专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US12154826B2 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium 有权
公开(公告)号：US12154826B2
公开(公告)日：2024-11-26
申请号：US18306798
申请日：2023-04-25
申请人： KOKUSAI ELECTRIC CORPORATION
发明人： Masanori Nakayama , Katsunori Funaki , Tatsushi Ueda , Yasutoshi Tsubota , Yuichiro Takeshima , Hiroto Igawa , Yuki Yamakado
IPC分类号： H01L21/321 , H01L21/67 , H01L21/768
CPC分类号： H01L21/76886 , H01L21/321 , H01L21/67115 , H01L21/76862
摘要： There is provided a technique that includes: preparing the substrate including a silicon-containing film and a metal film composed of a metal element, which includes at least one selected from the group of tungsten, titanium, ruthenium, and molybdenum and, which are formed on a surface of the substrate; and simultaneously performing modifying the metal film and modifying the silicon-containing film by supplying reactive species, which are generated by plasma-exciting a processing gas containing hydrogen and oxygen, to the substrate.

2. 发明授权

US12154804B2 Predictive wafer scheduling for multi-chamber semiconductor equipment 有权
公开(公告)号：US12154804B2
公开(公告)日：2024-11-26
申请号：US18493943
申请日：2023-10-25
申请人： Applied Materials, Inc.
发明人： Adrian Rhee
IPC分类号： H01L21/67 , G05B19/4155 , G06N20/00
CPC分类号： H01L21/67276 , G05B19/4155 , G06N20/00 , G05B2219/32252
摘要： A method includes identifying a set of wafers, wherein each wafer is associated with a respective start time of a set of start times, determining whether the set of wafers includes an idle wafer, in response to determining that the set of wafers includes an idle wafer that is idle for a duration that exceeds a predefined threshold value, generating a modified set of start times by modifying at least the start time for the idle wafer, and initiating a computer simulation forecasting processing of the set of wafers using a wafer modification chamber and a wafer movement chamber based on the modified set of start times. The computer simulation uses a machine learning model trained based on a first duration to perform a first manufacturing task using the wafer modification chamber and a second duration to perform a second manufacturing task using the wafer movement chamber.

3. 发明授权

US12154793B2 Etching apparatus and etching method 有权
公开(公告)号：US12154793B2
公开(公告)日：2024-11-26
申请号：US16938552
申请日：2020-07-24
申请人： TOKYO ELECTRON LIMITED
发明人： Koichi Nagami , Kazuya Nagaseki
IPC分类号： H01L21/00 , H01J37/32 , H01L21/14 , H01L21/3065 , H01L21/3213 , H01L21/67
CPC分类号： H01L21/32136 , H01J37/32027 , H01J37/32165 , H01J37/32568 , H01L21/14 , H01L21/3065 , H01L21/67069 , H01J2237/24564 , H01J2237/334 , H01J2237/3341
摘要： An etching apparatus includes: a placement table serving as a lower electrode and configured to place a workpiece to be subjected to an etching processing thereon; a DC power supply configured to generate a negative DC voltage applied to the placement table; and a controller configured to: periodically apply a negative DC voltage to the placement table from the DC power supply when the etching processing on the workpiece placed on the placement table is initiated, and decrease a frequency of the negative DC voltage applied to the placement table with an elapse of processing time of the etching processing.

4. 发明公开

US20240387215A1 SEMICONDUCTOR APPARATUS AND METHOD OF COLLECTING RESIDUES 审中-公开
公开(公告)号：US20240387215A1
公开(公告)日：2024-11-21
申请号：US18784956
申请日：2024-07-26
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ping-Cheng Lin , Pin-Yi Hsin , Ching Shun Lee , Bo-Han Huang , cheng-tsung Tu
IPC分类号： H01L21/673 , H01L21/67 , H01L21/677
CPC分类号： H01L21/6732 , H01L21/67115 , H01L21/67757
摘要： A method for collecting residues of curable material includes: performing a curing process on a semiconductor wafer in a chamber, where the semiconductor wafer is held by a wafer cassette, and residues of curable material is formed in the chamber; and collecting the residues of curable material. A first portion of the residues dripping from a ceiling of the chamber is directed toward a tray using a flow-directing structure, where the flow-directing structure is below the ceiling of the chamber, the flow-directing structure includes a central opening and a slanted surface sloped to direct the first portion of the residues toward the central opening. The first portion of the residues is collected on a collecting surface of the tray which covers the central opening of the flow-directing structure.

5. 发明公开

US20240387209A1 SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER- READABLE RECORDING MEDIUM 审中-公开
公开(公告)号：US20240387209A1
公开(公告)日：2024-11-21
申请号：US18615733
申请日：2024-03-25
申请人： KOKUSAI ELECTRIC COPRORATION
发明人： Masaru KADOSHIMA , Kaoru Yamamoto , Toshiyuki Kikuchi , Naofumi Ohashi
IPC分类号： H01L21/67 , C23C16/455 , C23C16/52 , H01J37/32 , H01L21/66
CPC分类号： H01L21/67248 , C23C16/45544 , C23C16/52 , H01J37/32449 , H01L22/12 , H01J2237/332
摘要： There is provided a technique capable of suppressing a variation within a substrate processing. There is provided a technique that includes performing a cycle a plurality of times, the cycle including: (a) storing a first process gas in a storage; (b) supplying the first process gas from the storage at a first temperature to a substrate after (a) to change a temperature of the storage to a second temperature lower than the first temperature; and (c) changing the temperature of the storage after supplying the first process gas to a third temperature after (b), wherein (a), (b) and (c) are sequentially performed in the cycle, and wherein the third temperature is kept within a predetermined temperature range while the cycle is performed the plurality of times.

6. 发明公开

US20240387208A1 LOAD PORT AND METHODS OF OPERATION 审中-公开
公开(公告)号：US20240387208A1
公开(公告)日：2024-11-21
申请号：US18786101
申请日：2024-07-26
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Yi-Fam SHIU , Ting-Yau SHIU , Cheng-Lung WU , Yang-Ann CHU , Jiun-Rong PAI
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67201 , H01L21/67011 , H01L21/67242 , H01L21/67739 , H01L21/67748
摘要： A load port is capable of monitoring various environmental parameters associated with a transport carrier to minimize and/or prevent exposure of the semiconductor substrates therein to increased humidity, increased oxygen, increased vibration, and/or one or more other elevated environmental conditions that might otherwise contaminate the semiconductor substrates, damage the semiconductor substrates, and/or cause processing defects. For example, the load port may monitor the environmental parameters as indicators of a potential blockage of a diffuser of the transport carrier, and a relief valve may be used to divert a gas away from the transport carrier based on a determination that a diffuser blockage has occurred. In this way, the gas may be diverted through the relief valve and away from the transport carrier to prevent increased humidity, contaminants, and/or vibration from contaminating and/or damaging the semiconductor substrates.

7. 发明公开

US20240387207A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20240387207A1
公开(公告)日：2024-11-21
申请号：US18630230
申请日：2024-04-09
申请人： SEMES CO., LTD.
发明人： Ki Won HAN , Hee Chan KIM
IPC分类号： H01L21/67 , H01L21/677 , H01L21/687
CPC分类号： H01L21/6715 , H01L21/67196 , H01L21/67248 , H01L21/67742 , H01L21/68764
摘要： Disclosed is a substrate processing apparatus and a substrate processing method that may increase the amount of substrates produced by preventing a main transfer robot that transfers a substrate between a liquid treatment chamber and a heat treatment chamber from transferring an edge-exposed substrate. The substrate processing apparatus may include: an index module; a buffer module; a treatment module; and an interface module, in which the index module includes: a load port in which a container receiving a substrate is placed; and an index frame provided with an index robot for transferring the substrate between the container placed in the load port and the buffer module, the buffer module is provided with a buffer in which the substrate is placed, the treatment module includes: a liquid treatment chamber for liquid treating the substrate loaded from the buffer module; a heat treatment chamber for heat treating the substrate received from the buffer module; and a transfer chamber disposed between the liquid treatment chamber and the heat treatment chamber, and provided with a main transfer robot for transferring substrates to the buffer module, the liquid treatment chamber, and the heat treatment chamber, respectively, the interface module includes: an interface frame positioned between the treatment module and an external exposure device; an edge exposure chamber disposed within the interface frame and performing edge exposure processing on the substrate; and an interface robot disposed within the interface frame and transferring the substrate, and each of the main transfer robot and the interface robot loads or unloads the substrate into or from the edge exposure chamber.

8. 发明公开

US20240387204A1 FREQUENCY AND PHASE CONTROLLED TRANSDUCERS AND SENSING 审中-公开
公开(公告)号：US20240387204A1
公开(公告)日：2024-11-21
申请号：US18664510
申请日：2024-05-15
申请人： Anand Deo
发明人： Anand Deo
IPC分类号： H01L21/67 , A61F7/12 , H01L21/324 , H05B1/02 , H05B6/50
CPC分类号： H01L21/67103 , A61F7/12 , H01L21/324 , H01L21/67248 , H05B1/023 , H05B6/50
摘要： Localized heating can use a fixed-frequency planar transmission line resonators arranged along a main-line, selected by tuning an electromagnetic input signal frequency applied to the main line for depositing heat in an adjacent active substrate. More generally, adjusting input signal frequency can be used to selectively address and energize an electromagnetic-to-heat, an electromagnetic-to-vibration, or other transducer to controllably direct energy toward a desired transducer load. Resonators or other electromagnetically energized transducers can be arranged to electromagnetically interfere, such that specifying or adjusting a relative phase of applied electrical signals can be used to specify or adjust the energy directed toward a desired transducer load. Temperature sensing can characterize a material in a target region near the transducer. A cold-hot-cold temperature profile can better manage temperature and avoid overheating a dielectric material such as the active substrate material.

9. 发明公开

US20240387177A1 BONDING METHOD, BONDING DEVICE, AND HOLDING MEMBER 审中-公开
公开(公告)号：US20240387177A1
公开(公告)日：2024-11-21
申请号：US18785246
申请日：2024-07-26
申请人： NIKON CORPORATION
发明人： Hajime MITSUISHI , Isao SUGAYA , Minoru FUKUDA , Masaki TSUNODA , Hidehiro MAEDA , Ikuhiro KUWANO
IPC分类号： H01L21/18 , B23K20/00 , H01L21/02 , H01L21/50 , H01L21/67 , H01L21/68 , H01L21/683 , H01L21/687
CPC分类号： H01L21/185 , B23K20/002 , H01L21/02 , H01L21/50 , H01L21/67092 , H01L21/67259 , H01L21/681 , H01L21/682 , H01L21/6831 , H01L21/6838 , H01L21/68735
摘要： A method for bonding a first substrate and a second substrate includes: forming a protrusion at a partial region of the first substrate; measuring a position of the first substrate after the protrusion is formed in the first substrate; and bonding the first substrate and the second substrate by contacting the protrusion of the first substrate with a surface of the second substrate to form a contact region and enlarging the contact region.

10. 发明公开

US20240387146A1 WAFER TREATMENT SYSTEM AND METHOD OF TREATING WAFER 审中-公开
公开(公告)号：US20240387146A1
公开(公告)日：2024-11-21
申请号：US18789812
申请日：2024-07-31
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
发明人： Po Hsun CHEN , Chun-Wei CHOU , Keng-Ying LIAO , Tzu-Pin LIN , Tai-Chin WU , Su-Yu YEH , Po-Zen CHEN
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/67
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32715 , H01L21/3065 , H01L21/67069 , H01J2237/334
摘要： A wafer treatment system is provided. The wafer treatment system includes a wafer treatment chamber defining a treatment area within which a wafer is treated. The wafer treatment system includes a gas injection system. The gas injection system includes a gas injector configured to inject a first gas, used for treatment of the wafer, into the treatment area. A first gas tube is configured to conduct the first gas at a first temperature to the gas injector. The gas injection system includes a heating enclosure enclosing the gas injector. A second gas tube is configured to conduct a heated gas to the heating enclosure to increase an enclosure temperature at the heating enclosure to a second enclosure temperature. A temperature of the first gas is increased in the gas injector from the first temperature to a second temperature due to the second enclosure temperature at the heating enclosure.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式