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1. 发明授权

US09853141B2 Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes 有权
公开(公告)号：US09853141B2
公开(公告)日：2017-12-26
申请号：US15107132
申请日：2014-08-04
申请人： Jun Saito , Hirokazu Fujiwara , Tomoharu Ikeda , Yukihiko Watanabe , Toshimasa Yamamoto
发明人： Jun Saito , Hirokazu Fujiwara , Tomoharu Ikeda , Yukihiko Watanabe , Toshimasa Yamamoto
IPC分类号： H01L29/15 , H01L29/78 , H01L29/06 , H01L21/762 , H01L29/10 , H01L29/167 , H01L29/739 , H01L29/16
CPC分类号： H01L29/7813 , H01L21/76237 , H01L29/0619 , H01L29/0623 , H01L29/0649 , H01L29/105 , H01L29/16 , H01L29/1608 , H01L29/167 , H01L29/7395 , H01L29/7811
摘要： Higher voltage resistance is accomplished by expanding a depletion layer more quickly within a circumferential region. A semiconductor device includes an element region, in which an insulated gate type switching element is provided, and the circumferential region. A first trench and a second trench spaced apart from the first trench are provided in the front surface in the circumferential region. Insulating films are provided in the first trench and the second trench. A fourth region of the second conductivity type is provided so as to extend from a bottom surface of the first trench to a bottom surface of the second trench. A fifth region of the first conductivity type continuous from the third region is provided under the fourth region.

2. 发明申请

US20140346592A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20140346592A1
公开(公告)日：2014-11-27
申请号：US14363523
申请日：2012-12-06
申请人： Akitaka Soeno , Toshimasa Yamamoto , Yukihiko Watanabe
发明人： Akitaka Soeno , Toshimasa Yamamoto , Yukihiko Watanabe
IPC分类号： H01L29/78 , H01L29/423 , H01L29/10 , H01L29/51
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/42368 , H01L29/512 , H01L29/513
摘要： A vertical MOSFET includes: a semiconductor substrate comprising a drain layer, a drift layer, a body layer, and a source layer; and a trench gate penetrating through the source layer and the body layer from an upper surface of the semiconductor substrate and reaching the drift layer. The trench gate includes a gate electrode; a first insulating film disposed on a bottom surface of a trench formed in the semiconductor substrate; a second insulating film disposed at least on a side surface of the trench, and in contact with the body layer; and a third insulating film disposed between the gate electrode and the second insulating film, and formed of a material of which dielectric constant is higher than a dielectric constant of the second insulating film.
摘要翻译：垂直MOSFET包括：包括漏极层，漂移层，主体层和源极层的半导体衬底; 以及沟槽栅极，从半导体衬底的上表面穿过源极层和主体层，并到达漂移层。沟槽栅极包括栅电极; 第一绝缘膜，设置在形成在所述半导体衬底中的沟槽的底表面上; 第二绝缘膜，其至少设置在所述沟槽的侧表面上，并与所述主体层接触; 以及第三绝缘膜，其设置在所述栅电极和所述第二绝缘膜之间，并且由介电常数高于所述第二绝缘膜的介电常数的材料形成。

3. 发明申请

US20130146969A1 SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF 有权
标题翻译：开关元件及其制造方法
公开(公告)号：US20130146969A1
公开(公告)日：2013-06-13
申请号：US13712343
申请日：2012-12-12
申请人： Hirokazu FUJIWARA , Yukihiko WATANABE , Narumasa SOEJIMA , Toshimasa YAMAMOTO , Yuichi TAKEUCHI
发明人： Hirokazu FUJIWARA , Yukihiko WATANABE , Narumasa SOEJIMA , Toshimasa YAMAMOTO , Yuichi TAKEUCHI
IPC分类号： H01L29/66 , H01L29/78
CPC分类号： H01L29/66666 , H01L21/26506 , H01L29/1095 , H01L29/1608 , H01L29/167 , H01L29/42368 , H01L29/42376 , H01L29/66068 , H01L29/7397 , H01L29/7813 , H01L29/7827
摘要： A switching element is provided having a semiconductor substrate. A trench gate electrode is formed in the upper surface of the semiconductor substrate. An n-type first semiconductor region, a p-type second semiconductor region, and an n-type third semiconductor region are formed in a region in contact with a gate insulating film in the semiconductor substrate. At a position below the second semiconductor region, there is formed a p-type fourth semiconductor region connected to the second semiconductor region and opposing the gate insulating film via the third semiconductor region and containing boron. A high-concentration-carbon containing region having a carbon concentration higher than that of a semiconductor region exposed on the lower surface of the semiconductor substrate is formed in at least a part of the portion of the third semiconductor region, positioned between the fourth semiconductor region and the gate insulating film, that is in contact with the fourth semiconductor region.
摘要翻译：提供了具有半导体衬底的开关元件。沟槽栅电极形成在半导体衬底的上表面中。在与半导体衬底中的栅极绝缘膜接触的区域中形成n型第一半导体区域，p型第二半导体区域和n型第三半导体区域。在第二半导体区域下方的位置处，形成连接到第二半导体区域的p型第四半导体区域，并且经由第三半导体区域与栅极绝缘膜相对并且含有硼。在第三半导体区域的至少一部分中，形成具有比在半导体衬底的下表面露出的半导体区域的碳浓度高的高浓度碳含有区域，位于第四半导体区域以及与第四半导体区域接触的栅极绝缘膜。

4. 发明授权

US07825449B2 Silicon carbide semiconductor device and related manufacturing method 有权
标题翻译：碳化硅半导体器件及相关制造方法
公开(公告)号：US07825449B2
公开(公告)日：2010-11-02
申请号：US12289624
申请日：2008-10-30
申请人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
发明人： Naohiro Suzuki , Yuuichi Takeuchi , Takeshi Endo , Eiichi Okuno , Toshimasa Yamamoto
IPC分类号： H01L29/94 , H01L21/04 , H01L29/68
CPC分类号： H01L29/7813 , H01L29/045 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/0847 , H01L29/1095 , H01L29/1608 , H01L29/47 , H01L29/66068 , H01L29/7391 , H01L29/7397 , H01L29/7828
摘要： An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n−-type drift layer to extend into the n−-type drift layer in a remarkable length, making it difficult for a high voltage, resulting from an adverse affect arising from a drain voltage, to enter a gate oxide film. This results in a capability of minimizing an electric field concentration in the gate oxide film, i.e., an electric field concentration occurring at the gate oxide film at a bottom wall of the trench.
摘要翻译：公开了一种SiC半导体器件和相关制造方法，其具有设置有等于或大于沟槽深度形成的p +型深层的结构，以在p +型之间的PN结处引起耗尽层深层和n型漂移层以非常长的长度延伸到n型漂移层中，使得由于漏极电压引起的不利影响导致的高电压难以进入栅极氧化膜。这导致使栅极氧化膜中的电场浓度最小化的能力，即在沟槽的底壁处的栅极氧化膜处发生的电场浓度。

5. 发明授权

US07290730B2 Webbing retractor 有权
标题翻译：织带牵开器
公开(公告)号：US07290730B2
公开(公告)日：2007-11-06
申请号：US10845074
申请日：2004-05-14
申请人： Tomonori Nagata , Toshimasa Yamamoto , Hitoshi Takamatsu , Yasuho Kitazawa , Takeaki Kato , Makoto Sekizuka , Shigekazu Imanaka , Kiyoka Matsubayashi , Takuya Nezaki
发明人： Tomonori Nagata , Toshimasa Yamamoto , Hitoshi Takamatsu , Yasuho Kitazawa , Takeaki Kato , Makoto Sekizuka , Shigekazu Imanaka , Kiyoka Matsubayashi , Takuya Nezaki
IPC分类号： B65H75/48
CPC分类号： B60R22/4676 , B60R22/405 , B60R22/4633 , B60R2022/287 , B60R2022/468
摘要： A pinion of a pretensioner is provided at a side of a torsion shaft, which side is opposite a side connected integrally to a spool via a sleeve. A base lock of a lock mechanism is connected to the pinion. Due to the lock mechanism operating, a leg plate side end portion of the torsion shaft is locked. In this way, due to operation of the pretensioner, the pinion, which is connected to a rotating portion of a sleeve, also is locked by the locking mechanism. Therefore, a piston of the pretensioner is not lowered, and internal pressure of a cylinder does not affect deformation of the torsion shaft.
摘要翻译：预紧器的小齿轮设置在扭转轴的一侧，该侧与通过套筒一体地连接到卷轴的一侧相对。锁定机构的基锁连接到小齿轮。由于锁定机构操作，扭转轴的腿板侧端部被锁定。以这种方式，由于预紧器的操作，连接到套筒的旋转部分的小齿轮也被锁定机构锁定。因此，预紧器的活塞不会降低，气缸的内部压力不会影响扭转轴的变形。

6. 发明授权

US06705160B2 Flow sensor 失效
标题翻译：流量传感器
公开(公告)号：US06705160B2
公开(公告)日：2004-03-16
申请号：US10197474
申请日：2002-07-18
申请人： Takao Iwaki , Toshimasa Yamamoto , Hiroyuki Wado
发明人： Takao Iwaki , Toshimasa Yamamoto , Hiroyuki Wado
IPC分类号： G01F168
CPC分类号： G01F1/692
摘要： A thin-film type flow sensor having a thin-film part in which a plurality of patterned resistor films are sandwiched between a pair of insulator films. The resistance ratios among the resistor films are minimized from one sensor to another made from the same wafer. The flow sensor has a lower insulator film, the resistor films, and an upper film laminated in succession on a substrate. The resistor films include a patterned fluid thermometer, a temperature detector, and a heater. The heater has a wiring configuration in which resistor elements are connected in a parallel manner. The wiring widths of the heater and the thermometer can thus be made identical, so that the resistance ratios become invariant over the wafer surface, irrespective of a disparity in etching variations.
摘要翻译：一种薄膜型流量传感器，其具有多个图案化的电阻膜夹在一对绝缘膜之间的薄膜部分。电阻膜之间的电阻比从一个传感器到另一个由相同晶片制成的电阻比最小化。流量传感器具有下层绝缘膜，电阻膜和在基片上连续层压的上层膜。电阻膜包括图案化流体温度计，温度检测器和加热器。加热器具有其中电阻元件以并联方式连接的布线配置。因此，加热器和温度计的布线宽度可以相同，使得电阻比在晶片表面上变得不变，而不管蚀刻变化的不同。

7. 发明授权

US06602428B2 Method of manufacturing sensor having membrane structure 有权
公开(公告)号：US06602428B2
公开(公告)日：2003-08-05
申请号：US09991986
申请日：2001-11-26
申请人： Hiroyuki Wado , Makiko Sugiura , Toshimasa Yamamoto , Yukihiro Takeuchi , Yasushi Kohno
发明人： Hiroyuki Wado , Makiko Sugiura , Toshimasa Yamamoto , Yukihiro Takeuchi , Yasushi Kohno
IPC分类号： H01L2100
CPC分类号： G01F1/6845 , B81B2201/0264 , B81B2203/0127 , B81C1/00182 , B81C2201/014 , B81C2201/0169 , G01L9/0042
摘要： A sensor for measuring a physical amount such as an amount of air includes a membrane structure composed of metal stripes sandwiched between first and second insulating layers. A metal layer made of platinum or the like is formed on the first insulating layer and then heat-treated to improve its properties. Then, the metal layer is etched into a form of the metal stripes. The second insulating layer made of a material such as silicon dioxide is formed on the etched metal stripes. Since the metal layer is heat-treated before it is etched into the form of metal stripes, the metal stripes are not deformed by the heat-treatment. The second insulating layer can be formed on the metal stripes without generating cracks in the second insulating layer.

8. 发明授权

US06276207B1 Semiconductor physical quantity sensor having movable portion and fixed portion confronted each other and method of manufacturing the same 有权
标题翻译：具有可动部分和固定部分的半导体物理量传感器彼此面对并且其制造方法
公开(公告)号：US06276207B1
公开(公告)日：2001-08-21
申请号：US09438293
申请日：1999-11-12
申请人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
发明人： Minekazu Sakai , Yukihiro Takeuchi , Inao Toyoda , Seiichiro Ishio , Toshimasa Yamamoto , Eishi Kawasaki , Minoru Murata , Hiroshi Muto
IPC分类号： G01P1500
CPC分类号： B81C1/00928 , B81B3/0008 , B81B3/001 , B81B2201/0235 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A semiconductor acceleration sensor, which prevents an adhesion of a movable portion to a fixed portion due to an electrostatic force generated during being handled. The acceleration sensor has a sensor portion and a handling portion. The sensor portion has a first semiconductor layer; a movable portion including a weight portion supported to the first semiconductor layer for moving in accordance with an acceleration externally applied thereto and movable electrodes integrally formed with the weight portion; and fixed electrodes having a detection surface confronted to a detection surface of the movable electrodes and supported to the first semiconductor layer. The handling portion is to be contacted during being handled, and is provided at surrounding portion of the sensor portion with a trench interposed therebetween. The sensor portion is electrically insulated from the handling portion by the trench.
摘要翻译：一种半导体加速度传感器，其防止由于在处理期间产生的静电力而将可动部分粘附到固定部分。加速度传感器具有传感器部分和处理部分。传感器部分具有第一半导体层; 可移动部分，包括支撑到第一半导体层的重量部分，用于根据向外施加的加速度以及与重物部分整体形成的可动电极; 以及固定电极，其具有与可动电极的检测面相对的支撑于第一半导体层的检测面。处理部分在处理时被接触，并且在传感器部分的周围部分处设置有介于其间的沟槽。传感器部分通过沟槽与处理部分电绝缘。

9. 发明授权

US5500549A Semiconductor yaw rate sensor 失效
标题翻译：半导体偏航率传感器
公开(公告)号：US5500549A
公开(公告)日：1996-03-19
申请号：US357258
申请日：1994-12-13
申请人： Yukihiro Takeuchi , Kozo Shibata , Yoshinori Ohtsuka , Kazuhiko Kano , Toshimasa Yamamoto
发明人： Yukihiro Takeuchi , Kozo Shibata , Yoshinori Ohtsuka , Kazuhiko Kano , Toshimasa Yamamoto
IPC分类号： G01P15/08 , B81B3/00 , B81C1/00 , G01C19/56 , G01C19/5755 , G01C19/5769 , G01P15/14 , H01L29/84 , H01L29/82
CPC分类号： G01C19/5719 , G01P2015/0814 , Y10S73/01
摘要： A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.
摘要翻译：半导体偏航率传感器，其可以通过IC制造工艺容易地构造，使得通过晶体管结构获得由于电流值引起的横摆率检测信号，并且公开了其制造方法。由光束支撑的重量从半导体衬底的表面以规定的间隔设置，并且可动电极和激励电极与该重量一体地形成。用于激发使用的固定电极对应于激发电极固定到基板。与此同时，源电极和漏电极通过在与可动电极相对的位置的基板的表面上的扩散层形成，使得漏极电流随着可可电极的位移而变化由于偏航率，并且由该电流检测到横摆率。

10. 发明授权

US4898033A Acceleration sensor 失效
标题翻译：加速度传感器
公开(公告)号：US4898033A
公开(公告)日：1990-02-06
申请号：US236737
申请日：1988-08-26
申请人： Toshimasa Yamamoto
发明人： Toshimasa Yamamoto
IPC分类号： B60R22/40 , G01P15/03
CPC分类号： G01P15/036 , B60R22/40
摘要： An acceleration sensor has a lever which is swung by the movement of a mass body that is held in a holding member in such a manner as to be movable relative thereto when an acceleration of a predetermined magnitude or greater acts on the holding member in the horizontal direction. The sensor also has a transmission member which is swung by the movement of the mass body and of which the swinging causes the lever to swing, and a prevention member which prevents any upward movement of the transmission member. Therefore, even when the mass body is affected by an acceleration acting in the vertical direction, any affection of the acceleration is prevented from being transmitted to the lever via the transmission member.
摘要翻译：加速度传感器具有杠杆，该杠杆通过被保持在保持构件中的质量体的运动以相对于其移动的方式摆动，当预定幅度或更大的加速度作用在水平方向上的保持构件上时方向。传感器还具有通过质量体的运动摆动并且摆动导致杆摆动的传动构件，以及防止传动构件向上运动的防止构件。因此，即使当质量体受到垂直方向作用的加速度的影响时，防止加速度的影响通过传动构件传递到杠杆。

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