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1. 发明申请

US20100269285A1 APPARATUS AND SYSTEM FOR CLEANING SUBSTRATE 失效
标题翻译：用于清洁基板的装置和系统
公开(公告)号：US20100269285A1
公开(公告)日：2010-10-28
申请号：US12431731
申请日：2009-04-28
申请人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
发明人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , Y10S134/902
摘要： An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially unidirectional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.
摘要翻译：上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。上下处理头可以分别包括顶侧和底部模块的多个实例。

2. 发明授权

US08900374B2 Method for substrate cleaning including movement of substrate below substrate cleaning module 有权
标题翻译：基材清洗方法，包括基板清洗模块下方的基板运动
公开(公告)号：US08900374B2
公开(公告)日：2014-12-02
申请号：US12942446
申请日：2010-11-09
申请人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
发明人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
IPC分类号： B08B3/04 , H01L21/67
CPC分类号： H01L21/67051 , Y10S134/902
摘要： A substrate is moved below a substrate cleaning module in a direction extending from a leading edge to a trailing edge of the substrate cleaning module. A cleaning material is dispensed downward toward a top surface of the substrate along the leading edge of the substrate cleaning module. A rinsing material is dispensed downward toward the top surface of the substrate along the trailing edge of the substrate cleaning module to generate a rinsing meniscus. Vacuum suction is applied at a vacuum suction location along a bottom surface of the substrate cleaning module and parallel to the leading and trailing edges of the substrate cleaning module. The vacuum location is positioned between a dispense location of the cleaning material and a dispense location of the rinsing material. A plenum region located between the dispense location of the cleaning material and the vacuum location is vented.
摘要翻译：衬底沿着从衬底清洁模块的前缘延伸到后缘的方向移动到衬底清洁模块下方。清洁材料沿着衬底清洁模块的前缘朝向衬底的顶表面向下分配。冲洗材料沿衬底清洁模块的后缘向下分配到衬底的顶表面，以产生漂洗弯液面。真空抽吸沿着基板清洁模块的底表面在真空抽吸位置处并且平行于基板清洁模块的前缘和后缘施加。真空位置位于清洁材料的分配位置和冲洗材料的分配位置之间。位于清洁材料的分配位置和真空位置之间的集气室区域被排出。

3. 发明申请

US20110048467A1 Apparatus and System for Cleaning Substrate 审中-公开
标题翻译：清洗基板的设备和系统
公开(公告)号：US20110048467A1
公开(公告)日：2011-03-03
申请号：US12942446
申请日：2010-11-09
申请人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
发明人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
IPC分类号： B08B3/00
CPC分类号： H01L21/67051 , Y10S134/902
摘要： An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.
摘要翻译：上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。上下处理头可以分别包括顶侧和底部模块的多个实例。

4. 发明授权

US07849554B2 Apparatus and system for cleaning substrate 失效
标题翻译：用于清洁衬底的设备和系统
公开(公告)号：US07849554B2
公开(公告)日：2010-12-14
申请号：US12431731
申请日：2009-04-28
申请人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
发明人： Cheng-Yu (Sean) Lin , Mark Kawaguchi , Mark Wilcoxson , Russell Martin , Leon Ginzburg
IPC分类号： A47L9/08
CPC分类号： H01L21/67051 , Y10S134/902
摘要： An upper processing head includes a topside module defined to apply a cleaning material to a top surface of a substrate and then expose the substrate to a topside rinsing meniscus. The topside module is defined to flow a rinsing material through the topside rinsing meniscus in a substantially uni-directional manner towards the cleaning material and opposite a direction of movement of the substrate. A lower processing head includes a bottomside module defined to apply a bottomside rinsing meniscus to the substrate so as to balance a force applied to the substrate by the topside rinsing meniscus. The bottomside module is defined to provide a drain channel for collecting and draining the cleaning material dispensed from the upper processing head when the substrate is not present between the upper and lower processing heads. The upper and lower processing heads can include multiple instantiations of the topside and bottomside modules, respectively.
摘要翻译：上加工头包括顶层模块，其定义为将清洁材料施加到基板的顶表面，然后将基板暴露于顶侧冲洗弯液面。顶部模块被定义为使冲洗材料以基本上单向的方式流过顶侧冲洗弯液面朝向清洁材料并与衬底的移动方向相反。下处理头包括底部模块，所述底部模块限定为将底部冲洗弯液面施加到基底，以平衡由顶侧冲洗弯液面施加到基底的力。底部模块被限定为当衬底不存在于上加工头和下加工头之间时，提供用于收集和排出从上加工头分配的清洁材料的排水通道。上下处理头可以分别包括顶侧和底部模块的多个实例。

5. 发明申请

US20100288311A1 Multi-Stage Substrate Cleaning Method and Apparatus 有权
标题翻译：多阶段基板清洗方法及装置
公开(公告)号：US20100288311A1
公开(公告)日：2010-11-18
申请号：US12465594
申请日：2009-05-13
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： B08B3/04
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。冲洗液的第一次应用是在基材的表面上进行，从基材的表面冲洗清洗材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

6. 发明授权

US08757177B2 Multi-stage substrate cleaning method and apparatus 有权
标题翻译：多级基板清洗方法及装置
公开(公告)号：US08757177B2
公开(公告)日：2014-06-24
申请号：US13670006
申请日：2012-11-06
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： H01L21/673
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

7. 发明申请

US20130068261A1 MULTI-STAGE SUBSTRATE CLEANING METHOD AND APPARATUS 有权
标题翻译：多级基板清洗方法和装置
公开(公告)号：US20130068261A1
公开(公告)日：2013-03-21
申请号：US13670006
申请日：2012-11-06
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： B08B3/04
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

8. 发明授权

US08317934B2 Multi-stage substrate cleaning method and apparatus 有权
标题翻译：多级基板清洗方法及装置
公开(公告)号：US08317934B2
公开(公告)日：2012-11-27
申请号：US12465594
申请日：2009-05-13
申请人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
发明人： Arnold Kholodenko , Katrina Mikhaylichenko , Cheng-Yu (Sean) Lin , Mark Wilcoxson , Leon Ginzburg , Mark Kawaguchi
IPC分类号： B08B5/04 , B08B3/00 , B08B7/04
CPC分类号： B08B3/041 , H01L21/02057 , H01L21/67051
摘要： A first application of a cleaning material is made to a surface of a substrate. The cleaning material includes one or more viscoelastic materials for entrapping contaminants present on the surface of the substrate. A first application of a rinsing fluid is made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate. The first application of the rinsing fluid is also performed to leave a residual thin film of the rinsing fluid on the surface of the substrate. A second application of the cleaning material is made to the surface of the substrate having the residual thin film of rinsing fluid present thereon. A second application of the rinsing fluid is then made to the surface of the substrate so as to rinse the cleaning material from the surface of the substrate.
摘要翻译：对基材的表面进行清洁材料的第一次施加。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种粘弹性材料。冲洗流体的第一次施加是在基材的表面上，以从基材的表面上冲洗清洁材料。洗涤液的第一次施加也被执行以在衬底的表面上留下漂洗液的残余薄膜。清洁材料的第二次应用是在其上具有残留的冲洗液薄膜的基板的表面上。然后将冲洗流体的第二次应用制成到基材的表面，以便从基材的表面漂洗清洁材料。

9. 发明申请

US20100126528A1 Confinement of Foam Delivered by a Proximity Head 有权
标题翻译：泡沫的限制由接近头部交付
公开(公告)号：US20100126528A1
公开(公告)日：2010-05-27
申请号：US12324316
申请日：2008-11-26
申请人： Arnold Kholodenko , Cheng-Yu (Sean) Lin , Leon Ginzburg , Mark Mandelboym , Gregogry A. Tomasch , Anwar Husain
发明人： Arnold Kholodenko , Cheng-Yu (Sean) Lin , Leon Ginzburg , Mark Mandelboym , Gregogry A. Tomasch , Anwar Husain
IPC分类号： B08B3/04 , B08B5/04
CPC分类号： H01L21/6704 , B08B3/003 , C11D11/0047 , C11D11/0058 , H01L21/67051 , H01L21/67057 , H01L21/6719 , H01L21/6776
摘要： In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.
摘要翻译：在一个示例性实施例中，线性湿式系统包括载体和室中的邻近头部。接近头包括线性布置的三个部分。第一部分在半导体晶片的上表面吸附液体，因为晶片由邻近头部下方的载体输送。第二部分被配置为使得作为非牛顿流体的清洁泡沫的膜（或弯液面）流动到晶片的上表面上。第三部分构造成当晶片被携带在邻近头部下方时，使冲洗流体膜流到晶片的上表面。第三部分围绕第二部分和第一部分部分地限定，使得第三部分和第一部分产生相对于室的清洁泡沫的限制。

10. 发明授权

US08739805B2 Confinement of foam delivered by a proximity head 有权
标题翻译：密封由接近头发送的泡沫
公开(公告)号：US08739805B2
公开(公告)日：2014-06-03
申请号：US12324316
申请日：2008-11-26
申请人： Arnold Kholodenko , Cheng-Yu (Sean) Lin , Leon Ginzburg , Mark Mandelboym , Gregory A. Tomasch , Anwar Husain
发明人： Arnold Kholodenko , Cheng-Yu (Sean) Lin , Leon Ginzburg , Mark Mandelboym , Gregory A. Tomasch , Anwar Husain
IPC分类号： B08B3/04
CPC分类号： H01L21/6704 , B08B3/003 , C11D11/0047 , C11D11/0058 , H01L21/67051 , H01L21/67057 , H01L21/6719 , H01L21/6776
摘要： In an example embodiment, a linear wet system includes a carrier and a proximity head in a chamber. The proximity head includes three sections in a linear arrangement. The first section suctions liquid from the upper surface of a semiconductor wafer as the wafer is transported by the carrier under the proximity head. The second section is configured to cause a film (or meniscus) of cleaning foam which is a non-Newtonian fluid to flow onto the upper surface of the wafer. The third section is configured to cause a film of rinsing fluid to flow onto the upper surface of the wafer as the wafer is carried under the proximity head. The third section is defined partially around the second section and up to the first section, so that the third section and the first section create a confinement of the cleaning foam with respect to the chamber.
摘要翻译：在一个示例性实施例中，线性湿式系统包括载体和室中的邻近头部。接近头包括线性布置的三个部分。第一部分在半导体晶片的上表面吸附液体，因为晶片由邻近头部下方的载体输送。第二部分被配置为使得作为非牛顿流体的清洁泡沫的膜（或弯液面）流动到晶片的上表面上。第三部分构造成当晶片被携带在邻近头部下方时，使冲洗流体膜流到晶片的上表面。第三部分围绕第二部分和第一部分部分地限定，使得第三部分和第一部分产生相对于室的清洁泡沫的限制。

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