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1. 发明授权

US06906394B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06906394B2
公开(公告)日：2005-06-14
申请号：US10448277
申请日：2003-05-30
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： G01P15/125 , B81B3/00 , H01L21/302 , H01L21/3065 , H01L21/762 , H01L29/84 , H01L27/01
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

2. 发明授权

US06753201B2 Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
标题翻译：能够感测动态量的半导体器件的制造方法
公开(公告)号：US06753201B2
公开(公告)日：2004-06-22
申请号：US10154784
申请日：2002-05-28
申请人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
发明人： Hiroshi Muto , Tsuyoshi Fukada , Kenichi Ao , Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Junji Oohara
IPC分类号： H01L2100
CPC分类号： B81C1/00936 , B81B2203/0136 , B81C1/0019 , B81C1/00531 , B81C2201/0132 , G01P2015/0814 , H01L21/76232 , H01L21/76264 , H01L21/76283
摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.
摘要翻译：提供一种制造半导体器件的方法。使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。去除这样的部件，形成可动部分。例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。拆卸电荷可防止可动部分粘附到其周围部分。

3. 发明授权

US6151966A Semiconductor dynamical quantity sensor device having electrodes in Rahmen structure 有权
标题翻译：具有Rahmen结构的电极的半导体动力传感器装置
公开(公告)号：US6151966A
公开(公告)日：2000-11-28
申请号：US304849
申请日：1999-05-05
申请人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
发明人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.
摘要翻译：通过微加工在SOI衬底上形成半导体加速度计装置。可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。可动电极与配重部一体地形成为梳形。一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。这种结构减小了每个电极的重量，同时增加了抗扭力的强度。由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

4. 发明授权

US07129176B2 Optical device having micro lens array and method for manufacturing the same 有权
标题翻译：具有微透镜阵列的光学装置及其制造方法
公开(公告)号：US07129176B2
公开(公告)日：2006-10-31
申请号：US10759025
申请日：2004-01-20
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： H01L21/027
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

5. 发明申请

US20070019406A1 OPTICAL DEVICE HAVING MICRO LENS ARRAY 有权
标题翻译：具有微透镜阵列的光学器件
公开(公告)号：US20070019406A1
公开(公告)日：2007-01-25
申请号：US11528611
申请日：2006-09-28
申请人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
发明人： Junji Oohara , Kazuhiko Kano , Yoshitaka Noda , Yukihiro Takeuchi , Toshiyuki Morishita
IPC分类号： F21V7/00
CPC分类号： H01L27/14625 , G02B6/4249 , H01L27/14627 , H01L27/14685
摘要： An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.
摘要翻译：光学器件包括半导体衬底和具有设置在衬底上的多个柱状构件的光学部件。每个柱状构件以立式的方式设置并彼此粘合，从而设置光学部件。光学部件与基板一体化。该光学部件具有高设计自由度。

6. 发明授权

US06953753B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06953753B2
公开(公告)日：2005-10-11
申请号：US10373964
申请日：2003-02-27
申请人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
发明人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
IPC分类号： B81B3/00 , B81C1/00 , G01P15/08 , G01P15/125 , H01L29/84 , H01L21/302
CPC分类号： B81C1/0019 , B81B2201/0235 , B81B2203/033 , B81C1/00579 , B81C2201/0132 , G01P15/0802 , G01P15/125 , G01P2015/0814 , Y10T428/169
摘要： A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer such that the insulating layer is located between the semiconductor layer and the semiconductor substrate. The method further includes a step of dry etching the semiconductor layer to form a trench with a charge prevented from building up on a surface of the insulating layer that is exposed at a bottom of the trench during the dry etching. The method further includes a step of dry etching a sidewall defining the trench at a portion adjacent to the bottom of the trench to form the movable unit. The later dry etching is performed with a charge building up on the surface of the insulating layer such that etching ions strike to etch the portion of the sidewall.
摘要翻译：一种具有可移动单元的半导体器件的制造方法包括：形成包括半导体衬底，绝缘层和半导体层的SOI衬底的步骤，使得绝缘层位于半导体层和半导体衬底之间。该方法还包括干法蚀刻半导体层以形成沟槽的步骤，其中在干蚀刻期间，在沟槽底部露出的绝缘层的表面上阻止电荷积聚。该方法还包括在邻近沟槽底部的部分干蚀刻限定沟槽的侧壁以形成可移动单元的步骤。稍后的干法蚀刻是通过在绝缘层的表面上积聚的电荷进行的，使得蚀刻离子发生蚀刻以蚀刻侧壁的一部分。

7. 发明授权

US06713403B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06713403B2
公开(公告)日：2004-03-30
申请号：US10384562
申请日：2003-03-11
申请人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
发明人： Junji Oohara , Kazuhiko Kano , Hiroshi Muto
IPC分类号： H01L2100
CPC分类号： B81C1/0019 , B81C1/00579 , B81C1/00626 , B81C2201/0132 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer. The method further includes a step of dry etching the semiconductor layer to form a trench and a step of dry etching a sidewall defining the trench at a portion adjacent to a bottom of the trench to form the movable unit. The later dry etching is implemented with a charge building up on a surface of the insulating layer that is exposed during the former dry etching to etch the portion. In addition, the later dry etching is implemented at an etching rate higher than that at which the former dry etching is implemented to reduce the deposition amount of a protection film deposited on a reverse side of the movable unit during the later dry etching.
摘要翻译：一种制造具有可移动单元的半导体器件的方法包括形成包括半导体衬底，绝缘层和半导体层的SOI衬底的步骤。该方法还包括干法蚀刻半导体层以形成沟槽的步骤，以及在邻近沟槽底部的部分干蚀刻限定沟槽的侧壁以形成可移动单元的步骤。稍后的干蚀刻通过在前一次干蚀刻中暴露的绝缘层的表面上积累的电荷来实现，以蚀刻该部分。此外，稍后的干蚀刻以比实施前述干蚀刻的蚀刻速率更高的蚀刻速率来实现，以减少在稍后的干蚀刻期间沉积在可移动单元的反面上的保护膜的沉积量。

8. 发明授权

US5587343A Semiconductor sensor method 失效
标题翻译：半导体传感器方法
公开(公告)号：US5587343A
公开(公告)日：1996-12-24
申请号：US401044
申请日：1995-03-08
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
IPC分类号： G01L1/18 , G01L1/22 , G01P15/08 , G01P15/12 , H01L21/28 , H01L29/51 , H01L29/84 , H01L21/00 , B44C1/22
CPC分类号： H01L21/28238 , G01P15/0802 , G01P15/124 , H01L29/51 , H01L29/84 , G01P2015/0828
摘要： A method for fabricating a semiconductor sensor wherein deflection of a movable member is disclosed. A silicon oxide film is formed on a silicon substrate, and a movable member composed of polycrystalline silicon is formed on the silicon oxide film by means of a low-pressured chemical vapor deposition process. At this time, silane is caused to flow into an oven, and the supply of silane is stopped when a layer of polycrystalline silicon has been deposited on the silicon substrate, and a first polycrystalline silicon layer is formed. By means of stopping the supply of silane, a silicon oxide layer of a thickness of several angstroms to several tens of angstroms is formed on the first polycrystalline silicon layer by atmosphere O.sub.2. A second polycrystalline silicon layer of a thickness of 1 .mu.m is formed on the silicon oxide layer by means of causing silane to flow into the oven. Patterning by dry etching or the like through a photo-lithographic process is performed to form a movable member. The silicon oxide film below the movable member is then etched.
摘要翻译：一种制造半导体传感器的方法，其中公开了可移动部件的偏转。在硅基板上形成氧化硅膜，通过低压化学气相沉积工艺在氧化硅膜上形成由多晶硅构成的可动部件。此时，使硅烷流入烘箱，当在硅衬底上沉积多晶硅层时，停止供给硅烷，形成第一多晶硅层。通过停止硅烷的供给，通过气氛O2在第一多晶硅层上形成厚度为几埃至数十埃的氧化硅层。通过使硅烷流入烘箱中，在氧化硅层上形成厚度为1μm的第二多晶硅层。进行通过光刻法的干蚀刻等的图案化，形成可动部件。然后蚀刻可动件下方的氧化硅膜。

9. 发明授权

US5627397A Semiconductor acceleration sensor with source and drain regions 失效
标题翻译：具有源极和漏极区域的半导体加速度传感器
公开(公告)号：US5627397A
公开(公告)日：1997-05-06
申请号：US402949
申请日：1995-03-13
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama , Kenichi Nara
IPC分类号： G01P1/00 , G01P15/12 , H01L29/84 , H01L29/82
CPC分类号： G01P15/124 , G01P1/006 , Y10S73/01
摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.
摘要翻译：根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。在该检测中使用两个晶体管结构。一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。此时，另一晶体管结构中的固定电极之间的电流降低。这两个晶体管结构靠近地设置。通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

10. 发明授权

US5936159A Semiconductor sensor having multi-layer movable beam structure film 失效
标题翻译：具有多层可移动束结构膜的半导体传感器
公开(公告)号：US5936159A
公开(公告)日：1999-08-10
申请号：US755097
申请日：1996-11-25
申请人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
发明人： Kazuhiko Kano , Yukihiro Takeuchi , Takamoto Watanabe , Kenichi Ao , Masakazu Kanosue , Hirofumi Uenoyama
IPC分类号： G01P15/08 , G01P15/12 , H01L21/28 , H01L29/51 , H01L29/84
CPC分类号： H01L21/28238 , G01P15/0802 , G01P15/124 , H01L29/51 , H01L29/84 , G01P2015/0814 , G01P2015/0828
摘要： A semiconductor sensor including a movable member beam structure having a reduced deflection characteristic. The sensor includes a movable beam structure film suspended from a semiconductor substrate, with a gap interposed between the beam structure film and the substrate. The beam structure film is composed of a plurality of film layers that are laminated in a direction of film thickness. Further, a stress relieving layer is interposed between respective films to reduce overall internal stress on the structure.
摘要翻译：一种半导体传感器，包括具有减小的偏转特性的可动构件梁结构。传感器包括从半导体衬底悬挂的可移动的光束结构膜，其间插入在光束结构膜和衬底之间。束结构膜由沿膜厚方向层叠的多个膜层构成。此外，应力消除层插入在各个膜之间以减小结构上的整体内部应力。

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