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1. 发明申请

US20110176967A1 VERTICAL TYPE SEMICONDUCTOR DEVICE PRODUCING APPARATUS 审中-公开
标题翻译：垂直型半导体器件生产设备
公开(公告)号：US20110176967A1
公开(公告)日：2011-07-21
申请号：US13074835
申请日：2011-03-29
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： B01J19/00
CPC分类号： C23C16/45523 , C23C16/345
摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.
摘要翻译：垂直型半导体器件制造装置包括：垂直型反应室，其容纳多个堆叠的基板; 排出反应室的排气路径，通过排气路排出反应室的真空排气装置; 用于打开和关闭排气通道的排气阀; 向反应室供给有助于成膜的第一种气体的第一供给路径; 将有助于成膜的第二种气体供给到反应室的第二供给路径; 分别打开和关闭第一和第二供应路径的第一和第二供气阀; 以及控制器，其控制所述排气阀和所述第一和第二气体供给阀，使得当所述第一种气体被供应到所述反应室时，所述第一种气体在状态下从所述第一供给路径供应到所述反应室其中停止反应室的排气以将反应室中的多个基板暴露于第一种气体，并且当将第二种气体供应到反应室时，将第二种气体供应到在反应室被真空排气装置排出的状态下通过第二供给路径反应室，将反应室内的多个基板暴露于第二种气体。

2. 发明申请

US20100263593A1 SUBSTRATE PROCESSING APPARATUS AND REACTION CONTAINER 有权
标题翻译：基板加工装置和反应容器
公开(公告)号：US20100263593A1
公开(公告)日：2010-10-21
申请号：US12823001
申请日：2010-06-24
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/00
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

3. 发明申请

US20080251014A1 Substrate Processing Apparatus and Reaction Container 有权
标题翻译：基板加工装置及反应容器
公开(公告)号：US20080251014A1
公开(公告)日：2008-10-16
申请号：US11933169
申请日：2007-10-31
申请人： Tadashi KONTANI , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi KONTANI , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/448 , C23C16/452 , C23C16/54
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

4. 发明申请

US20080160214A1 SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：基板加工设备
公开(公告)号：US20080160214A1
公开(公告)日：2008-07-03
申请号：US12039686
申请日：2008-02-28
申请人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
发明人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
IPC分类号： C23C16/455
CPC分类号： C23C16/455
摘要： A substrate treating apparatus comprises a reaction chamber 6 forming a space for treating a substrate 7, and a gas reserving part 10 connected to the reaction chamber 6, having a gas supply pipe for supplying gas for treating the substrate 7 and a gas exhaust pipe for exhausting the gas inside the reaction chamber 6 and reserving gas supplied to the reaction chamber 6, and reserving the gas to be supplied to the reaction chamber 6 midway in the gas supply pipe, and a bypass line 11 bypassing the gas reserving part 10, the gas receiving part 10 being arranged parallel with the bypass line, and a control part 60 supplying the treating gas to the reaction chamber 6 by using either of the gas reserving part 10 and the bypass line 11 when the substrate 7 is treated.
摘要翻译：基板处理装置包括形成用于处理基板7的空间的反应室6和连接到反应室6的气体储存部10，具有用于供给用于处理基板7的气体的气体供给管和用于处理基板7的排气管排出反应室6内的气体并储存供应到反应室6的气体，并将供给到气体供给管中途的反应室6的气体和旁通燃气保持部10的旁通管路11保持气体接收部分10与旁路管线平行布置;以及控制部分60，当处理基板7时，通过使用气体储存部分10和旁通管线11中的任何一个将处理气体供应到反应室6。

5. 发明申请

US20050217577A1 Vertical type semiconductor device producing apparatus 审中-公开
公开(公告)号：US20050217577A1
公开(公告)日：2005-10-06
申请号：US11121919
申请日：2005-05-05
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/345
摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.

6. 发明授权

US06905549B2 Vertical type semiconductor device producing apparatus 有权
标题翻译：垂直型半导体器件制造装置
公开(公告)号：US06905549B2
公开(公告)日：2005-06-14
申请号：US10411092
申请日：2003-04-11
申请人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
发明人： Kazuyuki Okuda , Yasushi Yagi , Toru Kagaya , Masanori Sakai
IPC分类号： C23C16/34 , C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45523 , C23C16/345 , Y10T29/41
摘要： A vertical type semiconductor device producing apparatus comprises a vertical type reaction chamber which is to accommodate a plurality of stacked substrates; an exhaust path which exhausts the reaction chamber, a vacuum exhaust device which exhausts the reaction chamber through the exhaust path; an exhaust valve which opens and closes the exhaust path; a first supply path which supplies a first kind of gas, which contributes to film formation, to the reaction chamber; a second supply path which supplies a second kind of gas, which contributes to the film formation, to the reaction chamber; a first and a second gas supply valves which respectively open and close the first and second supply paths; and a controller which controls the exhaust valve and the first and second gas supply valves such that when the first kind of gas is supplied to the reaction chamber, the first kind of gas is supplied to the reaction chamber from the first supply path in a state in which exhaust of the reaction chamber is being stopped to expose the plurality of substrates in the reaction chamber to the first kind of gas, and when the second kind of gas is supplied to the reaction chamber, the second kind of gas is supplied to the reaction chamber through the second supply path in a state in which the reaction chamber is being exhausted by the vacuum exhaust device to expose the plurality of substrates in the reaction chamber to the second kind of gas.
摘要翻译：垂直型半导体器件制造装置包括：垂直型反应室，其容纳多个堆叠的基板; 排出反应室的排气路径，通过排气路排出反应室的真空排气装置; 用于打开和关闭排气通道的排气阀; 向反应室供给有助于成膜的第一种气体的第一供给路径; 将有助于成膜的第二种气体供给到反应室的第二供给路径; 分别打开和关闭第一和第二供应路径的第一和第二供气阀; 以及控制器，其控制所述排气阀和所述第一和第二气体供给阀，使得当所述第一种气体被供应到所述反应室时，所述第一种气体在状态下从所述第一供给路径供应到所述反应室其中停止反应室的排气以将反应室中的多个基板暴露于第一种气体，并且当将第二种气体供应到反应室时，将第二种气体供应到在反应室被真空排气装置排出的状态下通过第二供给路径反应室，将反应室内的多个基板暴露于第二种气体。

7. 发明授权

US08047158B2 Substrate processing apparatus and reaction container 有权
公开(公告)号：US08047158B2
公开(公告)日：2011-11-01
申请号：US11933169
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/509 , C23C16/505 , C23C16/503 , C23C16/50 , C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

8. 发明授权

US07900580B2 Substrate processing apparatus and reaction container 有权
标题翻译：基材加工设备和反应容器
公开(公告)号：US07900580B2
公开(公告)日：2011-03-08
申请号：US11933208
申请日：2007-10-31
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/503 , C23C16/505 , C23C16/509 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

9. 发明授权

US07713582B2 Substrate processing method for film formation 有权
标题翻译：用于成膜的基板加工方法
公开(公告)号：US07713582B2
公开(公告)日：2010-05-11
申请号：US12039686
申请日：2008-02-28
申请人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
发明人： Masanori Sakai , Toru Kagaya , Nobuhito Shima
IPC分类号： C23C16/455
CPC分类号： C23C16/455
摘要： A film-forming method that includes providing a substrate to be film-formed in a reaction chamber of an apparatus that includes: the reaction chamber; a first gas supply pipe in fluid communication with the reaction chamber for carrying a first processing gas to the reaction chamber; a second gas supply pipe in fluid communication with the reaction chamber for carrying a second processing gas to the reaction chamber; a gas reservoir in fluid communication with the first gas supply pipe; and a bypass line in fluid communication with the first gas supply pipe, the bypass line bypassing the gas reservoir; and the steps of alternately supplying the first processing gas and the second processing gas into the reaction chamber a plurality of times to form a film on the substrate, and wherein when the first gas is supplied, the gas reservoir or the bypass line is selected to supply the first gas into the reaction chamber through the first gas supply pipe, and when the second gas is supplied the second gas is supplied through the second gas supply pipe.
摘要翻译：一种成膜方法，其特征在于，包括在反应室内设置成膜的基板，所述反应室包括：所述反应室; 与所述反应室流体连通以将第一处理气体输送到所述反应室的第一气体供给管; 与所述反应室流体连通以将第二处理气体输送到所述反应室的第二气体供给管; 与所述第一气体供给管流体连通的气体储存器; 以及与第一气体供给管流体连通的旁通管路，旁通管线绕过气体储存器; 以及将第一处理气体和第二处理气体交替地供给到反应室中以在基板上形成膜的步骤，并且其中当供应第一气体时，选择气体储存器或旁路管线通过第一气体供给管将第一气体供应到反应室中，并且当供应第二气体时，通过第二气体供给管供给第二气体。

10. 发明申请

US20080121180A1 Substrate Processing Apparatus and Reaction Container 有权
公开(公告)号：US20080121180A1
公开(公告)日：2008-05-29
申请号：US11933208
申请日：2007-10-31
申请人： Tadashi KONTANI , Kazuyuki TOYODA , Taketoshi SATO , Toru KAGAYA , Nobuhito SHIMA , Nobuo ISHIMARU , Masanori SAKAI , Kazuyuki OKUDA , Yasushi YAGI , Seiji WATANABE , Yasuo KUNII
发明人： Tadashi KONTANI , Kazuyuki TOYODA , Taketoshi SATO , Toru KAGAYA , Nobuhito SHIMA , Nobuo ISHIMARU , Masanori SAKAI , Kazuyuki OKUDA , Yasushi YAGI , Seiji WATANABE , Yasuo KUNII
IPC分类号： C23C16/54
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.

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