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1. 发明授权

US08575042B2 Method of manufacturing semiconductor device and method of processing substrate and substrate processing apparatus 有权
标题翻译：制造半导体器件的方法和处理衬底和衬底处理设备的方法
公开(公告)号：US08575042B2
公开(公告)日：2013-11-05
申请号：US13405750
申请日：2012-02-27
申请人： Yosuke Ota , Yoshiro Hirose , Atsushi Sano , Osamu Kasahara , Kazuyuki Okuda , Kiyohiko Maeda
发明人： Yosuke Ota , Yoshiro Hirose , Atsushi Sano , Osamu Kasahara , Kazuyuki Okuda , Kiyohiko Maeda
IPC分类号： H01L21/31
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45534 , C23C16/45542 , C23C16/45546 , H01L21/02219 , H01L21/02266 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/31111
摘要： In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH3Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.
摘要翻译：在低温下，形成膜内氯（Cl）含量低，耐氟化氢（HF）的高氮化硅膜。氮化硅膜的形成包括（a）将一氯硅烷（SiH 3 Cl或MCS）气体供给到设置在处理室中的基板，（b）向设置在处理室中的基板供给等离子体激发的含氢气体，（c）向设置在处理室中的衬底供应等离子体激发或热激发的含氮气体，（d）将等离子体激发的氮气和等离子体激发的稀有气体中的至少一种供给到所配置的衬底在处理室中，和（e）在基板上形成氮化硅膜，进行包括步骤（a）至（d）的预定次数的循环。

2. 发明申请

US20120220137A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：制造半导体器件的方法和处理衬底和衬底加工设备的方法
公开(公告)号：US20120220137A1
公开(公告)日：2012-08-30
申请号：US13405750
申请日：2012-02-27
申请人： Yosuke Ota , Yoshiro Hirose , Atsushi Sano , Osamu Kasahara , Kazuyuki Okuda , Kiyohiko Maeda
发明人： Yosuke Ota , Yoshiro Hirose , Atsushi Sano , Osamu Kasahara , Kazuyuki Okuda , Kiyohiko Maeda
IPC分类号： H01L21/31 , C23C16/455 , C23C16/50
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/45534 , C23C16/45542 , C23C16/45546 , H01L21/02219 , H01L21/02266 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/31111
摘要： In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH3Cl or MCS) gas to a substrate disposed in a processing chamber, (b) supplying a plasma-excited hydrogen-containing gas to the substrate disposed in the processing chamber, (c) supplying a plasma-excited or heat-excited nitrogen-containing gas to the substrate disposed in the processing chamber, (d) supplying at least one of a plasma-excited nitrogen gas and a plasma-excited rare gas to the substrate disposed in the processing chamber, and (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a silicon nitride film on the substrate.
摘要翻译：在低温下，形成膜内氯（Cl）含量低，耐氟化氢（HF）的高氮化硅膜。氮化硅膜的形成包括（a）将一氯硅烷（SiH 3 Cl或MCS）气体供给到设置在处理室中的基板，（b）向设置在处理室中的基板供给等离子体激发的含氢气体，（c）向设置在处理室中的衬底供应等离子体激发或热激发的含氮气体，（d）将等离子体激发的氮气和等离子体激发的稀有气体中的至少一种供给到所配置的衬底在处理室中，和（e）在基板上形成氮化硅膜，进行包括步骤（a）至（d）的预定次数的循环。

3. 发明申请

US20120073751A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法和半导体器件
公开(公告)号：US20120073751A1
公开(公告)日：2012-03-29
申请号：US13311634
申请日：2011-12-06
申请人： Norikazu MIZUNO , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
发明人： Norikazu MIZUNO , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
IPC分类号： H01L21/306 , C23C16/52
CPC分类号： C23C16/402 , C23C16/042 , H01L21/02164 , H01L21/0228 , H01L21/0332 , H01L21/3141 , H01L21/31608
摘要： Provided is a substrate processing apparatus comprising: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller controls the heating unit such that heating temperature of the substrate becomes a processing temperature lower than a deformation temperature of a first photoresist constituting a first photoresist pattern, and the controller controls the material supply unit to repeat an alternate supply of the Si material and the catalyst, and the oxidation material and the catalyst into the processing chamber a plurality of times.
摘要翻译：提供了一种基板处理装置，包括：处理基板的处理室; 用于将Si材料，氧化材料和催化剂供应到处理室中的材料供应单元; 用于加热衬底的加热单元; 以及用于至少控制所述材料供应单元和所述加热单元的控制器，其中所述控制器控制所述加热单元，使得所述基板的加热温度变为低于构成第一光致抗蚀剂图案的第一光致抗蚀剂图案的变形温度的处理温度，以及控制器控制材料供应单元重复将Si材料和催化剂以及氧化材料和催化剂交替供应到处理室中多次。

4. 发明授权

US08093159B2 Manufacturing method of semiconductor device, and semiconductor device 有权
标题翻译：半导体器件的制造方法以及半导体器件
公开(公告)号：US08093159B2
公开(公告)日：2012-01-10
申请号：US12201606
申请日：2008-08-29
申请人： Norikazu Mizuno , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
发明人： Norikazu Mizuno , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
IPC分类号： H01L21/31 , H01L21/469 , H01L29/06 , H01L21/00 , G03F7/00
CPC分类号： C23C16/402 , C23C16/042 , H01L21/02164 , H01L21/0228 , H01L21/0332 , H01L21/3141 , H01L21/31608
摘要： Provided is a manufacturing method of a semiconductor device, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The manufacturing method of the semiconductor device comprises forming a first photoresist pattern in a predetermined region on a substrate, depositing a thin film on the surface of the first photoresist pattern, and forming a second photoresist pattern in a region where the first photoresist pattern is not formed.
摘要翻译：提供一种能够实现细间距图案并因此提高图案精度稳定性的半导体器件的制造方法。半导体器件的制造方法包括在衬底上的预定区域中形成第一光致抗蚀剂图案，在第一光致抗蚀剂图案的表面上沉积薄膜，以及在第一光致抗蚀剂图案不在的区域中形成第二光致抗蚀剂图案形成。

5. 发明授权

US08535479B2 Manufacturing method of semiconductor device, and semiconductor device 有权
标题翻译：半导体器件的制造方法以及半导体器件
公开(公告)号：US08535479B2
公开(公告)日：2013-09-17
申请号：US13311634
申请日：2011-12-06
申请人： Norikazu Mizuno , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
发明人： Norikazu Mizuno , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
IPC分类号： H01L21/306
CPC分类号： C23C16/402 , C23C16/042 , H01L21/02164 , H01L21/0228 , H01L21/0332 , H01L21/3141 , H01L21/31608
摘要： Provided is a substrate processing apparatus including: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at a processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.
摘要翻译：提供了一种基板处理装置，包括：处理基板的处理室; 用于将Si材料，氧化材料和催化剂供应到处理室中的材料供应单元; 用于加热衬底的加热单元; 以及用于至少控制所述材料供应单元和所述加热单元的控制器，其中所述控制器被配置为控制所述加热单元以在低于第一光致抗蚀剂的变形温度的处理温度下形成的第一光致抗蚀剂图案来加热所述基板构成第一光致抗蚀剂图案，并且控制材料供给单元交替地供给含硅材料和催化剂，并且以重复的方式将氧化材料和催化剂交替地供给到处理室中，以在基板上形成薄膜其厚度等于第一光致抗蚀剂图案的一半间距的5％。

6. 发明申请

US20090277382A1 SEMICONDUCTOR MANUFACTURING APPARATUS 审中-公开
标题翻译：半导体制造设备
公开(公告)号：US20090277382A1
公开(公告)日：2009-11-12
申请号：US12406728
申请日：2009-03-18
申请人： Norikazu Mizuno , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
发明人： Norikazu Mizuno , Kenji Kanayama , Kazuyuki Okuda , Yoshiro Hirose , Masayuki Asai
IPC分类号： C23C16/42
CPC分类号： C23C16/402 , C23C16/042 , H01L21/02164 , H01L21/0228 , H01L21/0332 , H01L21/3141 , H01L21/31608
摘要： Provided is a semiconductor manufacturing apparatus, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The semiconductor manufacturing apparatus comprises: a photoresist processing unit for forming a photoresist pattern in a predetermined region on a substrate to which a predetermined process is applied; and a substrate processing unit for forming a thin film on the surface of at least the photoresist pattern.
摘要翻译：提供了能够实现细间距图案并因此提高图案精度稳定性的半导体制造装置。半导体制造装置包括：光致抗蚀剂处理单元，用于在施加了预定处理的基板上的预定区域中形成光致抗蚀剂图案; 以及用于在至少光致抗蚀剂图案的表面上形成薄膜的基板处理单元。

7. 发明授权

US08176871B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US08176871B2
公开(公告)日：2012-05-15
申请号：US11990445
申请日：2007-03-28
申请人： Kazuyuki Okuda , Norikazu Mizuno
发明人： Kazuyuki Okuda , Norikazu Mizuno
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23C16/52 , C23C16/46 , C23C16/22 , C23C16/06
CPC分类号： H01L21/67109 , C23C16/45538 , C23C16/45546 , C23C16/45578 , H01L21/3141 , H01L21/3185 , Y10S427/106
摘要： Disclosed is a substrate processing apparatus, including: a processing space to provide a space in which a substrate is to be processed; a heating member to heat the processing space; a gas supply member to supply at least first and second processing gases to the processing space; an exhaust member to exhaust an atmosphere in the processing space; and a control member to control at least the gas supply member and the exhaust member such that supply and exhaust of the first and second processing gases are alternately repeated a plurality of times so that the first and second processing gases are not mixed with each other in the processing space when forming a desired film on the substrate, and both the first and second processing gases are supplied to the processing space when coating a surface of an inner wall of the processing space with a desired film.
摘要翻译：公开了一种基板处理装置，包括：处理空间，用于提供要处理基板的空间; 加热构件，用于加热处理空间; 气体供应构件，用于至少将第一和第二处理气体供应到处理空间; 排气构件，用于排出处理空间中的气氛; 以及控制构件，至少控制气体供给构件和排气构件，使得第一和第二处理气体的供给和排出交替重复多次，使得第一和第二处理气体彼此不混合当在所述膜上涂覆处理空间的内壁的表面时，在所述基板上形成期望的膜以及所述第一处理气体和所述第二处理气体两者的处理空间被供给到所述处理空间。

8. 发明申请

US20080250619A1 Vertical type semiconductor device producing apparatus 有权
标题翻译：垂直型半导体器件制造装置
公开(公告)号：US20080250619A1
公开(公告)日：2008-10-16
申请号：US12155625
申请日：2008-06-06
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： H01L21/67
CPC分类号： C23C16/45523 , C23C16/345 , Y10T29/41
摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.
摘要翻译：通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体并从反应室排出第二种气体，以处理设置在反应室中的基板。第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

9. 发明申请

US20070292974A1 Substrate Processing Method and Substrate Processing Apparatus 审中-公开
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20070292974A1
公开(公告)日：2007-12-20
申请号：US11664282
申请日：2006-01-27
申请人： Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
发明人： Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Kazuyuki Okuda
IPC分类号： B05C11/00 , H01L21/00
CPC分类号： C23C16/45546 , C23C16/345 , C23C16/50 , H01L21/0217 , H01L21/0228 , H01L21/3141
摘要： Disclosed is a substrate processing method in which a plurality of processing gases are alternately supplied to and exhausted from a processing chamber forming a space in which a substrate or substrates are to be processed to form a desired thin film on the substrate or each of the substrates comprising transferring the substrate or the substrates into the processing chamber, and controlling a supply time of one of the plurality of the processing gases to control an amount of a chemical species which exists in the thin film and the existing amount of which a film stress depends on, thereby controlling the film stress of the thin film.
摘要翻译：公开了一种基板处理方法，其中多个处理气体被交替地供给到处理室并从其中排出，所述处理室形成要在其上处理基板或基板的空间，以在基板或每个基板上形成期望的薄膜包括将衬底或衬底转移到处理室中，并且控制多个处理气体中的一个处理气体的供给时间以控制存在于薄膜中的化学物质的量以及薄膜应力所依赖的现有量从而控制薄膜的薄膜应力。

10. 发明授权

US5668726A Data backup apparatus utilized in an electronic control system and data backup method performed in the data backup apparatus 失效
标题翻译：在电子控制系统中使用的数据备份装置和在数据备份装置中执行的数据备份方法
公开(公告)号：US5668726A
公开(公告)日：1997-09-16
申请号：US357923
申请日：1994-12-16
申请人： Hiroshi Kondo , Takamasa Oguri , Masato Yano , Kazuyuki Okuda , Yoshihiro Kitagawa
发明人： Hiroshi Kondo , Takamasa Oguri , Masato Yano , Kazuyuki Okuda , Yoshihiro Kitagawa
IPC分类号： G05B19/042 , G11C11/4074 , G06F11/16
CPC分类号： G05B19/0428 , Y02P90/265
摘要： A backup RAM for storing pieces of diagnosis data regardless of the cut-off of an electric power is provided in a portion of a RAM. In cases where the detection of an unusual condition by a throttle sensor or a water temperature sensor is judged by a CPU in a current processing routine, a first checking value indicating that the backup RAM is in a renewing period is stored in a checking region of the backup RAM, and pieces of previous diagnosis data stored in a data access region of the backup RAM in a previous processing routine are copied to a temporary refuge region of the backup RAM. Thereafter, pieces of updated diagnosis data obtained in the current processing routine are stored one by one in the data access region in place of the previous diagnosis data, and a second checking value indicating that the backup RAM is in a renewal finishing period is stored in the checking region. In cases where the first checking data is stored in the checking region when the electric power cut off is again supplied, the previous diagnosis data stored in the temporary refuge region are returned to the data access region and are read out according to a request from a diagnosis checker.
摘要翻译：在RAM的一部分中设置有用于存储断电的诊断数据的备用RAM。在当前处理程序中CPU由CPU判断由油门传感器或水温传感器检测异常情况的情况下，表示备用RAM处于更新周期的第一检查值被存储在备份RAM和存储在先前处理例程中的备份RAM的数据访问区域中的先前诊断数据被复制到备用RAM的临时避难区域。此后，将当前处理程序中获得的更新的诊断数据片段逐个存储在数据访问区域中，而不是先前的诊断数据，并且存储指示备份RAM处于更新完成时段的第二检查值存储在检查区域。在再次提供电力切断时，在检查区域中存储第一检查数据的情况下，将存储在临时避难区域中的先前诊断数据返回到数据访问区域，并根据来自诊断检查。

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