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1. 发明授权

US08047158B2 Substrate processing apparatus and reaction container 有权
公开(公告)号：US08047158B2
公开(公告)日：2011-11-01
申请号：US11933169
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/509 , C23C16/505 , C23C16/503 , C23C16/50 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

2. 发明授权

US07900580B2 Substrate processing apparatus and reaction container 有权
标题翻译：基材加工设备和反应容器
公开(公告)号：US07900580B2
公开(公告)日：2011-03-08
申请号：US11933208
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

3. 发明申请

US20080250619A1 Vertical type semiconductor device producing apparatus 有权
标题翻译：垂直型半导体器件制造装置
公开(公告)号：US20080250619A1
公开(公告)日：2008-10-16
申请号：US12155625
申请日：2008-06-06
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： H01L21/67
CPC分类号： C23C16/45523 , C23C16/345 , Y10T29/41
摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.
摘要翻译：通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体并从反应室排出第二种气体，以处理设置在反应室中的基板。第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

4. 发明授权

US07622396B2 Method of producing a semiconductor device 有权
标题翻译：半导体装置的制造方法
公开(公告)号：US07622396B2
公开(公告)日：2009-11-24
申请号：US12155625
申请日：2008-06-06
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： H01L21/31
CPC分类号： C23C16/45523 , C23C16/345 , Y10T29/41
摘要： A semiconductor device is produced by providing a reaction chamber with a substrate and sequentially repeating steps of: supplying a first kind of gas into the reaction chamber, exhausting the first kind of gas from the reaction chamber, supplying a second kind of gas into the reaction chamber, and exhausting the second kind of gas from the reaction chamber to process the substrate disposed in the reaction chamber. The first kind of gas is pre-reserved in an intermediate portion of a supply path through which the first kind of gas flows, and is supplied into the reaction chamber with exhaust of the reaction chamber being substantially stopped.
摘要翻译：通过向反应室提供衬底并依次重复以下步骤来制造半导体器件：将第一种气体供应到反应室中，从反应室排出第一种气体，向反应器中供应第二种气体并从反应室排出第二种气体，以处理设置在反应室中的基板。第一种气体预先保留在供应路径的中间部分，第一种气体通过该中间部分流动，并被供应到反应室中，反应室的排气基本停止。

5. 发明申请

US20080251015A1 Substrate Processing Apparatus and Reaction Container 审中-公开
公开(公告)号：US20080251015A1
公开(公告)日：2008-10-16
申请号：US11933190
申请日：2007-10-31
申请人： Tadashi KONTANI , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi KONTANI , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/455 , C23C16/54
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

6. 发明申请

US20110176967A1 VERTICAL TYPE SEMICONDUCTOR DEVICE PRODUCING APPARATUS 审中-公开
标题翻译：垂直型半导体器件生产设备
公开(公告)号：US20110176967A1
公开(公告)日：2011-07-21
申请号：US13074835
申请日：2011-03-29
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： B01J19/00
CPC分类号： C23C16/45523 , C23C16/345
摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.
摘要翻译：垂直型半导体器件制造装置包括：垂直型反应室，其容纳多个堆叠的基板; 排出反应室的排气路径，通过排气路排出反应室的真空排气装置; 用于打开和关闭排气通道的排气阀; 向反应室供给有助于成膜的第一种气体的第一供给路径; 将有助于成膜的第二种气体供给到反应室的第二供给路径; 分别打开和关闭第一和第二供应路径的第一和第二供气阀; 以及控制器，其控制所述排气阀和所述第一和第二气体供给阀，使得当所述第一种气体被供应到所述反应室时，所述第一种气体在状态下从所述第一供给路径供应到所述反应室其中停止反应室的排气以将反应室中的多个基板暴露于第一种气体，并且当将第二种气体供应到反应室时，将第二种气体供应到在反应室被真空排气装置排出的状态下通过第二供给路径反应室，将反应室内的多个基板暴露于第二种气体。

7. 发明申请

US20100263593A1 SUBSTRATE PROCESSING APPARATUS AND REACTION CONTAINER 有权
标题翻译：基板加工装置和反应容器
公开(公告)号：US20100263593A1
公开(公告)日：2010-10-21
申请号：US12823001
申请日：2010-06-24
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

8. 发明申请

US20080251014A1 Substrate Processing Apparatus and Reaction Container 有权
标题翻译：基板加工装置及反应容器
公开(公告)号：US20080251014A1
公开(公告)日：2008-10-16
申请号：US11933169
申请日：2007-10-31
申请人： Tadashi KONTANI , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi KONTANI , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/448 , C23C16/452 , C23C16/54
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

9. 发明申请

US20050217577A1 Vertical type semiconductor device producing apparatus 审中-公开
公开(公告)号：US20050217577A1
公开(公告)日：2005-10-06
申请号：US11121919
申请日：2005-05-05
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/345
摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.

10. 发明授权

US06905549B2 Vertical type semiconductor device producing apparatus 有权
标题翻译：垂直型半导体器件制造装置
公开(公告)号：US06905549B2
公开(公告)日：2005-06-14
申请号：US10411092
申请日：2003-04-11
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/345 , Y10T29/41
摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.
摘要翻译：垂直型半导体器件制造装置包括：垂直型反应室，其容纳多个堆叠的基板; 排出反应室的排气路径，通过排气路排出反应室的真空排气装置; 用于打开和关闭排气通道的排气阀; 向反应室供给有助于成膜的第一种气体的第一供给路径; 将有助于成膜的第二种气体供给到反应室的第二供给路径; 分别打开和关闭第一和第二供应路径的第一和第二供气阀; 以及控制器，其控制所述排气阀和所述第一和第二气体供给阀，使得当所述第一种气体被供应到所述反应室时，所述第一种气体在状态下从所述第一供给路径供应到所述反应室其中停止反应室的排气以将反应室中的多个基板暴露于第一种气体，并且当将第二种气体供应到反应室时，将第二种气体供应到在反应室被真空排气装置排出的状态下通过第二供给路径反应室，将反应室内的多个基板暴露于第二种气体。

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