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1. 发明申请

US20050196971A1 Hardware development to reduce bevel deposition 审中-公开
标题翻译：硬件开发减少斜面沉积
公开(公告)号：US20050196971A1
公开(公告)日：2005-09-08
申请号：US11043724
申请日：2005-01-26
申请人： Soovo Sen , Mark Fodor , Visweswaren Sivaramakrishnan , Junting Liu
发明人： Soovo Sen , Mark Fodor , Visweswaren Sivaramakrishnan , Junting Liu
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/509 , H01L21/31 , H01L21/469 , H01L21/76
CPC分类号： C23C16/4585 , C23C16/45521 , C23C16/5096
摘要： Embodiments in accordance with the present invention relate to various techniques which may be employed alone or in combination, to reduce or eliminate the deposition of material on the bevel of a semiconductor workpiece. In one approach, a shadow ring overlies the edge of the substrate to impede the flow of gases to bevel regions. The geometric feature at the edge of the shadow ring directs the flow of gases toward the wafer in order to maintain thickness uniformity across the wafer while shadowing the edge. In another approach, a substrate heater/support is configured to flow purge gases to the edge of a substrate being supported. These purge gases prevent process gases from reaching the substrate edge and depositing material on bevel regions.
摘要翻译：根据本发明的实施例涉及可以单独使用或组合使用以减少或消除材料在半导体工件的斜面上的沉积的各种技术。在一种方法中，阴影环覆盖在衬底的边缘上以阻止气体流向斜面区域。阴影环边缘处的几何特征将气体流引导到晶片，以便在遮蔽边缘的同时保持晶片的厚度均匀性。在另一种方法中，衬底加热器/支撑件构造成将净化气体流动到被支撑的衬底的边缘。这些吹扫气体可防止工艺气体到达衬底边缘并将材料沉积在斜面区域上。

2. 发明授权

US06187072B1 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions 失效
标题翻译：从底物处理设备排放物减少全氟化合物气体的方法和装置
公开(公告)号：US06187072B1
公开(公告)日：2001-02-13
申请号：US08741272
申请日：1996-10-30
申请人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
发明人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
IPC分类号： B01D4624
CPC分类号： H01J37/32844 , B01D45/06 , B01D53/32 , B01D53/46 , B01D2257/206 , B01D2259/818 , B01J19/08 , B01J19/088 , B01J19/126 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J2237/022 , H05H1/46 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y02P70/605
摘要： An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.
摘要翻译：用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。该装置的一个实施例包括硅滤波器和等离子体产生系统。等离子体发生系统从流出的PFC气体形成等离子体。来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。另一实施例包括等离子体产生系统和颗粒捕集和收集系统。颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

3. 发明授权

US10227695B2 Shadow ring for modifying wafer edge and bevel deposition 有权
公开(公告)号：US10227695B2
公开(公告)日：2019-03-12
申请号：US12974365
申请日：2010-12-21
申请人： Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
发明人： Dale R. Du Bois , Mohamad A. Ayoub , Robert Kim , Amit Bansal , Mark Fodor , Binh Nguyen , Siu F. Cheng , Hang Yu , Chiu Chan , Ganesh Balasubramanian , Deenesh Padhi , Juan Carlos Rocha
IPC分类号： C23C14/04 , C23C16/04 , C23C16/44 , C23C16/455 , C23C16/458 , C30B25/12 , H01J37/32 , H01J37/34 , H01L21/687
摘要： Embodiments of the invention contemplate a shadow ring that provides increased or decreased and more uniform deposition on the edge of a wafer. By removing material from the top and/or bottom surfaces of the shadow ring, increased edge deposition and bevel coverage can be realized. In one embodiment, the material on the bottom surface is reduced by providing a recessed slot on the bottom surface. By increasing the amount of material of the shadow ring, the edge deposition and bevel coverage is reduced. Another approach to adjusting the deposition at the edge of the wafer includes increasing or decreasing the inner diameter of the shadow ring. The material forming the shadow ring may also be varied to change the amount of deposition at the edge of the wafer.

4. 发明申请

US20050150452A1 Process kit design for deposition chamber 审中-公开
标题翻译：沉积室的工艺套件设计
公开(公告)号：US20050150452A1
公开(公告)日：2005-07-14
申请号：US10757021
申请日：2004-01-14
申请人： Soovo Sen , Mark Fodor , Martin Seamons , Priya Kulkarni , Visweswaren Sivaramakrishnan , Sudha Rathi , Tsutomu Shimayama , Thomas Nowak , Wendy Yeh
发明人： Soovo Sen , Mark Fodor , Martin Seamons , Priya Kulkarni , Visweswaren Sivaramakrishnan , Sudha Rathi , Tsutomu Shimayama , Thomas Nowak , Wendy Yeh
IPC分类号： C23C16/44 , C30B25/14 , C23C16/00
CPC分类号： C23C16/4412
摘要： The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner configured to be placed within the processing region of the processing chamber, and a C-channel liner configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.
摘要翻译：本发明提供了一种用于半导体处理室的处理套件。处理室是真空处理室，其包括限定内部处理区域的室主体。处理区域接收用于处理的基板，并且还支持处理套件的设备件。该处理套件包括构造成放置在处理室的处理区域内的泵送衬套，以及构造成沿着泵送衬套的外径放置的C形通道衬套。泵送衬管和C通道衬管具有新颖的互锁特征，其设计用于抑制来自处理区域的处理或清洁气体的寄生泵送。本发明还提供了一种具有改进的处理工具的半导体处理室，例如所述的套件。在一种布置中，室是串联处理室。

5. 发明授权

US6098568A Mixed frequency CVD apparatus 失效
标题翻译：混合频率CVD装置
公开(公告)号：US6098568A
公开(公告)日：2000-08-08
申请号：US980520
申请日：1997-12-01
申请人： Sebastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
发明人： Sebastien Raoux , Mandar Mudholkar , William N. Taylor , Mark Fodor , Judy Huang , David Silvetti , David Cheung , Kevin Fairbairn
IPC分类号： H05H1/46 , C23C16/505 , C23C16/509 , C23C16/517 , H01J37/32 , H01L21/31 , C23C16/00
CPC分类号： H01J37/32174 , C23C16/5096 , C23C16/517 , H01J37/32082
摘要： A substrate processing system that includes a ceramic substrate holder having an RF electrode embedded within the substrate holder and a gas inlet manifold spaced apart from the substrate holder. The gas inlet manifold supplies one or more process gases through multiple conical holes to a reaction zone of a substrate processing chamber within the processing system and also acts as a second RF electrode. Each conical hole has an outlet that opens into the reaction zone and an inlet spaced apart from the outlet that is smaller in diameter than said outlet. A mixed frequency RF power supply is connected to the substrate processing system with a high frequency RF power source connected to the gas inlet manifold electrode and a low frequency RF power source connected to the substrate holder electrode. An RF filter and matching network decouples the high frequency waveform from the low frequency waveform. Such a configuration allows for an enlarged process regime and provides for deposition of films, including silicon nitride films, having physical characteristics that were previously unattainable.
摘要翻译：一种衬底处理系统，其包括陶瓷衬底保持器，其具有嵌入衬底保持器内的RF电极和与衬底保持器间隔开的气体入口歧管。气体入口歧管将一个或多个处理气体通过多个锥形孔提供到处理系统内的衬底处理室的反应区，并且还用作第二RF电极。每个锥形孔具有通向反应区的出口和与出口间隔开的直径小于所述出口的入口。混合频率RF电源与连接到气体入口歧管电极的高频RF电源和连接到衬底保持器电极的低频RF电源连接到衬底处理系统。 RF滤波器和匹配网络将高频波形与低频波形分离。这种构造允许扩大的工艺方案并且提供具有先前无法实现的物理特性的膜（包括氮化硅膜）的沉积。

6. 发明申请

US20060272774A1 Substrate support with clamping electrical connector 有权
标题翻译：带夹紧电连接器的基板支撑
公开(公告)号：US20060272774A1
公开(公告)日：2006-12-07
申请号：US11145258
申请日：2005-06-03
申请人： Kazutoshi Maehara , Visweswaren Sivaramakrishnan , Kentaro Wada , Mark Fodor , Andrzei Kaszuba
发明人： Kazutoshi Maehara , Visweswaren Sivaramakrishnan , Kentaro Wada , Mark Fodor , Andrzei Kaszuba
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： C23C16/4586 , H01L21/68757
摘要： A substrate support comprises a ceramic disc with an electrode that is chargeable through an electrode terminal. An electrical connector connects an external power source to the electrode terminal. The electrical connector has a pair of opposing pincer arms, a groove sized to fit around the electrode terminal, and a pair of through holes to receive a tightening assembly capable of tightening the opposing pincer arms about the electrode terminal.
摘要翻译：衬底支撑件包括具有可通过电极端子充电的电极的陶瓷盘。电连接器将外部电源连接到电极端子。电连接器具有一对相对的钳形臂，尺寸适于围绕电极端子的凹槽和一对通孔，用于接收能够围绕电极端子紧固相对的夹持臂的紧固组件。

7. 发明申请

US20050078953A1 Substrate heater assembly 有权
标题翻译：基板加热器总成
公开(公告)号：US20050078953A1
公开(公告)日：2005-04-14
申请号：US10684054
申请日：2003-10-10
申请人： Mark Fodor , Sophia Velastegui , Soovo Sen , Visweswaren Sivaramakrishnan , Peter Lee , Mario Silvetti
发明人： Mark Fodor , Sophia Velastegui , Soovo Sen , Visweswaren Sivaramakrishnan , Peter Lee , Mario Silvetti
IPC分类号： C23C16/458 , C23C16/46 , H01L21/687 , F26B3/30 , F26B19/00 , H01L21/20
CPC分类号： C23C16/4585 , C23C16/46 , H01L21/68735
摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.
摘要翻译：提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

8. 发明授权

US06517913B1 Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions 失效
标题翻译：从底物处理设备排放物减少全氟化合物气体的方法和装置
公开(公告)号：US06517913B1
公开(公告)日：2003-02-11
申请号：US09632502
申请日：2000-08-03
申请人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
发明人： David Cheung , Sebastien Raoux , Judy H. Huang , William N. Taylor, Jr. , Mark Fodor , Kevin Fairbairn
IPC分类号： C23C1644
CPC分类号： H01J37/32844 , B01D45/06 , B01D53/32 , B01D53/46 , B01D2257/206 , B01D2259/818 , B01J19/08 , B01J19/088 , B01J19/126 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , H01J37/3244 , H01J2237/022 , H05H1/46 , H05H2001/4622 , H05H2001/4667 , H05H2245/1215 , Y02C20/30 , Y02P70/605
摘要： An apparatus for converting PFC gases exhausted from semiconductor processing equipment to less harmful, non-PFC gases. One embodiment of the apparatus includes a silicon filter and a plasma generation system. The plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with silicon and/or oxygen in the filter and convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts. Another embodiment includes a plasma generation system and a particle trapping and collection system. The particle trapping and collection system traps silicon containing residue from deposition processes that produces such residue, and the plasma generation system forms a plasma from the effluent PFC gases. Constituents from the plasma react with the collected residue to convert the effluent PFC gases to less harmful, non-PFC gaseous products and byproducts.
摘要翻译：用于将从半导体处理设备排出的PFC气体转化为较少有害的非PFC气体的设备。该装置的一个实施例包括硅滤波器和等离子体产生系统。等离子体发生系统从流出的PFC气体形成等离子体。来自等离子体的成分与过滤器中的硅和/或氧反应，并将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。另一实施例包括等离子体产生系统和颗粒捕集和收集系统。颗粒捕集和收集系统从产生这种残余物的沉积过程中捕集含硅残渣，等离子体产生系统从流出的PFC气体形成等离子体。来自等离子体的成分与收集的残余物反应，将流出的PFC气体转化为不太有害的非PFC气体产物和副产物。

9. 发明授权

US06689930B1 Method and apparatus for cleaning an exhaust line in a semiconductor processing system 有权
标题翻译：用于清洁半导体处理系统中的排气管线的方法和装置
公开(公告)号：US06689930B1
公开(公告)日：2004-02-10
申请号：US09608577
申请日：2000-06-30
申请人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastion Raoux , Mark Fodor
发明人： Ben Pang , David Cheung , William N. Taylor, Jr. , Sebastion Raoux , Mark Fodor
IPC分类号： B09B300
CPC分类号： H01J37/32862 , B01J19/249 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2467 , B01J2219/247 , B01J2219/2474 , B01J2219/2475 , B01J2219/2487 , B01J2219/2493 , B01J2219/2496 , C23C16/4405 , C23C16/4412 , Y02C20/30 , Y02P70/605
摘要： An apparatus for preventing particulate matter and residue build-up within a vacuum exhaust line of a semiconductor processing device. The apparatus uses RF energy to form excite the constituents of particulate matter exhausted from a semiconductor processing chamber into a plasma state such that the constituents react to form gaseous products that may be pumped through the vacuum line. The apparatus may include a collection chamber structured and arranged to collect particulate matter flowing through the apparatus and inhibiting egress of the particulate matter from the apparatus. The apparatus may further include an electrostatic collector to enhance particle collection in the collection chamber and to further inhibit egress of the particulate matter.
摘要翻译：一种用于防止半导体处理装置的真空排气管线内的颗粒物质和残渣积聚的装置。该装置使用RF能量来形成从半导体处理室排出的颗粒物质的成分进入等离子体状态，使得这些组分反应以形成可被泵送通过真空管线的气态产物。该装置可以包括收集室，该收集室被构造和布置成收集流过该装置的颗粒物质并且阻止颗粒物质从装置中流出。该装置还可以包括静电收集器以增强收集室中的颗粒收集并进一步抑制颗粒物质的排出。

10. 发明授权

US06506994B2 Low profile thick film heaters in multi-slot bake chamber 失效
标题翻译：低槽厚膜加热器在多槽烘烤室
公开(公告)号：US06506994B2
公开(公告)日：2003-01-14
申请号：US09882769
申请日：2001-06-15
申请人： Yen-Kun Victor Wang , Mark Fodor , Chen-An Chen , Himanshu Pokharna , Son T. Nguyen , Kelly Fong , Inna Shmurun
发明人： Yen-Kun Victor Wang , Mark Fodor , Chen-An Chen , Himanshu Pokharna , Son T. Nguyen , Kelly Fong , Inna Shmurun
IPC分类号： F27B514
CPC分类号： H01L21/67748 , C23C16/0209 , C23C16/54 , C30B25/10 , C30B31/14 , H01L21/68
摘要： A heating chamber assembly for heating or maintaining the temperature of at least one wafer, employs thick film heater plates stacked at an appropriate distance to form a slot between each pair of adjacent heater plate surfaces. The heating chamber assembly may be employed adjacent one or more processing chambers to form a preheat station separate from the processing chambers, or may be incorporated in the load lock of one or more such processing chambers. The thick film heater plates are more efficient and have a better response time than conventional heat plates. A chamber surrounding the stack of heater plates is pressure sealable and nay include a purge gas inlet for supply purge gas thereto under pressure. A door to the chamber opens to allow wafers to be inserted or removed and forms a pressure seal upon closing. The slots in the stack are alignable with the door for loading and unloading of wafers. The stack is mounted on a drive shaft that extends through the chamber where it interfaces with a drive that traverses the drive shaft in and out of the chamber to align various slots as desired.
摘要翻译：用于加热或保持至少一个晶片的温度的加热室组件使用以适当距离堆叠的厚膜加热器板，以在每对相邻的加热器板表面之间形成狭槽。加热室组件可以在一个或多个处理室附近使用以形成与处理室分离的预热站，或者可以结合在一个或多个这样的处理室的装载锁中。厚膜加热器板比传统加热板更有效，响应时间更长。围绕堆叠的加热器板的室是可压力密封的，并且不包括用于在压力下向其供应吹扫气体的吹扫气体入口。通向室的门打开以允许晶片被插入或移除，并且在关闭时形成压力密封。堆叠中的槽可与门对准，用于装载和卸载晶片。该堆叠安装在驱动轴上，该驱动轴延伸穿过该室，在该驱动轴处与驱动轴相接合，该驱动器穿过驱动轴进出腔室，以根据需要对准各种槽。

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