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1. 发明申请

US20130053997A1 VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20130053997A1
公开(公告)日：2013-02-28
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： B25J9/10 , B25J13/08
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

2. 发明授权

US08897906B2 Wafer processing based on sensor detection and system learning 有权
标题翻译：基于传感器检测和系统学习的晶片处理
公开(公告)号：US08897906B2
公开(公告)日：2014-11-25
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： H01L21/68 , H01L21/677
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

3. 发明授权

US08569177B2 Plasma processing apparatus and plasma processing method 失效
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08569177B2
公开(公告)日：2013-10-29
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/302
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

4. 发明申请

US20130189800A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 失效
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20130189800A1
公开(公告)日：2013-07-25
申请号：US13570433
申请日：2012-08-09
申请人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
发明人： Tomohiro OHASHI , Akitaka Makino , Hiroho Kitada , Muneo Furuse , Tomoyuki Tamura
IPC分类号： H01L21/3065 , H01L21/66
CPC分类号： H01J37/32449
摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.
摘要翻译：提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器调节惰性气体的流量。当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力工艺气体供应管道的内壁蒸发。

5. 发明申请

US20070044916A1 Vacuum processing system 审中-公开
标题翻译：真空加工系统
公开(公告)号：US20070044916A1
公开(公告)日：2007-03-01
申请号：US11214951
申请日：2005-08-31
申请人： Masakazu Isozaki , Seiichiro Kanno , Hideki Kihara , Hiroho Kitada
发明人： Masakazu Isozaki , Seiichiro Kanno , Hideki Kihara , Hiroho Kitada
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/6831 , C23C4/02 , C23C28/00 , C23C28/04 , H01J37/32431 , H01J2237/2001
摘要： A ceramic film is formed by a spray method on a base material of an electrostatic attraction device. Electrode films for electrostatic attraction are formed by a spray method on a surface of the ceramic film. A ringular heater film is formed in a spray method between the electrode films in a radial direction of the electrode films. In addition, a ceramic film is formed by a spray method on upper surfaces of the electrode films and the heater film.
摘要翻译：通过喷雾法在静电吸引装置的基材上形成陶瓷膜。通过喷涂法在陶瓷膜的表面上形成用于静电吸引的电极膜。在电极膜的电极膜的径向上以喷射方式形成环形加热器膜。此外，通过喷涂法在电极膜和加热膜的上表面上形成陶瓷膜。

6. 发明申请

US20050193951A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050193951A1
公开(公告)日：2005-09-08
申请号：US10793782
申请日：2004-03-08
申请人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo Furuse , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/00 , C23F1/00
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译：本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体的材料并且包括Y 2 或其混合物作为其主要组分，其中R 1，R 2，R 3，R 3，R 3，R 3，

7. 发明申请

US20080314321A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20080314321A1
公开(公告)日：2008-12-25
申请号：US12203804
申请日：2008-09-03
申请人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
发明人： Muneo FURUSE , Masanori Kadotani , Masatsugu Arai , Hiroho Kitada
IPC分类号： C23C16/458
CPC分类号： H01L21/68757 , H01J37/32559
摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.
摘要翻译：本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体并包含Y 2 O 3，Yb 2 O 3或YF 3的材料，或它们的主要成分。

8. 发明申请

US20060157198A1 Member for plasma processing apparatus and plasma processing apparatus 审中-公开
标题翻译：等离子处理装置和等离子体处理装置的成员
公开(公告)号：US20060157198A1
公开(公告)日：2006-07-20
申请号：US11065084
申请日：2005-02-25
申请人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
发明人： Muneo Furuse , Masanori Kadotani , Hiroho Kitada , Shingo Kimura
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01J37/3255 , H01J37/32009
摘要： Provided is a plasma processing apparatus, which comprises, as a member facing plasma in a plasma processing chamber, a member composed of a material prepared by incorporating a conductive material in quartz or germanium which is an amorphous base material.
摘要翻译：提供了一种等离子体处理装置，其包括作为在等离子体处理室中面向等离子体的构件，由通过将石英或锗中的导电材料并入作为非晶基材而制备的材料构成的构件。

9. 发明授权

US08828257B2 Plasma processing apparatus and operation method thereof 有权
标题翻译：等离子体处理装置及其操作方法
公开(公告)号：US08828257B2
公开(公告)日：2014-09-09
申请号：US12379641
申请日：2009-02-26
申请人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
发明人： Hiroho Kitada , Kazunori Nakamoto , Yosuke Sakai
IPC分类号： H05H1/00 , H01L21/306 , C03C15/00 , C03C25/68 , C23F1/00 , H01J37/32 , H01L21/687
CPC分类号： H01L21/68742 , H01J37/32082 , H01J37/3244 , H01J2237/20
摘要： In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.
摘要翻译：在等离子体处理装置中，包括在真空容器中的处理室，以在压力降低的处理室中形成等离子体，处理室内部的下部的样品台，其上表面上加有待处理的晶片通过等离子体放置，样品台中的多个针在垂直方向上移动，使得销抵靠晶片的后侧，以将晶片上下移动到样品台的上表面上，并且多个形成在样品台的上表面中的开口，使得销在开口中移动，当晶片未放置在样品的上表面上时，气体通过开口从与开口连通的供应端口进入处理室阶段。

10. 发明申请

US20080023139A1 Plasma processing apparatus and plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20080023139A1
公开(公告)日：2008-01-31
申请号：US11512116
申请日：2006-08-30
申请人： Naoki Yasui , Hiroho Kitada
发明人： Naoki Yasui , Hiroho Kitada
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： H01L21/6833 , H01J2237/2001
摘要： The invention relates to a plasma processing apparatus and a plasma processing method and particularly relates to a plasma processing apparatus suitable for executing an etching processing of a work by using plasma.
摘要翻译：等离子体处理装置和等离子体处理方法技术领域本发明涉及等离子体处理装置和等离子体处理方法，特别涉及一种适用于通过使用等离子体执行工件的蚀刻处

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