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1. 发明申请

US20050274622A1 Plating chemistry and method of single-step electroplating of copper on a barrier metal 审中-公开
标题翻译：电镀化学和铜在屏障金属上的单步电镀方法
公开(公告)号：US20050274622A1
公开(公告)日：2005-12-15
申请号：US11012965
申请日：2004-12-15
申请人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , You Wang
发明人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , You Wang
IPC分类号： C25D3/00 , C25D3/38 , C25D5/18 , C25D5/34 , C25D7/12 , H01L21/288 , H01L21/768
CPC分类号： H01L21/76873 , C25D3/38 , C25D5/18 , C25D5/34 , C25D7/123 , H01L21/2885 , H01L21/76843 , H01L21/76864
摘要： Embodiments of a method of copper plating a substrate surface with a group VIII metal layer have been described. In one embodiment, a method of plating copper on a substrate surface with a group VIII metal layer comprises pre-treating the substrate surface by removing a group VIII metal surface oxide layer and/or surface contaminants and plating the substrate in a copper plating solution comprising about 50 g/l to about 300 g/l of sulfuric acid at an initial plating current higher than the critical current density to deposit a continuous copper layer on the substrate surface. The Pre-treating the substrate can be accomplished by annealing the substrate in an environment with a hydrogen-containing gas environment and/or a non-reactive gas(es) to Ru, by a cathodic treatment in an acid-containing bath, or by immersing the substrate in an acid-containing bath.
摘要翻译：已经描述了用VIII族金属层对基板表面进行镀铜的方法的实施例。在一个实施例中，在基板表面上用第VIII族金属层电镀铜的方法包括通过去除第VIII族金属表面氧化物层和/或表面污染物并将该基板镀在包括约50g / l至约300g / l的硫酸，其初始电镀电流高于临界电流密度，以在衬底表面上沉积连续的铜层。通过在含酸浴中进行阴极处理，或通过在含酸浴中进行阴极处理，可以通过在具有含氢气体环境和/或非反应性气体的Ru的环境中对基底进行退火来实现基底的预处理将基板浸入含酸浴中。

2. 发明申请

US20070125657A1 Method of direct plating of copper on a substrate structure 审中-公开
标题翻译：在基板结构上直接电镀铜的方法
公开(公告)号：US20070125657A1
公开(公告)日：2007-06-07
申请号：US11255368
申请日：2005-10-21
申请人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , John Dukovic , Aron Rosenfeld , Lei Zhu
发明人： Zhi-Wen Sun , Renren He , Nicolay Kovarsky , John Dukovic , Aron Rosenfeld , Lei Zhu
IPC分类号： C25D5/34 , C25D3/38
CPC分类号： C25D3/38 , C25D5/10 , C25D5/34 , C25D5/54 , H01L21/2885 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH≧7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.
摘要翻译：本发明教导了一种将铜籽晶层沉积到基底表面上的方法，通常在阻挡层上。阻挡层可以包括难熔金属和/或第8,9或10族金属。该方法包括在含酸溶液中阴极预处理底物。然后将衬底放入包括络合的铜离子的铜溶液（pH> = 7.0）中，并且在衬底表面上施加电流或偏压。络合的铜离子被还原以将铜籽晶层沉积在阻挡层上。在一个方面，然后使用复杂的碱性浴来电化学地在衬底表面上印刷间隙填充层，然后在相同的浴中过量填充。另一方面，酸性浴ECP间隙填充过程和过度填充过程遵循碱性种子层过程。

3. 发明授权

US06773569B2 Potential pulse-scan methods of analyzing organic additives in plating baths with multi-component additives 失效
标题翻译：用多组分添加剂分析电镀浴中有机添加剂的潜在脉冲扫描方法
公开(公告)号：US06773569B2
公开(公告)日：2004-08-10
申请号：US10142719
申请日：2002-05-08
申请人： Zhi-Wen Sun , Nicolay Kovarsky , Chunman Yu , Girish Dixit
发明人： Zhi-Wen Sun , Nicolay Kovarsky , Chunman Yu , Girish Dixit
IPC分类号： C25D2112
CPC分类号： C25D21/12
摘要： A cyclic voltammetric method for measuring the concentration of additives in a plating solution. The method generally includes providing the plating solution, having an unknown concentration of an additive to be measured therein and cycling the potential of an inert working electrode through a series of measurement steps. The series of measurement steps includes a metal stripping step including pulsing from an open circuit potential to a metal stripping potential between about 0.2 V and about 0.8 V, and holding the metal stripping potential until a corresponding current nears 0 mA/cm. The series of measurement steps further includes a cleaning step including pulsing from the metal stripping potential to a cleaning potential between about 1.2 V and about 1.6 V, and holding the cleaning potential for about 2 seconds to about 10 seconds. The series of measurement steps then includes a pre-plating step including pulsing from the cleaning potential to a pre-plating potential between about −0.2 V and about −0.5 V, and holding the pre-plating potential for about 2 seconds to about 10 seconds. The series of measurement steps additionally includes an equilibration step including pulsing from the pre-plating potential to the open circuit potential, and holding the open circuit potential for a predetermined time period, and a metal deposition step including scanning from the open circuit potential of the equilibration step to an additive sensitive potential, holding the additive sensitive potential for about 1 second to about 30 seconds, and scanning back to the open circuit potential. The method further includes plotting a profile of a deposition current resulting from the metal deposition potential as a function of time and integrating the deposition current to determine the concentration of the additive to be measured.
摘要翻译：一种用于测量电镀溶液中添加剂浓度的循环伏安法。该方法通常包括提供具有未测量的待测量添加剂浓度的电镀溶液，并通过一系列测量步骤循环惰性工作电极的电位。一系列测量步骤包括金属剥离步骤，其包括从约0.2V至约0.8V之间的开路电位脉冲至金属剥离电势，并保持金属剥离电位，直到相应的电流接近0mA / cm。一系列测量步骤还包括清洁步骤，其包括从金属剥离电位脉冲至约1.2V至约1.6V之间的清洁电势，并将清洁电位保持约2秒至约10秒。所述一系列测量步骤包括预镀步骤，包括从清洁电势脉冲至约-0.2V至约-0.5V之间的预镀电势，并将预镀电位保持约2秒至约10秒。一系列测量步骤还包括平衡步骤，包括从预镀电位脉冲到开路电位，并将开路电位保持预定时间段，以及金属沉积步骤，包括从开路电位扫描平衡步骤到加性敏感电位，保持添加剂敏感电位约1秒至约30秒，并扫描回开路电位。该方法还包括绘制由金属沉积电势产生的沉积电流的轮廓作为时间的函数，并且积分沉积电流以确定待测量的添加剂的浓度。

4. 发明申请

US20050145499A1 Plating of a thin metal seed layer 审中-公开
标题翻译：电镀薄金属种子层
公开(公告)号：US20050145499A1
公开(公告)日：2005-07-07
申请号：US11072473
申请日：2005-03-03
申请人： Nicolay Kovarsky , You Wang , John Dukovic , Ivan Rodriguez
发明人： Nicolay Kovarsky , You Wang , John Dukovic , Ivan Rodriguez
IPC分类号： C25D5/18
CPC分类号： C25D17/10 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/007 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A method and apparatus for plating a metal layer onto a substrate is provided. The plating apparatus includes two or more segments of an anode and an auxiliary electrode. The plating method includes a first stage of plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate before metal gap filling and bulk metal plating are performed. The thin metal seed is plated on the substrate surface by applying a current pulse provided by a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features is performed by applying a second current pulse where current is provided to all segments of the anode.
摘要翻译：提供了一种用于将金属层电镀到基底上的方法和装置。电镀装置包括阳极和辅助电极的两个或更多个区段。电镀方法包括在执行金属间隙填充和块状金属电镀之前，在基板的中心和基板的边缘附近均匀地电镀薄金属种子的第一阶段。通过施加由与阳极和辅助电极的一个部分相反极性电连通的第一电源和第二电源提供的电流脉冲，将薄金属种子电镀在基板表面上。此后，通过施加第二电流脉冲来执行特征的间隙填充，其中电流被提供给阳极的所有段。

5. 发明申请

US20050218000A1 Conditioning of contact leads for metal plating systems 审中-公开
标题翻译：金属电镀系统接触导线的调节
公开(公告)号：US20050218000A1
公开(公告)日：2005-10-06
申请号：US11100344
申请日：2005-04-06
申请人： Hooman Hafezi , Joseph Yahalom , Roman Mostovoy , Bo Zheng , Aron Rosenfeld , You Wang , Nicolay Kovarsky
发明人： Hooman Hafezi , Joseph Yahalom , Roman Mostovoy , Bo Zheng , Aron Rosenfeld , You Wang , Nicolay Kovarsky
IPC分类号： C25D5/54 , C25D21/12
CPC分类号： C25D21/12 , C25D5/54
摘要： Embodiments of the invention provide a method for conditioning contacts of an electrochemical metal plating system. The method includes deplating the contacts by supplying a reversed biased energy and monitoring electrical measurements of the plating system in real-time such that the endpoint of a deplating process can be determined. In different embodiments, the method includes the use of a constant current or voltage, variable current or voltage, or combinations thereof for conditioning the contacts.
摘要翻译：本发明的实施例提供一种用于调节电化学金属电镀系统的触点的方法。该方法包括通过提供反向偏置的能量并实时监测电镀系统的电测量来使触点脱锌，从而可以确定脱镀工艺的端点。在不同的实施例中，该方法包括使用恒定电流或电压，可变电流或电压或其组合来调节触点。

6. 发明申请

US20050284751A1 Electrochemical plating cell with a counter electrode in an isolated anolyte compartment 审中-公开
标题翻译：在隔离的阳极电解液室中具有对电极的电化学电镀槽
公开(公告)号：US20050284751A1
公开(公告)日：2005-12-29
申请号：US10880103
申请日：2004-06-28
申请人： Nicolay Kovarsky , Anzhong Chang , Saravjeet Singh , You Wang , John Dukovic
发明人： Nicolay Kovarsky , Anzhong Chang , Saravjeet Singh , You Wang , John Dukovic
IPC分类号： C25B9/08 , C25D7/12 , C25D17/00 , H01L21/288 , H01L21/768
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/22 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A fluid processing cell for depositing a conductive layer onto a substrate is provided. The cell includes a catholyte solution fluid volume positioned to receive a substrate for plating, a first anolyte solution fluid volume at least partially ionically separated from the catholyte solution fluid volume, an anode assembly positioned in the first anolyte solution fluid volume, a second anolyte solution fluid volume, the second anolyte solution fluid volume being electrically isolated from the first anode solution fluid volume and at least partially in ionic communication with the cathode solution fluid volume, and a cathode counter electrode positioned in the second anolyte solution volume.
摘要翻译：提供了一种用于将导电层沉积到基底上的流体处理池。电池包括定位成接收用于电镀的衬底的阴极电解液溶液体积，至少部分与阴极电解液溶液体积离子地分离的第一阳极电解液溶液体积，位于第一阳极电解液溶液体积中的阳极组件，第二阳极电解液流体体积，第二阳极电解液溶液体积与第一阳极溶液流体体积电隔离并且至少部分地与阴极溶液流体体积离子连通，以及位于第二阳极电解液体积中的阴极对电极。

7. 发明申请

US20110129616A1 OXYGEN-DOPING FOR NON-CARBON RADICAL-COMPONENT CVD FILMS 有权
标题翻译：用于非碳离子组分CVD膜的氧气掺杂
公开(公告)号：US20110129616A1
公开(公告)日：2011-06-02
申请号：US12836991
申请日：2010-07-15
申请人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
发明人： Nitin Ingle , Abhijit Basu Mallick , Earl Osman Solis , Nicolay Kovarsky , Olga Lyubimova
IPC分类号： H05H1/24
CPC分类号： C23C16/308 , C23C16/402 , C23C16/452 , C23C16/45565 , C23C16/56 , H01J37/32082 , H01J37/32357 , H01J37/32449
摘要： Methods of forming silicon oxide layers are described. The methods include the steps of concurrently combining both a radical precursor and a radical-oxygen precursor with a carbon-free silicon-containing precursor. One of the radical precursor and the silicon-containing precursor contain nitrogen. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain very little nitrogen. The radical-oxygen precursor and the radical precursor may be produced in separate plasmas or the same plasma. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment.
摘要翻译：描述形成氧化硅层的方法。所述方法包括同时将自由基前体和自由基 - 氧前体与无碳的含硅前体同时组合的步骤。自由基前体和含硅前体之一含有氮。该方法导致在衬底上沉积含硅 - 氧和氮的层。然后增加硅 - 氧 - 和 - 含氮层的氧含量以形成可能含有非常少的氮的氧化硅层。自由基 - 氧前体和自由基前体可以在分离的等离子体或相同的等离子体中产生。氧含量的增加可以通过在含氧气氛的存在下退火层而实现，并且通过在惰性环境中更高的温度升高可以进一步提高膜的密度。

8. 发明申请

US20070175752A1 ANOLYTE FOR COPPER PLATING 失效
标题翻译：铜镀层
公开(公告)号：US20070175752A1
公开(公告)日：2007-08-02
申请号：US11539477
申请日：2006-10-06
申请人： Michael Yang , Nicolay Kovarsky
发明人： Michael Yang , Nicolay Kovarsky
IPC分类号： C25B13/04
CPC分类号： C25D17/002 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , C07F9/103 , C25D7/123 , C25D17/001 , C25D21/22 , H01L21/2885 , H01L21/76877
摘要： Embodiments of the invention provide a method for plating copper into features formed on a semiconductor substrate. The method includes positioning the substrate in a plating cell, wherein the plating cell includes a catholyte volume containing a catholyte solution, an anolyte volume containing an anolyte solution, an ionic membrane positioned to separate the anolyte volume from the catholyte volume, and an anode positioned in the anolyte volume. The method further includes applying a plating bias between the anode and the substrate, plating copper ions onto the substrate from the catholyte solution, and replenishing the copper ions plated onto the substrate from the catholyte solution with copper ions transported from the anolyte solution via the ionic membrane, wherein the catholyte solution has a copper concentration of greater than about 51 g/L.
摘要翻译：本发明的实施例提供了一种将铜电镀到形成在半导体衬底上的特征的方法。该方法包括将基板定位在电镀槽中，其中镀覆电池包括含有阴极电解液的阴极电解液体积，含有阳极电解液的阳极电解液体，将阳极电解液体积与阴极电解液容积分离的离子膜，在阳极电解液中。该方法还包括在阳极和衬底之间施加电镀偏压，从阴极电解液将铜离子镀覆到衬底上，并从阴极电解液中补充镀在衬底上的铜离子，铜离子从阳极电解液通过离子膜，其中阴极电解液的铜浓度大于约51g / L。

9. 发明授权

US07247222B2 Electrochemical processing cell 失效
标题翻译：电化学处理池
公开(公告)号：US07247222B2
公开(公告)日：2007-07-24
申请号：US10268284
申请日：2002-10-09
申请人： Michael X. Yang , Dmitry Lubomirsky , Yezdi Dordi , Saravjeet Singh , Sheshraj Tulshibagwale , Nicolay Kovarsky
发明人： Michael X. Yang , Dmitry Lubomirsky , Yezdi Dordi , Saravjeet Singh , Sheshraj Tulshibagwale , Nicolay Kovarsky
IPC分类号： C25B9/00 , C25C7/04 , C25B9/08
CPC分类号： H01L21/2885 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , C07F9/103 , C25D7/123 , C25D17/001
摘要： Embodiments of the invention may generally provide a small volume electrochemical plating cell. The plating cell generally includes a fluid basin configured to contain a plating solution therein, the fluid basin having a substantially horizontal weir. The cell further includes an anode positioned in a lower portion of the fluid basin, the anode having a plurality of parallel channels formed therethrough, and a base member configured to receive the anode, the base member having a plurality of groves formed into an anode receiving surface, each of the plurality of grooves terminating into an annular drain channel. A membrane support assembly configured to position a membrane immediately above the anode in a substantially planar orientation with respect to the anode surface is provided, the membrane support assembly having a plurality of channels and bores formed therein.
摘要翻译：本发明的实施方案通常可以提供小体积的电化学电镀单元。电镀槽通常包括配置成在其中容纳电镀液的流体池，流体池具有基本上水平的堰。电池还包括位于流体槽的下部的阳极，阳极具有穿过其形成的多个平行通道，以及构造成容纳阳极的基座构件，底座构件具有形成为阳极接收的多个槽多个槽中的每一个终止于环形排水通道。提供了一种膜支撑组件，其被配置为将膜垂直于阳极定位在相对于阳极表面的基本上平面的方向上，所述膜支撑组件具有形成在其中的多个通道和孔。

10. 发明申请

US20060266653A1 In-situ profile measurement in an electroplating process 失效
标题翻译：电镀工艺中的原位型材测量
公开(公告)号：US20060266653A1
公开(公告)日：2006-11-30
申请号：US11137711
申请日：2005-05-25
申请人： Manoocher Birang , Nicolay Kovarsky , Bernardo Donoso
发明人： Manoocher Birang , Nicolay Kovarsky , Bernardo Donoso
IPC分类号： C25D21/12
CPC分类号： G01B7/06 , C25D7/123 , C25D17/001 , C25D21/12 , G01B7/287 , H01L21/67253 , Y10T428/24802
摘要： A method and apparatus for measuring differential voltages in an electrolyte of an electrochemical plating cell. Current densities are calculated from the measured differential voltages and correlated to thickness values of plated materials. A real time thickness profile may be generated from the thickness values.
摘要翻译：一种用于测量电化学电镀单元的电解质中的差分电压的方法和装置。电流密度根据测得的差分电压计算，并与电镀材料的厚度值相关。可以从厚度值产生实时厚度分布。

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