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1. 发明授权

US06329297B1 Dilute remote plasma clean 有权
标题翻译：稀释远程等离子体清洁
公开(公告)号：US06329297B1
公开(公告)日：2001-12-11
申请号：US09553694
申请日：2000-04-21
申请人： Kenneth E. Balish , Thomas Nowak , Tsutomu Tanaka , Mark Beals
发明人： Kenneth E. Balish , Thomas Nowak , Tsutomu Tanaka , Mark Beals
IPC分类号： H01L2100
CPC分类号： H01J37/3244 , H01J2237/335 , Y10S156/916
摘要： A method and apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. A plasma formed in a remote plasma generator (27) is flown through a tube (62) to a plenum (60) where it is diluted to form a plasma mixture before flowing the plasma mixture into a processing chamber (15). The plasma mixture is used to clean deposits from the interior surfaces of the processing chamber, or can be used to perform an etch step on a process wafer within the processing chamber. In one embodiment, a plasma formed from NF3 is diluted with N2 to etch residue from the surfaces of a processing chamber used to deposit silicon oxide glass. Diluting the plasma increased the etching rate and made the etching rate more uniform across the diameter of the processing chamber.
摘要翻译：一种用于增强在远程等离子体发生器中形成的等离子体的蚀刻特性的方法和装置。形成在远程等离子体发生器（27）中的等离子体通过管（62）流到增压室（60），在其中稀释以形成等离子体混合物，然后将等离子体混合物流入处理室（15）。等离子体混合物用于从处理室的内表面清洁沉积物，或者可以用于在处理室内的处理晶片上进行蚀刻步骤。在一个实施方案中，用N 2稀释由NF 3形成的等离子体，以从用于沉积氧化硅玻璃的处理室的表面蚀刻残留物。稀释等离子体增加了蚀刻速率，并且使蚀刻速率在处理室的直径上更均匀。

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