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1. 发明授权

US5670403A Dielectric-polysilicon-dielectric antifuse for field programmable logic applications 失效
标题翻译：用于现场可编程逻辑应用的介质 - 多晶硅 - 电介质反熔丝
公开(公告)号：US5670403A
公开(公告)日：1997-09-23
申请号：US441176
申请日：1995-01-30
申请人： Wenn-Jei Chen
发明人： Wenn-Jei Chen
IPC分类号： H01L23/525 , H01L21/311
CPC分类号： H01L23/5252 , H01L2924/0002 , H01L2924/3011 , Y10S148/055
摘要： A novel antifuse structure includes a novel antifuse material layer comprises a first dielectric layer, a first polysilicon layer (which may optionally be lightly doped) disposed over the first dielectric layer, and a second dielectric layer disposed over the first polysilicon layer. The dielectric layers may be formed of silicon nitride, silicon dioxide, silicon oxynitride and combinations of the foregoing. Additional layers may also be included to form D/P/D/P/D, D/P/D/a-Si/D sandwiches, and the like. The polysilicon layer provides the ability to control the breakdown voltage of the antifuse through control of the doping level while maintaining a relatively large thickness of the antifuse material layer resulting in low capacitance for the antifuse. The antifuse material layer is compatible with high temperature processes (500.degree. C.-950.degree. C.) and may be carried out in the range of 400.degree. C.-950.degree. C. making it compatible with a wide range of processes.
摘要翻译：一种新颖的反熔丝结构包括一种新颖的反熔丝材料层，其包括第一介电层，设置在第一介电层上的第一多晶硅层（其可任选地是轻掺杂的）和设置在第一多晶硅层上的第二介电层。电介质层可以由氮化硅，二氧化硅，氮氧化硅以及前述的组合形成。还可以包括另外的层以形成D / P / D / P / D，D / P / D / a-Si / D三明治等。多晶硅层提供通过控制掺杂水平来控制反熔丝的击穿电压的能力，同时保持反熔丝材料层的相对较大的厚度，从而导致反熔丝的低电容。反熔丝材料层与高温工艺（500℃〜950℃）兼容，可在400℃〜950℃的范围内进行，使其与广泛的工艺相容。

2. 发明授权

US5659182A Three-terminal fuse 失效
标题翻译：三端保险丝
公开(公告)号：US5659182A
公开(公告)日：1997-08-19
申请号：US454505
申请日：1995-05-30
申请人： Simon S. Cohen
发明人： Simon S. Cohen
IPC分类号： H01L23/525 , H01L29/04 , H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , Y10S148/055
摘要： A device and a method for interrupting the continuity of a conductor and linking a pair of conductors are disclosed. The device is a three-terminal fuse having first and second terminals initially connected by a conductor and a third terminal separated from the conductor at a breakpoint of the conductor by an insulator. By applying a voltage across the third terminal or control terminal and the conductor, a transient conductive link is formed between the conductor and the control terminal. If sufficient current is provided through the transient link, heating of the link causes the metal of the conductor to melt and boil away, thus interrupting the continuity of the conductor.
摘要翻译：公开了一种用于中断导体的连续性并连接一对导体的装置和方法。该装置是三端子熔丝，其第一和第二端子最初由导体连接，第三端子在绝缘体的导体的断点处与导体分离。通过在第三端子或控制端子和导体上施加电压，在导体和控制端子之间形成瞬态导电连接。如果通过瞬态连接提供足够的电流，则连接件的加热会导致导体的金属熔化和沸腾，从而中断导体的连续性。

3. 发明授权

US5650355A Process of making and process of trimming a fuse in a top level metal and in a step 失效
标题翻译：制造和加工在顶级金属中修整保险丝的步骤
公开(公告)号：US5650355A
公开(公告)日：1997-07-22
申请号：US473386
申请日：1995-06-07
申请人： Hideyuki Fukuhara , Shigeo Ashigaki
发明人： Hideyuki Fukuhara , Shigeo Ashigaki
IPC分类号： H01L21/82 , H01L23/525 , H01L21/44
CPC分类号： H01L23/5258 , H01L2924/0002 , Y10S148/055 , Y10S438/926
摘要： A fuse link 16 is formed of a portion of a top level of patterned metal conductor in a multilevel conductor integrated circuit 10. A deposited layer of oxide material 26 covers the fuse link. Radiant energy from such as a laser 36 is directed through the oxide material 26 to heat and open the fuse link 16. Layers of deposited protective oxide 28 and PIX 30 then cover the fuse link and layer of oxide material. One photoprocessing step is avoided by locating the fuse link 16 and bond pad 22, both made from the top layer of conductive material, at different levels. The blanket etch then exposes the bond pad 22 while leaving the fuse link 16 covered. The fuse link can be formed down in a step 38 or the bond pad 22 can be formed above such as a group of memory cells 80. The bond pad 22 and fuse link 16 also can be formed at the same level with other process procedures.
摘要翻译：熔丝连接16由多层导体集成电路10中的图案化金属导体顶层的一部分形成。氧化物材料26的沉积层覆盖熔丝链。来自诸如激光器36的辐射能量被引导通过氧化物材料26以加热并打开熔丝16。沉积的保护氧化物28和PIX 30的层然后覆盖熔丝链和氧化物层。通过将熔丝连接16和两个由导电材料的顶层制成的接合焊盘22放置在不同的水平上来避免一个光处理步骤。毯式蚀刻然后暴露接合焊盘22，同时保留熔丝链16。熔丝链可以在步骤38中向下形成，或者可以在诸如一组存储单元80的上方形成接合焊盘22.接合焊盘22和熔丝连接16也可以与其它工艺程序形成在相同的水平。

4. 发明授权

US5482884A Low-temperature process metal-to-metal antifuse employing silicon link 失效
标题翻译：采用硅链接的低温工艺金属对金属反熔丝
公开(公告)号：US5482884A
公开(公告)日：1996-01-09
申请号：US287724
申请日：1994-08-09
申请人： John L. McCollum , Abdul R. Forouhi
发明人： John L. McCollum , Abdul R. Forouhi
IPC分类号： H01L23/525 , H01L21/70
CPC分类号： H01L23/5252 , H01L2924/0002 , Y10S148/055
摘要： A process for fabricating the metal-to-metal antifuse of the present invention includes the steps of forming a first metal layer on a semiconductor or other microcircuit structure; forming a first barrier layer over the first metal layer; forming a thick insulating layer over the barrier layer; forming an antifuse aperture in the thick insulating layer; forming a first heavily doped amorphous silicon layer in the aperture over the first barrier layer; forming a dielectric antifuse material layer over the first amorphous silicon layer; forming a second heavily doped amorphous silicon layer over the first dielectric antifuse material layer; forming a second barrier layer over the second amorphous silicon layer; and forming a second metal layer over the second barrier layer.
摘要翻译：本发明的金属 - 金属反熔丝的制造方法包括在半导体或其他微电路结构上形成第一金属层的步骤; 在所述第一金属层上形成第一阻挡层; 在阻挡层上形成厚的绝缘层; 在厚绝缘层中形成反熔丝孔; 在所述第一阻挡层上的所述孔中形成第一重掺杂非晶硅层; 在所述第一非晶硅层上形成绝缘反熔丝材料层; 在所述第一介电反熔丝材料层上形成第二重掺杂非晶硅层; 在所述第二非晶硅层上形成第二阻挡层; 以及在所述第二阻挡层上形成第二金属层。

5. 发明授权

US5468680A Method of making a three-terminal fuse 失效
标题翻译：制造三端子保险丝的方法
公开(公告)号：US5468680A
公开(公告)日：1995-11-21
申请号：US210344
申请日：1994-03-18
申请人： Simon S. Cohen
发明人： Simon S. Cohen
IPC分类号： H01L23/525 , H01L21/14 , H01L21/44
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , Y10S148/055
摘要： A device and a method for interrupting the continuity of a conductor and linking a pair of conductors are disclosed. The device is a three-terminal fuse having first and second terminals initially connected by a conductor and a third terminal separated from the conductor at a breakpoint of the conductor by an insulator. By applying a voltage across the third terminal or control terminal and the conductor, a transient conductive link is formed between the conductor and the control terminal. If sufficient current is provided through the transient link, heating of the link causes the metal of the conductor to melt and boil away, thus interrupting the continuity of the conductor.
摘要翻译：公开了一种用于中断导体的连续性并连接一对导体的装置和方法。该装置是三端子熔丝，其第一和第二端子最初由导体连接，第三端子在绝缘体的导体的断点处与导体分离。通过在第三端子或控制端子和导体上施加电压，在导体和控制端子之间形成瞬态导电连接。如果通过瞬态连接提供足够的电流，则连接件的加热会导致导体的金属熔化和沸腾，从而中断导体的连续性。

6. 发明授权

US5444287A Thermally activated noise immune fuse 失效
标题翻译：热激噪声免疫保险丝
公开(公告)号：US5444287A
公开(公告)日：1995-08-22
申请号：US292901
申请日：1994-08-10
申请人： Raschid J. Bezama , Dominic J. Schepis , Krishna Seshan
发明人： Raschid J. Bezama , Dominic J. Schepis , Krishna Seshan
IPC分类号： H01H85/00 , H01H85/02 , H01H85/046 , H01H85/12 , H01L23/525 , H01L23/58 , H01L29/167 , H01L23/48 , H01L29/207
CPC分类号： H01L23/5256 , H01L2924/0002 , Y10S148/055
摘要： A noise immune fuse having sub-micron dimensions which can be programmed by an electrically and thermally synchronized event. The fuse includes a pair of fuse links in close proximity of each other, a layer of thermally conductive and electrically insulating material thermally coupling the two links forming the pair, and means for programming the first link by prompting the second link to gate the energy transfer between the links via the coupling layer. By combining thermal and electrical pulses to perform the programming function, the reliability of the fuse structure is greatly enhanced when compared to that of a single element fuse.
摘要翻译：具有亚微米尺寸的噪声免疫保险丝，可通过电和热同步事件进行编程。熔丝包括彼此紧密相邻的一对熔丝链，热耦合形成该对的两个连接的导热和电绝缘材料层，以及用于通过提示第二连接件对能量传递进行栅极编程的装置通过耦合层在链路之间。通过组合热和电脉冲来执行编程功能，与单个元件熔断器相比，熔丝结构的可靠性大大提高。

7. 发明授权

US5404029A Electrically programmable antifuse element 失效
标题翻译：电可编程反熔丝元件
公开(公告)号：US5404029A
公开(公告)日：1995-04-04
申请号：US790366
申请日：1991-11-12
申请人： John D. Husher , Abdul R. Forouhi
发明人： John D. Husher , Abdul R. Forouhi
IPC分类号： H01H85/06 , H01L23/525 , H01L23/532 , H01L23/48 , H01L27/02 , H01L29/46 , H01L29/62
CPC分类号： H01L23/53223 , H01L23/5252 , H01L2924/0002 , H01L2924/3011 , Y10S148/055
摘要： An antifuse according to the present invention includes a lower electrode formed from a first metal interconnect layer in an integrated circuit or the like. The lower electrode is disposed on an insulating surface. An inter-metal dielectric including an antifuse aperture disposed there lies over the inter-metal dielectric layer. The antifuse aperture extends through the inter-metal dielectric layer and also extends completely through the lower electrode. An antifuse material is disposed in the antifuse aperture. An upper electrode formed from a first metal interconnect layer is disposed over the antifuse material.
摘要翻译：根据本发明的反熔丝包括由集成电路等中的第一金属互连层形成的下电极。下电极设置在绝缘表面上。包括设置在其上的反熔丝孔的金属间电介质覆盖在金属间介电层上。反熔丝孔延伸穿过金属间介电层，并且还完全延伸穿过下电极。反熔丝材料设置在反熔丝孔中。由第一金属互连层形成的上电极设置在反熔丝材料的上方。

8. 发明授权

US5387311A Method for manufacturing anti-fuse structures 失效
标题翻译：制造抗熔丝结构的方法
公开(公告)号：US5387311A
公开(公告)日：1995-02-07
申请号：US17542
申请日：1993-02-16
申请人： Stacy W. Hall , Miguel A. Delgado
发明人： Stacy W. Hall , Miguel A. Delgado
IPC分类号： H01L21/768 , H01L23/525 , H01L21/306
CPC分类号： H01L23/5252 , H01L21/76888 , H01L2924/0002 , Y10S148/055
摘要： A method for removing excess spacer material in the link vias and open areas of an anti-fuse structure without thinning the anti-fuse layer in the vias by overetching. In an anti-fuse structure, a spacer layer is deposited on an anti-fuse layer where vias in the structure cause a thinner layer of spacer material to be deposited in the vias. A first etch of the spacer layer is accomplished to provide protective spacers in the vias. The etch completely removes the thinner section of the spacer material between the spacers in the vias without overetch, while some spacer material portions remain on the other, open areas of the anti-fuse structure. Designated fuse vias are masked and a second etch of the leftover spacer material is accomplished. This method removes excess spacer material from link vias and other areas around the fuse vias and prevents the anti-fuse layer in the fuse vias from thinning from overetching procedures.
摘要翻译：一种用于去除反熔丝结构的连接通孔和开口区域中的多余间隔物的方法，而不会通过过蚀刻而使过孔中的抗熔丝层变薄。在反熔丝结构中，间隔层沉积在反熔丝层上，其中结构中的通孔使较薄的间隔物层沉积在通孔中。实现间隔层的第一蚀刻，以在通孔中提供保护隔离物。蚀刻完全去除了通孔中的间隔物之间的间隔物材料的较薄部分而没有过蚀刻，而一些隔离材料部分保留在反熔丝结构的另一个开放区域上。指定的保险丝通孔被掩蔽，并且完成剩余间隔物材料的第二次蚀刻。该方法从连接通孔和保险丝通孔周围的其他区域去除多余的间隔物材料，并且防止熔丝通孔中的抗熔丝层从过蚀刻过程变薄。

9. 发明授权

US4912066A Make-link programming of semiconductor devices using laser-enhanced thermal breakdown of insulator 失效
标题翻译：使用激光增强绝缘子的热击穿来制造半导体器件的编程
公开(公告)号：US4912066A
公开(公告)日：1990-03-27
申请号：US164763
申请日：1988-03-07
申请人： Kendall S. Wills
发明人： Kendall S. Wills
IPC分类号： H01L21/768 , H01L23/525
CPC分类号： H01L21/76894 , H01L23/5254 , H01L2924/0002 , Y10S148/055
摘要： A semiconductor device is programmed by a laser beam which causes an insulator between two conductors on a silicon substrate to be permanently altered, as by breakdown of the insulator. The conductors may be metals such as aluminum or tungsten, and the insulator is a layer of deposited or thermal silicon oxide. The breakdown may be enhanced by voltage applied between the conductors while the laser beam is focused on the structure.
摘要翻译：半导体器件由激光束编程，这导致硅衬底上的两个导体之间的绝缘体被永久地改变，如通过绝缘体的击穿。导体可以是诸如铝或钨的金属，并且绝缘体是沉积或热氧化硅层。当激光束聚焦在结构上时，可以通过在导体之间施加的电压来增强击穿。

10. 发明授权

US4849365A Selective integrated circuit interconnection 失效
标题翻译：选择性集成电路互连
公开(公告)号：US4849365A
公开(公告)日：1989-07-18
申请号：US156378
申请日：1988-02-16
申请人： David R. Gifford
发明人： David R. Gifford
IPC分类号： H01L21/268 , H01L21/74 , H01L21/768
CPC分类号： H01L21/76886 , H01L21/268 , H01L21/743 , Y10S148/01 , Y10S148/055
摘要： A bipolar transistor with a laterally elongated emitter and base so a laser can diffuse dopant from that emitter through that base to the corresponding collector.
摘要翻译：具有横向延伸的发射极和基极的双极晶体管，因此激光器可以将掺杂剂从该发射极扩散通过该基极到相应的集电极。

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