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    • 1. 发明授权
    • Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling
    • 操作具有组合电感和电容耦合的高密度等离子体CVD反应堆的方法
    • US06465051B1
    • 2002-10-15
    • US08751899
    • 1996-11-18
    • Turgut SahinFred C. RedekerRomuald NowakShijian LiTimothy DyerDerek R. Witty
    • Turgut SahinFred C. RedekerRomuald NowakShijian LiTimothy DyerDerek R. Witty
    • H05H146
    • H01J37/32862C23C16/4405H01J37/32082
    • The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.
    • 本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法,同时通过气体注入口将蚀刻剂气体引入室中,并且将RF能量施加到室中的顶板电极,而不一定施加RF能量 到线圈天线,以便在真空室中击穿主要电容耦合的等离子体。 在另一个实施例中,该方法包括:每当反应器以电感耦合模式工作时,在将天线电极接地的同时向反应器线圈天线施加RF功率,并且每当反应器以电容耦合模式工作时,施加RF 电源到天花板电极,并且每当要清洁反应堆时,通过向天花板电极和线圈天线施加RF功率来清洁反应器,同时将蚀刻剂气体引入真空室。 在另一个实施方案中,该方法包括通过将沉积前体气体引入室中,同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积,并通过引入来清洁反应器 前体清洗气体进入室,同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。
    • 6. 发明申请
    • Line narrowing module
    • US20060114957A1
    • 2006-06-01
    • US11000684
    • 2004-11-30
    • J. Martin AlgotsRobert BergstedtWalter GillespieVladimir KulgeykoWilliam PartloGerman RylovRichard SandstromBrian StrateTimothy Dyer
    • J. Martin AlgotsRobert BergstedtWalter GillespieVladimir KulgeykoWilliam PartloGerman RylovRichard SandstromBrian StrateTimothy Dyer
    • H01S3/22
    • H01S3/1055G03F7/70025G03F7/70041H01S3/005H01S3/036H01S3/08H01S3/08004H01S3/08059H01S3/097H01S3/106H01S3/2251
    • A line narrowing method and module for a narrow band DUV high power high repetition rate gas discharge laser producing output laser light pulse beam pulses in bursts of pulses, the module having a nominal optical path are disclosed which may comprise: a dispersive center wavelength selection optic moveably mounted within an optical path of the line narrowing module, selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a first tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic, by selecting an angle of transmission of the laser light pulse beam containing the pulse toward the dispersive center wavelength selection optic; a second tuning mechanism operative in part to select the angle of incidence of the laser light pulse beam containing the respective pulse by changing the position of the dispersive center wavelength selection optic relative to the nominal optical path of the line narrowing module; wherein the second tuning mechanism coarsely selects a value for the center wavelength and the first tuning mechanism more finely selects the value for the center wavelength. The apparatus and method may further comprise at least one beam expanding and redirecting prism in the optical path of the line narrowing module; the first tuning mechanism selecting an angle of incidence of the at least a first spatially defined portion of the laser light pulse beam by changing the position of the at least one beam expanding prism relative to the nominal optical path of the line narrowing module. The first and second tuning mechanisms may be controlled by a center wavelength controller during a burst based upon feedback from a center wavelength detector detecting the center wavelength of at least one other pulse in the burst of pulses and the controller providing the feedback based upon an algorithm employing the detected center wavelength for the at least one other pulse in the burst. The first tuning mechanism may comprise an electro-mechanical course positioning mechanism and a fine positioning mechanism comprising an actuatable material that changes position or shape when actuated.
    • 7. 发明申请
    • ORBITING INDEXABLE BELT POLISHING STATION FOR CHEMICAL MECHANICAL POLISHING
    • 用于化学机械抛光的可索引的皮带抛光站
    • US20050009452A1
    • 2005-01-13
    • US10711229
    • 2004-09-02
    • Saket ChaddaTimothy DyerClinton Fruitman
    • Saket ChaddaTimothy DyerClinton Fruitman
    • B24B21/04B24B37/10B24B1/00
    • B24B37/105B24B21/04
    • An apparatus for planarizing a workpiece has a web with a face which is positioned adjacent the workpiece during planarization. At least one tension assembly is configured to maintain tension of the web. An orbiting assembly is configured to orbit the web relative to the workpiece. The apparatus for planarizing a workpiece may include first and second polishing surfaces where the first polishing surface has a substantially horizontal web with a face which is positioned adjacent the workpiece during the planarization process. The apparatus may also have a rotatable carousel and at least two workpiece carriers suspended from the carousel. Each of the carriers is configured to carry a workpiece and press the workpiece against one of the polishing surfaces while causing relative motion between the workpiece and the polishing surface. An apparatus for planarizing a workpiece which includes a plurality of polishing stations is also disclosed. At least one of the polishing stations has a web with a first face which is positioned adjacent the workpiece during planarization . The apparatus also includes an orbiting assembly configured to orbit the web relative to the workpiece.
    • 用于平坦化工件的装置具有在平坦化期间具有与工件相邻定位的面的腹板。 至少一个张力组件被配置成保持卷材的张力。 轨道组件被配置为相对于工件来绕轨道轨道。 用于平坦化工件的设备可以包括第一和第二抛光表面,其中第一抛光表面具有基本上水平的腹板,其中在平坦化过程期间邻近工件定位面。 该装置还可以具有可旋转的转盘和至少两个从转盘中悬挂的工件载体。 每个载体构造成承载工件并将工件压靠在抛光表面之一上,同时引起工件和抛光表面之间的相对运动。 还公开了一种用于平坦化包括多个抛光站的工件的设备。 抛光站中的至少一个具有在平坦化期间具有与工件相邻定位的第一面的腹板。 该装置还包括构造成相对于工件使幅材轨道运动的轨道组件。