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1. 发明授权

US06703171B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06703171B2
公开(公告)日：2004-03-09
申请号：US10072880
申请日：2002-02-12
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F900
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

2. 发明授权

US06927002B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

3. 发明授权

US06750000B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06750000B2
公开(公告)日：2004-06-15
申请号：US10671666
申请日：2003-09-29
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F700
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

4. 发明授权

US06653052B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06653052B2
公开(公告)日：2003-11-25
申请号：US09810194
申请日：2001-03-19
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F750
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

5. 发明授权

US5328807A Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US5328807A
公开(公告)日：1994-07-12
申请号：US711954
申请日：1991-06-07
申请人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
发明人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
IPC分类号： G03F1/34 , G03F7/20 , G03C5/00 , G03F9/00
CPC分类号： G03F1/34 , G03F7/2022
摘要： A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.
摘要翻译：将梳状或点状移相器图案添加到用于相移掩模技术的移相器中，然后将其暴露在晶片上。这使得能够同时形成彼此宽度不同的极细线图案或空间图案。此外，当两个掩模版被布置成使得设置在其中的移相器图案彼此相交并且连续地暴露在晶片上时，可以在移相器图案彼此相交的位置处形成细孔图案或点图案。

6. 发明授权

US4835089A Resist pattern forming process with dry etching 失效
标题翻译：干蚀刻抗蚀图案成型工艺
公开(公告)号：US4835089A
公开(公告)日：1989-05-30
申请号：US60323
申请日：1987-06-10
申请人： Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
发明人： Takao Iwayanagi , Norio Hasegawa , Toshihiko Tanaka , Hiroshi Shiraishi , Takumi Ueno , Michiaki Hashimoto , Seiichiro Shirai , Kazuya Kadota
IPC分类号： G03F7/095
CPC分类号： G03F7/095
摘要： A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.
摘要翻译：在其表面上具有表层水平的基底上形成含有芳族双叠氮化物和/或芳族磺酰基叠氮化合物的厚聚合物膜，以使所述表面变平，然后加热或将其整个表面曝光。在聚合物膜上形成具有高于聚合物的耐干蚀刻性的掩模图案，通过干蚀刻除去聚合物膜的暴露部分，并除去待处理的膜的暴露部分以形成图案。

7. 发明授权

US07005216B2 Photo mask 有权
标题翻译：照片面具
公开(公告)号：US07005216B2
公开(公告)日：2006-02-28
申请号：US10299692
申请日：2002-11-20
申请人： Hiroshi Shiraishi , Sonoko Migitaka , Takashi Hattori , Tadashi Arai , Toshio Sakamizu
发明人： Hiroshi Shiraishi , Sonoko Migitaka , Takashi Hattori , Tadashi Arai , Toshio Sakamizu
IPC分类号： G03F9/00
CPC分类号： G03F1/56
摘要： Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.
摘要翻译：提供KrF准分子激光光刻的光掩模，可以在较小数量的步骤中以高精度和低缺陷生产。根据本发明的用于KrF准分子激光光刻的光掩模是其中直接在石英衬底10上形成有效吸收KrF准分子激光（波长：约248nm）的抗蚀剂图案18的光掩模。抗蚀剂图案18包括：具有高遮光性的碱性水溶性树脂，其包含具有至少一个与萘核结合的羟基的萘酚结构; 或具有作为主要成分的含有上述碱溶性水溶性树脂的衍生物的碱溶性树脂作为树脂基质的辐射敏感性抗蚀剂。

8. 发明授权

US6156486A Method for pattern formation and process for preparing semiconductor device 有权
标题翻译：图案形成方法和制备半导体器件的方法
公开(公告)号：US6156486A
公开(公告)日：2000-12-05
申请号：US432797
申请日：1999-11-03
申请人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
发明人： Takashi Hattori , Yuko Tsuchiya , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F7/038 , G03F7/00
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
摘要翻译：在包括ArF准分子激光器的波长193nm的远紫外区域中形成阴图案，尽管其化学结构具有高干蚀刻，但不膨胀并具有优异的分辨率。使用酸催化的反应，其中γ-羟基或δ-羟基羧酸结构部分或全部转化为γ-内酯或δ-内酯结构。阴性图案用碱性水溶液显影而没有溶胀。

9. 发明申请

US20060105273A1 Method for producing electronic device 有权
标题翻译：电子装置的制造方法
公开(公告)号：US20060105273A1
公开(公告)日：2006-05-18
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： G03C5/00
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译：存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致器件性能劣化，从而对系统性能产生不良影响。本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大，使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。

10. 发明授权

US07642145B2 Method for producing electronic device 有权
标题翻译：电子装置的制造方法
公开(公告)号：US07642145B2
公开(公告)日：2010-01-05
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： H01L21/8238
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译：存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致的器件性能劣化，从而对系统性能产生不良影响。本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大，使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。

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