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    • 5. 发明授权
    • Multiple coil antenna for inductively-coupled plasma generation systems
    • 用于电感耦合等离子体发生系统的多线圈天线
    • US06463875B1
    • 2002-10-15
    • US09711935
    • 2000-11-15
    • Jian J. ChenRobert G. VeltropThomas E. Wicker
    • Jian J. ChenRobert G. VeltropThomas E. Wicker
    • H05H146
    • H01J37/321
    • A radio frequency plasma multiple-coil antenna allows for controllable, uniform inductive coupling within a plasma reactor. According to exemplary embodiments, multiple coils are positioned on a dielectric window of a plasma chamber, and are powered by a single radio frequency generator and tuned by a single matching network. Each coil is either planar or a combination of a planar coil and a vertically stacked helical coil. The input end of each coil is connected to an input tuning capacitor and the output end is terminated to the ground through an output tuning capacitor. The location of the maximum inductive coupling of the radio frequency to the plasma is mainly determined by the output capacitor, while the input capacitor is mainly used to adjust current magnitude into each coil. By adjusting the current magnitude and the location of the maximum inductive coupling within each coil, the plasma density in different radial and azimuthal regions can be varied and controlled, and therefore, radially and azimuthally uniform plasma can be achieved.
    • 射频等离子体多线圈天线允许等离子体反应器内的可控的,均匀的电感耦合。 根据示例性实施例,多个线圈位于等离子体室的电介质窗口上,并且由单个射频发生器供电并由单个匹配网络调谐。 每个线圈是平面的或平面线圈和垂直堆叠的螺旋线圈的组合。 每个线圈的输入端连接到输入调谐电容器,输出端通过输出调谐电容端接到地。 射频对等离子体的最大感应耦合的位置主要由输出电容决定,而输入电容主要用于调整每个线圈的电流幅值。 通过调整每个线圈内的最大电感耦合的电流大小和位置,可以改变和控制不同径向和方位区域中的等离子体密度,因此可以实现径向和方位均匀的等离子体。
    • 6. 发明授权
    • Plasma generating apparatus and semiconductor manufacturing method
    • 等离子体发生装置和半导体制造方法
    • US06380684B1
    • 2002-04-30
    • US09573253
    • 2000-05-18
    • Yunlong LiMasanobu SatoYoshio TominagaNoriyoshi SatoSatoru Iizuka
    • Yunlong LiMasanobu SatoYoshio TominagaNoriyoshi SatoSatoru Iizuka
    • H05H146
    • H01J37/32082H01J37/3266
    • A plasma generating apparatus and processing method, which generate high-density plasma, even in the central portion of the plasma generating zone. The apparatus comprises rectangular electrodes, a rectangular fistulous discharge electrode which surrounds the plasma generating zone, and a vacuum chamber of rectangular cross-section. Permanent magnets surround the discharge electrode, produce predetermined magnetic lines of force with portions which extend approximately parallel to the central axis of discharge electrode. A pair of parallel plate electrodes define the extension of the plasma generating zone in the direction of the central axis of the discharge electrode. The apparatus is configured such that the magnetic lines of force passing through the central portion of the plasma generating zone do not intersect with the electrodes.
    • 即使在等离子体产生区域的中心部分也产生高密度等离子体的等离子体发生装置和处理方法。 该装置包括矩形电极,围绕等离子体生成区域的矩形排出电极和矩形横截面的真空室。 永磁体围绕放电电极,产生预定的磁力线,其部分大致平行于放电电极的中心轴延伸。 一对平行板电极限定等离子体生成区在放电电极的中心轴线方向上的延伸。 该装置被配置成使得通过等离子体产生区的中心部分的磁力线不与电极相交。
    • 10. 发明授权
    • Plasma processing method and apparatus
    • 等离子体处理方法和装置
    • US06720037B2
    • 2004-04-13
    • US09949616
    • 2001-09-12
    • Yukito AotaMasahiro Kanai
    • Yukito AotaMasahiro Kanai
    • H05H146
    • H01J37/32532C23C16/515
    • In a plasma processing method, on a back side of a cathode electrode is provided at least one conductor plate d.c. potentially insulated from the cathode electrode and an opposing electrode, and the cathode electrode and the conductor plate are enclosed with a shielding wall such that a ratio of an inter-electrode coupling capacitance provided by the cathode electrode and the opposing electrode to a coupling capacitance provided by the cathode electrode and a bottom surface of the shielding wall on the back side of the conductor plate is not less than a predetermined value. Thereby, a high-quality, high-speed plasma processing is realized.
    • 在等离子体处理方法中,在阴极电极的背面设置有至少一个导体板d.c. 可能与阴极电极和对置电极绝缘,并且阴极电极和导体板被屏蔽壁包围,使得由阴极电极和相对电极提供的电极间耦合电容与提供的耦合电容的比率 通过阴极电极和导体板背侧的屏蔽壁的底面不小于预定值。 由此,实现了高质量的高速等离子体处理。