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1. 发明授权

US5330880A Process for producing optical disks 失效
标题翻译：光盘制造工艺
公开(公告)号：US5330880A
公开(公告)日：1994-07-19
申请号：US936293
申请日：1992-08-28
申请人： Shinkichi Horigome , Yoshinori Miyamura , Yumiko Anzai , Keizo Kato , Hiroshi Shiraishi
发明人： Shinkichi Horigome , Yoshinori Miyamura , Yumiko Anzai , Keizo Kato , Hiroshi Shiraishi
IPC分类号： B29C33/38 , B29D17/00 , B29L17/00 , G11B7/26
CPC分类号： G11B7/261 , B29D17/005 , G11B7/26 , B29K2101/10
摘要： In a process for producing optical disks comprising the steps of subjecting the photoresist layer on a substrate formed of silicon, quartz, glass or a metal to light exposure, developing and etching treatments to obtain a stamper and then duplicating an information pattern for an optical disk from the stamper obtained above to a transparent substrate by using a UV curable resin to prepare a replicated substrate of an optical disk, a large number of stampers can be prepared in a short time by conducting the light exposure either by contacting the mask side surface of a substrate provided with a photomask having an information pattern for an optical disk to the photoresist side surface of said substrate having the photoresist layer or by noncontact projection, and a rapid replication of large quantities of replicated substrates becomes possible by using a large number of stampers thus prepared.
摘要翻译：在制造光盘的方法中，包括以下步骤：将由硅，石英，玻璃或金属形成的基板上的光致抗蚀剂层进行曝光，显影和蚀刻处理以获得压模，然后复制光盘的信息图案通过使用UV固化树脂从上述获得的印模到透明基板以制备光盘的复制基板，可以在短时间内通过曝光来制备大量印模机，方法是通过使曝光的掩模侧表面具有光掩模的基板，其具有光盘的信息图案到具有光致抗蚀剂层的所述基板的光致抗蚀剂侧表面或通过非接触投影，并且通过使用大量的印模机可以快速复制大量的复制基板从而准备好了。

2. 发明申请

US20140308685A1 ANTIBODY CAPABLE OF BINDING TO SPECIFIC REGION OF PERIOSTIN, AND METHOD FOR MEASURING PERIOSTIN USING SAME 有权
标题翻译：能够结合周期蛋白的特定区域的抗体以及使用其测量周期蛋白的方法
公开(公告)号：US20140308685A1
公开(公告)日：2014-10-16
申请号：US14342996
申请日：2012-09-06
申请人： Kenji Izuhara , Shoichiro Ohta , Kazuhiko Arima , Hiroshi Shiraishi , Shoichi Suzuki , Tomoaki Hoshino , Yoshinori Azuma , Junya Ono
发明人： Kenji Izuhara , Shoichiro Ohta , Kazuhiko Arima , Hiroshi Shiraishi , Shoichi Suzuki , Tomoaki Hoshino , Yoshinori Azuma , Junya Ono
IPC分类号： G01N33/68 , C07K16/18
CPC分类号： G01N33/6893 , C07K16/18 , C07K2317/14 , C07K2317/33 , G01N2333/47 , G01N2800/12
摘要： The present invention provides a method and a reagent for measuring periostin contained in a sample with improved accuracy, a method for improving accuracy in measurement of periostin, and a method of testing for pulmonary fibrosis or interstitial pneumonia with improved accuracy. The antibody of the present invention binds to at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin or a cleavage product thereof. The method and the reagent for measuring periostin and the method for improving accuracy in periostin measurement of the present invention is characterized by detecting at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin. The method of testing for pulmonary fibrosis or interstitial pneumonia of the present invention includes the steps of a) measuring the amount or concentration of periostin in a sample derived from a subject, which measuring includes detecting at least one region selected from the group consisting of an EMI region, an R1 region, an R2 region, and an R3 region of periostin and b) comparing the amount or concentration of the periostin in the sample derived from the subject with an amount or concentration of periostin in a sample derived from a living body not suffering from pulmonary fibrosis and interstitial pneumonia.
摘要翻译：本发明提供了一种精度更高的用于测定样品中的骨膜素的方法和试剂，提高骨膜素测定精度的方法以及以更高的精度测定肺纤维化或间质性肺炎的方法。本发明的抗体与选自由EMI区域，R1区域，R2区域和骨膜素的R3区域或其切割产物组成的组中的至少一个区域结合。用于测定骨膜素的方法和试剂以及本发明的骨膜素测定精度的提高方法的特征在于，检测从由EMI区域，R1区域，R2区域和R3组成的组中选择的至少一个区域骨膜素的区域本发明的肺纤维化或间质性肺炎的检测方法包括以下步骤：a）测量衍生自受试者的样品中骨膜素的量或浓度，所述测量包括检测至少一个选自以下的区域： EMI区域，R1区域，R2区域和骨膜素的R3区域，以及b）将源自受试者的样品中骨膜素的量或浓度与衍生自活体的样品中骨膜素的量或浓度进行比较不患肺纤维化和间质性肺炎。

3. 发明授权

US07659747B2 Transmission device 有权
标题翻译：传输设备
公开(公告)号：US07659747B2
公开(公告)日：2010-02-09
申请号：US12178219
申请日：2008-07-23
申请人： Hiroshi Shiraishi , Tetsuya Hayashi , Tomokazu Higuchi
发明人： Hiroshi Shiraishi , Tetsuya Hayashi , Tomokazu Higuchi
IPC分类号： H03K19/094
CPC分类号： H03K19/00384
摘要： A transmission device including: a driver unit which generates an output signal having an amplitude by a resistance division of a power-supply voltage; and an output-amplitude correction unit which generates current according to variation in the power-supply voltage, and corrects the amplitude by using the current.
摘要翻译：一种传输装置，包括：驱动器单元，其通过电源电压的电阻划分产生具有振幅的输出信号; 以及输出幅度校正单元，其根据电源电压的变化产生电流，并且通过使用电流来校正振幅。

4. 发明申请

US20050008976A1 Method of manufacturing an electronic device 审中-公开
标题翻译：制造电子装置的方法
公开(公告)号：US20050008976A1
公开(公告)日：2005-01-13
申请号：US10869892
申请日：2004-06-18
申请人： Toshio Sakamizu , Hiroshi Fukuda , Hiroshi Shiraishi
发明人： Toshio Sakamizu , Hiroshi Fukuda , Hiroshi Shiraishi
IPC分类号： G03F7/032 , B08B3/00 , G03C5/00 , G03F7/004 , G03F7/32 , H01L21/027 , H01L21/32 , H01L21/3213
CPC分类号： H01L21/0273 , G03F7/0046 , G03F7/325 , H01L21/32 , H01L21/32139
摘要： To form a fine resist pattern without collapse, the invention patterns a resist by applying a resist composition to a substrate to form a resist film, exposing the resist film to radiation in a desired pattern, and developing the exposed resist film using supercritical carbon dioxide at 200 atm or lower. The resist composition mainly includes a polymer having a solubility parameter equal to or lower than that of supercritical carbon dioxide.
摘要翻译：为了形成没有崩溃的精细抗蚀剂图案，本发明通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜来形成抗蚀剂，将抗蚀剂膜暴露于所需图案的辐射，并且使用超临界二氧化碳显影曝光的抗蚀剂膜 200 atm以下。抗蚀剂组合物主要包括溶解度参数等于或低于超临界二氧化碳的聚合物。

5. 发明授权

US06335472B1 Method of hydrogenating epoxidized C6—C12 cyclohydrocarbon compounds 失效
标题翻译：环氧化C6-C12环烃化合物的加氢方法
公开(公告)号：US06335472B1
公开(公告)日：2002-01-01
申请号：US09469376
申请日：1999-12-22
申请人： Tokuo Matsuzaki , Yasuo Nakamura , Takumi Manabe , Takato Nakamura , Nobuyuki Kuroda , Hiroshi Shiraishi
发明人： Tokuo Matsuzaki , Yasuo Nakamura , Takumi Manabe , Takato Nakamura , Nobuyuki Kuroda , Hiroshi Shiraishi
IPC分类号： C07C4923
CPC分类号： C07C45/58 , C07C29/132 , C07C2601/20 , C07C35/205
摘要： Epoxidized C6-C12 cyclohydrocarbon compounds, for example, epoxidized C6-C12 cycloalkanes, cycloalkenes and/or cycloalkadienes are converted to cycloalkanols, cycloalkanones and cycloalkanes by hydrogenating the epoxidized C6-C12 cyclohydrocarbon compounds with hydrogen under a pressure of 0.1 to 5.4 MPa at a temperature of 100 to 280° C. in the presence of a catalyst containing at least one platinum group metal, for example, Pd or Ru.
摘要翻译：环氧化的C 6 -C 12环烃化合物，例如环氧化的C 6 -C 12环烷烃，环烯烃和/或环链烯二烯通过在0.1至5.4MPa的压力下在氢气中氢化环烷化的C 6 -C 12环烃化合物而被转化为环烷醇，环烷酮和环烷烃在含有至少一种铂族金属的催化剂，例如Pd或Ru的存在下，温度为100-280℃。

6. 发明授权

US5389601A 3-alkoxy-N-cycloalkylsulfonyalkanoic amide derivative and herbicide using the same 失效
标题翻译： 3-烷氧基-N-环烷基磺基烯丙酰胺衍生物和除草剂
公开(公告)号：US5389601A
公开(公告)日：1995-02-14
申请号：US93859
申请日：1993-07-20
申请人： Takaaki Abe , Yuji Akiyoshi , Hiroshi Shiraishi , Ikuo Shiraishi , Takashi Hayama
发明人： Takaaki Abe , Yuji Akiyoshi , Hiroshi Shiraishi , Ikuo Shiraishi , Takashi Hayama
IPC分类号： A01N43/54 , A01N43/66 , C07D239/60 , C07D251/30 , C07D251/34 , C07D251/38
CPC分类号： A01N43/66 , A01N43/54 , C07D239/60 , C07D251/30 , C07D251/38
摘要： Disclosed are a 3-alkoxy-N-cyclolalkylsulfonylalkanoic amide compound represented by the formula (I): ##STR1## wherein R represents a lower alkyl group, a lower alkenyl group, a lower alkynyl group, a halo-lower alkyl group or a cyano-lower alkyl group; X represents an oxygen atom or a sulfur atom; Z represents a --CH.dbd. group or a nitrogen atom; and n represents an integer of 2 to 9,a process for preparing the same and a herbicide containing the same as an active ingredient(s).
摘要翻译：公开了由式（I）表示的3-烷氧基-N-环烷基磺酰基链烷酰胺化合物：其中R表示低级烷基，低级烯基，低级炔基，卤代低级烷基或氰基 - 低级烷基; X表示氧原子或硫原子; Z表示-CH =基团或氮原子; n表示2〜9的整数，其制备方法和含有活性成分的除草剂。

7. 发明授权

US5328807A Method of forming a pattern 失效
标题翻译：形成图案的方法
公开(公告)号：US5328807A
公开(公告)日：1994-07-12
申请号：US711954
申请日：1991-06-07
申请人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
发明人： Toshihiko Tanaka , Norio Hasegawa , Toshiaki Yamanaka , Akira Imai , Hiroshi Shiraishi , Takumi Ueno , Hiroshi Fukuda
IPC分类号： G03F1/34 , G03F7/20 , G03C5/00 , G03F9/00
CPC分类号： G03F1/34 , G03F7/2022
摘要： A comb-like or dot-like phase shifter pattern is added to a phase shifter used in phase shifting mask technology, which is then exposed onto a wafer. This enables the formation of extremely fine line patterns or space patterns having widths different from each other simultaneously. Further, when two reticles are disposed such that phase shifter patterns disposed therein intersect each other and are exposed consecutively onto a wafer, a fine hole pattern or dot pattern can be formed at a position where the phase shifter patterns intersect each other.
摘要翻译：将梳状或点状移相器图案添加到用于相移掩模技术的移相器中，然后将其暴露在晶片上。这使得能够同时形成彼此宽度不同的极细线图案或空间图案。此外，当两个掩模版被布置成使得设置在其中的移相器图案彼此相交并且连续地暴露在晶片上时，可以在移相器图案彼此相交的位置处形成细孔图案或点图案。

8. 发明授权

US4956052A Process for separation using supercritical fluid 失效
标题翻译：使用超临界流体分离方法
公开(公告)号：US4956052A
公开(公告)日：1990-09-11
申请号：US407704
申请日：1989-09-13
申请人： Mitsuho Hirata , Takeshi Ishikawa , Hiroshi Shiraishi
发明人： Mitsuho Hirata , Takeshi Ishikawa , Hiroshi Shiraishi
IPC分类号： C07B63/00 , B01D11/00 , B01D11/04 , C07B31/00 , C07C27/00 , C07C29/76 , C07C31/08 , C07C51/00 , C07C51/43 , C07C53/08 , C07C67/00
CPC分类号： B01D11/0407
摘要： A process for separation of components of a mixture of more than one organic substance or of a mixture of at least one organic substance and water by extraction using a supercritical fluid as an extractant. During the extraction an extraction aid having a higher affinity with an unextractable component of the mixture than with an extractable component of the mixture is present. Also disclosed is an apparatus for carrying out this process.
摘要翻译：通过使用超临界流体作为萃取剂萃取，分离多于一种有机物质或至少一种有机物质与水的混合物的组分的组分的方法。在提取期间，存在与混合物的可提取组分相比具有比不可萃取组分更高亲和力的萃取助剂。还公开了一种用于执行该过程的装置。

9. 发明授权

US06927002B2 Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权
标题翻译：光掩模，制造方法，图案化方法和半导体器件制造方法
公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
申请人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
发明人： Takashi Hattori , Yasuko Gotoh , Hidetoshi Satoh , Toshihiko Tanaka , Hiroshi Shiraishi
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/26 , G03F1/30 , G03F1/56
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译：为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。

10. 发明授权

US06750000B2 Electron device manufacturing method, a pattern forming method, and a photomask used for those methods 有权
标题翻译：电子器件制造方法，图案形成方法和用于这些方法的光掩模
公开(公告)号：US06750000B2
公开(公告)日：2004-06-15
申请号：US10671666
申请日：2003-09-29
申请人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
发明人： Toshihiko Tanaka , Norio Hasegawa , Hiroshi Shiraishi , Hidetoshi Satoh
IPC分类号： G03F700
CPC分类号： G03F1/30
摘要： A method of manufacturing an electron device provided with minute structure such as a semiconductor integrated circuit using projection exposure technique and phase shift mask technique, maintaining a high yield is disclosed. In an electron device manufacturing method according to the invention, a desired electron device is manufactured by printing a light shielding film pattern on a photosensitive film provided on the surface of a workpiece by a projection tool using a mask where a phase shifter having predetermined thickness is partially formed on the flat surface of a transparent plate and a light shielding film having a predetermined pattern and made of non-metal is partially provided with the film covering the end of the shifter and developing the photosensitive film. Further, concretely, the above pattern is printed using a mask where the light shielding film made of non-metal is partially extended on the surface of the shifter and the transparent plate including the end of the shifter by the projection tool. According to the electron device manufacturing method according to the invention, an electron device provided with minute structure can be precisely manufactured maintaining a high yield.
摘要翻译：公开了一种制造具有微小结构的电子器件的方法，例如使用投影曝光技术和相移掩模技术的半导体集成电路，保持高产率。在根据本发明的电子器件制造方法中，通过使用具有预定厚度的移相器的掩模通过投影工具在设置在工件表面上的感光膜上印刷遮光膜图案来制造所需的电子器件部分地形成在透明板的平坦表面上和具有预定图案并由非金属制成的遮光膜部分地设置有覆盖移位器的端部并显影感光膜的膜。此外，具体地，使用由非金属制成的遮光膜在移位器的表面上部分地延伸的掩模和通过投影工具包括移位器的端部的透明板来打印上述图案。根据本发明的电子器件制造方法，可以精确地制造具有微小结构的电子器件，保持高产率。

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