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1. 发明授权

US06863019B2 Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas 失效
标题翻译：半导体器件制造室清洗方法和清洁气体再循环的设备
公开(公告)号：US06863019B2
公开(公告)日：2005-03-08
申请号：US10159794
申请日：2002-05-30
申请人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
发明人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
IPC分类号： B08B7/00 , C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： B08B7/0035 , B08B7/00 , C23C16/4405 , C23C16/452 , C23C16/45593 , H01J37/3244 , H01J37/32844 , H01J2237/335 , Y02C20/30
摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.
摘要翻译：清洁半导体制造处理室的方法包括清洁气体组分的再循环。因此，有效地利用输入清洁气体，并且减少不期望的排放。该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

2. 发明授权

US06366346B1 Method and apparatus for optical detection of effluent composition 有权
标题翻译：用于光学检测流出物组成的方法和装置
公开(公告)号：US06366346B1
公开(公告)日：2002-04-02
申请号：US09196459
申请日：1998-11-19
申请人： Thomas Nowak , Sebastien Raoux , Dave Silvetti , Stefan Wolff , Russ Newman , Imad Yousif , Ned Matthew
发明人： Thomas Nowak , Sebastien Raoux , Dave Silvetti , Stefan Wolff , Russ Newman , Imad Yousif , Ned Matthew
IPC分类号： G01R3100
CPC分类号： H01J37/32834 , C23C16/4401 , H01J37/32935
摘要： A method and apparatus for determining the composition of an effluent stream from a vacuum processing chamber. A cell placed in the effluent stream from the vacuum processing chamber creates a glow discharge from the constituents in the effluent stream. An optical detector measures a particular wavelength corresponding to the presence of a particular species. In one embodiment the output from the optical detector is used to determine the endpoint of a chamber cleaning process.
摘要翻译：一种用于确定来自真空处理室的流出物流的组成的方法和装置。从真空处理室放置在流出物流中的电池从流出物流中的成分产生辉光放电。光学检测器测量对应于特定物种的存在的特定波长。在一个实施例中，来自光学检测器的输出用于确定腔室清洁过程的终点。

3. 发明授权

US06843881B2 Detecting chemiluminescent radiation in the cleaning of a substrate processing chamber 失效
标题翻译：在衬底处理室的清洁中检测化学发光辐射
公开(公告)号：US06843881B2
公开(公告)日：2005-01-18
申请号：US10115526
申请日：2002-04-02
申请人： Bok Hoen Kim , Nam Le , Martin Seamons , Ameeta Madhava , Michael P. Nault , Thomas Nowak , Tsutomu Tanaka , Moshe Sarfaty
发明人： Bok Hoen Kim , Nam Le , Martin Seamons , Ameeta Madhava , Michael P. Nault , Thomas Nowak , Tsutomu Tanaka , Moshe Sarfaty
IPC分类号： B08B7/00 , C23C16/44 , C23C16/52 , G01N21/76 , G05D27/02 , H01L21/306
CPC分类号： G05D27/02 , B08B7/0035 , C23C16/4405 , C23C16/52 , G01N21/76
摘要： In a substrate processing apparatus, a substrate processing chamber has a substrate support to support a substrate, a gas delivery system to provide an energized cleaning gas to the chamber to clean process residues formed on surfaces in the chamber during processing of the substrate, and an exhaust to exhaust the cleaning gas. A detector monitors a chemiluminescent radiation emitted from about a surface during cleaning of the process residues by the energized cleaning gas and generates a signal in relation to the monitored chemiluminescent radiation. A controller receives the signal and evaluates the signal to determine an endpoint of the cleaning process.
摘要翻译：在基板处理装置中，基板处理室具有用于支撑基板的基板支撑件，气体输送系统，用于向所述室提供通电的清洁气体，以清洁在所述基板的处理期间在所述室中形成的工艺残留物，以及排气以排出清洁气体。检测器在通过通电的清洁气体清洁过程残留物期间监测从表面周围发射的化学发光辐射，并产生与被监测的化学发光辐射有关的信号。控制器接收信号并评估信号以确定清洁过程的端点。

4. 发明授权

US06329297B1 Dilute remote plasma clean 有权
标题翻译：稀释远程等离子体清洁
公开(公告)号：US06329297B1
公开(公告)日：2001-12-11
申请号：US09553694
申请日：2000-04-21
申请人： Kenneth E. Balish , Thomas Nowak , Tsutomu Tanaka , Mark Beals
发明人： Kenneth E. Balish , Thomas Nowak , Tsutomu Tanaka , Mark Beals
IPC分类号： H01L2100
CPC分类号： H01J37/3244 , H01J2237/335 , Y10S156/916
摘要： A method and apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. A plasma formed in a remote plasma generator (27) is flown through a tube (62) to a plenum (60) where it is diluted to form a plasma mixture before flowing the plasma mixture into a processing chamber (15). The plasma mixture is used to clean deposits from the interior surfaces of the processing chamber, or can be used to perform an etch step on a process wafer within the processing chamber. In one embodiment, a plasma formed from NF3 is diluted with N2 to etch residue from the surfaces of a processing chamber used to deposit silicon oxide glass. Diluting the plasma increased the etching rate and made the etching rate more uniform across the diameter of the processing chamber.
摘要翻译：一种用于增强在远程等离子体发生器中形成的等离子体的蚀刻特性的方法和装置。形成在远程等离子体发生器（27）中的等离子体通过管（62）流到增压室（60），在其中稀释以形成等离子体混合物，然后将等离子体混合物流入处理室（15）。等离子体混合物用于从处理室的内表面清洁沉积物，或者可以用于在处理室内的处理晶片上进行蚀刻步骤。在一个实施方案中，用N 2稀释由NF 3形成的等离子体，以从用于沉积氧化硅玻璃的处理室的表面蚀刻残留物。稀释等离子体增加了蚀刻速率，并且使蚀刻速率在处理室的直径上更均匀。

5. 发明授权

US6163007A Microwave plasma generating apparatus with improved heat protection of sealing O-rings 有权
标题翻译：微波等离子体发生装置具有改进的密封O形圈的热保护
公开(公告)号：US6163007A
公开(公告)日：2000-12-19
申请号：US272898
申请日：1999-03-19
申请人： Tsutomu Tanaka , Thomas Nowak , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn
发明人： Tsutomu Tanaka , Thomas Nowak , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K9/00
CPC分类号： H01J37/32458 , H01J37/32192 , H01J2237/166
摘要： Apparatus for dissociating cleaning gas such as NF.sub.3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.
摘要翻译：用于解离诸如NF3的清洁气体用于半导体制造的装置包括：包围微波谐振器的壳体，微波能量被施加到微波谐振器，壳体内的等离子体管，其中清洁气体流动并由微波能量解离。等离子体管具有两个进入和离开清洁气体的端部。第一和第二结构组件热保护和密封等离子体管的每一端以抵抗大气泄漏。每个结构组件具有金属环和密封O形圈，紧密地围绕等离子体管的相应末端。每个金属套环包括具有高导热性的薄层弹性体材料，用于通过套环远离等离子体管的端部传导热量，从而保护O形环免受热损伤。这使得设备更有效地操作。风扇迫使环境空气流过设备。

6. 发明授权

US06868856B2 Enhanced remote plasma cleaning 失效
标题翻译：增强远程等离子清洗
公开(公告)号：US06868856B2
公开(公告)日：2005-03-22
申请号：US09905515
申请日：2001-07-13
申请人： Thomas Nowak , Ian Latchford , Tsutomu Tanaka , Bok Heon Kim , Ping Xu , Jason Foster , Heath B. DeShong , Martin Seamons
发明人： Thomas Nowak , Ian Latchford , Tsutomu Tanaka , Bok Heon Kim , Ping Xu , Jason Foster , Heath B. DeShong , Martin Seamons
IPC分类号： B08B7/00 , C23C16/44 , C23C16/52 , H01J37/32 , B08B6/00 , H01L21/306
CPC分类号： H01J37/32862 , B08B7/00 , C23C16/4405 , C23C16/52 , Y10S134/902
摘要： Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.
摘要翻译：半导体加工设备清洗方法及装置。该装置包括耦合到待清洁的半导体处理室的局部和远程气体离解器。所述方法包括将前体气体引入到远离解离器中，其中气体被解离并将一部分解离的气体引入室中。在引入室之前重新结合的解离气体的另一部分也被引入室中，在那里再次解离。解离的气体与室内的污染物结合，并与污染物一起从室中排出。

7. 发明授权

US08778813B2 Confined process volume PECVD chamber 有权
标题翻译：密闭过程体积PECVD室
公开(公告)号：US08778813B2
公开(公告)日：2014-07-15
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , H01J37/32 , C23C16/46 , C23C16/509 , H01L21/67 , H01L21/30 , H01L21/42 , C23C16/00 , B05C11/11
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译：提供了一种用于等离子体处理衬底的装置。该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。电极也耦合到电源。衬底支撑件形成有允许很少偏离平行度的刚度。屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。泵送气室位于基板支撑处理位置下方并与其间隔开。

8. 发明授权

US08492170B2 UV assisted silylation for recovery and pore sealing of damaged low K films 有权
标题翻译： UV辅助甲硅烷基化用于恢复和损坏的低K膜的孔密封
公开(公告)号：US08492170B2
公开(公告)日：2013-07-23
申请号：US13093351
申请日：2011-04-25
申请人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
发明人： Bo Xie , Alexandros T. Demos , Kang Sub Yim , Thomas Nowak , Kelvin Chan
IPC分类号： H01L21/30
CPC分类号： H01L21/3105 , H01L21/02203 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/76814 , H01L21/76825 , H01L21/76826
摘要： Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
摘要翻译：提供修复损坏的低k膜的方法。在薄膜的处理期间，例如在蚀刻，灰化和平坦化期间，低k膜的损伤发生。低k膜的处理导致水存储在膜的孔中，并进一步在低k膜结构中形成亲水性化合物。包含紫外线（UV）辐射和甲硅烷基化合物的修复过程从孔中除去水分，并从低k膜结构中进一步除去亲水性化合物。

9. 发明申请

US20120258259A1 APPARATUS AND METHOD FOR UV TREATMENT, CHEMICAL TREATMENT, AND DEPOSITION 审中-公开
标题翻译：紫外线处理，化学处理和沉积的装置和方法
公开(公告)号：US20120258259A1
公开(公告)日：2012-10-11
申请号：US13440720
申请日：2012-04-05
申请人： Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
发明人： Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
IPC分类号： C23C16/455 , C23C16/46 , C23C16/458
CPC分类号： C23C16/56 , C23C16/0272 , C23C16/4401 , C23C16/4404 , C23C16/45565 , C23C16/54
摘要： Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.
摘要翻译：本发明的实施例提供了用于在相同的室中进行UV处理和化学处理和/或沉积的装置和方法。本发明的一个实施例提供了一种处理室，其包括设置在位于处理室的内部体积中的基板支撑件上方的UV透明气体分配喷头，设置在UV透明气体分配喷头上方的UV透明窗口和设置在UV透明气体分配喷头上的UV单元在内容之外。 UV单元被配置为通过UV透明窗口和UV透明气体分配喷头将UV光引向基板支撑。

10. 发明申请

US20120129275A1 DUAL-BULB LAMPHEAD CONTROL METHODOLOGY 有权
标题翻译：双通道灯泡控制方法
公开(公告)号：US20120129275A1
公开(公告)日：2012-05-24
申请号：US13011687
申请日：2011-01-21
申请人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
发明人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
IPC分类号： H01L21/26 , H05B37/02
CPC分类号： H05B41/3921 , H01L21/67115 , H05B41/3922
摘要： The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.
摘要翻译：本发明一般涉及控制UV灯输出以增加辐照度均匀性的方法。方法通常包括确定室内的基线辐照度，确定对应于第一灯和第二灯的衬底上的相对辐照度，以及基于相对辐照度和基线辐照度确定校正或补偿因子。然后通过使用校正或补偿因子的闭环控制来调节灯，以将灯单独调节到期望的输出。在将灯调节到期望的输出之前，灯可以可选地被调整为相等的辐照度。闭环控制确保从基板到基板的工艺均匀性。辐照度测量和校正或补偿因素允许由于室部件劣化，腔室部件更换或腔室清洁而调节灯具设定点。

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