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1. 发明授权

US11815801B2 Reflective type blankmask and photomask for EUV 有权
公开(公告)号：US11815801B2
公开(公告)日：2023-11-14
申请号：US17144416
申请日：2021-01-08
申请人： S&S TECH Co., Ltd.
发明人： Cheol Shin , Jong-Hwa Lee , Chul-Kyu Yang , Gil-Woo Kong
IPC分类号： G03F1/24 , G03F1/58 , G03F1/40 , H01L21/033
CPC分类号： G03F1/24 , G03F1/40 , G03F1/58 , H01L21/0332 , H01L21/0337
摘要： Disclosed is a blankmask for EUV includes a substrate, a reflection film that is stacked on the substrate; and an absorbing film that is stacked on the reflection film. The absorbing film is constituted by an uppermost layer and a plurality of layers under the uppermost layer. The uppermost layer contains Ta and O. The plurality of layers contain Ta and are configured so that a content of N increases upward. As a result, a CD deviation of a pattern of the absorbing film is minimized.

2. 发明授权

US11703763B2 Method of lithography process using reticle container with discharging device 有权
公开(公告)号：US11703763B2
公开(公告)日：2023-07-18
申请号：US17733616
申请日：2022-04-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Hsiao-Lun Chang , Chueh-Chi Kuo , Tsung-Yen Lee , Tzung-Chi Fu , Li-Jui Chen , Po-Chung Cheng , Che-Chang Hsu
IPC分类号： G03F7/20 , G03F1/66 , G03F1/40 , G03F1/24 , G03F1/38
CPC分类号： G03F7/2002 , G03F1/40 , G03F1/66 , G03F1/24 , G03F1/38
摘要： A reticle, a reticle container and a method of lithography process are provided. The reticle container includes: a cover configured to protect a reticle, a baseplate, and a discharging device on the baseplate. The baseplate has: a top surface configured to engage to the cover and a bottom surface opposite to the top surface. The discharging device is configured to neutralize static charges accumulated on the reticle.

3. 发明申请

US20220260901A1 METHOD OF LITHOGRAPHY PROCESS USING RETICLE CONTAINER WITH DISCHARGING DEVICE 有权
公开(公告)号：US20220260901A1
公开(公告)日：2022-08-18
申请号：US17733616
申请日：2022-04-29
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Hsiao-Lun CHANG , Chueh-Chi KUO , Tsung-Yen LEE , Tzung-Chi FU , Li-Jui CHEN , Po-Chung CHENG , Che-Chang HSU
IPC分类号： G03F1/40 , G03F1/66
摘要： A reticle, a reticle container and a method of lithography process are provided. The reticle container includes: a cover configured to protect a reticle, a baseplate, and a discharging device on the baseplate. The baseplate has: a top surface configured to engage to the cover and a bottom surface opposite to the top surface. The discharging device is configured to neutralize static charges accumulated on the reticle.

4. 发明申请

US20210373434A1 TRANSPORT COMPLEX AND TRANSPORT MODULE INCLUDING THE SAME 有权
公开(公告)号：US20210373434A1
公开(公告)日：2021-12-02
申请号：US17188457
申请日：2021-03-01
申请人： Samsung Display Co., LTD.
发明人： SUKBIN JUNG , Sung Jin Na
IPC分类号： G03F1/40 , G03F1/48
摘要： Transport complexes and transport modules including the same. The transport complex comprises a metal stick having one surface and other surface that are spaced apart from each other in one direction, a first protection sheet adjacent to the one surface, and a second protection sheet adjacent to the other surface. In wavelength ranges of about 380 nm to about 800 nm, each of the first and second protection sheets has transmittance of about 0% to about 50% and absorptance of less than about 95%.

5. 发明授权

US10488757B2 Conductive composition, antistatic film, laminate and production therefor, and production method for photomask 有权
公开(公告)号：US10488757B2
公开(公告)日：2019-11-26
申请号：US15309973
申请日：2015-05-13
申请人： Mitsubishi Chemical Corporation
发明人： Akira Yamazaki , Masashi Uzawa , Hiroya Fukuda
IPC分类号： G03F7/09 , G03F1/76 , G03F1/40 , G03F1/80 , G03F7/038 , G03F7/039 , G03F7/16 , G03F7/20 , C08K5/3432 , C08G73/00 , C08L101/06 , C08L101/14 , C08L29/04 , C08L79/02 , G03F7/32 , B32B27/18 , C08L79/00 , H01B1/12
CPC分类号： G03F7/093 , B32B27/18 , C08G73/00 , C08K5/3432 , C08L29/04 , C08L79/00 , C08L79/02 , C08L101/06 , C08L101/14 , G03F1/40 , G03F1/76 , G03F1/80 , G03F7/038 , G03F7/039 , G03F7/094 , G03F7/16 , G03F7/2037 , G03F7/2039 , G03F7/2063 , G03F7/322 , G03F7/325 , H01B1/12
摘要： This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

6. 发明授权

US10481483B2 Lithography mask and method 有权
公开(公告)号：US10481483B2
公开(公告)日：2019-11-19
申请号：US15816393
申请日：2017-11-17
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Shiang-Bau Wang , Syun-Ming Jang
IPC分类号： G03F1/24 , H01L21/027 , G03F1/46 , G03F7/20 , G03F1/76 , G03F1/80 , G03F1/52 , G03F1/40 , G03F1/42
摘要： In an embodiment, a photomask includes: a substrate over a first conductive layer, the substrate formed of a low thermal expansion material (LTEM); a second conductive layer over the first conductive layer; a reflective film stack over the substrate; a capping layer over the reflective film stack; an absorption layer over the capping layer; and an antireflection (ARC) layer over the absorption layer, where the ARC layer and the absorption layer have a plurality of openings in a first region exposing the capping layer, where the ARC layer, the absorption layer, the capping layer, and the reflective film stack have a trench in a second region exposing the second conductive layer.

7. 发明申请

US20180164676A1 ANTI-ESD PHOTOMASK AND METHOD OF FORMING THE SAME 审中-公开
公开(公告)号：US20180164676A1
公开(公告)日：2018-06-14
申请号：US15419338
申请日：2017-01-30
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
发明人： Chun-Hung Kung , Hao-Zhang Lai
IPC分类号： G03F1/40 , H05F1/02
CPC分类号： G03F1/40 , H05F1/02
摘要： The present disclosure provides an anti-ESD photomask and method of the same. In the method, a substrate is provided first. Then, a light-shielding layer is formed on a portion of the substrate, in which the light-shielding layer includes a Mo-containing layer. Next, a surface treatment operation is performed to convert a surface of the portion of the substrate and a surface of the light-shielding layer into a non-conductive layer.

8. 发明授权

US08772737B2 Conductive element for electrically coupling an EUVL mask to a supporting chuck 有权
标题翻译：用于将EUVL掩模电耦合到支撑卡盘的导电元件
公开(公告)号：US08772737B2
公开(公告)日：2014-07-08
申请号：US13623804
申请日：2012-09-20
申请人： Applied Materials Israel, Ltd.
发明人： Igor Krivts (Krayvitz) , Israel Avneri , Yoram Uziel , Nir Ben-David Dodzin , Ido Holcman , Itzak Yair , Yosi Basson
IPC分类号： H01J37/20 , H01L21/683 , G03F1/14 , G03F1/40 , G03F1/22
CPC分类号： H01J37/20 , F16B17/00 , G01N23/18 , G03F1/22 , G03F1/40 , H01J2237/0044 , H01J2237/20 , H01J2237/2008 , H01L21/6831 , Y10T279/23 , Y10T403/70
摘要： A coupling module may include an upper portion that defines an aperture, mask contact elements, chuck contact elements and an intermediate element that is connected between the mask contact elements and the upper portion. A shape and a size of the aperture may correspond to a shape and size of a pattern transfer area of an extreme ultra violet (EUVL) mask. The coupling module may be shaped and sized so that once the mask contact elements contact the upper portion of the EUVL mask, the chuck contact elements contact a chuck that supports the mask. The coupling module may further provide at least one conductive path between the upper portion of the EUVL mask and the chuck when the EUVL mask is positioned on the chuck.
摘要翻译：耦合模块可以包括限定孔的上部，掩模接触元件，卡盘接触元件和连接在掩模接触元件和上部之间的中间元件。孔径的形状和尺寸可以对应于极紫外（EUVL）掩模的图案转移区域的形状和尺寸。耦合模块的形状和尺寸可以使得一旦掩模接触元件接触EUVL掩模的上部，卡盘接触元件就接触支撑掩模的卡盘。当EUVL掩模位于卡盘上时，耦合模块还可以在EUVL掩模的上部和卡盘之间提供至少一个导电路径。

9. 发明授权

US08383301B2 Methods of fabricating reticles with subdivided blocking regions 有权
标题翻译：制造具有细分阻挡区域的掩模版的方法
公开(公告)号：US08383301B2
公开(公告)日：2013-02-26
申请号：US13305987
申请日：2011-11-29
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00 , G03F1/40
CPC分类号： G03F1/00 , G03F1/32 , G03F1/40
摘要： Methods for designing, fabricating, and using attenuated phase shift reticles, or photomasks are disclosed. Methods are also disclosed for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs. The methods may include forming radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The methods may include configuring the reticle to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region.
摘要翻译：公开了设计，制造和使用衰减相移掩模版或光掩模的方法。还公开了用于细分先前存在的设计的先前制造的掩模版的辐射阻挡区域的方法。所述方法可以包括将辐射阻挡区域形成为通过切割线细分成具有尺寸（例如，表面积等）的离散且间隔开的部分，其被配置成最小化或消除由辐射阻挡区域产生的静电能量和/ 或者从辐射阻挡区域放出静电能和由这种静电放电引起的损坏。所述方法可以包括配置掩模版以防止辐射穿过细分辐射阻挡区域的相邻部分之间的切割线。

10. 发明授权

US5677092A Process for fabricating phase shift mask and process of semiconductor integrated circuit device 失效
标题翻译：制造相移掩模和半导体集成电路器件的工艺
公开(公告)号：US5677092A
公开(公告)日：1997-10-14
申请号：US383839
申请日：1995-02-06
申请人： Toshitsugu Takekuma , Haruo Ii , Kazuya Ito
发明人： Toshitsugu Takekuma , Haruo Ii , Kazuya Ito
IPC分类号： G03F1/26 , G03F1/30 , G03F1/36 , G03F1/40 , G03F1/68 , G03F1/70 , G03F1/80 , G06F17/50 , H01L21/027 , G03F7/00
CPC分类号： G03F1/30 , G03F1/26 , Y10S430/143
摘要： When the data of a mask pattern of a phase shift mask is to be made, the pattern data is separated into a real pattern data layer having the data of real patterns and a phase shift pattern data layer having the data of phase shift patterns. After this, it is verified whether or not the mask pattern satisfies the regulation of the gap of in-phase patterns, in which lights having transmitted through patterns adjacent to each other are in phase. It is also verified whether or not the mask pattern satisfies the regulation of the gap of out-of-phase patterns, in which lights having transmitted through patterns adjacent to each other are out of phase.
摘要翻译：当要进行相移掩模的掩模图案的数据时，将图案数据分离成具有实数图案的实际图案数据层和具有相移图案的数据的相移图案数据层。此后，验证掩模图案是否满足彼此相邻的透过图案的光同相的同相图案的间隙的调节。还验证了掩模图案是否满足彼此相邻的具有透射图案的光异相的异相图案的间隙的调节。

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