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1. 发明授权

US08586481B2 Chemical planarization of copper wafer polishing 有权
标题翻译：铜晶片抛光的化学平面化
公开(公告)号：US08586481B2
公开(公告)日：2013-11-19
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. McClintock , Barry L. Chin
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarizing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化基板。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

2. 发明申请

US20110294293A1 CHEMICAL PLANARIZATION OF COPPER WAFER POLISHING 有权
标题翻译：铜波抛光的化学平面化
公开(公告)号：US20110294293A1
公开(公告)日：2011-12-01
申请号：US13105658
申请日：2011-05-11
申请人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
发明人： You Wang , Wen-Chiang Tu , Feng Q. Liu , Yuchun Wang , Lakshmanan Karuppiah , William H. Mc Clintock , Barry L. Chin
IPC分类号： H01L21/306
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/04 , H01L21/7684
摘要： Embodiments described herein relate to removing material from a substrate. More particularly, the embodiments described herein relate to polishing or planarzing a substrate by a chemical mechanical polishing process. In one embodiment, a method of chemical mechanical polishing (CMP) of a substrate is provided. The method comprises exposing a substrate having a conductive material layer formed thereon to a polishing solution comprising phosphoric acid, one or more chelating agents, one or more corrosion inhibitors, and one or more oxidizers, forming a passivation layer on the conductive material layer, providing relative motion between the substrate and a polishing pad and removing at least a portion of the passivation layer to expose a portion of the underlying conductive material layer, and removing a portion of the exposed conductive material layer.
摘要翻译：本文所述的实施例涉及从衬底去除材料。更具体地，本文所述的实施例涉及通过化学机械抛光工艺抛光或平面化衬底。在一个实施例中，提供了基板的化学机械抛光（CMP）的方法。该方法包括将其上形成有导电材料层的基底暴露于包含磷酸，一种或多种螯合剂，一种或多种腐蚀抑制剂和一种或多种氧化剂的抛光溶液，在导电材料层上形成钝化层，提供衬底和抛光垫之间的相对运动，并去除钝化层的至少一部分以暴露下面的导电材料层的一部分，以及去除暴露的导电材料层的一部分。

3. 发明授权

US08318266B2 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 有权
公开(公告)号：US08318266B2
公开(公告)日：2012-11-27
申请号：US11470922
申请日：2006-09-07
申请人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
发明人： Ling Chen , Hua Chung , Barry L. Chin , Hong Zhang
IPC分类号： C23C16/00 , C23C14/02 , H05H1/00
CPC分类号： H01L21/28562 , C23C16/34 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/76843 , H01L21/76846 , H01L21/76871
摘要： A method for depositing a refractory metal nitride barrier layer having a thickness of about 20 angstroms or less is provided. In one aspect, the refractory metal nitride layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. The refractory metal nitride barrier layer provides adequate barrier properties and allows the grain growth of the first metal layer to continue across the barrier layer into the second metal layer thereby enhancing the electrical performance of the interconnect.

4. 发明授权

US08027746B2 Atomic layer deposition apparatus 有权
标题翻译：原子层沉积装置
公开(公告)号：US08027746B2
公开(公告)日：2011-09-27
申请号：US12953220
申请日：2010-11-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

5. 发明申请

US20090269922A1 Method of depositing a metal seed layer over recessed feature surfaces in a semiconductor substrate 有权
标题翻译：在半导体衬底中的凹陷特征表面上沉积金属种子层的方法
公开(公告)号：US20090269922A1
公开(公告)日：2009-10-29
申请号：US12459091
申请日：2009-06-25
申请人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
发明人： Tony Chiang , Gongda Yao , Peijun Ding , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara , Zheng Xu , Hong Zhang
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/165 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76871 , H01L21/76877 , H01L21/76879 , H01L21/76883
摘要： We disclose a method of depositing a metal seed layer on a wafer substrate comprising a plurality of recessed device features. The method comprises depositing a first portion of the metal seed layer on the wafer via plasma deposition at a sufficient ratio of wafer substrate bias to DC source power that bottom coverage is achieved while resputtering of surfaces of the recessed device features is inhibited. The method also comprises depositing a second portion of the metal seed layer at a ration of substrate RF bias to DC source power such that resputtering is not inhibited.
摘要翻译：我们公开了在包括多个凹入的装置特征的晶片衬底上沉积金属种子层的方法。该方法包括通过等离子体沉积将金属种子层的第一部分以足够的晶片衬底偏压比与DC源功率沉积在晶片上，达到底部覆盖范围，同时抑制凹陷器件特征的表面的再溅射。该方法还包括以基板RF偏压的比例将金属种子层的第二部分沉积到DC源功率，使得不会抑制再溅射。

6. 发明授权

US07085616B2 Atomic layer deposition apparatus 失效
公开(公告)号：US07085616B2
公开(公告)日：2006-08-01
申请号：US09917842
申请日：2001-07-27
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： G06F19/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.

7. 发明授权

US06753248B1 Post metal barrier/adhesion film 有权
标题翻译：后金属屏障/粘合膜
公开(公告)号：US06753248B1
公开(公告)日：2004-06-22
申请号：US10352505
申请日：2003-01-27
申请人： Michael Wood , Barry L. Chin , Paul F. Smith , Robin Cheung
发明人： Michael Wood , Barry L. Chin , Paul F. Smith , Robin Cheung
IPC分类号： H01L214763
CPC分类号： H01L21/76852 , H01L21/76864 , H01L21/76873 , H01L21/76885
摘要： A method for processing a substrate. The method generally includes forming a copper interconnect in a sacrificial layer deposited on the substrate by patterning the sacrifical layer to form an interconnect and filling the interconnect with copper. The method additionally includes removing at least a portion of the sacrificial layer upon copper interconnect formation, depositing a barrier layer on the copper interconnect, and depositing a dielectric layer on the barrier layer.
摘要翻译：一种处理衬底的方法。该方法通常包括通过图案化牺牲层以形成互连并用铜填充互连件在沉积在衬底上的牺牲层中形成铜互连。该方法还包括在铜互连形成时去除牺牲层的至少一部分，在铜互连上沉积阻挡层，以及在阻挡层上沉积电介质层。

8. 发明授权

US4759836A Ion implantation of thin film CrSi.sub.2 and SiC resistors 失效
标题翻译：离子注入薄膜CrSi2和SiC电阻
公开(公告)号：US4759836A
公开(公告)日：1988-07-26
申请号：US84541
申请日：1987-08-12
申请人： Lorimer K. Hill , Barry L. Chin , Richard A. Blanchard
发明人： Lorimer K. Hill , Barry L. Chin , Richard A. Blanchard
IPC分类号： C23C14/06 , C23C14/58 , H01C17/12 , H01C17/232 , H01L21/02 , B05D5/12 , B05D3/06 , H01C17/06
CPC分类号： C23C14/0635 , C23C14/0682 , C23C14/58 , C23C14/5833 , H01C17/12 , H01C17/232 , H01L28/20 , H01L28/24 , Y10T29/49099
摘要： A thin film resistor is formed using sputtering to deposit a thin film of resistive material on an insulating surface. The sputter target is composed of constituents which are normally present in relatively large quantities in thin film resistors, such as chromium silicide and silicon carbide. The sputtered thin film material is formed into resistor regions. An insulating layer is deposited over the thin film material. Ions (e.g., boron ions) are then implanted into the thin film through the insulating layer. These implanted constituents have a significant effect on the temperature coefficient and sheet resistance of the thin film resistor. Ion implantation of these constituents enables more control over the characteristics of the thin film resistor as compared to prior art techniques not using ion implantation.
摘要翻译：使用溅射形成薄膜电阻器，以在绝缘表面上沉积电阻材料薄膜。溅射靶由诸如硅化铬和碳化硅之类的薄膜电阻器中通常以相对大量存在的成分组成。溅射的薄膜材料形成电阻器区域。绝缘层沉积在薄膜材料上。然后通过绝缘层将离子（例如，硼离子）注入到薄膜中。这些植入成分对薄膜电阻器的温度系数和薄层电阻具有显着影响。与不使用离子注入的现有技术相比，这些成分的离子注入能够更好地控制薄膜电阻器的特性。

9. 发明授权

US07892602B2 Cyclical deposition of refractory metal silicon nitride 有权
$Cyclical deposition of refractory metal silicon nitride$
标题翻译：难熔金属氮化硅的循环沉积
公开(公告)号：US07892602B2
公开(公告)日：2011-02-22
申请号：US11422826
申请日：2006-06-07
申请人： Hua Chung , Ling Chen , Barry L. Chin
发明人： Hua Chung , Ling Chen , Barry L. Chin
IPC分类号： C23C16/34
CPC分类号： C23C16/45531 , C23C16/34 , H01L21/28562 , H01L21/76843
摘要： Methods for depositing a metal silicon nitride layer on a substrate during an atomic layer deposition (ALD) process. The methods provide positioning a substrate within a process chamber containing a centralized expanding channel that conically tapers towards and substantially covers the substrate, flowing a process gas into the centralized expanding channel to form a circular flow pattern, exposing the substrate to the process gas having the circular flow pattern, and exposing the substrate sequentially to chemical precursors during an ALD process to form a metal silicon nitride material. In one example, the ALD process provides sequentially pulsing a metal precursor, a nitrogen precursor, and a silicon precursor into the process gas having the circular flow pattern. The metal silicon nitride material may contain tantalum or titanium. In other examples, the process gas or the substrate may be exposed to a plasma.
摘要翻译：在原子层沉积（ALD）工艺中在衬底上沉积金属氮化硅层的方法。该方法提供了将处理室中的衬底定位在处理室内，该处理室包含集中的扩展通道，该通道朝向并基本上覆盖衬底呈锥形锥形，将工艺气体流入集中扩展通道以形成圆形流动图案，将衬底暴露于具有圆形流动图案，并且在ALD工艺期间将衬底依次暴露于化学前体以形成金属氮化硅材料。在一个实例中，ALD工艺顺序地将金属前体，氮前体和硅前体顺序地引入到具有圆形流动图案的工艺气体中。金属氮化硅材料可以包含钽或钛。在其它实例中，工艺气体或衬底可以暴露于等离子体。

10. 发明申请

US20100099270A1 ATOMIC LAYER DEPOSITION APPARATUS 有权
标题翻译：原子层沉积装置
公开(公告)号：US20100099270A1
公开(公告)日：2010-04-22
申请号：US12646706
申请日：2009-12-23
申请人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
发明人： Barry L. Chin , Alfred W. Mak , Lawrence Chung-Lai Lei , Ming Xi , Hua Chung , Ken Kaung Lai , Jeong Soo Byun
IPC分类号： H01L21/302 , G06F17/00 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要： A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译：描述了用于原子层沉积（ALD）的方法和装置。该装置包括沉积室和晶片支架。沉积室被分成两个或更多个彼此一体地连接的沉积区域。晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。

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