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1. 发明授权

US4734383A Fabricating semiconductor devices to prevent alloy spiking 失效
标题翻译：制造半导体器件以防止合金尖峰
公开(公告)号：US4734383A
公开(公告)日：1988-03-29
申请号：US800954
申请日：1985-11-22
申请人： Shuji Ikeda , Kouichi Nagasawa , Makoto Motoyoshi , Kiyoshi Nagai , Satoshi Meguro
发明人： Shuji Ikeda , Kouichi Nagasawa , Makoto Motoyoshi , Kiyoshi Nagai , Satoshi Meguro
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/08 , H01L21/425
CPC分类号： H01L21/823814 , H01L29/0847 , H01L27/0928
摘要： After contact holes for the P- and N-type source or drain regions of P- and N-channel MOSFETs have been made at a common step, an N-type impurity is ion-implanted into at least the N-type source or drain regions through the contact holes. The N-type impurity is annealed to form an N-type region which is deeper than the N-type source or drain regions. During the annealing treatment, the N-type source or drain regions are covered with an insulating film.
摘要翻译：在P和N沟道MOSFET的P型和N型源极区或漏极区的接触孔已经制成了共同的步骤之后，N型杂质被离子注入至少N型源极或漏极区域通过接触孔。将N型杂质退火，形成比N型源区或漏区更深的N型区。在退火处理期间，N型源极或漏极区域被绝缘膜覆盖。

2. 发明授权

US5055420A Process for fabricating semiconductor integrated circuit devices 失效
标题翻译：制造半导体集成电路器件的工艺
公开(公告)号：US5055420A
公开(公告)日：1991-10-08
申请号：US351323
申请日：1989-05-09
申请人： Shuji Ikeda , Kouichi Nagasawa , Makoto Motoyoshi , Kiyoshi Nagai , Satoshi Meguro
发明人： Shuji Ikeda , Kouichi Nagasawa , Makoto Motoyoshi , Kiyoshi Nagai , Satoshi Meguro
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/08
CPC分类号： H01L21/823814 , H01L29/0847 , H01L27/0928
摘要： After contact holes for the P- and N-type source or drain regions of P- and N-channel MOSFETs have been made at a common step, an N-type impurity is ion-implanted into at least the N-type source or drain regions through the contact holes. The N-type impurity is annealed to fornm an N-type region which is deeper than the N-type source or drain regions. During the annealing treatment, the N-type source or drain regions are covered with an insulating film.

3. 发明授权

US5444012A Method for manufacturing semiconductor integrated circuit device having a fuse element 失效
标题翻译：具有熔丝元件的半导体集成电路器件的制造方法
公开(公告)号：US5444012A
公开(公告)日：1995-08-22
申请号：US278073
申请日：1994-07-20
申请人： Keiichi Yoshizumi , Kazushi Fukuda , Seiichi Ariga , Shuji Ikeda , Makoto Saeki , Kiyoshi Nagai , Soichiro Hashiba , Shinji Nishihara , Fumiyuki Kanai
发明人： Keiichi Yoshizumi , Kazushi Fukuda , Seiichi Ariga , Shuji Ikeda , Makoto Saeki , Kiyoshi Nagai , Soichiro Hashiba , Shinji Nishihara , Fumiyuki Kanai
IPC分类号： H01L21/66 , H01L21/768 , H01L21/82 , H01L21/822 , H01L21/8244 , H01L23/522 , H01L23/525 , H01L27/04 , H01L21/70 , H01L27/00
CPC分类号： H01L27/11 , H01L23/5256 , H01L2924/0002 , Y10S148/055
摘要： In depositing a silicon oxide film which constitutes part of a final passivation film onto a bonding pad formed on an interlayer insulating film, the silicon oxide depositing step is divided in two stages, and after the first deposition, the bonding pad is once exposed by etching, then the second deposition is performed, whereby the silicon oxide film which has thus been deposited in two stages is formed over a fuse element formed under the interlayer insulating film, while on the bonding pad is formed only the silicon oxide film deposited in the second stage. As a result, at the time of etching polyimide resin, silicon nitride film and silicon oxide film successively to expose the bonding pad, there remains a sufficient thickness of insulating film between the bottom of an aperture which is formed at the same time and the fuse element. Thereafter, an electrical test is conducted while applying a probe to the bonding pad and, where required, the fuse element located under the aperture is cut.
摘要翻译：在将构成最终钝化膜的一部分的氧化硅膜沉积到形成在层间绝缘膜上的接合焊盘上的情况下，将氧化硅沉积步骤分成两个阶段，在第一次沉积之后，通过蚀刻将接合焊盘一次曝光，然后进行第二沉积，由此形成在层间绝缘膜下面的熔丝元件上形成两级沉积的氧化硅膜，而在焊盘上仅形成沉积在第二层中的氧化硅膜阶段。结果，在蚀刻聚酰亚胺树脂，氮化硅膜和氧化硅膜时，连续地露出接合焊盘，在同时形成的孔的底部和熔丝之间保持足够的绝缘膜厚度元件。此后，在将探针施加到接合焊盘的同时进行电气测试，并且如果需要，则切割位于孔下方的熔丝元件。

4. 发明授权

US08090544B2 Method for determining concentration of impurity element 有权
标题翻译：测定杂质元素浓度的方法
公开(公告)号：US08090544B2
公开(公告)日：2012-01-03
申请号：US11569827
申请日：2005-06-02
申请人： Kiyoshi Nagai , Tetsuo Ishida
发明人： Kiyoshi Nagai , Tetsuo Ishida
IPC分类号： G01N31/00
CPC分类号： G01N23/2258
摘要： A method for shortening a waiting time from the setting of a sample in a chamber to the stabilisation of the intensity for a secondary ion for SIMS analysis (mass analysis of the secondary ion) using a raster variation method is provided. By approximating so that the difference between time-lapse variations in intensities of the secondary ions sequentially measured for irradiation densities of two different primary ions becomes constant, a method capable of carrying out an accurate measurement of the concentration of an impurity in consideration of background noise despite time-lapse variations in the intensities of the secondary ions is provided.
摘要翻译：提供了一种缩短从室中样品设置到使用光栅变化方法进行SIMS分析（二次离子质量分析）的二次离子强度的稳定化的等待时间的方法。通过近似，使得对于两个不同的一次离子的照射密度顺序测量的次级离子的时间延迟变化之间的差异变得恒定，可以考虑到背景噪声对杂质的浓度进行精确测量的方法尽管提供了次级离子的强度的延时变化。

5. 发明授权

US06215941B1 Optical delay time adjuster and optical time-division multiplexer 失效
标题翻译：光延迟时间调节器和光时分复用器
公开(公告)号：US06215941B1
公开(公告)日：2001-04-10
申请号：US09248324
申请日：1999-02-11
申请人： Kiyoshi Nagai , Yukihiro Ozeki
发明人： Kiyoshi Nagai , Yukihiro Ozeki
IPC分类号： G02B600
CPC分类号： G02B6/2861
摘要： An optical delay time adjuster and an optical time-division multiplexer. The delay time adjuster includes a support, an optical fiber attached to the support, and a device attached to the support which adjustably changes the length of the optical fiber. In various embodiments the device is an electric heater or cooling device or provides current to a piezoelectric element serving as the support. The optical time-division multiplexer includes an optical coupler which multiplexes optical signals received at its input ports, and the optical delay time adjuster connected to one of the input ports of the coupler.
摘要翻译：光延迟时间调节器和光时分复用器。延迟时间调节器包括支撑件，附接到支撑件的光纤，以及附接到支撑件的装置，其可调整地改变光纤的长度。在各种实施例中，该装置是电加热器或冷却装置，或者将电流提供给用作支撑件的压电元件。光时分多路复用器包括多路复用在其输入端口处接收的光信号的光耦合器和连接到耦合器的一个输入端口的光延迟时间调节器。

6. 发明授权

US4852958A Optical matrix switch having optimized crosstalk characteristics and uniform optical output intensity 失效
标题翻译：光矩阵开关具有优化的串扰特性和均匀的光输出强度
公开(公告)号：US4852958A
公开(公告)日：1989-08-01
申请号：US166305
申请日：1988-03-10
申请人： Hideaki Okuyama , Shigehiro Kusumoto , Keisuke Watanabe , Kiyoshi Nagai
发明人： Hideaki Okuyama , Shigehiro Kusumoto , Keisuke Watanabe , Kiyoshi Nagai
IPC分类号： H04Q3/52
CPC分类号： H04Q11/0005 , G02B2006/12119 , G02B2006/12145 , H04Q2011/0052
摘要： An optical matrix switch with 2.sup.i+1 input ports (where i is a natural number) and 2.sup.i+1 output ports, that performs a matrix selection on optical input signals received at the input ports and outputs them as optical output signals at the output ports, comprises: an i-stage input branching tree consisting of 1.times.2 branching means connected in a tree configuration, for dividing the optical input signals into 2.sup.(2i+1) branched signals; a double tree including 2.sup.2i 2.times.2 optical switches connected in series to the input branching tree so that each 2.times.2 optical switch receives two branched signals from different input ports and generates switch output signals at a selected one of its two outputs; and an i-stage output merging tree consisting of 2.times.1 merging means connected in a tree configuration for receiving the switch output signals from the 2.times.2 optical switches and generating optical output signals at the 2.sup.i+1 output ports. Dummy points of intersection are provided to equalize the number of points of intersection on any light propagation path from an input port to an output port.

7. 发明授权

US4846542A Optical switch matrix 失效
标题翻译：光开关矩阵
公开(公告)号：US4846542A
公开(公告)日：1989-07-11
申请号：US254690
申请日：1988-10-07
申请人： Hideaki Okayama , Akio Matoba , Nobuo Kobayashi , Issei Asabayashi , Kiyoshi Nagai , Ryoko Shibuya
发明人： Hideaki Okayama , Akio Matoba , Nobuo Kobayashi , Issei Asabayashi , Kiyoshi Nagai , Ryoko Shibuya
IPC分类号： G02F1/313
CPC分类号： G02F1/3132
摘要： An optical switch matrix for selecting an optical propagation route between input ports and output ports by electric control. A first directional coupler is disposed on the input port side of a crosspoint of the matrix. A second directional coupler is disposed on the output port side of the crosspoint. A corner reflector is formed at a joint of the first and second directional coupler.
摘要翻译：一种用于通过电气控制选择输入端口和输出端口之间的光传播路径的光开关矩阵。第一定向耦合器设置在矩阵的交叉点的输入端口侧。第二定向耦合器设置在交叉点的输出端口侧。角部反射器形成在第一和第二定向耦合器的接头处。

8. 发明授权

US4662915A Powder-air separator for use in a powder filling apparatus 失效
标题翻译：用于粉末填充装置的粉末 - 空气分离器
公开(公告)号：US4662915A
公开(公告)日：1987-05-05
申请号：US753615
申请日：1985-07-09
申请人： Norio Shirai , Jotaro Kishimoto , Yukihide Noguchi , Hideomi Ishibe , Kiyoshi Nagai
发明人： Norio Shirai , Jotaro Kishimoto , Yukihide Noguchi , Hideomi Ishibe , Kiyoshi Nagai
IPC分类号： B01D46/10 , B65B1/16
CPC分类号： B01D46/10
摘要： A powder-air separator with a filter made by sintering short-cut filament-shaped particles or by sintering a mixture of short-cut filament-shaped particles and ordinary atomized round particles.
摘要翻译：具有通过烧结短切丝状颗粒或通过烧结短切丝状颗粒和普通雾化圆形颗粒的混合物制成的过滤器的粉末 - 空气分离器。

9. 发明申请

US20090198452A1 METHOD FOR DETERMINING CONCENTRATION OF IMPURITY ELEMENT 有权
标题翻译：确定污染物浓度浓度的方法
公开(公告)号：US20090198452A1
公开(公告)日：2009-08-06
申请号：US11569827
申请日：2005-06-02
申请人： Kiyoshi Nagai , Tetsuo Ishida
发明人： Kiyoshi Nagai , Tetsuo Ishida
IPC分类号： G06F19/00
CPC分类号： G01N23/2258
摘要： A method for shortening a waiting time from the setting of a sample in a chamber to the stabilisation of the intensity for a secondary ion for SIMS analysis (mass analysis of the secondary ion) using a raster variation method is provided. By approximating so that the difference between time-lapse variations in intensities of the secondary ions sequentially measured for irradiation densities of two different primary ions becomes constant, a method capable of carrying out an accurate measurement of the concentration of an impurity in consideration of background noise despite time-lapse variations in the intensities of the secondary ions is provided.
摘要翻译：提供了一种缩短从室中样品设置到使用光栅变化方法进行SIMS分析（二次离子质量分析）的二次离子强度的稳定化的等待时间的方法。通过近似，使得对于两个不同的一次离子的照射密度顺序测量的次级离子的时间延迟变化之间的差异变得恒定，可以考虑到背景噪声对杂质的浓度进行精确测量的方法尽管提供了次级离子的强度的延时变化。

10. 发明授权

US07537194B2 Flow control valve 有权
标题翻译：流量控制阀
公开(公告)号：US07537194B2
公开(公告)日：2009-05-26
申请号：US11808896
申请日：2007-06-13
申请人： Kiyoshi Nagai
发明人： Kiyoshi Nagai
IPC分类号： F16K1/12
CPC分类号： F16K1/38
摘要： A compact flow control valve with high flow stability is arranged to comprises: a valve body made of resin including; a first passage formed in the valve body; a valve port communicating with the first passage; and a valve seat formed around the valve port; a valve element movable into contact with and away from the valve seat; a valve chamber formed around the valve seat; a second passage communicating with the valve chamber; and a flow adjustment rod for adjusting a flow rate of a fluid allowed to flow in the valve chamber, wherein the flow adjustment rod is adjustable in position to change an opening degree of the valve element relative to the valve seat for adjusting the flow rate, and the flow control valve further comprises an annular recess formed in an inner periphery of the valve seat formed surrounding the valve port and configured to prevent radial deformation of the valve port when the valve element is moved into contact with the valve seat.
摘要翻译：具有高流动稳定性的紧凑型流量控制阀被布置成包括：由树脂制成的阀体，包括：形成在阀体中的第一通道; 与第一通道连通的阀口; 以及围绕所述阀口形成的阀座; 可与阀座接触并远离阀座的阀元件; 形成在阀座周围的阀室; 与阀室连通的第二通道; 以及流量调节杆，用于调节允许在所述阀室中流动的流体的流量，其中所述流量调节杆在位置可调，以改变所述阀元件相对于所述阀座的开度以调节所述流量，并且所述流量控制阀还包括环形凹部，所述环形凹槽形成在所述阀座的内周边，形成在所述阀口周围，并被构造成当所述阀元件移动与所述阀座接触时防止所述阀口的径向变形。

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