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1. 发明授权

US6108189A Electrostatic chuck having improved gas conduits 失效
标题翻译：静电吸盘具有改进的气体导管
公开(公告)号：US6108189A
公开(公告)日：2000-08-22
申请号：US965690
申请日：1997-11-06
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , H02N13/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises a dielectric covered electrode 110 having at least one heat transfer gas flow conduit 150 therein. An electrical isolator 200 comprising dielectric material is positioned in the gas flow conduit 150 to (i) electrically isolate the gas in the conduit from the plasma or electrode 110, and (ii) allow passage of heat transfer gas through the conduit. Preferably, the dielectric material comprises a plasma-deactivating material that has a high surface area that reduces plasma formation of gas passing through the conduit 150 in a plasma process. A semiconducting dielectric member 115 useful for rapidly charging and discharging electrostatic chucks is also described.
摘要翻译：用于将衬底55保持在高密度等离子体中的静电卡盘100包括其中具有至少一个传热气体流动管道150的电介质覆盖电极110。包括电介质材料的电隔离器200定位在气流导管150中以（i）将导管中的气体与等离子体或电极110电隔离，和（ii）允许传热气体通过导管。优选地，电介质材料包括具有高表面积的等离子体钝化材料，其在等离子体工艺中减少通过导管150的气体的等离子体形成。还描述了一种用于快速充放电静电卡盘的半导体电介质部件115。

2. 发明授权

US06721162B2 Electrostatic chuck having composite dielectric layer and method of manufacture 有权
标题翻译：具有复合介电层的静电吸盘及其制造方法
公开(公告)号：US06721162B2
公开(公告)日：2004-04-13
申请号：US10095914
申请日：2002-03-12
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck has an electrode capable of being electrically charged to electrostatically hold a substrate. A composite layer covers the electrode. The composite layer comprises (1) a first dielectric material covering a central portion of the electrode, and (2) a second dielectric material covering a peripheral portion of the electrode, the second dielectric material having a different composition than the composition of the first dielectric material. The chuck is useful in a plasma process chamber to process substrates, such as semiconductor wafers.
摘要翻译：静电吸盘具有能够带电的电极，以静电保持基板。复合层覆盖电极。复合层包括（1）覆盖电极的中心部分的第一电介质材料，和（2）覆盖电极的周边部分的第二电介质材料，第二电介质材料的组成不同于第一电介质的组成材料。卡盘在等离子体处理室中可用于处理诸如半导体晶片的基板。

3. 发明授权

US5904776A Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck 失效
标题翻译：用于将传热流体流动到静电卡盘表面的导管
公开(公告)号：US5904776A
公开(公告)日：1999-05-18
申请号：US924976
申请日：1997-09-08
申请人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
发明人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , C23C16/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T29/49002 , Y10T29/49826 , Y10T29/49885
摘要： The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.
摘要翻译：本发明公开了两种基本结构（包括一种基本结构内的多种变型）以及用于制造促进冷却气体或其它传热流体流向静电卡盘表面的结构的方法。基本结构既解决了RF等离子体环境中的传热气体的分解问题，又涉及这种RF等离子体环境中的半导体基板与静电卡盘的导电基座部分之间的电弧放电的问题。

4. 发明授权

US5720818A Conduits for flow of heat transfer fluid to the surface of an electrostatic chuck 失效
公开(公告)号：US5720818A
公开(公告)日：1998-02-24
申请号：US639596
申请日：1996-04-26
申请人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
发明人： Arik Donde , Dan Maydan , Robert J. Steger , Edwin C. Weldon , Brian Lue , Timothy Dyer
IPC分类号： B23Q3/15 , C23C16/458 , H01L21/683 , C23C16/00
CPC分类号： H01J37/321 , C23C16/4586 , H01L21/6831 , H01L21/6833 , H01J2237/2001 , Y10T29/49002 , Y10T29/49826 , Y10T29/49885
摘要： The present invention discloses a two basic structures (including multiple variations within one of the basic structures) and methods for fabrication of the structures which facilitate the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structures address both the problem of breakdown of a heat transfer gas in an RF plasma environment and the problem of arcing between a semiconductor substrate and the conductive pedestal portion of the electrostatic chuck in such an RF plasma environment.

5. 发明授权

US06414834B1 Dielectric covered electrostatic chuck 有权
标题翻译：介质覆盖静电卡盘
公开(公告)号：US06414834B1
公开(公告)日：2002-07-02
申请号：US09596108
申请日：2000-06-16
申请人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
发明人： Edwin C. Weldon , Kenneth S. Collins , Arik Donde , Brian Lue , Dan Maydan , Robert J. Steger , Timothy Dyer , Ananda H. Kumar , Alexander M. Veytser , Kadthala R. Narendrnath , Semyon L. Kats , Arnold Kholodenko , Shamouil Shamouilian , Dennis S. Grimard
IPC分类号： H02N1300
CPC分类号： H01J37/321 , C23C16/4586 , H01J2237/2001 , H01L21/6831 , H01L21/6833 , Y10T279/23
摘要： An electrostatic chuck 100 useful for holding a substrate 55 in a high density plasma, comprises an electrode 110 at least partially covered by a semiconducting dielectric 115, wherein the semiconducting dielectric 115 may have an electrical resistance of from about 5×109 &OHgr;cm to about 8×1010 &OHgr;cm.
摘要翻译：用于将衬底55保持在高密度等离子体中的静电卡盘100包括至少部分被半导体电介质115覆盖的电极110，其中半导体电介质115可具有约5×10 9欧姆到约8×10 10欧姆·厘米的电阻。

6. 发明授权

US06170428B2 Symmetric tunable inductively coupled HDP-CVD reactor 失效
标题翻译：对称可调谐电感耦合HDP-CVD反应堆
公开(公告)号：US06170428B2
公开(公告)日：2001-01-09
申请号：US08679927
申请日：1996-07-15
申请人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
发明人： Fred C. Redeker , Farhad Moghadam , Hiroji Hanawa , Tetsuya Ishikawa , Dan Maydan , Shijian Li , Brian Lue , Robert J. Steger , Manus Wong , Yaxin Wong , Ashok K. Sinha
IPC分类号： C23C1600
CPC分类号： H01J37/32449 , C23C16/507 , H01J37/321 , H01J37/32467 , H01J37/32522 , H01J37/32862
摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.
摘要翻译：本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

7. 发明授权

US5715132A Method and structure for improving gas breakdown resistance and reducing the potential of arcing in an electrostatic chuck 失效
标题翻译：提高耐气体击穿性，降低静电卡盘电弧的可能性的方法和结构
公开(公告)号：US5715132A
公开(公告)日：1998-02-03
申请号：US623277
申请日：1996-03-28
申请人： Robert J. Steger , Brian Lue
发明人： Robert J. Steger , Brian Lue
IPC分类号： B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： The basic structure facilitates the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck addresses the problem of the RF plasma environment which seeks the interface between the electrostatic chuck dielectric surface layer and its underlying conductive layer, and includes an underlying conductive layer which contains at least one gas flow passageway and at least one dielectric layer overlying said conductive layer. The dielectric layer forms the upper surface of the chuck and contains at least one opening or passageway which connects with the fluid flow passageway in the conductive layer. The distance between the upper surface of the conductive layer and the upper surface of the chuck is greater in the area adjacent to the opening to a fluid flow passageway to the upper surface of the chuck. As a result, the dielectric layer thickness is greater in the area adjacent to the opening or passageway than at other locations on the surface of the chuck. The insulative dielectric structure as the upper surface of the chuck and improve the isolation of the dielectric surface from the underlying conductive layer. Typically, the conductive layer is an aluminum pedestal and the dielectric layer is a spray-applied alumina. Other materials can be used so long as they meet electrical requirements and their relative thermal coefficients of expansion do not create problems in the integrity of the electrostatic chuck after multiple cycles in the intended processing environment.
摘要翻译：基本结构有助于将冷却气体或其它传热流体流向静电卡盘的表面，解决了RF等离子体环境的问题，该等离子体环境寻求静电卡盘电介质表面层与其下面的导电层之间的界面，并且包括下面的导电层，其包含至少一个气体流动通道和覆盖所述导电层的至少一个电介质层。电介质层形成卡盘的上表面并且包含与导电层中的流体流动通道连接的至少一个开口或通道。在与通向卡盘上表面的流体流动通道的开口相邻的区域中，导电层的上表面与卡盘的上表面之间的距离较大。结果，与卡盘表面上的其它位置相比，在开口或通道的邻近区域中介电层的厚度更大。绝缘电介质结构作为卡盘的上表面，并改善电介质表面与底层导电层的隔离。通常，导电层是铝基座，并且电介质层是喷涂氧化铝。可以使用其它材料，只要它们满足电气要求，并且其相对热膨胀系数在预期的处理环境中在多个循环之后不会在静电卡盘的完整性方面产生问题。

8. 发明授权

US5644467A Method and structure for improving gas breakdown resistance and reducing the potential of arcing in a electrostatic chuck 失效
标题翻译：提高耐气体击穿电阻并降低静电卡盘电弧的可能性的方法和结构
公开(公告)号：US5644467A
公开(公告)日：1997-07-01
申请号：US535422
申请日：1995-09-28
申请人： Robert J. Steger , Brian Lue
发明人： Robert J. Steger , Brian Lue
IPC分类号： B23Q3/15 , H01L21/302 , H01L21/3065 , H01L21/683 , H02N13/00
CPC分类号： H01L21/6833
摘要： The present invention discloses a basic structure and a method for fabrication of the structure which facilitates the flow of cooling gas or other heat transfer fluid to the surface of an electrostatic chuck. The basic structure addresses the problem of the rf plasma environment which seeks the interface between the electrostatic chuck dielectric surface layer and its underlying conductive layer. The basic structure includes an underlying conductive layer which contains at least one gas flow passageway and at least one dielectric layer overlying said conductive layer. The dielectric layer forms the upper surface of the dielectric chuck and contains at least one opening or passageway which connects with the fluid flow passageway in the conductive layer. The dielectric layer thickness is greater in the area of the opening or passageway than at other locations on the surface of the dielectric chuck. The basic structure provides an insulative dielectric structure as the upper surface of the electrostatic chuck and improves the isolation of the electrostatic chuck dielectric surface from the underlying conductive layer. Typically, the conductive layer is an aluminum pedestal and the overlaying dielectric layer is a spray-applied alumina. Other materials of construction can be used so long as they meet electrical requirements and their relative thermal coefficients of expansion do not create problems in the integrity of the electrostatic chuck after multiple cycles in the intended processing environment.
摘要翻译：本发明公开了一种用于制造结构的基本结构和方法，其有助于将冷却气体或其它传热流体流动到静电卡盘的表面。基本结构解决了寻求静电卡盘电介质表面层和其下面的导电层之间的界面的等离子体环境的问题。基本结构包括底层导电层，其包含至少一个气体流动通道和覆盖所述导电层的至少一个电介质层。电介质层形成电介质卡盘的上表面并且包含与导电层中的流体流动通道连接的至少一个开口或通道。电介质层的厚度在开口或通道的面积上大于电介质卡盘表面上的其他位置。基本结构提供了作为静电卡盘的上表面的绝缘电介质结构，并改善了静电卡盘电介质表面与下面的导电层的隔离。通常，导电层是铝基座，并且覆盖介电层是喷涂氧化铝。可以使用其他的结构材料，只要它们满足电气要求，并且在预期的处理环境中多个循环之后，它们的相对热膨胀系数不会在静电卡盘的完整性方面产生问题。

9. 发明申请

US20090064928A1 CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE 有权
公开(公告)号：US20090064928A1
公开(公告)日：2009-03-12
申请号：US12254750
申请日：2008-10-20
申请人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lue
发明人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lue
IPC分类号： B05C13/02
CPC分类号： H01L21/67225 , G03B27/32 , G03D13/006 , G03F7/40 , G05B19/41825 , G05B2219/40476 , G05B2219/45031 , G05B2219/49137 , H01L21/67109 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67754 , H01L21/6831 , H01L21/6838 , H01L21/68707 , H01L22/26 , Y02P90/087 , Y10S414/135 , Y10S414/136 , Y10T29/53187 , Y10T29/5323
摘要： Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool. In track lithography type cluster tools, since the chamber processing times tend to be rather short, and the number of processing steps required to complete a typical track system process is large, a significant portion of the time it takes to process a substrate is taken up by the processes of transferring the substrates in a cluster tool between the various processing chambers. In one embodiment of the cluster tool, the cost of ownership, is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more to improve system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. In one aspect of the invention, the substrate processing sequence and cluster tool are designed so that the substrate transferring steps performed during the processing sequence are only made to chambers that will perform the next processing step in the processing sequence. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

10. 发明申请

US20070251456A1 Composite heater and chill plate 审中-公开
标题翻译：复合加热器和冷却板
公开(公告)号：US20070251456A1
公开(公告)日：2007-11-01
申请号：US11414730
申请日：2006-04-27
申请人： Harald Herchen , Sharathchandra Somayaji , Tetsuya Ishikawa , Brian Lue
发明人： Harald Herchen , Sharathchandra Somayaji , Tetsuya Ishikawa , Brian Lue
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： An integrated system for baking and chilling wafers includes a heater for heating a wafer to an elevated temperature, a chiller for cooling the wafer, and a shuttle operatively connected to the heater and the chiller for transferring the wafer between the heater and the chiller. The chiller further includes a low thermal mass wafer support for providing support to a bottom surface of a wafer and a chill plate coupled to the low thermal mass wafer support for cooling the wafer. The low thermal mass wafer support has a higher thermal conductivity in the plane parallel to the bottom surface of the wafer than in the direction perpendicular to the bottom surface of the wafer. The low thermal mass wafer support can further include a plurality of proximity pins for supporting the wafer.
摘要翻译：用于烘烤和冷却晶片的集成系统包括用于将晶片加热到高温的加热器，用于冷却晶片的冷却器和可操作地连接到加热器的梭子和用于在加热器和冷却器之间传送晶片的冷却器。冷却器还包括用于向晶片的底表面提供支撑的低热质量晶片支撑件和耦合到低热质量晶片支撑件以冷却晶片的冷却板。低热质量晶片支架在垂直于晶片底表面的方向上平行于晶片底表面的平面具有较高的热导率。低热质量晶片支撑件还可以包括用于支撑晶片的多个接近销。

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