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1. 发明申请

US20130053997A1 VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 有权
标题翻译：真空加工设备和真空加工方法
公开(公告)号：US20130053997A1
公开(公告)日：2013-02-28
申请号：US13236818
申请日：2011-09-20
申请人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
发明人： Tomohiro Ohashi , Akitaka Makino , Hiroho Kitada , Hideki Kihara
IPC分类号： B25J9/10 , B25J13/08
CPC分类号： H01L21/68 , H01L21/67742 , Y10S901/03 , Y10S901/46
摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.
摘要翻译：真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。调整装置根据预先执行的教学动作的结果调整机器人的动作。在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

2. 发明授权

US07976632B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07976632B2
公开(公告)日：2011-07-12
申请号：US12034837
申请日：2008-02-21
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , C23C16/00 , H01L21/677
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas, and a mass flow controller unit interposed between two of the processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理;以及质量流量控制单元，用于向腔室供应气体的处理室。

3. 发明授权

US07947189B2 Vacuum processing apparatus and vacuum processing method of sample 失效
标题翻译：真空加工设备和真空加工方法的样品
公开(公告)号：US07947189B2
公开(公告)日：2011-05-24
申请号：US11696922
申请日：2007-04-05
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C03C25/68 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：一种真空处理方法，其特征在于，将被处理样品安装在放置在能够减压内部的真空容器内的样品架上的样品安装面上，将处理气体和电场供给到真空容器内的样品保持体的上方的空间以产生等离子体，并且将在样品表面上铺设的多层蚀刻成预定形状的膜。在样品安装表面和样品的背面之间供给导热气体，同时根据多层膜的处理进度，导热气体的压力逐步变化的样品。

4. 发明授权

US07833429B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US07833429B2
公开(公告)日：2010-11-16
申请号：US11778780
申请日：2007-07-17
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： B44C1/22
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A RF bias voltage is adjusted based on the result of comparison by the comparison circuit.
摘要翻译：一种等离子体处理装置的等离子体处理方法，包括气体环，钟罩，天线，样品台，法拉第屏蔽和用于向天线和法拉第屏蔽提供电源电压的RF电源电路。 RF电源电路包括RF电源，与RF电源连接的天线，与天线串联连接并提供谐振电压的谐振电路，用于检测谐振电路的谐振电压的检测电路，以及比较器电路，用于将由检测电路检测的谐振电压与预定设定值进行比较。基于比较电路的比较结果来调整RF偏置电压。

5. 发明申请

US20100018649A1 Plasma Processing Apparatus And Method 有权
标题翻译：等离子体处理装置及方法
公开(公告)号：US20100018649A1
公开(公告)日：2010-01-28
申请号：US12575514
申请日：2009-10-08
申请人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
发明人： Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
IPC分类号： H01L21/3065
CPC分类号： C23C16/4558 , C23C16/4404 , C23C16/45591 , C23C16/4581 , C23C16/507 , H01J37/321 , H01J37/3244 , H01J37/32477 , H01J37/32495 , H01J37/32697 , H01L21/67069
摘要： A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.
摘要翻译：等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。环形构件向上延伸以覆盖钟罩的内表面的一部分。

6. 发明授权

US07353076B2 Vacuum processing method and vacuum processing apparatus 有权
标题翻译：真空加工方法和真空处理装置
公开(公告)号：US07353076B2
公开(公告)日：2008-04-01
申请号：US11362012
申请日：2006-02-27
申请人： Nobuo Nagayasu , Hideki Kihara , Michinori Kawaguchi , Yuuzou Oohirabaru
发明人： Nobuo Nagayasu , Hideki Kihara , Michinori Kawaguchi , Yuuzou Oohirabaru
IPC分类号： G06F19/00
CPC分类号： H01L21/68
摘要： The invention provides a semiconductor processing apparatus having a high throughput capable of appropriately coping with the positional displacement that may occur during transfer of the wafer after correcting the position thereof, without slowing down the transfer speed of the wafer. A position correction quantity of the wafer with respect to a vacuum robot is computed based on the outputs of a θ axis sensor for detecting the interception angle of the wafer during rotation of the vacuum robot and an R axis sensor for detecting the interception distance of the wafer during expansion and contraction of the vacuum robot. If the position correction quantity exceeds a predetermined standard value, an operation to change the position data is performed, and if the distance data obtained based on the outputs from the θ axis sensor and the R axis sensor exceeds a predetermined permissible value, it is determined that a displacement error has occurred and the operation is stopped.
摘要翻译：本发明提供了一种具有高通量的半导体处理装置，其能够适当地应对在校正其位置之后在晶片传送期间可能发生的位置偏移，而不会减慢晶片的传送速度。基于用于检测真空机器人旋转期间的晶片的截取角度的θ轴传感器的输出和用于检测真空机器人的截取距离的R轴传感器，计算晶片相对于真空机器人的位置校正量真空机器人的膨胀和收缩期间的晶片。如果位置校正量超过预定的标准值，则执行改变位置数据的操作，并且如果基于θ轴传感器和R轴传感器的输出获得的距离数据超过预定的允许值，则确定发生位移误差，并停止操作。

7. 发明授权

US07335277B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07335277B2
公开(公告)日：2008-02-26
申请号：US10656334
申请日：2003-09-08
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus comprising a transfer unit disposed at a center thereof, plural processing chambers, each processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas; and a mass flow controller unit interposed between two processing chambers for supplying gas to the chambers.
摘要翻译：一种真空处理装置，包括设置在其中心的转印单元，多个处理室，每个处理室具有用于支撑待处理物体的处理台，并使用气体进行处理; 以及插入在用于向所述室供应气体的两个处理室之间的质量流量控制器单元。

8. 发明申请

US20070170149A1 Vacuum Processing Apparatus And Vacuum Processing Method Of Sample 失效
标题翻译：真空加工设备及样品真空处理方法
公开(公告)号：US20070170149A1
公开(公告)日：2007-07-26
申请号：US11696922
申请日：2007-04-05
申请人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
发明人： Tooru Aramaki , Tsunehiko Tsubone , Tadamitsu Kanekiyo , Shigeru Shirayone , Hideki Kihara
IPC分类号： C03C25/68 , H01L21/461 , C23F1/00
CPC分类号： H01L21/31116 , C23F4/00 , H01J37/32192 , H01J37/32935 , H01J2237/2001 , H01L21/31144 , H01L21/67109 , H01L21/67248 , H01L21/76802 , H01L21/76807 , H01L21/76831
摘要： A vacuum processing method includes mounting a sample to be processed on a sample mounting surface on a sample holder placed in a vacuum container whose inside can be depressurized, feeding a processing gas and electric field to a space above the sample holder inside of the vacuum container to generate plasma, and etching films of a plurality of layers laid over the surface of the sample into a predetermined shape. A heat conducting gas is fed between the sample mounting surface and the backside of the sample, and at the same time, the pressure of the heat conducting gas is changed stepwise in accordance with the progress of the processing of the films of a plurality of layers of the sample.
摘要翻译：一种真空处理方法，其特征在于，将被处理样品安装在放置在能够减压内部的真空容器内的样品架上的样品安装面上，将处理气体和电场供给到真空容器内的样品保持体的上方的空间以产生等离子体，并且将在样品表面上铺设的多层蚀刻成预定形状的膜。在样品安装表面和样品的背面之间供给导热气体，同时根据多层膜的处理进度，导热气体的压力逐步变化的样品。

9. 发明授权

US07247207B2 Vacuum processing apparatus 有权
标题翻译：真空加工设备
公开(公告)号：US07247207B2
公开(公告)日：2007-07-24
申请号：US10812087
申请日：2004-03-30
申请人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
发明人： Akitaka Makino , Youji Takahashi , Minoru Soraoka , Hideki Kihara , Susumu Tauchi
IPC分类号： C23C16/00 , H01L21/00 , C23F1/00
CPC分类号： H01L21/6719 , H01L21/67017 , Y10S414/135 , Y10S414/139
摘要： A vacuum processing apparatus includes a vacuum processing chamber having a processing table for supporting an object to be processed and carrying out processing using a gas. The vacuum processing chamber has an axisymmetric structure, including a double wall structure, and a gate valve for sealing an opening through which the object enters the processing chamber.
摘要翻译：真空处理装置包括具有用于支撑待处理物体的处理台和使用气体进行处理的真空处理室。真空处理室具有轴对称结构，包括双壁结构，以及用于密封物体进入处理室的开口的闸阀。

10. 发明申请

US20070100488A1 Vacuum processing method and vacuum processing apparatus 有权
标题翻译：真空加工方法和真空处理装置
公开(公告)号：US20070100488A1
公开(公告)日：2007-05-03
申请号：US11362012
申请日：2006-02-27
申请人： Nobuo Nagayasu , Hideki Kihara , Michinori Kawaguchi , Yuuzou Oohirabaru
发明人： Nobuo Nagayasu , Hideki Kihara , Michinori Kawaguchi , Yuuzou Oohirabaru
IPC分类号： G06F19/00
CPC分类号： H01L21/68
摘要： The invention provides a semiconductor processing apparatus having a high throughput capable of appropriately coping with the positional displacement that may occur during transfer of the wafer after correcting the position thereof, without slowing down the transfer speed of the wafer. A position correction quantity of the wafer with respect to a vacuum robot is computed based on the outputs of a θ axis sensor for detecting the interception angle of the wafer during rotation of the vacuum robot and an R axis sensor for detecting the interception distance of the wafer during expansion and contraction of the vacuum robot. If the position correction quantity exceeds a predetermined standard value, an operation to change the position data is performed, and if the distance data obtained based on the outputs from the θ axis sensor and the R axis sensor exceeds a predetermined permissible value, it is determined that a displacement error has occurred and the operation is stopped.
摘要翻译：本发明提供了一种具有高通量的半导体处理装置，其能够适当地应对在校正其位置之后在晶片传送期间可能发生的位置偏移，而不会减慢晶片的传送速度。基于用于检测真空机器人旋转期间的晶片的截取角度的θ轴传感器的输出和用于检测真空机器人的截取距离的R轴传感器，计算晶片相对于真空机器人的位置校正量真空机器人的膨胀和收缩期间的晶片。如果位置校正量超过预定的标准值，则执行改变位置数据的操作，并且如果基于θ轴传感器和R轴传感器的输出获得的距离数据超过预定的允许值，则确定发生位移误差，并停止操作。

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