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1. 发明授权

US09465296B2 Nanopatterning method and apparatus 有权
标题翻译：纳米图案化方法和装置
公开(公告)号：US09465296B2
公开(公告)日：2016-10-11
申请号：US13546436
申请日：2012-07-11
申请人： Boris Kobrin
发明人： Boris Kobrin
IPC分类号： G03F7/24 , G03F7/20 , G03F1/34 , G03F1/00 , G03F7/00 , G03F1/50 , G03F1/60 , B82Y40/00
CPC分类号： G03F7/2035 , B82Y40/00 , G03F1/0007 , G03F1/0084 , G03F1/34 , G03F1/50 , G03F1/60 , G03F7/0012 , G03F7/2014 , G03F7/2032
摘要： Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a movable nanostructured film is used to image a radiation-sensitive material. The nanopatterning technique makes use of Near-Field photolithography, where the nanostructured film used to modulate light intensity reaching radiation-sensitive layer. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a movable film comprises metal nano holes or nanoparticles.
摘要翻译：本发明的实施例涉及在大面积基板的纳米图案中有用的方法和装置，其中使用可移动的纳米结构膜来对辐射敏感材料成像。纳米图案技术利用近场光刻技术，其中纳米结构膜用于调制到达辐射敏感层的光强度。近场光刻可以使用弹性体相移掩模，或者可以采用表面等离子体激元技术，其中可移动膜包括金属纳米孔或纳米颗粒。

2. 发明申请

US20150309417A1 EXPOSURE APPARATUS 审中-公开
标题翻译：曝光装置
公开(公告)号：US20150309417A1
公开(公告)日：2015-10-29
申请号：US14647389
申请日：2014-08-01
申请人： LG CHEM, LTD.
发明人： Jeong Ho PARK , Bu Gon SHIN , Jae Jin KIM , Jong Byung LEE
IPC分类号： G03F7/20
CPC分类号： G03F7/70058 , G03F1/00 , G03F1/34 , G03F1/50 , G03F1/60 , G03F7/20 , G03F7/24 , G03F7/703 , G03F7/7035
摘要： Provided are a photomask, an exposure apparatus and a method. A fine pattern having a submicrometer size can be easily formed on a cylindrical mold, and the cylindrical mold having the pattern formed therein can be easily applied to an automation process, such as a roll-to-roll process. Also, the fine pattern can be formed in a large scale having various sizes by using a mask formed of a flexible material, and patterns having different shapes can be divided or independently formed on a curved surface of the cylindrical mold so that a degree of freedom of a process can be improved.
摘要翻译：提供光掩模，曝光装置和方法。具有亚微米尺寸的精细图案可以容易地形成在圆柱形模具上，并且其中形成有图案的圆柱形模具可以容易地应用于诸如卷对卷过程的自动化过程。此外，通过使用由柔性材料形成的掩模，可以以各种尺寸形成精细图案，并且可以在圆柱形模具的曲面上分割或独立地形成具有不同形状的图案，使得自由度的过程可以改进。

3. 发明授权

US08603706B2 Forming a bridging feature using chromeless phase-shift lithography 有权
标题翻译：使用无色相移光刻形成桥接特征
公开(公告)号：US08603706B2
公开(公告)日：2013-12-10
申请号：US13269086
申请日：2011-10-07
申请人： Daniel B. Sullivan , Sangho Kim
发明人： Daniel B. Sullivan , Sangho Kim
IPC分类号： G03F1/34 , G03F1/44
CPC分类号： G03F1/34 , B82Y40/00 , G03F1/00
摘要： First and second anchor features are formed on a substrate via a chromeless photolithography process. An elongated bridging feature is formed between the anchor features on the substrate via the chromeless photolithography process. A distance between the anchor features is sufficient to minimize lateral displacement at a center portion of the bridging feature without significant reduction in mechanical stability of the bridging feature.
摘要翻译：第一和第二锚定特征通过无色光刻工艺形成在衬底上。通过无色光刻工艺在衬底上的锚定特征之间形成细长的桥接特征。锚定特征之间的距离足以使桥接特征的中心部分处的横向移动最小化，而桥接特征的机械稳定性不会明显降低。

4. 发明申请

US20130309602A1 OPTICALLY SEMITRANSMISSIVE FILM, PHOTOMASK BLANK AND PHOTOMASK, AND METHOD FOR DESIGNING OPTICALLY SEMITRANSMISSIVE FILM 有权
标题翻译：光学SEMITRANSMISSIC FILM，PHOTOMASK BLANK和PHOTOMASK，以及设计光学透射电影的方法
公开(公告)号：US20130309602A1
公开(公告)日：2013-11-21
申请号：US13917338
申请日：2013-06-13
申请人： HOYA CORPORATION
发明人： Yuki SHIOTA , Osamu NOZAWA
IPC分类号： G03F1/26
CPC分类号： G03F1/26 , G03F1/32 , G03F1/34 , G03F1/54
摘要： A photomask blank includes a transparent substrate and a film containing at least two layers formed on the transparent substrate, the two layers being a first layer with a phase difference Δθ1 and a second layer with a phase difference Δθ2. The phase difference Δθ1 is a phase difference between a light transmitted through the first layer and a light transmitted through an air distance equal to a thickness of the first layer, and the phase difference Δθ2 is a phase difference between a light transmitted through the second layer and a light transmitted through an air distance equal to a thickness of the second layer. A phase difference of the film containing at least two layers is from −30° to +30°. The first layer contains a material not to be etched during etching of the transparent substrate.
摘要翻译：光掩模坯料包括透明基板和在透明基板上形成有至少两层的膜，两层是具有相位差Deltatheta1的第一层和具有相位差Deltatheta2的第二层。相位差Deltatheta1是透过第一层的光和透过等于第一层的厚度的空气距离的光之间的相位差，相位差Deltatheta2是透过第二层的光之间的相位差透过空气距离等于第二层厚度的光。含有至少两层的膜的相位差为-30°〜+ 30°。第一层包含在蚀刻透明衬底期间不被蚀刻的材料。

5. 发明授权

US08389183B2 Chromeless phase-shifting photomask with undercut rim-shifting element 有权
标题翻译：无铬相移光掩模与底切轮辋移动元件
公开(公告)号：US08389183B2
公开(公告)日：2013-03-05
申请号：US12702787
申请日：2010-02-09
申请人： Brent A. Anderson , Jed H. Rankin
发明人： Brent A. Anderson , Jed H. Rankin
IPC分类号： G03F1/28 , G03F1/29 , G03F1/34
CPC分类号： G03F1/29 , G03F1/34
摘要： A phase-shifting photomask with a self aligned undercut rim-shifting element and methods for its manufacture are provided. One embodiment of the invention provides a method of manufacturing a phase-shifting photomask having a self aligned rim-shifting element, the method comprising: applying a patterning film to a first portion of a transparent substrate; etching the substrate to a depth to remove a second portion of the substrate not beneath the patterning film; etching the first portion of the substrate to undercut an area beneath the patterning film; and removing the patterning film, wherein the etched substrate forms a self-aligned undercut rim-shifting element.
摘要翻译：提供了具有自对准底切边缘移动元件的相移光掩模及其制造方法。本发明的一个实施例提供了一种制造具有自对准边缘移位元件的相移光掩模的方法，所述方法包括：将图案化膜施加到透明基板的第一部分; 将衬底蚀刻到深度以去除衬底的第二部分而不在图案化膜下方; 蚀刻基板的第一部分以削去图案化膜下方的区域; 并且去除所述图案化膜，其中所述蚀刻的衬底形成自对准底切轮辋移位元件。

6. 发明授权

US08323857B2 Phase-shift mask with assist phase regions 有权
标题翻译：具有辅助相位区域的相移掩模
公开(公告)号：US08323857B2
公开(公告)日：2012-12-04
申请号：US13066804
申请日：2011-04-25
申请人： Robert L. Hsieh , Warren W. Flack
发明人： Robert L. Hsieh , Warren W. Flack
IPC分类号： G03F1/36
CPC分类号： G03F1/34 , H01L33/22
摘要： A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed.
摘要翻译：具有棋盘阵列和周围的子分辨率辅助相位图案的相移掩模。棋盘阵列包括具有180度的相对相位差的交替相移区域R. 副分辨率辅助相位区域R'与相应的相移区域R相邻并且具有180度的相对相位差。辅助分辨率辅助相位区域R'被配置为当光刻形成光致抗蚀剂特征时减轻不期望的边缘效应。还公开了使用相移掩模形成LED的方法。

7. 发明授权

US08273506B2 Method of manufacturing optical element, and optical element 有权
标题翻译：制造光学元件和光学元件的方法
公开(公告)号：US08273506B2
公开(公告)日：2012-09-25
申请号：US12718655
申请日：2010-03-05
申请人： Kazuhide Yamashiro , Hideki Suda
发明人： Kazuhide Yamashiro , Hideki Suda
IPC分类号： G03F1/30
CPC分类号： G03F1/34
摘要： A manufacturing method of an optical element is provided, the optical element comprising: a shield part formed by a light shielding film formed and patterned on a substrate; a light transmission part formed by partially exposing a surface of the substrate; and a phase shifter part formed by partially etching the surface of the substrate, the method comprising the steps of: preparing an optical element blank with the light shielding film and a first resist film laminated on the substrate in this order; and forming a first resist pattern by applying drawing and development to the first resist film, covering a formation scheduled area of the shield part, and demarcating the formation scheduled area of the phase shifter part.
摘要翻译：提供一种光学元件的制造方法，所述光学元件包括：由在基板上形成并图案化的遮光膜形成的屏蔽部; 透光部，其通过使基板的表面部分曝光而形成; 以及通过部分地蚀刻所述基板的表面形成的移相器部分，所述方法包括以下步骤：依次制备具有遮光膜的光学元件坯料和层压在所述基板上的第一抗蚀剂膜; 并且通过对第一抗蚀剂膜进行拉伸和显影来形成第一抗蚀剂图案，覆盖屏蔽部分的形成预定区域，以及划定移相器部分的形成预定区域。

8. 发明授权

US08110323B2 Optically semitransmissive film, photomask blank and photomask, and method for designing optically semitransmissive film 有权
标题翻译：光学半透射膜，光掩模坯料和光掩模，以及用于设计光学半透射膜的方法
公开(公告)号：US08110323B2
公开(公告)日：2012-02-07
申请号：US13098096
申请日：2011-04-29
申请人： Yuki Shiota , Osamu Nozawa
发明人： Yuki Shiota , Osamu Nozawa
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/26 , G03F1/32 , G03F1/34 , G03F1/54
摘要： The present invention provides an optically semitransmissive film that has a near-zero phase shift, has a desired transmissivity, and is relatively thin; a novel phase-shift mask that uses the optically semitransmissive film; a photomask blank that can [be used to] manufacture the phase-shift mask; and a method for designing the optically semitransmissive film. The film is formed on a translucent substrate and transmits a portion of light having a desired wavelength λ, wherein the film has at least one phase-difference reduction layer that fulfills the following functions. Specifically, the phase-difference reduction layer is a layer that has a refractive index n and a thickness d that satisfy the expression 0
摘要翻译：本发明提供一种光学半透射膜，其具有接近零的相移，具有期望的透射率，并且相对较薄; 一种使用光学半透射膜的新型相移掩模; 可以[用于]制造相移掩模的光掩模坯料; 以及用于设计光学半透射膜的方法。膜形成在透光性基板上，透过具有期望波长λ的光的一部分，其中，膜具有满足以下功能的至少一个相位差减少层。具体地说，相位差减少层是折射率n和厚度d满足表达式0

9. 发明授权

US08057968B2 Mask and method to pattern chromeless phase lithography contact hole 有权
标题翻译：掩模和方法来绘制无铬相光刻接触孔
公开(公告)号：US08057968B2
公开(公告)日：2011-11-15
申请号：US12695167
申请日：2010-01-28
申请人： Sia Kim Tan , Soon Yoeng Tan , Qun Ying Lin , Huey Ming Chong , Liang Choo Hsia
发明人： Sia Kim Tan , Soon Yoeng Tan , Qun Ying Lin , Huey Ming Chong , Liang Choo Hsia
IPC分类号： G03F1/00
CPC分类号： G03F1/34
摘要： A method of making a mask is disclosed. The method includes providing a first and a second mask layers and disposing a first phase shift region on the first mask layer. A second phase shift region is disposed on the second mask layer, wherein the first and second phase shift regions are out of phase. A continuous unit cell is formed in the first phase shift region. The unit cell comprises a center section and distinct extension sections. The extension sections are contiguous to and extend outwards from the center section. The distinct extension sections have a same width as the center section. The second phase shift region is adjacent to the unit cell in the first phase shift region.
摘要翻译：公开了制作掩模的方法。该方法包括提供第一和第二掩模层，并在第一掩模层上设置第一相移区域。第二相移区域设置在第二掩模层上，其中第一和第二相移区域是异相的。在第一相移区域中形成连续单元。单元电池包括中心部分和不同的延伸部分。延伸部分与中心部分相邻并向外延伸。不同的延伸部分具有与中心部分相同的宽度。第二相移区域与第一相移区域中的单元电池相邻。

10. 发明授权

US08048354B2 Method of forming supports bearing features, such as lithography masks 有权
标题翻译：形成支撑轴承特征的方法，例如光刻掩模
公开(公告)号：US08048354B2
公开(公告)日：2011-11-01
申请号：US12092911
申请日：2006-11-09
申请人： Stephan Landis , Jean-Philippe Gouy
发明人： Stephan Landis , Jean-Philippe Gouy
IPC分类号： B29C33/40
CPC分类号： B82Y10/00 , B81C99/009 , B82Y40/00 , G03F1/34 , G03F7/0002
摘要： To manufacture a support made of at least one predetermined material and bearing features: a plurality of superposed layers is produced on a substrate that it is known how to remove, each of the layers being formed from zones of at least two different materials, the geometry of the zones and the constituent materials of these superposed layers being defined so as to form said features, on the reverse side of the substrate, these features being of 3D type, and some of these features differing in height among themselves and/or with other features; a layer of the predetermined material is produced on this multilayer stack; and at least the substrate is eliminated whereby, after inversion, said support with said features is obtained.
摘要翻译：为了制造由至少一种预定材料制成的支撑件和轴承特征：在基底上产生多个重叠层，已知如何去除每个由至少两种不同材料的区域形成的层，几何形状的区域和这些重叠层的构成材料被限定以形成所述特征，在基底的相反侧，这些特征是3D型的，并且这些特征中的一些这些特征在它们之间和/或与其它部分之间的高度不同特征; 在该多层叠层上产生一层预定材料; 并且至少消除基板，由此在反转之后获得具有所述特征的所述支撑件。

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