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1. 发明授权

US09169553B2 Semiconductor device producing method 有权
标题翻译：半导体器件制造方法
公开(公告)号：US09169553B2
公开(公告)日：2015-10-27
申请号：US13156025
申请日：2011-06-08
申请人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
发明人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
IPC分类号： C23C16/00 , C23C16/44 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/45536
摘要： A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
摘要翻译：基板处理装置包括反应容器11，形成容纳基板1的空间，并且适于提供多个反应气体以进行基板的所需处理;形成在反应容器11中用于排出反应容器的排气口 11，以及用于将至少多个反应气体供给到反应容器11中的气体供给系统70A，70B，气体供给系统70A，70B，其包括用于供给清洁气体以进行所需基板的处理的清洗气体供给单元 1，从而除去反应容器11中的附着物;以及后处理气体供给单元，用于提供能够除去残留在反应容器11中的清洁气体中的元素的后处理气体，清洁气体，后处理气体含有用于进行基材的所需加工的所有反应气体。

2. 发明授权

US08828141B2 Substrate processing apparatus and method for manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08828141B2
公开(公告)日：2014-09-09
申请号：US12379420
申请日：2009-02-20
申请人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
发明人： Masanori Sakai , Yuji Takebayashi , Tsutomu Kato , Shinya Sasaki , Hirohisa Yamazaki
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , C23C16/52 , C23F1/00 , H01L21/306 , C23C16/40 , C23C16/44 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4584 , C23C16/405 , C23C16/4412 , C23C16/45546 , C23C16/45591
摘要： A substrate processing apparatus of the present invention comprises: a processing chamber for storing and processing substrates stacked in multiple stages in horizontal posture; a processing gas supply unit for supplying two or more types of the processing gases to the inside of the processing chamber; an inactive gas supply unit for supplying an inactive gas to the inside of the processing chamber; and an exhaust unit for exhausting an atmosphere of the inside of the processing chamber, wherein the processing gas supply unit has at least two processing gas supply nozzles which extend running along an inner wall of the processing chamber in the stacking direction of the substrates and supply the processing gas to the inside of the processing chamber, and the inactive gas supply unit has a pair of inactive gas supply nozzles which are provided so as to extend running along the inner wall of the processing chamber in the stacking direction of the substrates and so as to sandwich at least one processing gas supply nozzle of the at least two processing gas supply nozzles from both sides thereof, along the circumferential direction of the substrates, and which supply the inactive gas to the inside of the processing chamber.
摘要翻译：本发明的基板处理装置包括：处理室，用于以水平姿态多层堆放和处理基板; 处理气体供应单元，用于将两种或多种类型的处理气体供应到处理室的内部; 用于向处理室的内部供应惰性气体的非活性气体供应单元; 以及用于排出处理室内部的气氛的排气单元，其中处理气体供应单元具有至少两个处理气体供应喷嘴，所述处理气体供应喷嘴沿着基板的堆叠方向沿处理室的内壁延伸并且供应处理室内部的处理气体和非活性气体供给单元具有一对非活性气体供给喷嘴，其设置成沿着基板的堆叠方向沿着处理室的内壁延伸，因此从而沿着基板的圆周方向从其两侧夹着至少两个处理气体供给喷嘴的至少一个处理气体供给喷嘴，并将惰性气体供给到处理室的内部。

3. 发明授权

US08593139B2 Magnetic sensor 有权
标题翻译：磁传感器
公开(公告)号：US08593139B2
公开(公告)日：2013-11-26
申请号：US12947328
申请日：2010-11-16
申请人： Naoki Ohta , Hiraku Hirabayashi , Masanori Sakai , Hiroshi Naganuma
发明人： Naoki Ohta , Hiraku Hirabayashi , Masanori Sakai , Hiroshi Naganuma
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/0029
摘要： A magnetic sensor includes a spin valve-type magneto-resistive element, a voltage detection part, a coil, and a current control part, the coil being configured to apply a measuring magnetic field to the spin valve-type magneto-resistive element upon application of a current, the voltage detection part being configured to output a detection signal to the current control part upon detecting an output voltage of the spin valve-type magneto-resistive element reaching a predetermined voltage value, the current control part being configured to control the current to unidirectionally increase or unidirectionally decrease a strength of the measuring magnetic field from an initial value, but upon input of the detection signal, control the current to return the strength of the measuring magnetic field to the initial value, the initial value being a magnetic field strength where the spin valve-type magneto-resistive element reaches saturation magnetization.
摘要翻译：磁传感器包括自旋阀型磁阻元件，电压检测部件，线圈和电流控制部件，该线圈被配置为在应用时向自旋阀型磁阻元件施加测量磁场电流检测部分被配置为在检测到自旋阀型磁阻元件的输出电压达到预定电压值时将检测信号输出到电流控制部分，该电流控制部分被配置为控制电流控制部分电流从初始值单向增加或单向地降低测量磁场的强度，但是当输入检测信号时，控制电流将测量磁场的强度返回到初始值，初始值为磁自旋阀型磁阻元件达到饱和磁化强度的场强。

4. 发明授权

US08428455B2 Image pickup unit and image pickup apparatus 有权
标题翻译：图像拾取单元和图像拾取装置
公开(公告)号：US08428455B2
公开(公告)日：2013-04-23
申请号：US12871654
申请日：2010-08-30
申请人： Yoshikazu Asai , Masanori Sakai
发明人： Yoshikazu Asai , Masanori Sakai
IPC分类号： G03B17/02
CPC分类号： G03B17/02
摘要： An apparatus includes an image sensor unit, a retaining member configured to retain the image sensor unit on a photographer side and to retain an optical member on an object side, a first sealing member configured, when the image sensor unit is mounted on the retaining member, to form a closely sealed space by sealing between the image sensor unit and the retaining member, the first sealing member being provided on the photographer side of the retaining member, and a second sealing member configured, when the optical member is mounted on the retaining member, to form a closely sealed space by sealing between the optical member and the retaining member, the second sealing member being provided on the object side.
摘要翻译：一种装置，包括图像传感器单元，保持构件，其被配置为将图像传感器单元保持在拍摄者侧并将光学构件保持在物体侧;第一密封构件，当图像传感器单元安装在保持构件上时，通过密封图像传感器单元和保持构件之间形成密封空间，第一密封构件设置在保持构件的摄影者侧上，第二密封构件构成为当光学构件安装在保持构件通过密封在光学构件和保持构件之间形成密封的空间，第二密封构件设置在物体侧。

5. 发明申请

US20120108077A1 SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：基板加工设备和半导体器件制造方法
公开(公告)号：US20120108077A1
公开(公告)日：2012-05-03
申请号：US13231984
申请日：2011-09-14
申请人： Yukinao KAGA , Tatsuyuki SAITO , Masanori SAKAI , Takashi YOKOGAWA
发明人： Yukinao KAGA , Tatsuyuki SAITO , Masanori SAKAI , Takashi YOKOGAWA
IPC分类号： H01L21/316 , H01L21/314 , C23C16/34 , C23C16/458 , C23C16/52 , H01L21/318 , C23C16/455
CPC分类号： C23C16/34 , C23C16/45546 , C23C16/4584 , C23C16/56 , H01L21/28556 , H01L21/28562
摘要： Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.
摘要翻译：公开了一种基板处理装置，其包括：支撑基板的基板支撑部件; 能够容纳基板支撑构件的处理室; 使所述基板支撑部件旋转的旋转机构; 从所述处理室执行所述基板支撑构件的承载机构; 将原料气体供给到处理室内的原料气体供给系统; 含氮气体供给系统，其向所述处理室供给含氮气体; 以及通过使用原料气体和含氮气体在基板上形成氮化膜之后，控制原料气体供给系统，含氮气体供给系统，搬运机构和旋转机构的控制器，在从处理室旋转的同时支撑基板的基板支撑构件。

6. 发明申请

US20120034788A1 SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及半导体器件的制造方法
公开(公告)号：US20120034788A1
公开(公告)日：2012-02-09
申请号：US13270811
申请日：2011-10-11
申请人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
发明人： Masanori Sakai , Toru Kagaya , Hirohisa Yamazaki
IPC分类号： H01L21/31
CPC分类号： H01L21/3162 , C23C16/403 , C23C16/45546 , C23C16/4557 , C23C16/45578 , C23C16/46 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/0228 , H01L21/3141 , H01L21/67109
摘要： A substrate treatment apparatus includes a reaction tube and a heater heating a silicon wafer. Trimethyl aluminum (TMA) and ozone (O3) are alternately fed into the reaction tubeto generate Al2O3 film on the surface of the wafer. The apparatus also includes supply tubes and for flowing the ozone and TMA and a nozzle supplying gas into the reaction tube. The two supply tubes are connected to the nozzle disposed inside the heater in a zone inside the reaction tube where a temperature is lower than a temperature near the wafer, and the ozone and TMA are supplied into the reaction tube through the nozzle.
摘要翻译：基板处理装置包括反应管和加热硅晶片的加热器。将三甲基铝（TMA）和臭氧（O3）交替地进料到反应管中，以在晶片的表面上产生Al 2 O 3膜。该设备还包括供应管和用于使臭氧和TMA流动的喷嘴和向反应管供应气体的喷嘴。两个供应管连接到设置在加热器内部的喷嘴内的温度低于晶片温度的反应管内的区域，臭氧和TMA通过喷嘴供应到反应管中。

7. 发明授权

US08105957B2 Method of producing semiconductor device 有权
公开(公告)号：US08105957B2
公开(公告)日：2012-01-31
申请号：US12415821
申请日：2009-03-31
申请人： Hironobu Miya , Kazuyuki Toyoda , Taketoshi Sato , Masayuki Asai , Norikazu Mizuno , Masanori Sakai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Taketoshi Sato , Masayuki Asai , Norikazu Mizuno , Masanori Sakai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/469
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.

8. 发明申请

US20110300722A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20110300722A1
公开(公告)日：2011-12-08
申请号：US13156025
申请日：2011-06-08
申请人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
发明人： Masanori Sakai , Nobuhito Shima , Kazuyuki Okuda
IPC分类号： H01L21/318
CPC分类号： C23C16/4405 , C23C16/45536
摘要： A substrate processing device comprises a reaction vessel 11 forming a space receiving a substrate 1 and adapted to have a plurality of reaction gases supplied thereto to perform desired processing of the substrate, an exhaust port 16 formed in the reaction vessel 11 for exhausting the reaction vessel 11, and a gas supply system 70A, 70B for supplying at least a plurality of reaction gases into the reaction vessel 11, the gas supply system 70A, 70B including a cleaning gas supply unit for supplying a cleaning gas to perform desired processing of the substrate 1 to thereby remove adherents in the reaction vessel 11, and a post-processing gas supply unit for supplying a post-processing gas capable of removing the elements contained in the cleaning gas remaining in the reaction vessel 11 after the adherents have been removed by supplying the cleaning gas, the post-processing gas containing all of the reaction gases used in performing desired processing of the substrate.
摘要翻译：基板处理装置包括反应容器11，形成容纳基板1的空间，并且适于提供多个反应气体以进行基板的所需处理;形成在反应容器11中用于排出反应容器的排气口 11，以及用于将至少多个反应气体供给到反应容器11中的气体供给系统70A，70B，气体供给系统70A，70B，其包括用于供给清洁气体以进行所需基板的处理的清洗气体供给单元 1，从而除去反应容器11中的附着物;以及后处理气体供给单元，用于提供能够除去残留在反应容器11中的清洁气体中的元素的后处理气体，清洁气体，后处理气体含有用于进行基材的所需加工的所有反应气体。

9. 发明申请

US20110221433A1 MAGNETIC SENSOR 有权
标题翻译：磁传感器
公开(公告)号：US20110221433A1
公开(公告)日：2011-09-15
申请号：US12947328
申请日：2010-11-16
申请人： Naoki OHTA , Hiraku Hirabayashi , Masanori Sakai , Hiroshi Naganuma
发明人： Naoki OHTA , Hiraku Hirabayashi , Masanori Sakai , Hiroshi Naganuma
IPC分类号： G01R33/02
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/0029
摘要： A magnetic sensor includes a spin valve-type magneto-resistive element, a voltage detection part, a coil, and a current control part, the coil being configured to apply a measuring magnetic field to the spin valve-type magneto-resistive element upon application of a current, the voltage detection part being configured to output a detection signal to the current control part upon detecting an output voltage of the spin valve-type magneto-resistive element reaching a predetermined voltage value, the current control part being configured to control the current to unidirectionally increase or unidirectionally decrease a strength of the measuring magnetic field from an initial value, but upon input of the detection signal, control the current to return the strength of the measuring magnetic field to the initial value, the initial value being a magnetic field strength where the spin valve-type magneto-resistive element reaches saturation magnetization.
摘要翻译：磁传感器包括自旋阀型磁阻元件，电压检测部件，线圈和电流控制部件，该线圈被配置为在应用时向自旋阀型磁阻元件施加测量磁场电流检测部分被配置为在检测到自旋阀型磁阻元件的输出电压达到预定电压值时将检测信号输出到电流控制部分，该电流控制部分被配置为控制电流控制部分电流从初始值单向增加或单向地降低测量磁场的强度，但是当输入检测信号时，控制电流将测量磁场的强度返回到初始值，初始值为磁自旋阀型磁阻元件达到饱和磁化强度的场强。

10. 发明申请

US20110186984A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20110186984A1
公开(公告)日：2011-08-04
申请号：US13014419
申请日：2011-01-26
申请人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi YOKOGAWA
发明人： Tatsuyuki SAITO , Masanori SAKAI , Yukinao KAGA , Takashi YOKOGAWA
IPC分类号： H01L23/482 , H01L21/00 , C23C16/455 , H01L21/3205
CPC分类号： C23C16/455 , C23C16/301 , C23C16/303 , C23C16/45578 , C23C16/52 , H01L21/00 , H01L21/02186 , H01L21/3205 , H01L23/482 , H01L2924/0002 , H01L2924/00
摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.
摘要翻译：本发明提供一种能够形成导电膜的基板处理装置和半导体装置的制造方法，所述半导体装置在较高的成膜速率下能够形成致密的导电膜，其包含低浓度源源杂质并具有低电阻率。基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。这里，第一处理气体供给系统和第二处理气体供给系统中的至少一个包括沿基板的堆叠方向垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供至少一个当通过在具有不同成膜速率的脉冲下将第一处理气体和第二处理气体供应到处理室中时，通过具有不同形状的两个喷嘴将第一处理气体和第二处理气体输送到处理室中，。

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