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1. 发明授权

US09073169B2 Feedback control of polishing using optical detection of clearance 有权
标题翻译：使用光学检测间隙的抛光反馈控制
公开(公告)号：US09073169B2
公开(公告)日：2015-07-07
申请号：US13223159
申请日：2011-08-31
申请人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号： G06F19/00 , H01L21/00 , B24B49/00 , B24B37/005 , B24B37/04 , B24B37/10 , B24B37/30 , B24B49/12 , G01B11/06
CPC分类号： B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译：控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。在抛光期间，用原位监测系统监测基底以产生测量序列。测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。使用至少一个调整的抛光压力来抛光第二基底。

2. 发明申请

US20120064801A1 Feedback Control of Polishing Using Optical Detection of Clearance 有权
标题翻译：使用光学检测清除的抛光反馈控制
公开(公告)号：US20120064801A1
公开(公告)日：2012-03-15
申请号：US13223159
申请日：2011-08-31
申请人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人： Kun Xu , Ingemar Carlsson , Feng Q. Liu , David Maxwell Gage , You Wang , Dominic J. Benvegnu , Boguslaw A. Swedek , Yuchun Wang , Pierre Fontarensky , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号： B24B49/00
CPC分类号： B24B37/005 , B24B37/042 , B24B37/107 , B24B37/30 , B24B49/12 , G01B11/0683
摘要： A method of controlling polishing includes polishing a first substrate having an overlying layer on an underlying layer or layer structure. During polishing, the substrate is monitored with an in-situ monitoring system to generate a sequence of measurements. The measurements are sorted into groups, each group associated with a different zone of a plurality of zones on the substrate. For each zone, a time at which the overlying layer is cleared is determined based on the measurements from the associated group. At least one second adjusted polishing pressure for at least zone is calculated based on a pressure applied in the at least one zone during polishing the substrate, the time for the at least one zone, and the time for another zone. A second substrate is polished using the at least one adjusted polishing pressure.
摘要翻译：控制抛光的方法包括在下层或层结构上抛光具有上层的第一衬底。在抛光期间，用原位监测系统监测基底以产生测量序列。测量被分组成组，每个组与衬底上的多个区域的不同区域相关联。对于每个区域，基于来自关联组的测量来确定覆盖层被清除的时间。基于在抛光衬底期间在至少一个区域中施加的压力，至少一个区域的时间和另一个区域的时间来计算至少一个至少一个区域的调整后的第二抛光压力。使用至少一个调整的抛光压力来抛光第二基底。

3. 发明授权

US08586481B2 Chemical planarization of copper wafer polishing 有权
标题翻译：铜晶片抛光的化学平面化
公开(公告)号：US08586481B2
公开(公告)日：2013-11-19
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

4. 发明申请

US20110294293A1 CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING 有权
标题翻译：铜波抛光的化学平面化
公开(公告)号：US20110294293A1
公开(公告)日：2011-12-01
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

5. 发明授权

US08210900B2 Dishing and defect control of chemical mechanical polishing using real-time adjustable additive delivery 有权
标题翻译：化学机械抛光的抛光和缺陷控制使用实时可调添加剂递送
公开(公告)号：US08210900B2
公开(公告)日：2012-07-03
申请号：US12263237
申请日：2008-10-31
申请人： Wen-Chiang Tu , You Wang , Yuchun Wang , Lakshmanan Karuppiah
发明人： Wen-Chiang Tu , You Wang , Yuchun Wang , Lakshmanan Karuppiah
IPC分类号： B24B49/00
CPC分类号： B24B37/04 , B24B57/02
摘要： A method and apparatus for polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.
摘要翻译：一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。在一个实施例中，提供了一种处理半导体衬底的方法。该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

6. 发明申请

US20130186850A1 SLURRY FOR COBALT APPLICATIONS 审中-公开
标题翻译：浆料应用
公开(公告)号：US20130186850A1
公开(公告)日：2013-07-25
申请号：US13357535
申请日：2012-01-24
申请人： You Wang , Chenhao Ge , Yufei Chen , Yuchun Wang , Wen-Chiang Tu , Lakshmanan Karuppiah
发明人： You Wang , Chenhao Ge , Yufei Chen , Yuchun Wang , Wen-Chiang Tu , Lakshmanan Karuppiah
IPC分类号： C09K13/00 , C09K13/02 , H05K3/26
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212 , H01L23/53238 , H01L23/53257 , H01L2924/0002 , H05K3/045 , H05K3/107 , H01L2924/00
摘要： A slurry for chemical mechanical of a cobalt layer or a conductive layer over a cobalt layer includes abrasive particles, an organic complexing compound for Cu or Co ion complexion, a Co corrosion inhibitor that is 0.01-1.0 wt % of the slurry, an oxidizer, and a solvent. The slurry has a pH of 7-12.
摘要翻译：用于钴层或钴层上的导电层的化学机械的浆料包括磨料颗粒，用于Cu或Co离子表面的有机络合化合物，作为浆料的0.01-1.0重量％的Co腐蚀抑制剂，氧化剂，和溶剂。浆液的pH为7-12。

7. 发明申请

US20100112903A1 DISHING AND DEFECT CONTROL OF CHEMICAL MECHANICAL POLISHING USING REAL-TIME ADJUSTABLE ADDITIVE DELIVERY 有权
标题翻译：使用实时可调式添加剂进行化学机械抛光的抛光和缺陷控制
公开(公告)号：US20100112903A1
公开(公告)日：2010-05-06
申请号：US12263237
申请日：2008-10-31
申请人： WEN-CHIANG TU , You Wang , Yuchun Wang , Lakshmanan Karuppiah
发明人： WEN-CHIANG TU , You Wang , Yuchun Wang , Lakshmanan Karuppiah
IPC分类号： B24B49/04 , B24B7/22 , B24B57/02
CPC分类号： B24B37/04 , B24B57/02
摘要： A method and apparatus for polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment a method of processing a semiconductor substrate is provided. The method comprises positioning a substrate on a polishing apparatus comprising a polishing pad assembly, delivering a polishing slurry to a surface of the polishing pad assembly, polishing the substrate with the surface of the polishing pad assembly, monitoring the removal rate of material from a plurality of regions on the surface of the substrate, determining whether the plurality of regions on the surface of the substrate are polishing uniformly, and selectively delivering a polishing slurry additive to at least one region of the plurality of regions to obtain a uniform removal rate of material from the plurality of regions on the surface of the substrate, wherein the removal rate of material from the at least one region is different than at least one other region of the plurality of regions.
摘要翻译：一种用于通过化学机械抛光工艺抛光或平面化基板的方法和装置。在一个实施例中，提供了一种处理半导体衬底的方法。该方法包括将衬底定位在包括抛光垫组件的抛光设备上，将抛光浆料输送到抛光垫组件的表面，用抛光垫组件的表面抛光衬底，监测来自多个部件的材料的去除速率在基板表面上确定基板表面上的多个区域是否均匀抛光，并且将抛光浆料添加剂选择性地输送到多个区域中的至少一个区域以获得均匀的材料去除速率从所述衬底表面上的多个区域中去除所述至少一个区域的材料的去除速率不同于所述多个区域中的至少一个其它区域。

8. 发明申请

US20130189843A1 SLURRY FOR PLANARIZING PHOTORESIST 审中-公开
标题翻译：用于平面化光刻胶的浆料
公开(公告)号：US20130189843A1
公开(公告)日：2013-07-25
申请号：US13747825
申请日：2013-01-23
申请人： You Wang , Wen-Chiang Tu , Lakshmanan Karuppiah , Yufei Chen
发明人： You Wang , Wen-Chiang Tu , Lakshmanan Karuppiah , Yufei Chen
IPC分类号： H01L21/306
CPC分类号： H01L21/30625 , C09G1/02 , H01L21/31058
摘要： A slurry for planarization of a photoresist includes abrasive particles, an oxidizer, a surface activation chemical, and a solvent.
摘要翻译：用于平版化光致抗蚀剂的浆料包括磨料颗粒，氧化剂，表面活化化学品和溶剂。

9. 发明申请

US20070099552A1 CONDUCTIVE PAD WITH ION EXCHANGE MEMBRANE FOR ELECTROCHEMICAL MECHANICAL POLISHING 失效
标题翻译：带有离子交换膜的电化学机械电化学机械抛光
公开(公告)号：US20070099552A1
公开(公告)日：2007-05-03
申请号：US11555145
申请日：2006-10-31
申请人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
发明人： Liang-Yuh Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel Carl , Ralph Wadensweiler , Manoocher Birang , Paul Butterfield , Rashid Mavliev , Stan Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
IPC分类号： B23F21/03
CPC分类号： B24B37/046 , B24B27/0023 , B24B37/24 , B24B37/26 , B24D3/34 , B82Y30/00
摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.
摘要翻译：提供了一种用于处理基板表面的制造和设备。在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。电极设置在其间具有介电材料的抛光表面下方。可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。

10. 发明授权

US07344432B2 Conductive pad with ion exchange membrane for electrochemical mechanical polishing 失效
标题翻译：带离子交换膜的导电垫用于电化学机械抛光
公开(公告)号：US07344432B2
公开(公告)日：2008-03-18
申请号：US11555145
申请日：2006-10-31
申请人： Liang-Yun Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel A. Carl , Ralph Wadensweiler , Manoocher Birang , Paul D. Butterfield , Rashid A. Mavliev , Stan D. Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
发明人： Liang-Yun Chen , Yuchun Wang , Yan Wang , Alain Duboust , Daniel A. Carl , Ralph Wadensweiler , Manoocher Birang , Paul D. Butterfield , Rashid A. Mavliev , Stan D. Tsai , You Wang , Jie Diao , Renhe Jia , Lakshmanan Karuppiah , Robert Ewald
IPC分类号： B23H5/06 , B23H3/00 , B24D11/02 , C25F3/30 , B24B49/00 , H05K3/07
CPC分类号： B24B37/046 , B24B27/0023 , B24B37/24 , B24B37/26 , B24D3/34 , B82Y30/00
摘要： An article of manufacture and apparatus are provided for processing a substrate surface. In one aspect, an article of manufacture is provided for polishing a substrate including polishing article comprising a body having at least a partially conductive polishing surface. An electrode is disposed below the polishing surface having a dielectric material therebetween. A plurality of apertures may be formed in the polishing surface and the dielectric material to at least partially expose the electrode to the polishing surface. A membrane may be disposed between the electrode and the polishing surface that is permeable to ions and current to promote continuity between the electrode and the polishing surface.
摘要翻译：提供了一种用于处理基板表面的制造和设备。在一个方面，提供了一种用于抛光衬底的制品，所述衬底包括具有至少部分导电的抛光表面的主体的抛光制品。电极设置在其间具有介电材料的抛光表面下方。可以在抛光表面和电介质材料中形成多个孔，以至少部分地将电极暴露于抛光表面。可以在电极和抛光表面之间设置膜，其可透过离子和电流，以促进电极和抛光表面之间的连续性。

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