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    • 3. 发明授权
    • Process for producing semiconductor strain-sensitive sensor
    • 生产半导体应变敏感传感器的工艺
    • US5654244A
    • 1997-08-05
    • US427960
    • 1995-04-26
    • Minekazu SakaiTsuyoshi FukadaHiroshige Sugito
    • Minekazu SakaiTsuyoshi FukadaHiroshige Sugito
    • G01L1/22G01L9/00H01L29/84H01L21/46
    • G01L9/0042
    • In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.
    • 在本发明中,在蚀刻第二保护层时防止在隔膜上形成的第一保护层不必要地被蚀刻,并且提高了隔膜的检测精度。 在制造半导体压力传感器的工艺中,通过在隔膜1a上沉积来连续地形成第一保护层4,金属层8和第二保护层6,并且通过蚀刻去除第二保护层6,使得第二保护层6 保护层6留在电极5的预定部分上。由于金属层8在通过蚀刻去除第二保护层6时用作蚀刻停止层,所以防止隔膜1a上的第一保护层4 被蚀刻 之后通过蚀刻除去金属层8,使得在隔膜1a上仅形成第一保护层4。
    • 6. 发明授权
    • Production method of a semiconductor dynamic sensor
    • 半导体动态传感器的制作方法
    • US5643803A
    • 1997-07-01
    • US122164
    • 1993-09-17
    • Tsuyoshi FukadaYoshimi YoshinoHiroshige SugitoMinekazu Sakai
    • Tsuyoshi FukadaYoshimi YoshinoHiroshige SugitoMinekazu Sakai
    • G01P15/08G01P15/12H01L21/3063C25F3/12
    • G01P15/0802G01P15/123G01P15/124H01L21/3063Y10S438/924
    • It is intended to provide an etching method for semiconductor devices in which the etching depth or the thickness of a thin thickness portion can be precisely controlled. According to experiment results, when a P-type substrate in which an N-type epitaxial layer is formed is immersed in an etching solution such as KOH or the like, and a voltage for reverse bias of PN junction is applied between an electrode plate opposing the substrate and the epitaxial layer to perform electrochemical etching, it has been found that the distance from the PN junction plane to the etching stop position is approximately equal to a depletion layer width at the substrate side of the PN junction portion. Namely, the etching stops at the forward end of the depletion layer. Therefore, the junction depletion layer width at the substrate side is controlled to be a size obtained by subtracting a necessary depth for etching from a thickness of the semiconductor substrate except for the semiconductor layer, so that the etching depth or the thickness of the thin thickness portion remaining after etching can be precisely controlled.
    • 旨在为半导体器件提供蚀刻方法,其中可以精确地控制蚀刻深度或厚度厚度部分的厚度。 根据实验结果,当将形成有N型外延层的P型衬底浸入诸如KOH等的蚀刻溶液中时,将PN结的反向偏压施加在相对的电极板之间 衬底和外延层进行电化学蚀刻,已经发现从PN结面到蚀刻停止位置的距离近似等于PN结部分的衬底侧的耗尽层宽度。 也就是说,蚀刻在耗尽层的前端停止。 因此,将衬底侧的结耗尽层宽度控制为通过从除了半导体层之外的半导体衬底的厚度减去所需的蚀刻深度获得的尺寸,使得蚀刻深度或厚度厚度 可以精确地控制蚀刻后残留的部分。