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1. 发明授权

US06750000B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06750000B2
公开(公告)日：2004-06-15
申请号：US10671666
申请日：2003-09-29
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F700
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

2. 发明授权

US06653052B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06653052B2
公开(公告)日：2003-11-25
申请号：US09810194
申请日：2001-03-19
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F750
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

3. 发明授权

US06927002B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

4. 发明授权

US06703171B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06703171B2
公开(公告)日：2004-03-09
申请号：US10072880
申请日：2002-02-12
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

5. 发明授权

US5328807A Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US5328807A
公开(公告)日：1994-07-12
申请号：US711954
申请日：1991-06-07
申请人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
发明人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
IPC分类号： G03F1/34 , G03F7/20 , G03C5/00 , G03F9/00
CPC分类号： G03F1/34 , G03F7/2022
摘要： A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.
摘要翻译：将梳状或点状移相器图案添加到用于相移掩模技术的移相器中，然后将其暴露在晶片上。这使得能够同时形成彼此宽度不同的极细线图案或空间图案。此外，当两个掩模版被布置成使得设置在其中的移相器图案彼此相交并且连续地暴露在晶片上时，可以在移相器图案彼此相交的位置处形成细孔图案或点图案。

6. 发明授权

US4835089A Resist pattern forming process with dry etching 失效
标题翻译：干蚀刻抗蚀图案成型工艺
公开(公告)号：US4835089A
公开(公告)日：1989-05-30
申请号：US60323
申请日：1987-06-10
申请人： Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
发明人： Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
IPC分类号： G03F7/095
CPC分类号： G03F7/095
摘要： A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.
摘要翻译：在其表面上具有表层水平的基底上形成含有芳族双叠氮化物和/或芳族磺酰基叠氮化合物的厚聚合物膜，以使所述表面变平，然后加热或将其整个表面曝光。在聚合物膜上形成具有高于聚合物的耐干蚀刻性的掩模图案，通过干蚀刻除去聚合物膜的暴露部分，并除去待处理的膜的暴露部分以形成图案。

7. 发明授权

US5324550A Pattern forming method 失效
标题翻译：图案形成方法
公开(公告)号：US5324550A
公开(公告)日：1994-06-28
申请号：US929196
申请日：1992-08-12
申请人： Hidenori Yamaguchi , Fumio Murai , Norio Hasegawa , Toshio Sakamizu , Hiroshi Shiraishi
发明人： Hidenori Yamaguchi , Fumio Murai , Norio Hasegawa , Toshio Sakamizu , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F7/022 , G03F7/09 , G03F7/11 , B05D3/06 , G03C5/00 , G03C5/18 , G03C5/26
CPC分类号： G03F7/11 , G03F7/09 , G03F7/0045 , G03F7/022
摘要： In forming a resist pattern by forming a resist film containing an acid generator on a spin on glass film or a silicon resin film and subsequent exposure of light, an inhomogeneous distribution of an acid in the resist film caused by the spin on glass film or the silicon resin film is remedied by adding an acid generator beforehand into the spin on glass film or the silicon resin film or by using an organic polymer containing an acid generator. As a result, a profile defect in a cross section of the resist pattern caused by inhomogeneous acid distribution is prevented and the resist pattern has a rectangular cross-sectional shape.
摘要翻译：在通过在玻璃膜或硅树脂膜上的自旋上形成含有酸发生剂的抗蚀剂膜并随后曝光的方式形成抗蚀剂图案时，由于在玻璃膜上旋转引起的抗蚀剂膜中的酸不均匀分布通过预先将酸产生剂添加到玻璃膜或硅树脂膜上的旋涂中或通过使用含有酸发生剂的有机聚合物来补救硅树脂膜。结果，防止由不均匀的酸分布引起的抗蚀剂图案的横截面中的轮廓缺陷，并且抗蚀剂图案具有矩形横截面形状。

8. 发明申请

US20140308685A1 ANTIBODY CAPABLE OF BINDING TO SPECIFIC REGION OF PERIOSTIN, AND METHOD FOR MEASURING PERIOSTIN USING SAME 有权
标题翻译：能够结合周期蛋白的特定区域的抗体以及使用其测量周期蛋白的方法
公开(公告)号：US20140308685A1
公开(公告)日：2014-10-16
申请号：US14342996
申请日：2012-09-06
申请人： Kenji Izuhara , Shoichiro Ohta , Kazuhiko Arima , Hiroshi Shiraishi , Shoichi Suzuki , Tomoaki Hoshino , Yoshinori Azuma , Junya Ono
发明人： Kenji Izuhara , Shoichiro Ohta , Kazuhiko Arima , Hiroshi Shiraishi , Shoichi Suzuki , Tomoaki Hoshino , Yoshinori Azuma , Junya Ono
IPC分类号： G01N33/68 , C07K16/18
CPC分类号： G01N33/6893 , C07K16/18 , C07K2317/14 , C07K2317/33 , G01N2333/47 , G01N2800/12
摘要： The present invention provides a method and a reagent for measuring periostin contained in a sample with improved accuracy, a method for improving accuracy in measurement of periostin, and a method of testing for pulmonary fibrosis or interstitial pneumonia with improved accuracy. The antibody of the present invention binds to at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin or a cleavage product thereof. The method and the reagent for measuring periostin and the method for improving accuracy in periostin measurement of the present invention is characterized by detecting at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin. The method of testing for pulmonary fibrosis or interstitial pneumonia of the present invention includes the steps of a) measuring the amount or concentration of periostin in a sample derived from a subject, which measuring includes detecting at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin and b) comparing the amount or concentration of the periostin in the sample derived from the subject with an amount or concentration of periostin in a sample derived from a living body not suffering from pulmonary fibrosis and interstitial pneumonia.
摘要翻译：本发明提供了一种精度更高的用于测定样品中的骨膜素的方法和试剂，提高骨膜素测定精度的方法以及以更高的精度测定肺纤维化或间质性肺炎的方法。本发明的抗体与选自由EMI区域，R1区域，R2区域和骨膜素的R3区域或其切割产物组成的组中的至少一个区域结合。用于测定骨膜素的方法和试剂以及本发明的骨膜素测定精度的提高方法的特征在于，检测从由EMI区域，R1区域，R2区域和R3组成的组中选择的至少一个区域骨膜素的区域本发明的肺纤维化或间质性肺炎的检测方法包括以下步骤：a）测量衍生自受试者的样品中骨膜素的量或浓度，所述测量包括检测至少一个选自以下的区域： EMI区域，R1区域，R2区域和骨膜素的R3区域，以及b）将源自受试者的样品中骨膜素的量或浓度与衍生自活体的样品中骨膜素的量或浓度进行比较不患肺纤维化和间质性肺炎。

9. 发明授权

US07659747B2 Transmission device 有权
标题翻译：传输设备
公开(公告)号：US07659747B2
公开(公告)日：2010-02-09
申请号：US12178219
申请日：2008-07-23
申请人： Hiroshi Shiraishi , Tetsuya Hayashi , Tomokazu Higuchi
发明人： Hiroshi Shiraishi , Tetsuya Hayashi , Tomokazu Higuchi
IPC分类号： H03K19/094
CPC分类号： H03K19/00384
摘要： A transmission device including: a driver unit which generates an output signal having an amplitude by a resistance division of a power-supply voltage; and an output-amplitude correction unit which generates current according to variation in the power-supply voltage, and corrects the amplitude by using the current.
摘要翻译：一种传输装置，包括：驱动器单元，其通过电源电压的电阻划分产生具有振幅的输出信号; 以及输出幅度校正单元，其根据电源电压的变化产生电流，并且通过使用电流来校正振幅。

10. 发明申请

US20050008976A1 Method of manufacturing an electronic device 审中-公开
标题翻译：制造电子装置的方法
公开(公告)号：US20050008976A1
公开(公告)日：2005-01-13
申请号：US10869892
申请日：2004-06-18
申请人： Toshio Sakamizu , Hiroshi Fukuda , Hiroshi Shiraishi
发明人： Toshio Sakamizu , Hiroshi Fukuda , Hiroshi Shiraishi
IPC分类号： G03F7/032 , B08B3/00 , G03C5/00 , G03F7/004 , G03F7/32 , H01L21/027 , H01L21/32 , H01L21/3213
CPC分类号： H01L21/0273 , G03F7/0046 , G03F7/325 , H01L21/32 , H01L21/32139
摘要： To form a fine resist pattern without collapse, the invention patterns a resist by applying a resist composition to a substrate to form a resist film, exposing the resist film to radiation in a desired pattern, and developing the exposed resist film using supercritical carbon dioxide at 200 atm or lower. The resist composition mainly includes a polymer having a solubility parameter equal to or lower than that of supercritical carbon dioxide.
摘要翻译：为了形成没有崩溃的精细抗蚀剂图案，本发明通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜来形成抗蚀剂，将抗蚀剂膜暴露于所需图案的辐射，并且使用超临界二氧化碳显影曝光的抗蚀剂膜 200 atm以下。抗蚀剂组合物主要包括溶解度参数等于或低于超临界二氧化碳的聚合物。

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