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1. 发明授权

US5949118A Etching method for silicon substrates and semiconductor sensor 失效
标题翻译：硅衬底和半导体传感器的蚀刻方法
公开(公告)号：US5949118A
公开(公告)日：1999-09-07
申请号：US637128
申请日：1996-04-24
申请人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： G01L9/00 , H01L29/84 , H01L29/82
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

2. 发明授权

US06194236B1 Electrochemical etching method for silicon substrate having PN junction 有权
标题翻译：具有PN结的硅衬底的电化学蚀刻方法
公开(公告)号：US06194236B1
公开(公告)日：2001-02-27
申请号：US09247908
申请日：1999-02-11
申请人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
发明人： Minekazu Sakai , Tsuyoshi Fukada , Yukihiko Tanizawa , Koki Mizuno , Yasutoshi Suzuki , Yoshitsugu Abe , Hiroshi Tanaka , Motoki Ito , Kazuhisa Ikeda , Hiroshi Okada
IPC分类号： H01L2166
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/977
摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.
摘要翻译：公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。容器中充满KOH溶液。在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加部分。在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

3. 发明授权

US06444543B2 Semiconductor sensor device and method of manufacturing the same 有权
标题翻译：半导体传感器装置及其制造方法
公开(公告)号：US06444543B2
公开(公告)日：2002-09-03
申请号：US09866709
申请日：2001-05-30
申请人： Minekazu Sakai , Hiroshige Sugito , Hiroshi Muto , Motoki Ito , Tsuyoshi Fukada
发明人： Minekazu Sakai , Hiroshige Sugito , Hiroshi Muto , Motoki Ito , Tsuyoshi Fukada
IPC分类号： H01L21301
CPC分类号： B81C1/00896 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.
摘要翻译：通过从基板的第二表面切割基板，形成在基板的第一表面上的加速度传感器芯片的多个半导体芯片被分离成单独的部件。在传感器芯片形成在第一表面上的同时形成围绕传感器芯片的每个传感器芯片周围的凹槽，该传感器芯片被切出。在切割之前，覆盖第一表面的保护片沿着凹槽的侧壁和底壁粘贴。所述凹槽被制成足够宽以确保保护片沿着凹槽的壁弯曲，而不会在凹槽和保护片之间留下空间。因此，防止在切割工艺中产生的切割粉尘被散射并进入传感器芯片。

4. 发明授权

US5920106A Semiconductor device and method for producing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5920106A
公开(公告)日：1999-07-06
申请号：US987500
申请日：1997-12-09
申请人： Nobukazu Oba , Toshio Ikuta , Minekazu Sakai , Tsuyoshi Fukada , Yasutoshi Suzuki
发明人： Nobukazu Oba , Toshio Ikuta , Minekazu Sakai , Tsuyoshi Fukada , Yasutoshi Suzuki
IPC分类号： G01L9/04 , B81B3/00 , G01L9/00 , H01L29/84
CPC分类号： G01L9/0042
摘要： A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced.
摘要翻译：半导体压力检测装置包括形成在具有减小的厚度的P-导电型半导体衬底的部分处的膜片。在基板上形成的N-导电型半导体层的表面上形成有规格电阻。在N导电型半导体层中形成N +导电型扩散层，以固定N-导电型层的电位。第一导电类型区域围绕隔膜。因此，当N-导电类型区域被提供电位时，N-导电类型层中的电位梯度小。因此，流向量规电阻器与N-导电型区域之间的pn结的漏电流减小。

5. 发明授权

US6151966A Semiconductor dynamical quantity sensor device having electrodes in Rahmen structure 有权
标题翻译：具有Rahmen结构的电极的半导体动力传感器装置
公开(公告)号：US6151966A
公开(公告)日：2000-11-28
申请号：US304849
申请日：1999-05-05
申请人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
发明人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.
摘要翻译：通过微加工在SOI衬底上形成半导体加速度计装置。可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。可动电极与配重部一体地形成为梳形。一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。这种结构减小了每个电极的重量，同时增加了抗扭力的强度。由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

6. 发明授权

US06753201B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06753201B2
公开(公告)日：2004-06-22
申请号：US10154784
申请日：2002-05-28
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： H01L2100
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

7. 发明授权

US06240782B1 Semiconductor physical quantity sensor and production method thereof 有权
标题翻译：半导体物理量传感器及其制造方法
公开(公告)号：US06240782B1
公开(公告)日：2001-06-05
申请号：US09247865
申请日：1999-02-11
申请人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
发明人： Nobuyuki Kato , Toshimasa Yamamoto , Tsuyoshi Fukada , Minekazu Sakai
IPC分类号： G01P15125
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor physical quantity sensor includes a substrate, a beam-structure movable portion and a fixed portion. The beam-structure movable portion is suspended by four anchors formed of polycrystalline films. A rectangular mass is suspended between beams. Movable electrodes project from both sides of the mass. First fixed electrodes and second fixed electrodes are fixedly provided on the surface of the substrate. The substrate has a laminated structure, wherein an oxide film, attaching film, insulating films, conductive film and insulating film are laminated on the substrate. An anchor formed from the conductive film is electrically connected to the attaching film. An electrode pad made of an aluminum film is provided the above the anchor. Because this structure enables the potential of the attaching film to be fixed, parasitic capacitance can be decreased.
摘要翻译：半导体物理量传感器包括基板，梁结构可动部和固定部。梁结构可移动部分由由多晶膜形成的四个锚固件悬挂。梁之间悬挂有矩形质量块。活动电极从质量两侧投射。第一固定电极和第二固定电极固定地设置在基板的表面上。基板具有叠层结构，其中在基板上层压氧化膜，附着膜，绝缘膜，导电膜和绝缘膜。由导电膜形成的锚固件与连接膜电连接。在锚上方设置由铝膜制成的电极垫。由于该结构能够使固定膜的电位固定，所以可以降低寄生电容。

8. 发明授权

US5654244A Process for producing semiconductor strain-sensitive sensor 失效
标题翻译：生产半导体应变敏感传感器的工艺
公开(公告)号：US5654244A
公开(公告)日：1997-08-05
申请号：US427960
申请日：1995-04-26
申请人： Minekazu Sakai , Tsuyoshi Fukada , Hiroshige Sugito
发明人： Minekazu Sakai , Tsuyoshi Fukada , Hiroshige Sugito
IPC分类号： G01L1/22 , G01L9/00 , H01L29/84 , H01L21/46
CPC分类号： G01L9/0042
摘要： In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.
摘要翻译：在本发明中，在蚀刻第二保护层时防止在隔膜上形成的第一保护层不必要地被蚀刻，并且提高了隔膜的检测精度。在制造半导体压力传感器的工艺中，通过在隔膜1a上沉积来连续地形成第一保护层4，金属层8和第二保护层6，并且通过蚀刻去除第二保护层6，使得第二保护层6 保护层6留在电极5的预定部分上。由于金属层8在通过蚀刻去除第二保护层6时用作蚀刻停止层，所以防止隔膜1a上的第一保护层4 被蚀刻之后通过蚀刻除去金属层8，使得在隔膜1a上仅形成第一保护层4。

9. 发明授权

US06906394B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06906394B2
公开(公告)日：2005-06-14
申请号：US10448277
申请日：2003-05-30
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： G01P15/125 , B81B3/00 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L29/84 , H01L27/01
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

10. 发明授权

US06423563B2 Method for manufacturing semiconductor dynamic quantity sensor 有权
标题翻译：制造半导体动态量传感器的方法
公开(公告)号：US06423563B2
公开(公告)日：2002-07-23
申请号：US09861535
申请日：2001-05-22
申请人： Tsuyoshi Fukada , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama
发明人： Tsuyoshi Fukada , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama
IPC分类号： H01L2984
CPC分类号： B81C1/00936 , B81B3/0005 , B81B2201/0235 , B81B2201/025 , B81B2203/0136 , B81B2203/033 , B81B2203/04 , B81C2201/0132 , B81C2201/053 , B81C2201/112 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/084
摘要： A semiconductor dynamic quantity sensor includes a semiconductor support substrate having a specific resistance equal to or less than 3&OHgr; cm. An insulation film is provided on the support substrate and a semiconductor layer is provided on the support substrate with the insulation film interposed therebetween. The semiconductor layer has a specific resistance equal to or less than 3&OHgr; cm. A movable electrode is provided in the semiconductor layer to be displaced according to a dynamic quantity acting thereto. A fixed electrode is fixedly provided in the semiconductor layer to make a specific gap with the movable electrode and to from a capacitor with the movable electrode. The capacitor has a capacity that changes in response to displacement of the movable electrode to detect the dynamic quantity.
摘要翻译：半导体动态量传感器包括具有等于或小于3OMEGA cm的电阻率的半导体支撑衬底。绝缘膜设置在支撑基板上，半导体层设置在支撑基板上，绝缘膜位于支撑基板之间。半导体层的电阻率等于或小于3OMEGA cm。可移动电极设置在半导体层中，以根据作用于其的动态量而移位。在半导体层中固定设置固定电极，与可动电极和可动电极的电容器形成特定的间隙。电容器具有响应于可动电极的位移而变化以检测动态量的容量。

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