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1. 发明申请

US20050274622A1 Plating chemistry and method of single-step electroplating of copper on a barrier metal 审中-公开
标题翻译：电镀化学和铜在屏障金属上的单步电镀方法
公开(公告)号：US20050274622A1
公开(公告)日：2005-12-15
申请号：US11012965
申请日：2004-12-15
申请人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , You Wang
发明人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , You Wang
IPC分类号： C25D3/00 , C25D3/38 , C25D5/18 , C25D5/34 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76864
摘要： Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
摘要翻译：已经描述了用VIII族金属层对基板表面进行镀铜的方法的实施例。在一个实施例中，在基板表面上用第VIII族金属层电镀铜的方法包括通过去除第VIII族金属表面氧化物层和/或表面污染物并将该基板镀在包括约50g / l至约300g / l的硫酸，其初始电镀电流高于临界电流密度，以在衬底表面上沉积连续的铜层。通过在含酸浴中进行阴极处理，或通过在含酸浴中进行阴极处理，可以通过在具有含氢气体环境和/或非反应性气体的Ru的环境中对基底进行退火来实现基底的预处理将基板浸入含酸浴中。

2. 发明申请

US20070125657A1 Method of direct plating of copper on a substrate structure 审中-公开
标题翻译：在基板结构上直接电镀铜的方法
公开(公告)号：US20070125657A1
公开(公告)日：2007-06-07
申请号：US11255368
申请日：2005-10-21
申请人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , John Dukovic , Aron Rosenfeld , Lei Zhu
发明人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , John Dukovic , Aron Rosenfeld , Lei Zhu
IPC分类号： C25D5/34 , C25D3/38
CPC分类号： C25D3/38 , C25D5/10 , C25D5/34 , C25D5/54 , H01L21/2885 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH≧7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.
摘要翻译：本发明教导了一种将铜籽晶层沉积到基底表面上的方法，通常在阻挡层上。阻挡层可以包括难熔金属和/或第8,9或10族金属。该方法包括在含酸溶液中阴极预处理底物。然后将衬底放入包括络合的铜离子的铜溶液（pH> = 7.0）中，并且在衬底表面上施加电流或偏压。络合的铜离子被还原以将铜籽晶层沉积在阻挡层上。在一个方面，然后使用复杂的碱性浴来电化学地在衬底表面上印刷间隙填充层，然后在相同的浴中过量填充。另一方面，酸性浴ECP间隙填充过程和过度填充过程遵循碱性种子层过程。

3. 发明申请

US20090120799A1 MULTIPLE-STEP ELECTRODEPOSITION PROCESS FOR DIRECT COPPER PLATING ON BARRIER METALS 审中-公开
标题翻译：用于直接镀铜的多级电沉积工艺
公开(公告)号：US20090120799A1
公开(公告)日：2009-05-14
申请号：US12332882
申请日：2008-12-11
申请人： Zhi-Wen Sun , Renren He , You Wang , Michael X. Yang
发明人： Zhi-Wen Sun , Renren He , You Wang , Michael X. Yang
IPC分类号： C25D3/38 , C25D5/50
CPC分类号： H01L21/76864 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/76868 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.
摘要翻译：本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。

4. 发明申请

US20050006245A1 Multiple-step electrodeposition process for direct copper plating on barrier metals 审中-公开
标题翻译：用于在阻挡金属上直接镀铜的多步电沉积工艺
公开(公告)号：US20050006245A1
公开(公告)日：2005-01-13
申请号：US10616097
申请日：2003-07-08
申请人： Zhi-Wen Sun , Renren He , You Wang , Michael Yang
发明人： Zhi-Wen Sun , Renren He , You Wang , Michael Yang
IPC分类号： C25D3/38 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768 , C25D5/02
CPC分类号： H01L21/76864 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/76868 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.
摘要翻译：本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。

5. 发明申请

US20050274621A1 Method of barrier layer surface treatment to enable direct copper plating on barrier metal 审中-公开
标题翻译：阻挡层表面处理方法，可以在阻挡金属上直接镀铜
公开(公告)号：US20050274621A1
公开(公告)日：2005-12-15
申请号：US11007857
申请日：2004-12-09
申请人： Zhi-Wen Sun , Renren He
发明人： Zhi-Wen Sun , Renren He
IPC分类号： C25D5/34 , C25D7/04 , C25D7/12 , H01L21/02 , H01L21/288 , H01L21/768 , H01L23/532
CPC分类号： H01L21/02068 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76861 , H01L21/76864 , H01L21/76871 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of a method of barrier layer surface treatment to enable direct copper plating without copper seed layer. In one embodiment, a method of plating copper on a substrate with a group VIII metal layer on top comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating copper on the pre-treated group VIII metal surface. Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath
摘要翻译：一种阻挡层表面处理方法的实施例，可实现铜铜层的直接镀铜。在一个实施例中，在顶部上具有VIII族金属层的基板上镀铜的方法包括通过去除第VIII族金属表面氧化物层和/或表面污染物并在预处理组上镀铜来预处理该衬底表面 Ⅷ金属表面。可以通过在含酸浴中进行阴极处理，在含有氢的气体环境和/或非反应性气体的Ru的环境中将基板进行退火来进行基板的预处理，或者通过浸渍在含酸浴中的底物

6. 发明授权

US06746591B2 ECP gap fill by modulating the voltate on the seed layer to increase copper concentration inside feature 失效
标题翻译：通过调制种子层上的电压来增加ECP间隙填充特征，增加铜浓度
公开(公告)号：US06746591B2
公开(公告)日：2004-06-08
申请号：US09981508
申请日：2001-10-16
申请人： Bo Zheng , Renren He , Girish Dixit
发明人： Bo Zheng , Renren He , Girish Dixit
IPC分类号： C25D518
CPC分类号： H01L21/2885 , C25D5/18 , C25D7/123 , C25D17/001 , H01L21/76877
摘要： A method and apparatus for electrochemically depositing a metal onto a substrate. The apparatus generally includes a head assembly having a cathode and a wafer holder disposed above the cathode. The apparatus further includes a process kit disposed below the head assembly, the process kit including an electrolyte container configured to receive and maintain a fluid electrolyte therein, and an anode disposed in the electrolyte container. The apparatus further includes a power supply in electrical communication with the cathode and the anode, the power supply being configured to provide a varying amplitude electrical signal to the anode and cathode. The method generally includes providing an electrolyte container configured to receive and maintain a fluid electrolyte therein, the electrolyte container having an anode disposed within the electrolyte container, providing a head assembly positioned above the electrolyte container, the head assembly including a wafer holder for supporting a wafer and a cathode, and positioning a wafer in the electrolyte container in contact with the fluid electrolyte, and applying a varying amplitude waveform to the cathode and anode in an electroplating process.
摘要翻译：一种将金属电化学沉积到基底上的方法。该方法通常包括提供构造成在其中接收和保持流体电解质的电解质容器，电解质容器具有设置在电解质容器内的阳极，提供位于电解质容器上方的头组件，头组件包括用于支撑晶片和阴极，并且将晶片定位在与流体电解质接触的电解质容器中，以及在电镀工艺中向阴极和阳极施加变化的振幅波形。

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