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1. 发明授权

US06465051B1 Method of operating high density plasma CVD reactor with combined inductive and capacitive coupling 失效
标题翻译：操作具有组合电感和电容耦合的高密度等离子体CVD反应堆的方法
公开(公告)号：US06465051B1
公开(公告)日：2002-10-15
申请号：US08751899
申请日：1996-11-18
申请人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
发明人： Turgut Sahin , Fred C. Redeker , Romuald Nowak , Shijian Li , Timothy Dyer , Derek R. Witty
IPC分类号： H05H146
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32082
摘要： The invention is embodied in a method of cleaning a plasma reactor by creating a vacuum in the chamber while introducing an etchant gas into the chamber through the gas injection ports, and applying RF energy to a ceiling electrode in the chamber while not necessarily applying RF energy to the coil antenna, so as to strike a predominantly capacitively coupled plasma in the vacuum chamber. In another embodiment the method includes, whenever the reactor is to be operated in an inductive coupling mode, applying RF power to the reactors coil antenna while grounding the ceiling electrode, and whenever the reactor is to be operated in a capacitive coupling mode, applying RF power to the ceiling electrode, and whenever the reactor is to be cleaned, cleaning the reactor by applying RF power to the ceiling electrode and to the coil antenna while introducing an etchant gas into the vacuum chamber. In yet another embodiment the method includes performing chemical vapor deposition on a wafer by introducing a deposition precursor gas into the chamber while maintaining an inductively coupled plasma therein by applying RF power to the coil antenna while grounding the ceiling electrode, and cleaning the reactor by introducing a precursor cleaning gas into the chamber while maintaining a capacitively coupled plasma in the chamber by applying RF power to the ceiling electrode.
摘要翻译：本发明体现在一种通过在室中产生真空来清洁等离子体反应器的方法，同时通过气体注入口将蚀刻剂气体引入室中，并且将RF能量施加到室中的顶板电极，而不一定施加RF能量到线圈天线，以便在真空室中击穿主要电容耦合的等离子体。在另一个实施例中，该方法包括：每当反应器以电感耦合模式工作时，在将天线电极接地的同时向反应器线圈天线施加RF功率，并且每当反应器以电容耦合模式工作时，施加RF 电源到天花板电极，并且每当要清洁反应堆时，通过向天花板电极和线圈天线施加RF功率来清洁反应器，同时将蚀刻剂气体引入真空室。在另一个实施方案中，该方法包括通过将沉积前体气体引入室中，同时通过在将天线电极接地的同时向线圈天线施加RF功率来维持其中的电感耦合等离子体来执行化学气相沉积，并通过引入来清洁反应器前体清洗气体进入室，同时通过向天花板电极施加RF功率来在室内维持电容耦合的等离子体。

2. 发明授权

US08501568B2 Method of forming flash memory with ultraviolet treatment 失效
标题翻译：用紫外线处理形成闪存的方法
公开(公告)号：US08501568B2
公开(公告)日：2013-08-06
申请号：US12256173
申请日：2008-10-22
申请人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
发明人： Mihaela Balseanu , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
IPC分类号： H01L21/326 , H01L21/8238 , H01L21/3205 , H01L21/4763 , H01L21/00 , H01L29/792
CPC分类号： H01L21/3185 , H01L21/28282 , H01L21/3105 , H01L21/3115 , H01L21/31155 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
摘要翻译：提供了形成闪速存储器件的方法。闪存器件包括在衬底上的二氧化硅层和形成在二氧化硅层上的氮化硅层。氮化硅层的性质可以通过以下任何方式改变：将氮化硅层暴露于紫外线辐射，将氮化硅层暴露于电子束，以及通过等离子体处理氮化硅层。介电材料沉积在氮化硅层上，并且在电介质材料上形成导电日期。具有改进的氮化硅层的闪速存储器件提供了非易失性存储器件的单元电池的电荷保持容量和电荷保持时间的增加。

3. 发明授权

US08084105B2 Method of depositing boron nitride and boron nitride-derived materials 有权
标题翻译：沉积氮化硼和氮化硼衍生材料的方法
公开(公告)号：US08084105B2
公开(公告)日：2011-12-27
申请号：US11765257
申请日：2007-06-19
申请人： Jeong-Uk Huh , Mihaela Balseanu , Li-Qun Xia , Victor T. Nguyen , Derek R. Witty , Hichem M'Saad
发明人： Jeong-Uk Huh , Mihaela Balseanu , Li-Qun Xia , Victor T. Nguyen , Derek R. Witty , Hichem M'Saad
IPC分类号： H05H1/24
CPC分类号： C23C16/342 , C23C16/45523
摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.
摘要翻译：提供了形成含硼膜的方法。所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

4. 发明申请

US20110104400A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20110104400A1
公开(公告)日：2011-05-05
申请号：US12987688
申请日：2011-01-10
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： C23C26/00 , H05H1/24
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

5. 发明申请

US20100096687A1 NON-VOLATILE MEMORY HAVING SILICON NITRIDE CHARGE TRAP LAYER 有权
标题翻译：非易失性存储器，含有硝酸盐电荷捕获层
公开(公告)号：US20100096687A1
公开(公告)日：2010-04-22
申请号：US12255617
申请日：2008-10-21
申请人： Mihaela BALSEANU , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
发明人： Mihaela BALSEANU , Vladimir Zubkov , Li-Qun Xia , Atif Noori , Reza Arghavani , Derek R. Witty , Amir Al-Bayati
IPC分类号： H01L29/78 , H01L21/3205 , H01L21/31
CPC分类号： H01L21/3185 , H01L21/28282 , H01L21/3105 , H01L21/3115 , H01L21/31155 , H01L29/42332 , H01L29/7881 , H01L29/792
摘要： A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
摘要翻译：提供闪速存储器件和形成闪存器件的方法。闪速存储器件包括具有包含碳，硼或氧的掺杂剂的掺杂氮化硅层。掺杂的氮化硅层在该层中产生更高数量和更高浓度的氮和硅悬挂键，并且提供了非易失性存储器件的单元电池的电荷保持容量和电荷保留时间的增加。

6. 发明申请

US20090269923A1 ADHESION AND ELECTROMIGRATION IMPROVEMENT BETWEEN DIELECTRIC AND CONDUCTIVE LAYERS 审中-公开
标题翻译：介电层和导电层之间的粘合和电化学改进
公开(公告)号：US20090269923A1
公开(公告)日：2009-10-29
申请号：US12109533
申请日：2008-04-25
申请人： Sang M. Lee , Yong-Won Lee , Meiyee Shek , Li-Qun Xia , Derek R. Witty
发明人： Sang M. Lee , Yong-Won Lee , Meiyee Shek , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/321
CPC分类号： H01L21/02074 , H01L21/7681 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L21/76849 , H01L21/76856 , H01L21/76867 , H01L21/76883 , H01L21/76886
摘要： A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.
摘要翻译：提供了一种用于处理衬底的方法和设备。处理衬底的方法包括提供包括导电材料的衬底，对导电材料执行预处理工艺，在导电材料上流动硅基化合物以形成硅化物层，对硅化物层进行后处理工艺，并在衬底上沉积阻挡介电层。

7. 发明申请

US20090093132A1 METHODS TO OBTAIN LOW K DIELECTRIC BARRIER WITH SUPERIOR ETCH RESISTIVITY 有权
标题翻译：获得具有超级蚀刻电阻率的低K介电阻挡层的方法
公开(公告)号：US20090093132A1
公开(公告)日：2009-04-09
申请号：US11869416
申请日：2007-10-09
申请人： HUIWEN XU , Yijun Liu , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
发明人： HUIWEN XU , Yijun Liu , Li-Qun Xia , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： H01L21/02205 , C23C16/22 , C23C16/505 , H01L21/02112 , H01L21/02167 , H01L21/0217 , H01L21/02203 , H01L21/02274 , H01L21/3121 , H01L21/3148 , H01L21/3185
摘要： The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.
摘要翻译：本发明通常提供一种形成具有降低的介电常数，改进的蚀刻电阻率和良好的阻挡性能的介电阻挡层的方法。一个实施例提供了一种用于处理半导体衬底的方法，包括将前体流入处理室，其中前体包含硅 - 碳键和碳 - 碳键，并在处理室中产生前体的低密度等离子体以形成电介质在半导体衬底上具有碳 - 碳键的阻挡膜，其中前体中的至少一部分碳 - 碳键保存在低密度等离子体中并且并入介电阻挡膜中。

8. 发明申请

US20080254233A1 PLASMA-INDUCED CHARGE DAMAGE CONTROL FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES 审中-公开
标题翻译：用于等离子体增强化学蒸气沉积过程的等离子体诱导电荷损失控制
公开(公告)号：US20080254233A1
公开(公告)日：2008-10-16
申请号：US11733531
申请日：2007-04-10
申请人： KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
发明人： KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
IPC分类号： C23C14/28
CPC分类号： C23C16/26 , C23C16/52
摘要： Methods of depositing amorphous carbon films on substrates are provided herein. The methods reduce or prevent plasma-induced charge damage to the substrates from the deposition of the amorphous carbon films. In one aspect, an initiation layer of amorphous carbon is deposited at a low RF power level and/or at a low hydrocarbon compound/inert gas flow rate ratio before a bulk layer of amorphous carbon is deposited. After the deposition of the initiation layer, the RF power, hydrocarbon flow rate, and inert gas flow rate may be ramped to final values for the deposition of the bulk layer, wherein the RF power ramp rate is typically greater than the ramp rates of the hydrocarbon compound and of the inert gas. In another aspect, a method of minimizing plasma-induced charge damage includes depositing a seasoning layer on one or more interior surfaces of a chamber before the deposition of the amorphous carbon film on a substrate therein or coating the interior surfaces with an oxide or dielectric layer during manufacturing.
摘要翻译：本文提供了在基片上沉积非晶碳膜的方法。该方法从无定形碳膜的沉积中减少或防止等离子体对基板的电荷损伤。在一个方面，在堆积无定形碳沉积层之前，以低RF功率水平和/或低烃化合物/惰性气体流速比沉积无定形碳的起始层。在起始层的沉积之后，RF功率，烃流速和惰性气体流速可以斜坡化到用于沉积体层的最终值，其中RF功率斜坡率通常大于烃化合物和惰性气体。在另一方面，一种使等离子体感应的电荷损伤最小化的方法包括在将非晶碳膜沉积在基底上之前，在腔室的一个或多个内表面上沉积调味层，或者用氧化物或介电层涂覆内表面在制造过程中。

9. 发明授权

US09984868B2 PEALD of films comprising silicon nitride 有权
公开(公告)号：US09984868B2
公开(公告)日：2018-05-29
申请号：US14211024
申请日：2014-03-14
申请人： Victor Nguyen , Woong Jae Lee , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
发明人： Victor Nguyen , Woong Jae Lee , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/469 , H01L21/02 , C23C16/04 , C23C16/34 , C23C16/455 , C23C16/56
CPC分类号： H01L21/0217 , C23C16/045 , C23C16/345 , C23C16/45542 , C23C16/56 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/0234 , H01L21/02348
摘要： Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

10. 发明授权

US08758638B2 Copper oxide removal techniques 有权
标题翻译：氧化铜去除技术
公开(公告)号：US08758638B2
公开(公告)日：2014-06-24
申请号：US13104314
申请日：2011-05-10
申请人： Weifeng Ye , Victor Nguyen , Mei-Yee Shek , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
发明人： Weifeng Ye , Victor Nguyen , Mei-Yee Shek , Mihaela Balseanu , Li-Qun Xia , Derek R. Witty
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： H01L21/02074 , H01L21/76883
摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.
摘要翻译：提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。

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