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1. 外观设计

USD557226S1 Electrode cover for a plasma processing apparatus 有权
标题翻译：等离子体处理装置的电极盖
公开(公告)号：USD557226S1
公开(公告)日：2007-12-11
申请号：US29236981
申请日：2005-08-25
申请人： Takeo Uchino , Hiroyuki Shichida , Masakazu Isozaki , Tsunehiko Tsubone , Akitaka Makino
设计人： Takeo Uchino , Hiroyuki Shichida , Masakazu Isozaki , Tsunehiko Tsubone , Akitaka Makino

2. 发明申请

US20060191482A1 Apparatus and method for processing wafer 审中-公开
标题翻译：晶圆处理装置及方法
公开(公告)号：US20060191482A1
公开(公告)日：2006-08-31
申请号：US11074717
申请日：2005-03-09
申请人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
发明人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
IPC分类号： C23C16/00
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
摘要翻译：提供能够在晶片内获得均匀的CD分布的晶片处理装置。晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和控制电脑。控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

3. 发明授权

US5458687A Method of and apparatus for securing and cooling/heating a wafer 失效
标题翻译：用于固定和冷却/加热晶片的方法和设备
公开(公告)号：US5458687A
公开(公告)日：1995-10-17
申请号：US154078
申请日：1993-11-18
申请人： Hiroyuki Shichida , Naoyuki Tamura , Akitaka Makino
发明人： Hiroyuki Shichida , Naoyuki Tamura , Akitaka Makino
IPC分类号： C23C16/50 , C23C16/458 , C23C16/511 , C23F4/00 , H01J37/02 , H01L21/302 , H01L21/3065 , H01L21/683 , C23C16/00
CPC分类号： H01J37/3244 , C23C16/4586 , H01J37/026 , H01L21/6831 , H01J2237/0203 , H01J2237/2001
摘要： A wafer processing apparatus comprises a vacuum processing chamber, and a wafer holder disposed within the vacuum processing chamber to hold a wafer to be processed fixedly thereon by electrostatic attraction. A cooling or heating gas is supplied into the space between the surface of the wafer holder and the backside of a wafer set on the wafer holder to cool or heat the wafer. In case the electrostatic attraction disappears accidentally due to, for example, power failure, the cooling or heating gas in the space between the surface of the wafer holder and the backside of the wafer set on the wafer holder is discharged quickly upon the disappearance of the electrostatic attraction between the wafer holder and the wafer to prevent the wafer being caused to float and being dislocated by the pressure of the cooling or heating gas existing in the space between the surface of the wafer holder and the backside of the wafer.
摘要翻译：晶片处理装置包括真空处理室和设置在真空处理室内的晶片保持器，以通过静电吸引将待固化的晶片保持在其上。将冷却或加热气体供应到晶片保持器的表面和晶片保持器上设置的晶片的背面之间的空间中以冷却或加热晶片。在静电吸引由于例如电源故障而意外地消失的情况下，在晶片保持器的表面和晶片保持器上设置的晶片的背面之间的空间中的冷却或加热气体在消失时被快速放电晶片保持器和晶片之间的静电吸引，以防止晶片由于存在于晶片保持器的表面和晶片的背面之间的空间中的冷却或加热气体的压力而浮起而脱位。

4. 发明授权

US08100620B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08100620B2
公开(公告)日：2012-01-24
申请号：US12203168
申请日：2008-09-03
申请人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
发明人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
IPC分类号： H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/67196
摘要： A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.
摘要翻译：真空处理装置包括各自具有具有减压内部空间的处理室的真空处理容器，耦合到设置在其周围的真空容器并具有低压内部空间的真空转移容器，被输送的处理过的工件;大气转移容器，其连接到真空传送容器的前侧，并且其前表面上包括安装在其上的工作台，其中工件被接收在其中，用于将工件传送到内部空间中大气压力的位置调整机构，位于左右两端之一的大气输送容器内，用于调整工件的位置;以及调节器，其设置在该机器的下部与底面之间，流体被供给到真空处理容器。

5. 发明申请

US20090324367A1 VACUUM PROCESSING APPARATUS 有权
标题翻译：真空加工设备
公开(公告)号：US20090324367A1
公开(公告)日：2009-12-31
申请号：US12203168
申请日：2008-09-03
申请人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
发明人： Masakazu Isozaki , Akitaka Makino , Shingo Kimura , Minoru Yatomi
IPC分类号： H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/67196
摘要： A vacuum processing apparatus includes vacuum processing vessels each having a processing chamber with a pressure-reduced interior space, a vacuum transfer vessel which is coupled to the vacuum vessels disposed therearound and which has a low-pressure interior space in which a to-be-processed workpiece is conveyed, an atmospheric air transfer vessel which is coupled to the front side of the vacuum transfer vessel and which includes on its front face side cassette tables mounting thereon a cassette with the workpiece received therein for conveying the workpiece in an interior space under an atmospheric pressure, a position-aligning machine disposed within the atmospheric air transfer vessel at one of right and left ends for adjusting a position of the workpiece, and an adjuster disposed between lower part of this machine and a floor face for adjusting the supply of a fluid being fed to the vacuum processing vessels.
摘要翻译：真空处理装置包括各自具有具有减压内部空间的处理室的真空处理容器，耦合到设置在其周围的真空容器并具有低压内部空间的真空转移容器，被输送的处理过的工件;大气转移容器，其连接到真空传送容器的前侧，并且其前表面上包括安装在其上的工作台，其中工件被接收在其中，用于将工件传送到内部空间中大气压力的位置调整机构，位于左右两端的大气输送容器内，用于调整工件的位置;以及调节器，其配置在该机器的下部与底面之间，流体被供给到真空处理容器。

6. 发明申请

US20090165952A1 VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：真空加工设备
公开(公告)号：US20090165952A1
公开(公告)日：2009-07-02
申请号：US12039994
申请日：2008-02-29
申请人： Susumu Tauchi , Shingo Kimura , Minoru Yatomi , Masakazu Isozaki , Akitaka Makino
发明人： Susumu Tauchi , Shingo Kimura , Minoru Yatomi , Masakazu Isozaki , Akitaka Makino
IPC分类号： H01L21/306
CPC分类号： H01L21/6719
摘要： The invention provides a semiconductor manufacturing apparatus having a high productivity per installed area. In a vacuum processing apparatus provided with a plurality of cassettes on which a cassette is stored, a vacuum feed chamber arranged in a back face side of the atmospheric air feed chamber in a state of being coupled thereto, having a polygonal plane shape and structured such that the wafer is fed in a depressurized inner portion, and a plurality of vacuum processing chambers detachably coupled to a side surface of the vacuum feed chamber, arranged in adjacent thereto and processing the wafer fed to an inner portion from the vacuum feed chamber, a plurality of vacuum processing apparatuses includes a plurality of etching processing chamber carrying out an etching process of the wafer and at least one ashing processing chamber carrying out an ashing process of the wafer, the ashing processing chamber is coupled to a side surface in one of right and left sides as seen from the front face of the vacuum feed chamber, and the atmospheric air feed chamber is arranged so as to be biased to the one side to which the ashing processing chamber is coupled.
摘要翻译：本发明提供了一种具有每个安装面积的高生产率的半导体制造装置。在设置有多个盒体的真空处理装置中，盒子被存储在该真空处理装置上，一个真空进料腔室被布置在大气供给室的背面侧，处于与之相连的状态，具有多边形平面形状并被构造晶片被供给到减压内部，以及可拆卸地联接到真空进料室的侧表面的多个真空处理室，与真空进料室相邻布置并处理从真空进料室供给到内部的晶片，多个真空处理装置包括执行晶片的蚀刻处理的多个蚀刻处理室和进行晶片的灰化处理的至少一个灰化处理室，灰化处理室与右侧的一个侧面以及从真空进料室的前表面看到的左侧，大气供给室被布置成被偏压到t 灰色处理室与其相连的一侧。

7. 发明申请

US20070068626A1 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US20070068626A1
公开(公告)日：2007-03-29
申请号：US11512309
申请日：2006-08-30
申请人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
发明人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67126 , H01J37/32495 , H01J37/3266 , H01J37/32743
摘要： A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
摘要翻译：提供一种等离子体处理装置，其有助于减少维护所需的时间，从而提高处理效率和装置操作的效率。真空处理装置包括真空容器，其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室，真空容器连接到该传送室，并且其内部的压力降低，样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件，其可移除地联接以覆盖通道的内壁面，其中，在处理室内用处理室中形成的等离子体处理样品。

8. 发明授权

US08048259B2 Vacuum processing apparatus 失效
标题翻译：真空加工设备
公开(公告)号：US08048259B2
公开(公告)日：2011-11-01
申请号：US11512309
申请日：2006-08-30
申请人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
发明人： Michiaki Kobayashi , Tsutomu Nakamura , Takeo Uchino , Akitaka Makino , Masashi Nakagome
IPC分类号： C23F1/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67126 , H01J37/32495 , H01J37/3266 , H01J37/32743
摘要： A plasma processing apparatus which contributes to reducing required time for maintenance and thereby to enhancing the efficiency of processing and that of apparatus operation is to be provided. A vacuum processing apparatus comprises a vacuum vessel in which a substrate-shaped sample is arranged in an internally arranged processing chamber in which the pressure is reduced; a transfer chamber to which the vacuum vessel is linked and through whose inside reduced in pressure the sample is transferred; a passage which establishes communication between the transfer chamber and the vacuum vessel in a state in which the transfer chamber and the processing chamber are linked to each other and through whose inside the sample not yet processed or already processed is transferred; and a covering member which is removably coupled to cover the internal wall face of the passage, wherein the sample is processed within the processing chamber with a plasma formed in the processing chamber.
摘要翻译：提供一种等离子体处理装置，其有助于减少维护所需的时间，从而提高处理效率和装置操作的效率。真空处理装置包括真空容器，其中基板形样品布置在其中压力降低的内部布置的处理室中; 传送室，真空容器连接到该传送室，并且其内部的压力降低，样品被传送; 在传送室和处理室彼此连接并且样品尚未处理或已经被处理的内部的状态下传送在传送室和真空容器之间建立连通的通道; 以及覆盖部件，其可移除地联接以覆盖通道的内壁面，其中，在处理室内用处理室中形成的等离子体处理样品。

9. 发明授权

US08897906B2 Wafer processing based on sensor detection and system learning 有权
标题翻译：基于传感器检测和系统学习的晶片处理
公开(公告)号：US08897906B2
公开(公告)日：2014-11-25
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： H01L21/68 , H01L21/677
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

10. 发明授权

US08460467B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US08460467B2
公开(公告)日：2013-06-11
申请号：US13177076
申请日：2011-07-06
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元，用于向腔室供应气体的处理室。

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