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1. 发明授权

US06653052B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06653052B2
公开(公告)日：2003-11-25
申请号：US09810194
申请日：2001-03-19
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F750
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

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