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1. 发明申请

US20160145742A1 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
公开(公告)号：US20160145742A1
公开(公告)日：2016-05-26
申请号：US14552273
申请日：2014-11-24
申请人： Karthik Janakiraman , Thomas NOWAK , Juan Carlos ROCHA-ALVAREZ , Mark FODOR , Dale R. DU BOIS , Amit Kumar BANSAL , Mohamad A. AYOUB , Eller Y. JUCO , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
发明人： Karthik Janakiraman , Thomas NOWAK , Juan Carlos ROCHA-ALVAREZ , Mark FODOR , Dale R. DU BOIS , Amit Kumar BANSAL , Mohamad A. AYOUB , Eller Y. JUCO , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
IPC分类号： C23C16/455 , H01J37/32 , C23C16/503 , C23C16/505 , C23C16/458 , C23C16/44
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.

2. 发明授权

US08778813B2 Confined process volume PECVD chamber 有权
标题翻译：密闭过程体积PECVD室
公开(公告)号：US08778813B2
公开(公告)日：2014-07-15
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： H01L21/31 , H01L21/469 , H01L21/00 , H01J37/32 , C23C16/46 , C23C16/509 , H01L21/67 , H01L21/30 , H01L21/42 , C23C16/00 , B05C11/11
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译：提供了一种用于等离子体处理衬底的装置。该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。电极也耦合到电源。衬底支撑件形成有允许很少偏离平行度的刚度。屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。泵送气室位于基板支撑处理位置下方并与其间隔开。

3. 发明申请

US20130177706A1 METHOD FOR SEASONING UV CHAMBER OPTICAL COMPONENTS TO AVOID DEGRADATION 审中-公开
标题翻译：用于分解紫外线光学元件以避免降解的方法
公开(公告)号：US20130177706A1
公开(公告)日：2013-07-11
申请号：US13719047
申请日：2012-12-18
申请人： Sanjeev Baluja , Alexandros T. Demos , Bo Xie , Juan Carlos Rocha-Alvarez
发明人： Sanjeev Baluja , Alexandros T. Demos , Bo Xie , Juan Carlos Rocha-Alvarez
IPC分类号： B05D3/06
CPC分类号： B05D3/066 , C23C16/4404 , C23C16/4405
摘要： Methods for depositing a carbon-based seasoning layer on exposed surfaces of the optical components within a UV processing chamber are disclosed. In one embodiment, the method includes flowing a carbon-containing precursor radially inwardly across exposed surfaces of optical components within the thermal processing chamber from a circumference of the optical components, exposing the carbon-containing precursor to a thermal radiation emitted from a heating source to form a carbon-based seasoning layer on the exposed surfaces of the optical components, exposing the carbon-based seasoning layer to ozone, wherein the ozone is introduced into the processing chamber by flowing the ozone radially inwardly across exposed surfaces of optical components from the circumference of the optical components, heating the optical components to a temperature of about 400° C. or above while flowing the ozone to remove the carbon-based seasoning layer from exposed surfaces of the optical components.
摘要翻译：公开了在UV处理室内的光学部件的暴露表面上沉积碳基调味剂层的方法。在一个实施例中，该方法包括使含碳前驱体从光学部件的圆周径向向内流过热处理室内的光学部件的暴露表面，将含碳前体暴露于从加热源发射的热辐射至在光学部件的暴露表面上形成碳基调味剂层，将碳基调味剂层暴露于臭氧，其中臭氧通过径向向内流过来自圆周的光学部件的暴露表面而将臭氧引入处理室的光学部件，将光学部件加热至约400℃以上的温度，同时使臭氧流动，以从光学部件的露出表面除去碳基调味剂层。

4. 发明申请

US20130161629A1 ZERO SHRINKAGE SMOOTH INTERFACE OXY-NITRIDE AND OXY-AMORPHOUS-SILICON STACKS FOR 3D MEMORY VERTICAL GATE APPLICATION 审中-公开
标题翻译：用于三维存储垂直门应用的零收缩平滑界面氧化氮和氧 - 非晶硅层
公开(公告)号：US20130161629A1
公开(公告)日：2013-06-27
申请号：US13337749
申请日：2011-12-27
申请人： XINHAI HAN , NAGARAJAN RAJAGOPALAN , GUANGCHI XUAN , JIANHUA ZHOU , JIGANG LI , SHAHID SHAIKH , PATRICK REILLY , THOMAS NOWAK , JUAN CARLOS ROCHA-ALVAREZ , HEUNG LAK PARK , BOK HOEN KIM
发明人： XINHAI HAN , NAGARAJAN RAJAGOPALAN , GUANGCHI XUAN , JIANHUA ZHOU , JIGANG LI , SHAHID SHAIKH , PATRICK REILLY , THOMAS NOWAK , JUAN CARLOS ROCHA-ALVAREZ , HEUNG LAK PARK , BOK HOEN KIM
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/66833 , C23C16/24 , C23C16/345 , C23C16/401 , C23C16/505 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L27/11582 , H01L29/7926
摘要： Methods are provided for depositing a stack of film layers for use in vertical gates for 3D memory devices, by depositing a sacrificial nitride film layer at a sacrificial film deposition temperature greater than about 550° C.; depositing an oxide film layer over the nitride film layer, at an oxide deposition temperature of about 600° C. or greater; repeating the above steps to deposit a film stack having alternating layers of the sacrificial films and the oxide films; forming a plurality of holes in the film stack; and depositing polysilicon in the plurality of holes in the film stack at a polysilicon process temperature of about 700° C. or greater, wherein the sacrificial film layers and the oxide film layers experience near zero shrinkage during the polysilicon deposition. Flash drive memory devices may also be made by these methods.
摘要翻译：提供了用于通过在大于约550℃的牺牲膜沉积温度下沉积牺牲氮化物膜层来沉积用于3D存储器件的垂直栅极中的用于沉积一叠薄膜层的方法; 在氧化物沉积温度为约600℃或更高时在氮化物膜层上沉积氧化膜层; 重复上述步骤以沉积具有交替层的牺牲膜和氧化物膜的膜堆叠; 在薄膜叠层中形成多个孔; 以及在约700℃或更高的多晶硅工艺温度下在所述膜堆叠中的所述多个孔中沉积多晶硅，其中所述牺牲膜层和所述氧化物膜层在所述多晶硅沉积期间经历接近零收缩。也可以通过这些方法制造闪存驱动器存储器件。

5. 发明申请

US20120258259A1 APPARATUS AND METHOD FOR UV TREATMENT, CHEMICAL TREATMENT, AND DEPOSITION 审中-公开
标题翻译：紫外线处理，化学处理和沉积的装置和方法
公开(公告)号：US20120258259A1
公开(公告)日：2012-10-11
申请号：US13440720
申请日：2012-04-05
申请人： Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
发明人： Amit Bansal , Dale R. Du Bois , Juan Carlos Rocha-Alvarez , Sanjeev Baluja , Scott A. Hendrickson , Thomas Nowak
IPC分类号： C23C16/455 , C23C16/46 , C23C16/458
CPC分类号： C23C16/56 , C23C16/0272 , C23C16/4401 , C23C16/4404 , C23C16/45565 , C23C16/54
摘要： Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.
摘要翻译：本发明的实施例提供了用于在相同的室中进行UV处理和化学处理和/或沉积的装置和方法。本发明的一个实施例提供了一种处理室，其包括设置在位于处理室的内部体积中的基板支撑件上方的UV透明气体分配喷头，设置在UV透明气体分配喷头上方的UV透明窗口和设置在UV透明气体分配喷头上的UV单元在内容之外。 UV单元被配置为通过UV透明窗口和UV透明气体分配喷头将UV光引向基板支撑。

6. 发明申请

US20120132618A1 METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER 有权
标题翻译：用于调节UV室中的水处理轮廓的方法和装置
公开(公告)号：US20120132618A1
公开(公告)日：2012-05-31
申请号：US13301558
申请日：2011-11-21
申请人： SANJEEV BALUJA , Juan Carlos Rocha-Alvarez , Alexandros T. Demos
发明人： SANJEEV BALUJA , Juan Carlos Rocha-Alvarez , Alexandros T. Demos
IPC分类号： C23F1/08 , G02B5/22 , C23F1/00 , C23C16/48 , C08J7/18
CPC分类号： G02B5/22 , G02B5/208 , H01L21/67115
摘要： A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer.
摘要翻译：提供了一种用于在衬底的表面上提供均匀的UV辐射辐照度分布的方法和装置。在一个实施例中，衬底处理工具包括限定处理区域的处理室，用于支撑处理区域内的衬底的衬底支撑件，与衬底支撑件间隔开并且被配置成向衬底支撑件发射紫外线辐射的紫外线（UV）辐射源位于基板支撑件上的基板和位于UV辐射源和基板支撑件之间的透光窗口，透光窗口具有涂覆在其上的光学膜层。在一个示例中，光学膜层在径向上具有不均匀的厚度分布，其中在透光窗的周边区域处的光学膜层的厚度比在光学膜层的中心区域处的厚度更厚。

7. 发明申请

US20120129275A1 DUAL-BULB LAMPHEAD CONTROL METHODOLOGY 有权
标题翻译：双通道灯泡控制方法
公开(公告)号：US20120129275A1
公开(公告)日：2012-05-24
申请号：US13011687
申请日：2011-01-21
申请人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
发明人： Yao-Hung Yang , Abhijit Kangude , Sanjeev Baluja , Michael Martinelli , Liliya Krivulina , Thomas Nowak , Juan Carlos Rocha-Alvarez , Scott Hendrickson
IPC分类号： H01L21/26 , H05B37/02
CPC分类号： H05B41/3921 , H01L21/67115 , H05B41/3922
摘要： The present invention generally relates to methods of controlling UV lamp output to increase irradiance uniformity. The methods generally include determining a baseline irradiance within a chamber, determining the relative irradiance on a substrate corresponding to a first lamp and a second lamp, and determining correction or compensation factors based on the relative irradiances and the baseline irradiance. The lamps are then adjusted via closed loop control using the correction or compensation factors to individually adjust the lamps to the desired output. The lamps may optionally be adjusted to equal irradiances prior to adjusting the lamps to the desired output. The closed loop control ensures process uniformity from substrate to substrate. The irradiance measurement and the correction or compensation factors allow for adjustment of lamp set points due to chamber component degradation, chamber component replacement, or chamber cleaning.
摘要翻译：本发明一般涉及控制UV灯输出以增加辐照度均匀性的方法。方法通常包括确定室内的基线辐照度，确定对应于第一灯和第二灯的衬底上的相对辐照度，以及基于相对辐照度和基线辐照度确定校正或补偿因子。然后通过使用校正或补偿因子的闭环控制来调节灯，以将灯单独调节到期望的输出。在将灯调节到期望的输出之前，灯可以可选地被调整为相等的辐照度。闭环控制确保从基板到基板的工艺均匀性。辐照度测量和校正或补偿因素允许由于室部件劣化，腔室部件更换或腔室清洁而调节灯具设定点。

8. 发明申请

US20110294303A1 CONFINED PROCESS VOLUME PECVD CHAMBER 有权
标题翻译：限制过程体积PECVD室
公开(公告)号：US20110294303A1
公开(公告)日：2011-12-01
申请号：US13102846
申请日：2011-05-06
申请人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
发明人： Ramprakash Sankarakrishnan , Ganesh Balasubramanian , Juan Carlos Rocha-Alvarez , Dale R. Du Bois , Mark Fodor , Jianhua Zhou , Amit Bansal , Mohamad A. Ayoub , Shahid Shaikh , Patrick Reilly , Deenesh Padhi , Thomas Nowak
IPC分类号： C23C16/44 , H01L21/30 , C23C16/509
CPC分类号： H01L21/6719 , C23C16/46 , C23C16/5096 , H01J37/32495 , H01J37/32568 , H01J37/32651 , H01J37/32715
摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.
摘要翻译：提供了一种用于等离子体处理衬底的装置。该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。电极也耦合到电源。衬底支撑件形成有允许很少偏离平行度的刚度。屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。泵送气室位于基板支撑处理位置下方并与其间隔开。

9. 发明授权

US07777197B2 Vacuum reaction chamber with x-lamp heater 有权
标题翻译：带x灯加热器的真空反应室
公开(公告)号：US07777197B2
公开(公告)日：2010-08-17
申请号：US11425974
申请日：2006-06-22
申请人： Amir Al-Bayati , Lester A. D'Cruz , Alexandros T. Demos , Dale R. Dubois , Khaled A. Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Carlos Rocha-Alvarez , Ashish Shah , Takashi Shimizu
发明人： Amir Al-Bayati , Lester A. D'Cruz , Alexandros T. Demos , Dale R. Dubois , Khaled A. Elsheref , Naoyuki Iwasaki , Hichem M'Saad , Juan Carlos Rocha-Alvarez , Ashish Shah , Takashi Shimizu
IPC分类号： G01N23/00
CPC分类号： H01J37/317 , B23K15/00 , C23F4/00 , H01J37/026 , H01J37/20 , H01J2237/004 , H01J2237/0044 , H01J2237/2001 , H01J2237/304 , H01J2237/3156 , H01J2237/316 , H01J2237/3165 , H01L21/67115
摘要： Methods and apparatus for electron beam treatment of a substrate are provided. An electron beam apparatus that includes a vacuum chamber, at least one thermocouple assembly in communication with the vacuum chamber, a heating device in communication with the vacuum chamber, and combinations thereof are provided. In one embodiment, the vacuum chamber comprises an electron source wherein the electron source comprises a cathode connected to a high voltage source, an anode connected to a low voltage source, and a substrate support. In another embodiment, the vacuum chamber comprises a grid located between the anode and the substrate support. In one embodiment the heating device comprises a first parallel light array and a second light array positioned such that the first parallel light array and the second light array intersect. In one embodiment the thermocouple assembly comprises a temperature sensor made of aluminum nitride.
摘要翻译：提供了用于基板的电子束处理的方法和装置。提供了一种电子束装置，其包括真空室，至少一个与真空室连通的热电偶组件，与真空室连通的加热装置及其组合。在一个实施例中，真空室包括电子源，其中电子源包括连接到高电压源的阴极，连接到低电压源的阳极和衬底支撑件。在另一个实施例中，真空室包括位于阳极和基板支撑件之间的格栅。在一个实施例中，加热装置包括第一平行光阵列和第二光阵列，其定位成使得第一平行光阵列和第二光阵列相交。在一个实施例中，热电偶组件包括由氮化铝制成的温度传感器。

10. 发明申请

US20090236214A1 TUNABLE GROUND PLANES IN PLASMA CHAMBERS 审中-公开
标题翻译：等离子体燃烧室中的接地平台
公开(公告)号：US20090236214A1
公开(公告)日：2009-09-24
申请号：US12052431
申请日：2008-03-20
申请人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
发明人： Karthik Janakiraman , Thomas Nowak , Juan Carlos Rocha-Alvarez , Mark A. Fodor , Dale R. Du Bois , Amit Bansal , Mohamad Ayoub , Eller Y. Juco , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C16/45565 , C23C16/4412 , C23C16/458 , C23C16/4586 , C23C16/503 , C23C16/505 , C23C16/5096 , H01J37/32091 , H01J37/32165 , H01J37/32532 , H01J37/32541
摘要： An apparatus and method are provided for controlling the intensity and distribution of a plasma discharge in a plasma chamber. In one embodiment, a shaped electrode is embedded in a substrate support to provide an electric field with radial and axial components inside the chamber. In another embodiment, the face plate electrode of the showerhead assembly is divided into zones by isolators, enabling different voltages to be applied to the different zones. Additionally, one or more electrodes may be embedded in the chamber side walls.
摘要翻译：提供了一种用于控制等离子体室中的等离子体放电的强度和分布的装置和方法。在一个实施例中，成形电极嵌入在基板支撑件中以在腔室内提供具有径向和轴向分量的电场。在另一个实施例中，喷头组件的面板电极被隔离器分成区域，使不同的电压能够施加到不同的区域。此外，一个或多个电极可以嵌入在腔室侧壁中。

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