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1. 发明申请

US20060191482A1 Apparatus and method for processing wafer 审中-公开
标题翻译：晶圆处理装置及方法
公开(公告)号：US20060191482A1
公开(公告)日：2006-08-31
申请号：US11074717
申请日：2005-03-09
申请人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
发明人： Seiichiro Kanno , Junichi Tanaka , Go Miya , Tsunehiko Tsubone , Akitaka Makino , Toshio Masuda
IPC分类号： C23C16/00
CPC分类号： H01L21/32137 , H01J37/32935 , H01J37/3299 , H01J2237/2001 , H01L21/67069 , H01L21/67109
摘要： A wafer processing apparatus capable of obtaining a uniform CD distribution within a wafer is provided. The wafer processing apparatus comprises at least two separate circuits of temperature regulating means provided in a wafer stage, a plurality of cooling gas pressure regulating means for feeding cooling gas between the semiconductor wafer and the wafer stage, means for regulating heater input power, and a control computer. The control computer receives input of line width dimensions resulting from processes in an arbitrary plurality of temperature conditions obtained by changing at least one of the conditions of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater. The line width dimensions are used to calculate, and control, at least one of the temperature of the temperature regulating agent, the cooling gas pressure, and the input power of the heater for obtaining an arbitrary etching line width dimension.
摘要翻译：提供能够在晶片内获得均匀的CD分布的晶片处理装置。晶片处理装置包括设置在晶片台中的温度调节装置的至少两个分离电路，用于在半导体晶片和晶片台之间供给冷却气体的多个冷却气体压力调节装置，用于调节加热器输入功率的装置和控制电脑。控制计算机接收由通过改变温度调节剂的温度，冷却气体压力和加热器的输入功率的至少一个条件而获得的任意多个温度条件下的处理产生的线宽尺寸的输入。线宽尺寸用于计算和控制温度调节剂的温度，冷却气体压力和加热器的输入功率中的至少一个，以获得任意的蚀刻线宽度尺寸。

2. 发明申请

US20060291132A1 Electrostatic chuck, wafer processing apparatus and plasma processing method 审中-公开
标题翻译：静电卡盘，晶片加工装置和等离子体处理方法
公开(公告)号：US20060291132A1
公开(公告)日：2006-12-28
申请号：US11370102
申请日：2006-03-08
申请人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
发明人： Seiichiro Kanno , Tsunehiko Tsubone , Masakazu Isozaki , Toshio Masuda , Go Miya , Hiroho Kitada , Tooru Aramaki
IPC分类号： H01T23/00
CPC分类号： H01L21/67109 , H01L21/67103 , H01L21/6831
摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.
摘要翻译：以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

3. 发明申请

US20060169671A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20060169671A1
公开(公告)日：2006-08-03
申请号：US11072305
申请日：2005-03-07
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Akitaka Makino , Motohiko Yoshigai
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/32137
摘要： To provide a plasma etching apparatus that achieves a high in-plane uniformity of the CD shift. A plasma etching apparatus includes: a process chamber 26 in which a plasma etching process is performed on a process target object 1; A first gas supply source 100 for supplying a first process gas; a second gas supply source 110 for supplying a second process gas; a first gas introduction area 42-1 having a first gas introduction port for introducing the first process gas into the process chamber 26; a second gas introduction area 42-2 having a second gas introduction port 3 for introducing the second process gas into the process chamber 26; flow controllers 102, 113 for adjusting the flow rates of the process gasses; and a gas flow divider 120 for dividing the process gas into a plurality of gas flows, in which the first gas introduction port and the second gas introduction port are provided substantially in the same plane, and the first gas introduction area 42-1 and the second gas introduction area 42-2 are separated from each other.
摘要翻译：提供一种实现CD偏移的高平面内均匀性的等离子体蚀刻装置。等离子体蚀刻装置包括：对处理对象物1进行等离子体蚀刻处理的处理室26; 用于供应第一处理气体的第一气体供应源100; 用于供应第二处理气体的第二气体供应源110; 具有用于将第一处理气体引入到处理室26中的第一气体导入口的第一气体导入区域42-1; 具有用于将第二处理气体引入到处理室26中的第二气体导入口3的第二气体导入区域42-2; 流量控制器102,113，用于调节过程气体的流量; 以及用于将处理气体分成多个气流的气体分流器120，其中第一气体导入口和第二气体导入口基本上设置在同一平面上，第一气体导入区域42-1和第二气体导入区域42-2彼此分离。

4. 发明申请

US20070209759A1 Plasma etching apparatus and plasma etching method 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070209759A1
公开(公告)日：2007-09-13
申请号：US11501814
申请日：2006-08-10
申请人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
发明人： Go Miya , Naoshi Itabashi , Seiichiro Kanno , Akitaka Makino , Hiroshi Akiyama
IPC分类号： H01L21/306 , C23F1/00
CPC分类号： H01L21/32137 , H01J37/32192 , H01J37/3244
摘要： In performing plasma etching with the aim to form a gate electrode on a large-diameter substrate, it is difficult according to prior art methods to ensure the in-plane uniformity of CD shift of the gate electrode. The present invention solves the problem by supplying processing gases having different flow rates and compositions respectively through openings formed at positions opposing to the substrate and at the upper corner or side wall of the processing chamber.
摘要翻译：为了在大直径基板上形成栅电极进行等离子体蚀刻，根据现有技术的方法难以确保栅电极的CD偏移的平面内均匀性。本发明通过分别通过形成在与基板相对的位置处的开口和在处理室的上角或侧壁处分别提供具有不同流速和组成的处理气体来解决该问题。

5. 发明申请

US20060042757A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20060042757A1
公开(公告)日：2006-03-02
申请号：US10927095
申请日：2004-08-27
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： C23F1/00
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

6. 发明申请

US20070240825A1 Wafer processing apparatus capable of controlling wafer temperature 审中-公开
标题翻译：能够控制晶片温度的晶片处理装置
公开(公告)号：US20070240825A1
公开(公告)日：2007-10-18
申请号：US11812289
申请日：2007-06-18
申请人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
发明人： Seiichiro Kanno , Manabu Edamura , Ryujiro Udo , Masatsugu Arai , Junichi Tanaka , Saburo Kanai , Ryoji Nishio , Tsunehiko Tsubone , Toru Aramaki
IPC分类号： H01L21/306
CPC分类号： H01L21/67248 , H01J37/32935 , H01J2237/2001 , H01L21/67109
摘要： In a wafer processing apparatus, wafers are sequentially placed one by one on a ceramic plate of a wafer stage within a vacuum chamber. The pressure of a heat-conductive gas introduced at this time between the wafer and the ceramic plate is adjusted to control the temperature of the wafer, and the wafer is processed by use of plasma. In this case, the user can select any one of a process for regulating the pressure of the heat-conductive gas each time the wafers are sequentially placed on the wafer stage, a process for optimizing aging conditions, and a process for optimizing heater conditions so that the wafer temperature variation within lot can be reduced by performing the selected process. The selected process is performed on the basis of its conditions that are computed to determine by a control-purpose computer of the processing apparatus.
摘要翻译：在晶片处理装置中，将晶片依次放置在真空室内的晶片台的陶瓷板上。调节此时在晶片和陶瓷板之间引入的导热气体的压力，以控制晶片的温度，并且通过使用等离子体来处理晶片。在这种情况下，用户可以选择每次晶片顺序地放置在晶片台上时用于调节导热气体的压力的处理中的任何一个，优化老化条件的处理和优化加热器条件的处理可以通过执行所选择的处理来减少批次内的晶片温度变化。所选择的处理是根据其计算以由处理装置的控制用计算机确定的条件执行的。

7. 发明授权

US07396771B2 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US07396771B2
公开(公告)日：2008-07-08
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： H01L21/461 , H01L21/302
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

8. 发明申请

US20080110569A1 PLASMA ETCHING APPARATUS AND PLASMA ETCHING METHOD 审中-公开
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20080110569A1
公开(公告)日：2008-05-15
申请号：US11682382
申请日：2007-03-06
申请人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
发明人： Go Miya , Junichi Tanaka , Seiichiro Kanno , Naoshi Itabashi , Hiroshi Akiyama , Kouhei Satou
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32935 , H01J37/32972
摘要： The invention provides a method and apparatus for performing plasma etching to form a gate electrode on a large-scale substrate while ensuring the in-plane uniformity of the CD shift of the gate electrode. The present invention measures a radical density distribution of plasma in the processing chamber, feeds processing gases into the processing chamber through multiple locations and controls either the flow rates or compositions of the respective processing gases or the in-plane temperature distribution of a stage on which the substrate is placed, or feeds processing gases into the processing chamber through multiple locations and controls both the flow rates or compositions of the processing gases and the in-plane temperature distribution of the stage on which the substrate is placed.
摘要翻译：本发明提供了一种用于在确保栅电极的CD偏移的面内均匀性的同时在大尺寸基板上进行等离子体蚀刻以形成栅电极的方法和装置。本发明测量处理室中的等离子体的自由基密度分布，通过多个位置将处理气体进料到处理室中，并且控制各个处理气体的流速或组成或其上的平面上的温度分布衬底被放置或者通过多个位置将处理气体进料到处理室中，并控制处理气体的流速或组成以及放置衬底的阶段的面内温度分布。

9. 发明申请

US20060043064A1 Plasma processing system and method 审中-公开
标题翻译：等离子体处理系统及方法
公开(公告)号：US20060043064A1
公开(公告)日：2006-03-02
申请号：US10934383
申请日：2004-09-07
申请人： Junichi Tanaka , Takehisa Iwakoshi , Seiichiro Kanno , Go Miya , Motohiko Yoshigai
发明人： Junichi Tanaka , Takehisa Iwakoshi , Seiichiro Kanno , Go Miya , Motohiko Yoshigai
IPC分类号： C23F1/00 , G01L21/30
CPC分类号： H01J37/32972 , G01N21/68 , G01N2021/8416 , H01J37/32449 , H01J37/32935
摘要： A plasma processing system includes a process chamber equipped with a gas supply unit, a gas exhaust and an electromagnetic energy supply unit for generating plasma from process gasses, thereby subjecting a specimen placed on a specimen stage to a plasma process. The system includes a spectrometer detecting a spectrum of plasma emission generated in the chamber, flow controllers controlling flow rates of process gasses to be supplied, and a controller controlling the flow controllers. The controller includes a calculation unit for calculating an amount of reaction byproducts generated in the chamber, in accordance with the spectrum of the plasma emission detected with the spectrometer and an input unit for inputting a target timeline of the amount of reaction byproducts, and controls amounts of the process gasses such that a calculation result of the amount of reaction byproducts becomes coincident with the input target timeline.
摘要翻译：等离子体处理系统包括具有气体供给单元，排气口和用于从工艺气体产生等离子体的电磁能量供给单元的处理室，从而使放置在试样台上的试样进行等离子体处理。该系统包括检测在室中产生的等离子体发射光谱的光谱仪，控制要供应的过程气体的流量的流量控制器和控制流量控制器的控制器。控制器包括：计算单元，用于根据用光谱仪检测的等离子体发射光谱和用于输入反应副产物的量的目标时间线的输入单元计算室内产生的反应副产物的量，并控制量的过程气体，使得反应副产物的量的计算结果与输入的目标时间线一致。

10. 发明申请

US20070056929A1 Plasma etching apparatus and plasma etching method 失效
标题翻译：等离子体蚀刻装置和等离子体蚀刻方法
公开(公告)号：US20070056929A1
公开(公告)日：2007-03-15
申请号：US11362867
申请日：2006-02-28
申请人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
发明人： Go Miya , Seiichiro Kanno , Naoshi Itabashi , Motohiko Yoshigai , Junichi Tanaka , Masahito Mori , Naoyuki Kofuji , Go Saito
IPC分类号： C23F1/00 , G01L21/30 , H01L21/306 , H01L21/302 , G01R31/00
CPC分类号： H01L21/67069 , H01J37/32449 , H01J37/32935 , H01L21/32137 , H01L21/67248 , H01L21/67253
摘要： A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of the specimen, at least two gas supply sources for supplying processing gases, at least two gas inlets for introducing the processing gases into the processing chamber, a regulator for independently controlling the compositions or the flow rates of the processing gases introduced from the at least two gas inlets and the temperatures controlled with at least two temperature controllers in the specimen holder, and an electromagnetic wave supply unit for sending an electromagnetic wave into the processing chamber, wherein the compositions or the flow rates of the processing gases introduced from the gas inlets and the temperature controlled with the temperature controllers in the specimen holder are independently controlled.
摘要翻译：一种等离子体蚀刻装置，包括：处理室，其中试样经受等离子体处理;试样保持器，用于保持试样;试样架包括用于控制试样至少2个位置的温度的温度控制器，至少两个气体供应用于提供处理气体的源，用于将处理气体引入处理室的至少两个气体入口，用于独立地控制从至少两个气体入口引入的处理气体的组成或流速的调节器和由样品架中的至少两个温度控制器和用于将电磁波发送到处理室中的电磁波供给单元，其中从气体入口引入的处理气体的组成或流速以及用温度控制器控制的温度样品架独立控制。

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