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1. 发明申请

US20120329286A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND RECORDING MEDIUM 有权
标题翻译：半导体器件制造方法，基板处理方法，基板处理装置和记录介质
公开(公告)号：US20120329286A1
公开(公告)日：2012-12-27
申请号：US13529373
申请日：2012-06-21
申请人： Tsuyoshi TAKEDA , Taketoshi SATO
发明人： Tsuyoshi TAKEDA , Taketoshi SATO
IPC分类号： H01L21/312 , C23C16/52 , C23C16/32
CPC分类号： H01L21/0228 , C23C16/30 , C23C16/325 , C23C16/36 , C23C16/4412 , C23C16/45523 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02529 , H01L21/0262
摘要： A semiconductor device manufacturing method includes: accommodating a substrate in a processing chamber; and supplying a silicon-based gas and an amine-based gas into the processing chamber that is heated to form a film including silicon and carbon on the substrate. The forming of the film including silicon and carbon includes: supplying the silicon-based gas and the amine-based gas into the processing chamber and confining the silicon-based gas and the amine-based gas in the processing chamber; maintaining a state in which the silicon-based gas and the amine-based gas are confined in the processing chamber, and exhausting an inside of the processing chamber.
摘要翻译：一种半导体器件制造方法，包括：将基板容纳在处理室中; 以及将硅基气体和胺类气体供给到加热室中，以在衬底上形成包含硅和碳的膜。包括硅和碳的膜的形成包括：将硅基气体和胺类气体供应到处理室中，并将硅基气体和胺类气体限制在处理室中; 保持硅基气体和胺类气体被限制在处理室中并排出处理室内部的状态。

2. 发明授权

US08261692B2 Substrate processing apparatus and reaction container 有权
标题翻译：基材加工设备和反应容器
公开(公告)号：US08261692B2
公开(公告)日：2012-09-11
申请号：US12823001
申请日：2010-06-24
申请人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
发明人： Tadashi Kontani , Kazuyuki Toyoda , Taketoshi Sato , Toru Kagaya , Nobuhito Shima , Nobuo Ishimaru , Masanori Sakai , Kazuyuki Okuda , Yasushi Yagi , Seiji Watanabe , Yasuo Kunii
IPC分类号： C23C16/50 , C23C16/509 , C23C16/503 , C23C16/505 , C23C16/458 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45546 , C23C16/452 , C23C16/45542 , C23C16/45578 , C23C16/4583 , H01J37/3244
摘要： A substrate processing apparatus comprises a reaction chamber which is to accommodate stacked substrates, a gas introducing portion, and a buffer chamber, wherein the gas introducing portion is provided along a stacking direction of the substrates, and introduces substrate processing gas into the buffer chamber, the buffer chamber includes a plurality of gas-supply openings provided along the stacking direction of the substrates, and the processing gas introduced from the gas introducing portion is supplied from the gas-supply openings to the reaction chamber.
摘要翻译：基板处理装置包括容纳层叠基板的反应室，气体导入部和缓冲室，其中，沿着基板的堆叠方向设置气体导入部，并将基板处理气体导入缓冲室，缓冲室包括沿着基板的层叠方向设置的多个气体供给开口，从气体导入部导入的处理气体从气体供给口供给到反应室。

3. 发明授权

US08227346B2 Method of producing semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US08227346B2
公开(公告)日：2012-07-24
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/44
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

4. 发明申请

US20120077350A1 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 有权
标题翻译：生产半导体器件的方法
公开(公告)号：US20120077350A1
公开(公告)日：2012-03-29
申请号：US13306654
申请日：2011-11-29
申请人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu MIYA , Kazuyuki TOYODA , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/31
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
摘要翻译：本发明公开了一种半导体器件的制造方法，其包括将第一反应物供给到基板以使第一反应物的配体与配体之间的配体交换反应作为存在于基板的表面上的反应性部位的第一工序，第二步骤，除去剩余的第一反应物;第三步骤，向第二反应物提供第二反应物，使第二反应物在第一步骤中交换后引起配体交换反应改变配体;第四步，去除剩余的第二反应物，以及第五步骤，将等离子体激发的第三反应物供入底物，以使配体交换反应在第三步中将未被交换反应的配体交换反应部位转化为反应位点，其中第一至第五步骤重复预定时间。

5. 发明授权

US08044624B2 Load control apparatus and method for processing diagnosis signal for the same 有权
标题翻译：用于处理诊断信号的负载控制装置和方法相同
公开(公告)号：US08044624B2
公开(公告)日：2011-10-25
申请号：US12153281
申请日：2008-05-15
申请人： Yosuke Matsuo , Shigeru Takeuchi , Taketoshi Sato
发明人： Yosuke Matsuo , Shigeru Takeuchi , Taketoshi Sato
IPC分类号： H02P1/04
CPC分类号： F02D41/3082 , F02D41/221 , H02P7/29 , H02P29/02
摘要： A load control apparatus outputs a PWM signal to a switching element to control a load. The switching element is connected between a power supply and a grand in series with the load. An abnormal increase detecting unit outputs an abnormal increase detection signal when detecting abnormal increase in applied voltage, which is applied to the load, relative to target voltage. An abnormal decrease detecting unit outputs an abnormal decrease detection signal when detecting abnormal decrease in the applied voltage relative to the target voltage. An operating state monitoring unit outputs a normally operating signal when the load normally operates. A signal combining unit generates a combined signal by combining the abnormal increase detection signal, the abnormal decrease detection signal, and the normally operating signal and outputs the combined signal via a common signal output terminal.
摘要翻译：负载控制装置向开关元件输出PWM信号以控制负载。开关元件连接在电源和与负载串联的电源之间。当检测到相对于目标电压施加到负载的施加电压的异常增加时，异常增加检测单元输出异常增加检测信号。当检测到相对于目标电压的施加电压的异常降低时，异常下降检测单元输出异常降低检测信号。操作状态监控单元在负载正常运行时输出正常工作信号。信号组合单元通过组合异常增加检测信号，异常降低检测信号和正常操作信号来产生组合信号，并经由公共信号输出端输出组合信号。

6. 发明申请

US20110045675A1 SUBSTRATE PROCESSING APPARATUS AND PRODUCING METHOD OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板加工装置及半导体器件的制造方法
公开(公告)号：US20110045675A1
公开(公告)日：2011-02-24
申请号：US12916920
申请日：2010-11-01
申请人： Hironobu MIYA , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
发明人： Hironobu MIYA , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
IPC分类号： H01L21/30 , C23C16/455
CPC分类号： C23C16/45536 , C23C16/345 , C23C16/452 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control unit executes forming thin films on the substrates by supplying the first reactant, removing a surplus of the first reactant after the first reactant has been adsorbed on the product substrates, subsequently supplying the second reactant, to cause the second reactant to react with the first reactant adsorbed on the substrates, and executes the forming the thin films in a state where a number of the product substrates is insufficient when a number of the product substrates is less than a maximum number of the product substrates which can be held by the holder.
摘要翻译：公开了一种基板处理装置，包括处理室，用于保持至少多个产品基板的保持器，加热构件，供应构件以交替地供应至少第一反应物和第二反应物，以及控制单元，其中所述控制单元通过供给所述第一反应物，在所述基板上形成薄膜，在所述第一反应物被吸附在所述产物基板上之后除去剩余的所述第一反应物，随后供给所述第二反应物，以使所述第二反应物与所述第二反应物反应第一反应物吸附在基板上，并且当产品基板的数量少于可由保持件保持的产品基板的最大数量时，在多个产品基板不足的状态下执行薄膜的形成。

7. 发明授权

US07892983B2 Substrate processing apparatus and producing method of semiconductor device 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US07892983B2
公开(公告)日：2011-02-22
申请号：US11664726
申请日：2005-10-05
申请人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
发明人： Hironobu Miya , Taketoshi Sato , Norikazu Mizuno , Masanori Sakai , Takaaki Noda
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45536 , C23C16/345 , C23C16/452 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3141 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： Disclosed is a substrate processing apparatus, comprising a processing chamber, a holder to hold at least a plurality of product substrates, a heating member, a supplying member to alternately supply at least a first reactant and a second reactant, and a control unit, wherein the control unit executes forming thin films on the substrates by supplying the first reactant, removing a surplus of the first reactant after the first reactant has been adsorbed on the product substrates, subsequently supplying the second reactant, to cause the second reactant to react with the first reactant adsorbed on the substrates, and executes the forming the thin films in a state where a number of the product substrates is insufficient when a number of the product substrates is less than a maximum number of the product substrates which can be held by the holder.
摘要翻译：公开了一种基板处理装置，包括处理室，用于保持至少多个产品基板的保持器，加热构件，供应构件以交替地供应至少第一反应物和第二反应物，以及控制单元，其中所述控制单元通过供给所述第一反应物，在所述基板上形成薄膜，在所述第一反应物被吸附在所述产物基板上之后除去剩余的所述第一反应物，随后供给所述第二反应物，以使所述第二反应物与所述第二反应物反应第一反应物吸附在基板上，并且当产品基板的数量少于可由保持件保持的产品基板的最大数量时，在多个产品基板不足的状态下执行薄膜的形成。

8. 发明申请

US20100233887A1 PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权
标题翻译：半导体器件和衬底加工设备的生产方法
公开(公告)号：US20100233887A1
公开(公告)日：2010-09-16
申请号：US12788697
申请日：2010-05-27
申请人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
发明人： Hironobu Miya , Kazuyuki Toyoda , Norikazu Mizuno , Taketoshi Sato , Masanori Sakai , Masayuki Asai , Kazuyuki Okuda , Hideki Horita
IPC分类号： H01L21/314 , H01L21/316 , H01L21/318
CPC分类号： C23C16/403 , C23C16/345 , C23C16/45536 , C23C16/45546 , C23C16/509 , H01L21/0214 , H01L21/0217 , H01L21/02178 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/02332 , H01L21/0234 , H01L21/3141 , H01L21/3162 , H01L21/3185
摘要： A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
摘要翻译：一种半导体器件的制造方法，包括：第一步骤，将第一反应材料供给到容纳在处理室中的基板上以进行配体取代反应，所述配体作为存在于所述基板的表面上的反应位点和所述配体的配体第一反应材料，从处理室除去过量的第一反应材料的第二步骤，向基板供给第二反应材料以使经取代第一步的配体经受相对于反应的配体取代反应的第三步骤从处理室中除去过量的第二反应物质的第四步骤，以及将由等离子体激发的第三反应物质供给到基板上的第五步骤，以使受体没有相对于反应位点进行取代反应的配体在第三步中，涉及相对于反应位点的配体取代反应，其中步骤1-5是重复的施加指定次数，直到在基板表面上形成所需厚度的膜。

9. 发明授权

US5786093A Magnetic recording medium having a backcoat composition with low chloride ion and sulfate ion extractables 失效
标题翻译：具有低氯离子和硫酸根离子可提取物的背层组合物的磁记录介质
公开(公告)号：US5786093A
公开(公告)日：1998-07-28
申请号：US748542
申请日：1996-11-13
申请人： Hiroji Naruse , Taketoshi Sato , Taro Ohmura
发明人： Hiroji Naruse , Taketoshi Sato , Taro Ohmura
IPC分类号： G11B5/73 , G11B5/735 , G11B5/70
CPC分类号： G11B5/7325 , G11B5/735 , Y10S428/90 , Y10T428/31609
摘要： A magnetic recording medium wherein a magnetic metal film has been formed on one surface of a non-magnetic substrate, and a back coat resulting from a non-magnetic pigment dispersed among a binder has been formed on the other, or reverse to the side upon which the magnetic film has been formed, characterized by that each of the chloride and sulfate ion contents of the back coat, according to the analysis by ion chromatography of its pure water extract, is not more than 5 ppm, and that the binder acting as a constituent of the back coat contains at least polycarbonate urethane.
摘要翻译：在非磁性基板的一个表面上形成有磁性金属膜的磁记录介质，另一方面形成了分散在粘合剂中的非磁性颜料产生的背涂层形成磁性膜的特征在于，根据其纯水提取物的离子色谱分析，背涂层中的氯化物和硫酸根离子含量各自不超过5ppm，并且粘合剂作为背部涂层的成分至少含有聚碳酸酯聚氨酯。

10. 发明授权

US4555608A Inverter device for induction heating 失效
标题翻译：变频器用于感应加热
公开(公告)号：US4555608A
公开(公告)日：1985-11-26
申请号：US522373
申请日：1983-07-05
申请人： Takumi Mizukawa , Yoshio Ogino , Hideki Ohmori , Taketoshi Sato
发明人： Takumi Mizukawa , Yoshio Ogino , Hideki Ohmori , Taketoshi Sato
IPC分类号： H05B6/12 , H05B6/06 , H05B6/64
CPC分类号： H05B6/062
摘要： An induction heating device makes use of a bridge inverter and has a DC power source, a plurality of switching elements forming a bridge inverter, and a circuit for detecting the turn-off of the switching elements. In order to detect the turn-off of the switching elements, an improved turn-off detection circuit is employed and an improved control circuit is installed to prevent the circuit from malfunctioning owing to external noise.
摘要翻译： PCT No.PCT / JP82 / 00426 Sec。 371日期：1983年7月5日 102（e）日期1983年7月5日PCT申请日1982年11月2日PCT公布。第WO83 / 01721号公报日本1983年5月11日。感应加热装置利用桥式逆变器，具有DC电源，形成桥式逆变器的多个开关元件和检测开关元件的截止的电路。为了检测开关元件的关断，采用改进的关断检测电路，并且安装改进的控制电路以防止电路由于外部噪声而发生故障。

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