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1. 发明授权

US08051863B2 Methods of and apparatus for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus 有权
标题翻译：通过配方控制的弯月面在晶片表面处理中将间隙值与弯液面稳定性相关联的方法和装置
公开(公告)号：US08051863B2
公开(公告)日：2011-11-08
申请号：US12246461
申请日：2008-10-06
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Apparatus monitors a meniscus process that is performed on wafers. Monitoring data for a current process received by a processor indicates characteristics of a gap between the wafer and a process head. The processor is configured to respond to the data that is in the form of orientation monitor signals and to respond to a current recipe. The processor generates meniscus monitor signals for allowing the meniscus to remain stable in further meniscus processing. The monitoring is of current meniscus processing to determine whether a current gap (i) is other than a desired gap of the current recipe, and (ii) corresponds to a stable meniscus. If so, a calibration recipe is identified as specifying the current gap. This calibration recipe specifies parameters for meniscus processing the wafer surface with the current gap. The meniscus processing of the wafer surface is continued using the parameters specified by the identified calibration recipe.
摘要翻译：仪器监测在晶片上进行的弯液面过程。由处理器接收的当前处理的监视数据指示晶片和处理头之间的间隙的特征。处理器被配置为响应以定向监视器信号的形式的数据并响应当前配方。处理器产生弯液面监测信号，以允许弯液面在进一步的弯液面处理中保持稳定。监测目前的弯液面处理以确定当前间隙（i）是否不同于当前配方的期望间隙，并且（ii）对应于稳定的弯液面。如果是这样，则校准配方被识别为指定当前间隙。该校准配方规定了具有当前间隙的晶片表面弯月面处理的参数。使用由所标识的校准配方指定的参数继续晶片表面的弯液面处理。

2. 发明申请

US20090101173A1 METHODS OF AND APPARATUS FOR CORRELATING GAP VALUE TO MENISCUS STABILITY IN PROCESSING OF A WAFER SURFACE BY A RECIPE-CONTROLLED MENISCUS 有权
标题翻译：方法和装置，用于通过受控控制的菜单将水平值与相对稳定性相关联
公开(公告)号：US20090101173A1
公开(公告)日：2009-04-23
申请号：US12246461
申请日：2008-10-06
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Apparatus monitors a meniscus process that is performed on wafers. Monitoring data for a current process received by a processor indicates characteristics of a gap between the wafer and a process head. The processor is configured to respond to the data that is in the form of orientation monitor signals and to respond to a current recipe. The processor generates meniscus monitor signals for allowing the meniscus to remain stable in further meniscus processing. The monitoring is of current meniscus processing to determine whether a current gap (i) is other than a desired gap of the current recipe, and (ii) corresponds to a stable meniscus. If so, a calibration recipe is identified as specifying the current gap. This calibration recipe specifies parameters for meniscus processing the wafer surface with the current gap. The meniscus processing of the wafer surface is continued using the parameters specified by the identified calibration recipe.
摘要翻译：仪器监测在晶片上进行的弯液面过程。由处理器接收的当前处理的监视数据指示晶片和处理头之间的间隙的特征。处理器被配置为响应以定向监视器信号的形式的数据并响应当前配方。处理器产生弯液面监测信号，以允许弯液面在进一步的弯液面处理中保持稳定。监测目前的弯液面处理以确定当前间隙（i）是否不同于当前配方的期望间隙，并且（ii）对应于稳定的弯液面。如果是这样，则校准配方被识别为指定当前间隙。该校准配方规定了具有当前间隙的晶片表面弯月面处理的参数。使用由所标识的校准配方指定的参数继续晶片表面的弯液面处理。

3. 发明申请

US20070054496A1 Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof 有权
标题翻译：用于从低k介电材料去除光致抗蚀剂和后蚀刻残留物的气体混合物及其使用方法
公开(公告)号：US20070054496A1
公开(公告)日：2007-03-08
申请号：US11220710
申请日：2005-09-08
申请人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
发明人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
IPC分类号： B08B6/00 , H01L21/461 , H01L21/302 , B44C1/22
CPC分类号： G03F7/427
摘要： Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.
摘要翻译：在氧气剥离等离子体中产生的原子氧在电介质蚀刻残留物的剥离期间与低k电介质材料反应并损坏。尽管在剥离电介质后蚀刻残留物时低k电介质材料的损伤随氢气剥离等离子体而降低，但氢气剥离等离子体显示较低的剥离速率。在氢气剥离等离子体中包含氧气可改善光致抗蚀剂剥离速率和均匀性，同时保持氢气与氧气的比例可以避免低k电介质材料损坏。

4. 发明申请

US20140083463A1 SYSTEM AND METHOD FOR MONITORING WAFER STRESS 审中-公开
标题翻译：用于监测波浪应力的系统和方法
公开(公告)号：US20140083463A1
公开(公告)日：2014-03-27
申请号：US13624138
申请日：2012-09-21
申请人： John Valcore , Mark Kawaguchi , Cristian Paduraru
发明人： John Valcore , Mark Kawaguchi , Cristian Paduraru
IPC分类号： B08B5/04
CPC分类号： H01L21/67253
摘要： A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.
摘要翻译：一种使用可操作以沉积液体并通过负压去除液体的处理系统的方法。该方法包括将装置设置成具有通过处理系统沉积在其上的液体中的至少一种，以及由处理系统从其中移出的液体。该装置具有设置在其上的传感器部分。传感器部分可以基于与由处理系统沉积在其上的液体中的至少一种相关的压力提供传感器信号，并且由处理系统从其中除去的液体。该方法还包括执行由处理系统将液体沉积到装置上并且由处理系统从装置中去除液体中的至少一种。该方法还包括通过传感器部分基于与被沉积到装置上的液体中的至少一种相关的压力和从装置移除的液体来提供传感器信号。

5. 发明申请

US20120006359A1 METHODS FOR CORRELATING GAP VALUE TO MENISCUS STABILITY IN PROCESSING OF A WAFER SURFACE BY A RECIPE-CONTROLLED MENISCUS 有权
标题翻译：通过受控控制的菜单将水平值与沟道稳定性相关联的方法
公开(公告)号：US20120006359A1
公开(公告)日：2012-01-12
申请号：US13241122
申请日：2011-09-22
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Methods for monitoring meniscus processing of a wafer surface to stabilize a meniscus are provided. In one example, the processing is in response to a current recipe that defines a desired gap between the wafer surface and a proximity head. The method includes the operations of monitoring current meniscus processing to determine that a current gap is other than the desired gap, and identifying a calibration recipe that specifies the current gap. The method then continues the meniscus processing of the wafer surface using process parameters specified by the identified calibration recipe.
摘要翻译：提供了用于监测晶片表面的弯月面处理以稳定弯液面的方法。在一个示例中，处理响应于限定晶片表面和邻近头之间的期望间隙的当前配方。该方法包括监视当前弯月面处理以确定当前间隙不是期望间隙的操作，以及识别指定当前间隙的校准配方。然后，该方法使用由所识别的校准配方指定的过程参数来继续晶片表面的弯液面处理。

6. 发明授权

US07479457B2 Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof 有权
标题翻译：用于从低k介电材料去除光致抗蚀剂和后蚀刻残留物的气体混合物及其使用方法
公开(公告)号：US07479457B2
公开(公告)日：2009-01-20
申请号：US11220710
申请日：2005-09-08
申请人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
发明人： Cristian Paduraru , Alan Jensen , David Schaefer , Robert Charatan , Tom Choi
IPC分类号： H01L21/461
CPC分类号： G03F7/427
摘要： Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.
摘要翻译：在氧气剥离等离子体中产生的原子氧在电介质蚀刻残留物的剥离期间与低k电介质材料反应并损坏。尽管在剥离电介质后蚀刻残留物时低k电介质材料的损伤随氢气剥离等离子体而降低，但氢气剥离等离子体显示较低的剥离速率。在氢气剥离等离子体中包含氧气可改善光致抗蚀剂剥离速率和均匀性，同时保持氢气与氧气的比例可以避免低k电介质材料损坏。

7. 发明授权

US08293023B2 System and method for monitoring wafer stress 失效
标题翻译：用于监测晶片应力的系统和方法
公开(公告)号：US08293023B2
公开(公告)日：2012-10-23
申请号：US12616415
申请日：2009-11-11
申请人： John Valcore , Mark Kawaguchi , Cristian Paduraru
发明人： John Valcore , Mark Kawaguchi , Cristian Paduraru
IPC分类号： B08B7/04
CPC分类号： H01L21/67253 , H01L21/67051
摘要： A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.
摘要翻译：一种使用可操作以沉积液体并通过负压去除液体的处理系统的方法。该方法包括将装置设置成具有通过处理系统沉积在其上的液体中的至少一种，以及由处理系统从其中移出的液体。该装置具有设置在其上的传感器部分。传感器部分可以基于与由处理系统沉积在其上的液体中的至少一种相关的压力提供传感器信号，并且由处理系统从其中除去的液体。该方法还包括执行由处理系统将液体沉积到装置上并且由处理系统从装置中去除液体中的至少一种。该方法还包括通过传感器部分基于与被沉积到装置上的液体中的至少一种相关的压力和从装置移除的液体来提供传感器信号。

8. 发明授权

US08287656B2 Methods for correlating gap value to meniscus stability in processing of a wafer surface by a recipe-controlled meniscus 有权
标题翻译：通过配方控制的弯液面在晶片表面处理中将间隙值与弯液面稳定性相关联的方法
公开(公告)号：US08287656B2
公开(公告)日：2012-10-16
申请号：US13241122
申请日：2011-09-22
申请人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
发明人： G. Grant Peng , Cristian Paduraru , Katrina Mikhaylich
IPC分类号： B08B3/04
CPC分类号： H01L21/67051 , H01L21/67034 , Y10S134/902
摘要： Methods for monitoring meniscus processing of a wafer surface to stabilize a meniscus are provided. In one example, the processing is in response to a current recipe that defines a desired gap between the wafer surface and a proximity head. The method includes the operations of monitoring current meniscus processing to determine that a current gap is other than the desired gap, and identifying a calibration recipe that specifies the current gap. The method then continues the meniscus processing of the wafer surface using process parameters specified by the identified calibration recipe.
摘要翻译：提供了用于监测晶片表面的弯月面处理以稳定弯液面的方法。在一个示例中，处理响应于限定晶片表面和邻近头之间的期望间隙的当前配方。该方法包括监视当前弯月面处理以确定当前间隙不是期望间隙的操作，以及识别指定当前间隙的校准配方。然后，该方法使用由所识别的校准配方指定的过程参数来继续晶片表面的弯液面处理。

9. 发明申请

US20110094538A1 SYSTEM AND METHOD FOR MONITORING WAFER STRESS 失效
标题翻译：用于监测波浪应力的系统和方法
公开(公告)号：US20110094538A1
公开(公告)日：2011-04-28
申请号：US12616415
申请日：2009-11-11
申请人： John Valcore , Mark Kawaguchi , Cristian Paduraru
发明人： John Valcore , Mark Kawaguchi , Cristian Paduraru
IPC分类号： B08B3/04 , G05D16/00 , G01L19/12
CPC分类号： H01L21/67253 , H01L21/67051
摘要： A method of using a processing system that is operable to deposit liquid and to remove liquid by way of negative pressure. The method includes arranging a device to have at least one of the liquid deposited thereon by the processing system and the liquid removed therefrom by the processing system. The device has a sensor portion disposed thereon. The sensor portion can provide a sensor signal based on pressure related to the at least one of the liquid being deposited thereon by the processing system and the liquid being removed therefrom by the processing system. The method further includes performing at least one of depositing, by the processing system, the liquid onto the device and removing the liquid, by the processing system, from the device. The method still further includes providing the sensor signal, by the sensor portion, based on the pressure related to the at least one of the liquid being deposited onto the device and the liquid being removed from the device.
摘要翻译：一种使用可操作以沉积液体并通过负压去除液体的处理系统的方法。该方法包括将装置设置成具有通过处理系统沉积在其上的液体中的至少一种，以及由处理系统从其中移出的液体。该装置具有设置在其上的传感器部分。传感器部分可以基于与由处理系统沉积在其上的液体中的至少一种相关的压力提供传感器信号，并且由处理系统从其中除去的液体。该方法还包括执行由处理系统将液体沉积到装置上并且由处理系统从装置中去除液体中的至少一种。该方法还包括通过传感器部分基于与被沉积到装置上的液体中的至少一种相关的压力和从装置移除的液体来提供传感器信号。

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