专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5720818A Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck 失效
公开(公告)号：US5720818A
公开(公告)日：1998-02-24
申请号：US639596
申请日：1996-04-26
申请人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
发明人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , C23C16/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T29/49002 , Y10T29/49826 , Y10T29/49885
摘要： The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

2. 发明授权

US6108189A Electrostatic chuck having improved gas conduits 失效
标题翻译：静电吸盘具有改进的气体导管
公开(公告)号：US6108189A
公开(公告)日：2000-08-22
申请号：US965690
申请日：1997-11-06
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , H02N13/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.
摘要翻译：用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。

3. 发明授权

US06721162B2 Electrostatic chuck having composite dielectric layer and method of manufacture 有权
标题翻译：具有复合介电层的静电吸盘及其制造方法
公开(公告)号：US06721162B2
公开(公告)日：2004-04-13
申请号：US10095914
申请日：2002-03-12
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.
摘要翻译：静电吸盘具有能够带电的电极，以静电保持基板。复合层覆盖电极。复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成材料。卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

4. 发明授权

US5904776A Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck 失效
标题翻译：用于将传热流体流动到静电卡盘表面的导管
公开(公告)号：US5904776A
公开(公告)日：1999-05-18
申请号：US924976
申请日：1997-09-08
申请人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
发明人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , C23C16/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T29/49002 , Y10T29/49826 , Y10T29/49885
摘要： The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.
摘要翻译：本发明公开了两种基本结构（包括一种基本结构内的多种变型）以及用于制造促进冷却气体或其它传热流体流向静电卡盘表面的结构的方法。基本结构既解决了RF等离子体环境中的传热气体的分解问题，又涉及这种RF等离子体环境中的半导体基板与静电卡盘的导电基座部分之间的电弧放电的问题。

5. 发明授权

US06414834B1 Dielectric covered electrostatic chuck 有权
标题翻译：介质覆盖静电卡盘
公开(公告)号：US06414834B1
公开(公告)日：2002-07-02
申请号：US09596108
申请日：2000-06-16
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.
摘要翻译：用于将衬底55保持在高密度等离子体中的静电卡盘100包括至少部分被半导体电介质115覆盖的电极110，其中半导体电介质115可具有约5×10 9欧姆到约8×10 10欧姆·厘米的电阻。

6. 发明授权

US06170428B2 Symmetric tunable inductively coupled HDP-CVD reactor 失效
标题翻译：对称可调谐电感耦合HDP-CVD反应堆
公开(公告)号：US06170428B2
公开(公告)日：2001-01-09
申请号：US08679927
申请日：1996-07-15
申请人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
发明人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , C23C16/507 , H01J37/321 , H01J37/32467 , H01J37/32522 , H01J37/32862
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.
摘要翻译：本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

7. 发明授权

US07871469B2 Method for fabricating waveguides 失效
标题翻译：制造波导的方法
公开(公告)号：US07871469B2
公开(公告)日：2011-01-18
申请号：US10867591
申请日：2004-06-14
申请人： Dan Maydan , Arkadii V. Samoilov
发明人： Dan Maydan , Arkadii V. Samoilov
IPC分类号： C30B21/02
CPC分类号： G02B6/132 , G02B2006/12095 , G02B2006/121 , Y10T117/10
摘要： A method of forming a planar waveguide structure, comprising forming a first graded layer on a substrate, wherein the first graded layer comprises a first and a second optical material, wherein the concentration of the first optical material increases with the height of the first graded layer; forming a second graded layer on the first graded layer, the second graded layer comprising the first and second optical materials wherein the concentration of the first optical material decreases with the height of the second graded layer. The method further including forming a uniform layer on the first graded layer, the uniform layer containing first and second optical materials wherein the first optical material concentration is constant.
摘要翻译：一种形成平面波导结构的方法，包括在衬底上形成第一渐变层，其中所述第一渐变层包括第一和第二光学材料，其中所述第一光学材料的浓度随着所述第一渐变层的高度而增加 ; 在所述第一渐变层上形成第二渐变层，所述第二渐变层包括所述第一和第二光学材料，其中所述第一光学材料的浓度随着所述第二渐变层的高度而降低。该方法还包括在第一梯度层上形成均匀的层，所述均匀层包含第一和第二光学材料，其中第一光学材料浓度恒定。

8. 发明申请

US20070080414A1 Optical ready substrates 审中-公开
标题翻译：光学就绪基板
公开(公告)号：US20070080414A1
公开(公告)日：2007-04-12
申请号：US11522856
申请日：2006-09-18
申请人： Claes Bjorkman , Lawrence West , Dan Maydan , Samuel Broydo
发明人： Claes Bjorkman , Lawrence West , Dan Maydan , Samuel Broydo
IPC分类号： H01L31/0232
CPC分类号： G02B6/43 , G02B6/12 , G02B6/12004 , G02B6/30 , G02B6/4204 , G02B6/4214 , G02B6/4245 , G02B6/4257 , G02B6/4274 , G02B6/4283 , H01L21/84 , H01L27/1203
摘要： An article of manufacture comprising an optical-ready substrate made of a first semiconductor layer, an insulating layer on top of the first semiconductor layer, and a second semiconductor layer on top of the insulating layer, wherein the second semiconductor layer has a top surface and is laterally divided into two regions including a first region and a second region, the top surface of the first region being of a quality that is sufficient to permit microelectronic circuitry to be formed therein and the second region including an optical signal distribution circuit formed therein, the optical signal distribution circuit made up of interconnected semiconductor photonic elements and designed to provide signals to the microelectronic circuit to be fabricated in the first region of the second semiconductor layer.
摘要翻译：一种制造方法，包括由第一半导体层制成的光学就绪衬底，在第一半导体层的顶部上的绝缘层和在绝缘层的顶部上的第二半导体层，其中第二半导体层具有顶表面和横向分为包括第一区域和第二区域的两个区域，第一区域的顶表面具有足以允许在其中形成微电子电路的质量，并且第二区域包括其中形成的光信号分配电路，所述光信号分配电路由互连的半导体光子元件组成并且被设计成向要在第二半导体层的第一区域中制造的微电子电路提供信号。

9. 发明授权

US06610354B2 Plasma display panel with a low k dielectric layer 失效
公开(公告)号：US06610354B2
公开(公告)日：2003-08-26
申请号：US09886174
申请日：2001-06-18
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： C23C1640
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

10. 发明授权

US06514850B2 Interface with dielectric layer and method of making 失效
公开(公告)号：US06514850B2
公开(公告)日：2003-02-04
申请号：US09775010
申请日：2001-01-31
申请人： Li-Qun Xia , Huong Thanh Nguyen , Ellie Yieh , Dan Maydan
发明人： Li-Qun Xia , Huong Thanh Nguyen , Ellie Yieh , Dan Maydan
IPC分类号： H01L214763
CPC分类号： H01L21/76829 , H01L21/02115 , H01L21/02126 , H01L21/02167 , H01L21/0217 , H01L21/3105 , H01L21/31116 , H01L21/3144 , H01L21/76801 , H01L21/76807 , H01L21/76826
摘要： Methods of forming an interface in a dielectric material to act as an indicator for terminating an etching process, and products produced thereby.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式