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1. 发明授权

US06444543B2 Semiconductor sensor device and method of manufacturing the same 有权
标题翻译：半导体传感器装置及其制造方法
公开(公告)号：US06444543B2
公开(公告)日：2002-09-03
申请号：US09866709
申请日：2001-05-30
申请人： Minekazu Sakai , Hiroshige Sugito , Hiroshi Muto , Motoki Ito , Tsuyoshi Fukada
发明人： Minekazu Sakai , Hiroshige Sugito , Hiroshi Muto , Motoki Ito , Tsuyoshi Fukada
IPC分类号： H01L21301
CPC分类号： B81C1/00896 , G01P15/0802 , G01P15/125 , G01P2015/0814
摘要： Plural semiconductor chips such as acceleration sensor chips formed on the first surface of a substrate are separated into individual pieces by dicing the substrate from the second surface thereof. A groove surrounding each sensor chip, along which the sensor chip is diced out, is formed at the same time the sensor chip is formed on the first surface. Before dicing, a protecting sheet covering the first surface is pasted along the sidewalls and the bottom wall of the groove. The groove is made sufficiently wide to ensure that the protecting sheet is bent along the walls of the groove without leaving a space between the groove and the protecting sheet. Thus, dicing dusts generated in the dicing process are prevented from being scattered and entering the sensor chip.
摘要翻译：通过从基板的第二表面切割基板，形成在基板的第一表面上的加速度传感器芯片的多个半导体芯片被分离成单独的部件。在传感器芯片形成在第一表面上的同时形成围绕传感器芯片的每个传感器芯片周围的凹槽，该传感器芯片被切出。在切割之前，覆盖第一表面的保护片沿着凹槽的侧壁和底壁粘贴。所述凹槽被制成足够宽以确保保护片沿着凹槽的壁弯曲，而不会在凹槽和保护片之间留下空间。因此，防止在切割工艺中产生的切割粉尘被散射并进入传感器芯片。

2. 发明授权

US6151966A Semiconductor dynamical quantity sensor device having electrodes in Rahmen structure 有权
标题翻译：具有Rahmen结构的电极的半导体动力传感器装置
公开(公告)号：US6151966A
公开(公告)日：2000-11-28
申请号：US304849
申请日：1999-05-05
申请人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
发明人： Minekazu Sakai , Yukihiro Takeuchi , Kazuhiko Kano , Seiji Fujino , Tsuyoshi Fukada , Hiroshige Sugito , Minoru Murata , Hiroshi Muto , Hirofumi Higuchi , Kenichi Ao
IPC分类号： G01P15/08 , G01P15/125 , H01L29/84 , G01L1/00
CPC分类号： G01P15/125 , G01P15/0802 , G01P2015/0814
摘要： A semiconductor accelerometer device is formed on an SOI substrate by micro-machining. A movable unit is supported at both ends, and a weight portion is movable in response to acceleration exerted in the detection direction. A movable electrode is formed in a comb shape integrally with the weight portion. A pair of fixed electrodes in a comb shape are cantilevered and interleaved with the movable electrode to face the movable electrode. A plurality of through holes is provided in the electrodes so that the electrodes have Rahmen structure which is a series of rectangular frames. This structure reduces the weight of each electrode while increasing the strength against twist force. The electrodes are less likely from breaking in response to an acceleration exerted in a direction perpendicular to the normal detection direction because of reduced weight.
摘要翻译：通过微加工在SOI衬底上形成半导体加速度计装置。可移动单元被支撑在两端，并且重量部分可响应于沿检测方向施加的加速度而移动。可动电极与配重部一体地形成为梳形。一对梳状的固定电极是悬臂式的，与可动电极交错而面对可动电极。多个通孔设置在电极中，使得电极具有Rahmen结构，其是一系列矩形框架。这种结构减小了每个电极的重量，同时增加了抗扭力的强度。由于重量减轻，电极响应于垂直于正常检测方向的方向的加速度而不太可能破裂。

3. 发明授权

US06287885B1 Method for manufacturing semiconductor dynamic quantity sensor 有权
公开(公告)号：US06287885B1
公开(公告)日：2001-09-11
申请号：US09306381
申请日：1999-05-06
申请人： Hiroshi Muto , Tsuyoshi Fukada , Masakazu Terada , Hiroshige Sugito , Masakazu Kanosue , Shinji Yoshihara , Shoji Ozoe , Seiji Fujino , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama , Toshio Yamamoto , Kazushi Asami
发明人： Hiroshi Muto , Tsuyoshi Fukada , Masakazu Terada , Hiroshige Sugito , Masakazu Kanosue , Shinji Yoshihara , Shoji Ozoe , Seiji Fujino , Minekazu Sakai , Minoru Murata , Yukihiro Takeuchi , Seiki Aoyama , Toshio Yamamoto , Kazushi Asami
IPC分类号： H01L21302
CPC分类号： B81C1/00936 , B81B3/0005 , B81B2201/0235 , B81B2201/025 , B81B2203/0136 , B81B2203/033 , B81B2203/04 , B81C2201/0132 , B81C2201/053 , B81C2201/112 , G01P15/0802 , G01P15/125 , G01P2015/0814 , G01P2015/084
摘要： In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.

4. 发明授权

US5654244A Process for producing semiconductor strain-sensitive sensor 失效
标题翻译：生产半导体应变敏感传感器的工艺
公开(公告)号：US5654244A
公开(公告)日：1997-08-05
申请号：US427960
申请日：1995-04-26
申请人： Minekazu Sakai , Tsuyoshi Fukada , Hiroshige Sugito
发明人： Minekazu Sakai , Tsuyoshi Fukada , Hiroshige Sugito
IPC分类号： G01L1/22 , G01L9/00 , H01L29/84 , H01L21/46
CPC分类号： G01L9/0042
摘要： In the present invention, a first protective layer formed over a diaphragm is prevented from being etched unnecessarily at the time of etching a second protective layer, and the detection accuracy of the diaphragm is improved.In a process for producing a semiconductor pressure sensor, a first protective layer 4, a metal layer 8 and a second protective layer 6 are successively formed by deposition over a diaphragm 1a, and the second protective layer 6 is removed by etching so that the second protective layer 6 is left on a predetermined portion of an electrode 5. Since the metal layer 8 acts as an etching stopper layer at the time of removing the second protective layer 6 by etching, the first protective layer 4 over the diaphragm 1a is prevented from being etched. The metal layer 8 is removed by etching thereafter so that only the first protective layer 4 is formed over the diaphragm 1a.
摘要翻译：在本发明中，在蚀刻第二保护层时防止在隔膜上形成的第一保护层不必要地被蚀刻，并且提高了隔膜的检测精度。在制造半导体压力传感器的工艺中，通过在隔膜1a上沉积来连续地形成第一保护层4，金属层8和第二保护层6，并且通过蚀刻去除第二保护层6，使得第二保护层6 保护层6留在电极5的预定部分上。由于金属层8在通过蚀刻去除第二保护层6时用作蚀刻停止层，所以防止隔膜1a上的第一保护层4 被蚀刻之后通过蚀刻除去金属层8，使得在隔膜1a上仅形成第一保护层4。

5. 发明授权

US5643803A Production method of a semiconductor dynamic sensor 失效
标题翻译：半导体动态传感器的制作方法
公开(公告)号：US5643803A
公开(公告)日：1997-07-01
申请号：US122164
申请日：1993-09-17
申请人： Tsuyoshi Fukada , Yoshimi Yoshino , Hiroshige Sugito , Minekazu Sakai
发明人： Tsuyoshi Fukada , Yoshimi Yoshino , Hiroshige Sugito , Minekazu Sakai
IPC分类号： G01P15/08 , G01P15/12 , H01L21/3063 , C25F3/12
CPC分类号： G01P15/0802 , G01P15/123 , G01P15/124 , H01L21/3063 , Y10S438/924
摘要： It is intended to provide an etching method for semiconductor devices in which the etching depth or the thickness of a thin thickness portion can be precisely controlled. According to experiment results, when a P-type substrate in which an N-type epitaxial layer is formed is immersed in an etching solution such as KOH or the like, and a voltage for reverse bias of PN junction is applied between an electrode plate opposing the substrate and the epitaxial layer to perform electrochemical etching, it has been found that the distance from the PN junction plane to the etching stop position is approximately equal to a depletion layer width at the substrate side of the PN junction portion. Namely, the etching stops at the forward end of the depletion layer. Therefore, the junction depletion layer width at the substrate side is controlled to be a size obtained by subtracting a necessary depth for etching from a thickness of the semiconductor substrate except for the semiconductor layer, so that the etching depth or the thickness of the thin thickness portion remaining after etching can be precisely controlled.
摘要翻译：旨在为半导体器件提供蚀刻方法，其中可以精确地控制蚀刻深度或厚度厚度部分的厚度。根据实验结果，当将形成有N型外延层的P型衬底浸入诸如KOH等的蚀刻溶液中时，将PN结的反向偏压施加在相对的电极板之间衬底和外延层进行电化学蚀刻，已经发现从PN结面到蚀刻停止位置的距离近似等于PN结部分的衬底侧的耗尽层宽度。也就是说，蚀刻在耗尽层的前端停止。因此，将衬底侧的结耗尽层宽度控制为通过从除了半导体层之外的半导体衬底的厚度减去所需的蚀刻深度获得的尺寸，使得蚀刻深度或厚度厚度可以精确地控制蚀刻后残留的部分。

6. 发明授权

US5408112A Semiconductor strain sensor having improved resistance to bonding strain effects 失效
标题翻译：半导体应变传感器具有改善的耐结合应变效应
公开(公告)号：US5408112A
公开(公告)日：1995-04-18
申请号：US91068
申请日：1993-07-14
申请人： Akira Tai , Toshitaka Yamada , Yoshinori Fujihashi , Tsuyoshi Fukada , Hirohito Shioya , Yoshimi Yoshino , Hiroshige Sugito
发明人： Akira Tai , Toshitaka Yamada , Yoshinori Fujihashi , Tsuyoshi Fukada , Hirohito Shioya , Yoshimi Yoshino , Hiroshige Sugito
IPC分类号： G01B7/16 , G01P15/08 , G01P15/12 , H01L29/84
CPC分类号： G01B7/20 , G01P15/0802 , G01P15/123 , G01P2015/0828 , H01L2224/48091 , H01L2924/10253
摘要： A semiconductor strain sensor includes a base, a peripheral section, a central section and a flexible beam. The peripheral section is bent to the base. Bonding strain is generated at a bonding portion between the base and the peripheral section. The central section extends from the peripheral section. The flexible beam extends from the central section and includes a strain detecting element. The strain detecting element changes its electric characteristic when strain is applied thereto. A thickness of the flexible beam is thinner than that of the central section. The bonding strain is transmitted from the bonding portion to the strain detecting element through a transmission path. The transmission path is bent. The bonding strain is attenuated because it is dispersed at a bending portion of the transmission path. The sensor accurately detects the strain to be detected without a bad influence of the bonding strain.
摘要翻译：半导体应变传感器包括基座，外围部分，中心部分和柔性梁。外围部分弯曲到基部。在基部和周边部之间的接合部分产生接合应变。中央部分从外围部分延伸。柔性梁从中心部分延伸并且包括应变检测元件。当应变应变时，应变检测元件改变其电特性。柔性梁的厚度比中央部分的厚度薄。接合应变通过传输路径从结合部分传递到应变检测元件。传输路径弯曲。粘合应变由于分散在传输路径的弯曲部分而衰减。传感器精确地检测待检测的应变，而不受粘合应变的不良影响。

7. 发明授权

US5869876A Semiconductor strain sensor 失效
标题翻译：半导体应变传感器
公开(公告)号：US5869876A
公开(公告)日：1999-02-09
申请号：US788169
申请日：1997-01-24
申请人： Seiichiro Ishio , Kenichi Ao , Hiroshige Sugito
发明人： Seiichiro Ishio , Kenichi Ao , Hiroshige Sugito
IPC分类号： G01P15/08 , G01P15/12 , H01L29/84 , H01L29/82 , H01L27/20
CPC分类号： G01P15/0802 , G01P15/124 , H01L29/84 , G01P2015/0814
摘要： A semiconductor strain sensor has a gauge forming region on a p-type substrate surrounded by a p-type isolation region that reaches the p-type substrate. The p-type substrate is etched so that the entire bottom surface of the gauge forming region is covered by the p-type substrate, and the p-type substrate or p-type isolation region is not exposed to the etched recess portion or isolation groove, each of which have a relatively high number of defects. Thus, leakage current at the PN junction can be decreased to decrease a variation in the potential of the gauge forming region.
摘要翻译：半导体应变传感器在由p型隔离区域包围的p型衬底上具有到达p型衬底的量规形成区域。蚀刻p型基板，使得量规形成区域的整个底面被p型基板覆盖，并且p型基板或p型隔离区域不暴露于蚀刻的凹部或隔离槽，每个都具有相对较多数量的缺陷。因此，可以减小PN结处的漏电流，以减小量规形成区域的电位变化。

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