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1. 发明申请

US20060191482A1 Apparatus and method for processing wafer 审中-公开
标题翻译：晶圆处理装置及方法
公开(公告)号：US20060191482A1
公开(公告)日：2006-08-31
申请号：US11074717
申请日：2005-03-09
申请人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
发明人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
IPC分类号： C23C16/00
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
摘要翻译：提供能够在晶片内获得均匀的CD分布的晶片处理装置。晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和控制电脑。控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

2. 发明申请

US20060169671A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20060169671A1
公开(公告)日：2006-08-03
申请号：US11072305
申请日：2005-03-07
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/32137
摘要： To provide a plasma etching apparatus that achieves a high in-plane uniformity of the CD shift. A plasma etching apparatus includes: a process chamber 26 in which a plasma etching process is performed on a process target object 1; A first gas supply source 100 for supplying a first process gas; a second gas supply source 110 for supplying a second process gas; a first gas introduction area 42-1 having a first gas introduction port for introducing the first process gas into the process chamber 26; a second gas introduction area 42-2 having a second gas introduction port 3 for introducing the second process gas into the process chamber 26; flow controllers 102, 113 for adjusting the flow rates of the process gasses; and a gas flow divider 120 for dividing the process gas into a plurality of gas flows, in which the first gas introduction port and the second gas introduction port are provided substantially in the same plane, and the first gas introduction area 42-1 and the second gas introduction area 42-2 are separated from each other.
摘要翻译：提供一种实现CD偏移的高平面内均匀性的等离子体蚀刻装置。等离子体蚀刻装置包括：对处理对象物1进行等离子体蚀刻处理的处理室26; 用于供应第一处理气体的第一气体供应源100; 用于供应第二处理气体的第二气体供应源110; 具有用于将第一处理气体引入到处理室26中的第一气体导入口的第一气体导入区域42-1; 具有用于将第二处理气体引入到处理室26中的第二气体导入口3的第二气体导入区域42-2; 流量控制器102,113，用于调节过程气体的流量; 以及用于将处理气体分成多个气流的气体分流器120，其中第一气体导入口和第二气体导入口基本上设置在同一平面上，第一气体导入区域42-1和第二气体导入区域42-2彼此分离。

3. 发明申请

US20070209759A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070209759A1
公开(公告)日：2007-09-13
申请号：US11501814
申请日：2006-08-10
申请人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
发明人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/3244
摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.
摘要翻译：为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

4. 外观设计

USD557226S1 Electrode cover for a plasma processing apparatus 有权
标题翻译：等离子体处理装置的电极盖
公开(公告)号：USD557226S1
公开(公告)日：2007-12-11
申请号：US29236981
申请日：2005-08-25
申请人： Takeo Uchino , Hiroyuki Shichida , Masakazu Isozaki , Tsunehiko Tsubone , Akitaka Makino
设计人： Takeo Uchino , Hiroyuki Shichida , Masakazu Isozaki , Tsunehiko Tsubone , Akitaka Makino

5. 发明授权

US08897906B2 Wafer processing based on sensor detection and system learning 有权
标题翻译：基于传感器检测和系统学习的晶片处理
公开(公告)号：US08897906B2
公开(公告)日：2014-11-25
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： H01L21/68 , H01L21/677
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

6. 发明授权

US08460467B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08460467B2
公开(公告)日：2013-06-11
申请号：US13177076
申请日：2011-07-06
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元，用于向腔室供应气体的处理室。

7. 发明授权

US08286822B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08286822B2
公开(公告)日：2012-10-16
申请号：US12651701
申请日：2010-01-04
申请人： Susumu Tauchi , Akitaka Makino
发明人： Susumu Tauchi , Akitaka Makino
IPC分类号： B65D6/40 , B65D53/02 , B65D43/04
CPC分类号： H01L21/67126 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The invention provides a highly reliable plasma processing apparatus having stable sealing performance. The vacuum processing apparatus comprises a vacuum vessel having its inside decompressed; an opening disposed in a wall of the vacuum vessel for communicating the inside with the outside thereof and through which a sample to be processed is taken in and out; a valve body 701 disposed outside the wall for airtightly sealing or opening the opening; and a drive unit for driving the valve body to carry out the sealing or opening operation, the drive unit comprising a first member 705 coupled to an actuator 702 that moves along a substantially linear first direction as a result of operation of the actuator, a second member 706 coupled to the first member 705 that moves along a substantially linear second direction that intersects with the first direction, and the valve body 701 coupled to the second member that seals the opening as a result of the movement of the second member.
摘要翻译：本发明提供了具有稳定的密封性能的高度可靠的等离子体处理装置。真空处理装置包括其内部减压的真空容器; 设置在真空容器的壁中的开口，用于将内部与其外部连通，并且待处理样品通过该开口被取出; 阀体701，其设置在所述壁的外侧，用于气密地密封或打开所述开口; 驱动单元，用于驱动阀体进行密封或打开操作，驱动单元包括第一构件705，第一构件705联接到作为致动器的操作的结果沿基本线性的第一方向移动的致动器702;第二构件构件706，其联接到第一构件705，其沿着与第一方向相交的基本上线性的第二方向移动;以及阀体701，其联接到由于第二构件的移动而密封开口的第二构件。

8. 发明申请

US20080217295A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080217295A1
公开(公告)日：2008-09-11
申请号：US11683014
申请日：2007-03-07
申请人： SUSUMU TAUCHI , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
发明人： SUSUMU TAUCHI , Akitaka Makino , Seiichi Watanabe , Naoki Yasui
IPC分类号： C23F1/00
CPC分类号： C23F4/00 , G03F1/80 , H01J37/32522 , H01L21/67017 , H01L21/67109 , H01L21/6831
摘要： The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.
摘要翻译：本发明提供等离子体处理装置或等离子体处理方法，其可以以高精度和高效率蚀刻用于构成栅极结构的多层膜结构。一种等离子体处理方法，在对减压排出室117中的样品台112上的样品进行处理时，蚀刻0.1Pa以下的多层膜（包括高k和金属栅极），并且在样品台112中，通过使用用于压力调节并连接到处理室的压力计133和用于耗尽的主泵130进行调节。

9. 发明申请

US20050194093A1 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20050194093A1
公开(公告)日：2005-09-08
申请号：US10928259
申请日：2004-08-30
申请人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Hideki Kihara , Susumu Tauchi
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01L21/6719 , H01J37/32522 , H01L21/67126 , Y10S156/916
摘要： The present invention provides a vacuum processing apparatus which is small-sized and requires a small installation area. The vacuum processing apparatus includes a vacuum container which has a processing chamber inside thereof, wherein the pressure inside the processing chamber is reduced and plasma used for processing a sample is formed inside the processing chamber, a bed portion which is arranged below the vacuum container and stores a device for supplying electricity and electric signals used for processing inside the vacuum container, and a transport chamber which is connected with the vacuum container and includes a transport device for transporting the sample inside thereof. The vacuum processing apparatus further includes a connector portion which is mounted on the bed portion in a state that the connector portion faces a lower portion of the transport chamber, wherein the bed portion is configured to be detachably mounted on the vacuum processing apparatus in a state that the bed portion performs the connection and the disconnection at the connector portion.
摘要翻译：本发明提供一种小型化并且需要小的安装面积的真空处理装置。真空处理装置包括在其内部具有处理室的真空容器，其中处理室内部的压力减小，处理室内部形成用于处理样品的等离子体，布置在真空容器下方的床部，存储用于供电的设备和用于在真空容器内部进行处理的电信号;以及运送室，其与该真空容器连接并且包括用于在其内部运送样品的运送装置。真空处理装置还包括连接器部分，其在连接器部分面向传送室的下部的状态下安装在床部分上，其中，床部分被构造成在状态下可拆卸地安装在真空处理设备上床部分在连接器部分处执行连接和断开。

10. 发明授权

US5607510A Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US5607510A
公开(公告)日：1997-03-04
申请号：US394952
申请日：1995-02-27
申请人： Akitaka Makino , Naoyuki Tamura , Tetsunori Kaji
发明人： Akitaka Makino , Naoyuki Tamura , Tetsunori Kaji
IPC分类号： B01J3/02 , B01J19/08 , H01L21/00 , H01L21/205 , C23C16/02
CPC分类号： H01L21/67069 , Y10S438/935
摘要： To improve an actual exhaust speed, in a vacuum processing device for processing a work located in a vacuum processing chamber by using a processing gas introduced into the vacuum processing chamber, the vacuum processing device having means for introducing the processing gas into the vacuum processing chamber, means for controlling a gas flow of the processing gas, and means for exhausting the processing gas after the work is processed by the processing gas; the exhausting means comprises an exhaust pump, a buffer space extended in a direction substantially perpendicular to a center of the work with an extended area larger than a size of a suction port of the exhaust pump, and a gas outlet formed on a back side of a surface of the work to be processed, the gas outlet having a size substantially equal to or larger than the size of the suction port of the exhaust pump. Further, the exhaust arrangement can be provided at a shifted position so as to allow a work space beneath a work table.
摘要翻译：为了提高实际的排气速度，在真空处理装置中，通过使用引入到真空处理室中的处理气体来处理位于真空处理室中的工件的真空处理装置，该真空处理装置具有将处理气体引入真空处理室用于控制处理气体的气体流动的装置，以及在处理气体处理了工件之后排出处理气体的装置; 排气装置包括排气泵，在大致垂直于工件中心的方向延伸的缓冲空间，其延伸面积大于排气泵的吸入口的尺寸;以及气体出口，形成在排气泵的背面要处理的工件的表面，气体出口的尺寸基本上等于或大于排气泵的吸入口的尺寸。此外，排气装置可以设置在移动位置，以便允许工作台下方的工作空间。

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