元的一部分存储在存储系统中处于较低功率操作模式的一个或多个存储驱动器中。该方法包括基于一个或多个过滤器标准确定存储在存储系统中的数据单元的子集。确定代表存储系统中数据单元子集的元数据。然后从元数据创建视图。例如，可以创建动态或静态视图。然后存储视图，使其始终可以在始终存储驱动器上访问。可以使用元数据来提供关于处于较低功率操作模式的存储驱动器中的数据单元的信息，而不必对存储驱动器通电。

8. 发明申请

US20070161250A1 Method for electrochemically mechanically polishing a conductive material on a substrate 失效
标题翻译：在基板上进行电化学机械研磨导电材料的方法
公开(公告)号：US20070161250A1
公开(公告)日：2007-07-12
申请号：US11328958
申请日：2006-01-09
申请人： You Wang , Zhihong Wang , Renhe Jia , Stan Tsai , Yongqi Hu
发明人： You Wang , Zhihong Wang , Renhe Jia , Stan Tsai , Yongqi Hu
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , B23H5/08 , H01L21/32125
摘要： Aspects of the present invention include a method and an apparatus that may be utilized to reduce dishing and improve cleaning efficiency of a material layer residue (e.g., copper residual) by varying a substrate potential in a substrate processing system. For example, by utilizing multiple polishing steps and applying different voltages (e.g., while a substrate is being in a polishing station), ECMP can be used to effectively reduce dishing and it can be used to enhance copper residual cleaning as well as minimizing a possibility of arcing, which can occur at the end of the polishing process, when a substrate is moved from a polishing station.
摘要翻译：本发明的方面包括可以通过改变衬底处理系统中的衬底电位来减少凹陷并提高材料层残留物（例如铜残留物）的清洁效率的方法和装置。例如，通过利用多个抛光步骤和施加不同的电压（例如，当衬底处于抛光站中时），ECMP可以用于有效地减少凹陷，并且可以用于增强铜残留清洁以及最小化可能性当抛光工位移动基板时，可能在抛光过程结束时发生电弧。

9. 发明申请

US20060249395A1 Process and composition for electrochemical mechanical polishing 审中-公开
标题翻译：电化学机械抛光的工艺和组成
公开(公告)号：US20060249395A1
公开(公告)日：2006-11-09
申请号：US11389867
申请日：2006-03-27
申请人： You Wang , Junzi Zhao , Jie Diao , Renhe Jia , Stan Tsai , Lakshmanan Karuppiah , Robert Ewald
发明人： You Wang , Junzi Zhao , Jie Diao , Renhe Jia , Stan Tsai , Lakshmanan Karuppiah , Robert Ewald
IPC分类号： C09K13/00 , B23H9/00 , B23H3/00
CPC分类号： C09K3/1463 , B23H5/08
摘要： Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a leveler a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.
摘要翻译：提供了用于处理其上设置有导电材料层的基板的组合物和方法。在一个实施方案中，提供了一种用于处理其上设置有导电材料层的基材的组合物，其组成包括酸性电解质，螯合剂，缓蚀剂，钝化聚合物材料，pH调节剂，整理剂，溶剂，并且pH在约3至约10之间。该组合物用于在导电材料层上形成钝化层的方法，研磨钝化层以暴露导电材料层的一部分，向衬底施加偏压，以及去除导电材料层。

10. 发明申请

US20050274622A1 Plating chemistry and method of single-step electroplating of copper on a barrier metal 审中-公开
标题翻译：电镀化学和铜在屏障金属上的单步电镀方法
公开(公告)号：US20050274622A1
公开(公告)日：2005-12-15
申请号：US11012965
申请日：2004-12-15
申请人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , You Wang
发明人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , You Wang
IPC分类号： C25D3/00 , C25D3/38 , C25D5/18 , C25D5/34 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76864
摘要： Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
摘要翻译：已经描述了用VIII族金属层对基板表面进行镀铜的方法的实施例。在一个实施例中，在基板表面上用第VIII族金属层电镀铜的方法包括通过去除第VIII族金属表面氧化物层和/或表面污染物并将该基板镀在包括约50g / l至约300g / l的硫酸，其初始电镀电流高于临界电流密度，以在衬底表面上沉积连续的铜层。通过在含酸浴中进行阴极处理，或通过在含酸浴中进行阴极处理，可以通过在具有含氢气体环境和/或非反应性气体的Ru的环境中对基底进行退火来实现基底的预处理将基板浸入含酸浴中。

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