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1. 发明授权

US6157444A Defect inspection apparatus for silicon wafer 有权
标题翻译：硅片缺陷检查装置
公开(公告)号：US6157444A
公开(公告)日：2000-12-05
申请号：US198644
申请日：1998-11-24
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N21/95 , G01N21/88
CPC分类号： G01N21/9505 , G01N21/9501
摘要： In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.
摘要翻译：为了容易地评估影响器件特性的硅晶片的缺陷，本发明提供了一种用于检测存在于样品表面和/或样品内部的缺陷的缺陷检查装置，其包括显示装置基于由检测装置获得的深度信息和位置信息，在具有距离样本的中心位置的距离的坐标轴和存在缺陷的深度的图形上的缺陷的分布。

2. 发明授权

US06384909B2 Defect inspection method and apparatus for silicon wafer 有权
公开(公告)号：US06384909B2
公开(公告)日：2002-05-07
申请号：US09842929
申请日：2001-04-27
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N2188
CPC分类号： G01N21/9505 , G01N21/9501
摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

3. 发明授权

US06256092B1 Defect inspection apparatus for silicon wafer 有权
标题翻译：硅片缺陷检查装置
公开(公告)号：US06256092B1
公开(公告)日：2001-07-03
申请号：US09198093
申请日：1998-11-23
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N2188
CPC分类号： G01N21/9505 , G01N21/9501
摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
摘要翻译：一种缺陷检查装置，用于根据来自通过将光束照射在样品上的样品的光信息，检测存在于半导体样品表面和/或样品内部的缺陷，该检测装置包括检测装置，存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

4. 发明授权

US06683683B2 Defect inspection method and apparatus for silicon wafer 失效
标题翻译：硅片缺陷检查方法及装置
公开(公告)号：US06683683B2
公开(公告)日：2004-01-27
申请号：US10084059
申请日：2002-02-28
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N2188
CPC分类号： G01N21/9505 , G01N21/9501
摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
摘要翻译：提供了一种用于根据从将样本照射光束获得的样本的光信息检测存在于半导体样品表面和/或样品内部的缺陷的缺陷检查装置，其包括检测装置，存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

5. 发明授权

US06191849B1 Wafer inspecting apparatus 有权
标题翻译：晶圆检查仪
公开(公告)号：US06191849B1
公开(公告)日：2001-02-20
申请号：US09219873
申请日：1998-12-24
申请人： Muneo Maeshima , Kazuo Takeda , Shigeru Matsui
发明人： Muneo Maeshima , Kazuo Takeda , Shigeru Matsui
IPC分类号： G01N2147
CPC分类号： G01N21/9501 , G01N21/9505
摘要： Disclosed is a wafer inspecting apparatus suitable to determine whether a scattering substance is a surface foreign matter or an internal defect even if the particle size of the scattering substance is smaller than the wavelength of irradiation rays used for inspection. The wafer is obliquely irradiated with irradiation rays at the Brewster angle, and scattered rays which are scattered from a scattering substance on or in the wafer are detected at and angle 0° and an angle of the Brewster angle or more by detectors. Then, it is determined whether the scattering substance is a surface foreign matter or an internal defect on the basis of a ratio between the intensities of the scattered rays detected by the detectors. The intensity of scattered rays which are scattered from a surface foreign matter and detected at an angle of the Brewster angle or more is larger than the intensity of scattered rays which are scattered from the foreign matter and detected at an angle 0°, and the intensity of scattered rays which are scattered from an internal defect and detected at an angle of the Brewster angle or more is smaller than the intensity of scattered rays which are scattered from the internal defect and detected at an angle 0°. This makes it possible to distinguish the surface foreign matter and the internal defect from each other.
摘要翻译：公开了一种适用于确定散射物质是表面异物还是内部缺陷的晶片检查装置，即使散射物质的粒径小于用于检查的照射射线的波长。以布鲁斯特角度的照射光线倾斜照射晶片，从晶片上或晶片上的散射物质散射的散射光线以0°的角度和布鲁斯特角度以上的角度检测。然后，基于由检测器检测到的散射光线的强度之间的比例来确定散射物质是表面异物还是内部缺陷。从表面异物散射并以布鲁斯特角度以上的角度检测的散射光的强度大于从异物散射并以0°的角度检测的散射光的强度，强度从内部缺陷散射并以布鲁斯特角度以上的角度检测的散射光的散射光小于从内部缺陷散射并以0°的角度检测的散射光的强度。这使得可以将表面异物和内部缺陷彼此区分开。

6. 发明授权

US6108079A Method for measuring crystal defect and equipment using the same 有权
标题翻译：测量晶体缺陷的方法及使用其的设备
公开(公告)号：US6108079A
公开(公告)日：2000-08-22
申请号：US245195
申请日：1999-02-05
申请人： Muneo Maeshima , Kazuo Takeda , Isao Nemoto , Shigeru Matsui , Yoshitaka Kodama
发明人： Muneo Maeshima , Kazuo Takeda , Isao Nemoto , Shigeru Matsui , Yoshitaka Kodama
IPC分类号： G01N21/88 , G01N21/25 , G01N21/47 , G01N21/95 , G01N21/956 , H01L21/66 , G01N21/00 , G01N21/86
CPC分类号： G01N21/9501 , H01L22/12 , H01L2924/0002
摘要： In order to measure an inner defect of a sample with a certain high accuracy even if the sample surface of the moved up and down by flatness irregularity of the sample and problem on accuracy of the sample movement stage, incident light beams having two wavelength and respective different penetration depths for the sample are slantingly irradiated on the surface of the moving sample 15 from irradiation optical systems 4, 8, and the inner defect of the sample is measured by detecting the scattering light occurred from the interior of the sample with a detection optical system 9 arranged over the sample surface. A distance measurement means 14 is located in an upstream of a movement direction of said sample than said irradiation optical system 4, 8 and said detection optical system 9, thereby a surface height of said sample is measured. When a measured point on sample measured by the distance measurement means 14 is arrived at a lower part of the detection optical system 9, height positions of the irradiation optical system and the detection optical system are controlled by piezo electric elements 11,12,13 so that the irradiation optical system and the detection optical system are located at predetermined positions relating to the measured point.
摘要翻译：为了以一定的高精度测量样品的内部缺陷，即使样品的平坦度不均匀性上下移动的样品表面和样品移动台的精度问题，具有两个波长的入射光束和相应的样品的不同穿透深度从照射光学系统4,8倾斜地照射在移动样品15的表面上，并且通过用检测光学检测从样品内部发生的散射光来测量样品的内部缺陷系统9布置在样品表面上。距离测量装置14位于所述样品的移动方向的上游，比所述照射光学系统4,8和所述检测光学系统9，从而测量所述样品的表面高度。当通过距离测量装置14测量的样品上的测量点到达检测光学系统9的下部时，照射光学系统和检测光学系统的高度位置由压电元件11,12,13所控制照射光学系统和检测光学系统位于与测量点相关的预定位置处。

7. 发明授权

US06226079B1 Defect assessing apparatus and method, and semiconductor manufacturing method 有权
标题翻译：缺陷评估装置和方法以及半导体制造方法
公开(公告)号：US06226079B1
公开(公告)日：2001-05-01
申请号：US09161393
申请日：1998-09-29
申请人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
发明人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/47
摘要： A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.
摘要翻译：公开了一种用于揭示缺陷的尺寸和深度之间的关系的缺陷评估装置和方法以及半导体制造方法。提供了一种检测光学系统，用于检测由照射光学系统发射的至少两种不同波长的较短波长的一个光线产生的缺陷的散射光的强度，以及来自由较长波长产生的缺陷的散射光一个是相同的提供了一种计算装置，用于根据由检测光学系统检测的来自较短波长的衍射的散射光强度和由较长波长的光导出的值，确定对应于缺陷尺寸的值和对应于缺陷的另一个值深度。提供显示装置，用于根据由计算装置确定的缺陷尺寸和对应于缺陷深度的值，显示出显示缺陷尺寸和缺陷深度之间的关系的分布。

8. 发明授权

US08951474B2 Disposable chip-type flow cell and flow cytometer using same 有权
标题翻译：一次性片式流动池和流式细胞仪使用它
公开(公告)号：US08951474B2
公开(公告)日：2015-02-10
申请号：US13148271
申请日：2010-02-05
申请人： Kazuo Takeda
发明人： Kazuo Takeda
IPC分类号： B01L3/00 , G01N21/64 , G01N21/00 , G01N15/14
CPC分类号： G01N15/1404 , G01N15/1427 , G01N15/1459 , G01N15/1484 , G01N21/53 , G01N21/6486 , G01N33/4833 , G01N33/5005 , G01N2015/1409 , G01N2015/149 , Y10T436/101666
摘要： The present invention provides an apparatus for analyzing particles in a solution including a unit configured to place a flow cell having a flow path for flowing a sample solution containing the particles; a unit configured to illuminate the sample solution flowing through the flow path of the flow cell; a photodetector that detects a scattered light and/or fluorescence generated from the particles in the sample solution; and a unit configured to analyze the particles based on their signal intensities detected by the photodetector, wherein the flow cell has the flow path formed in a substrate, a reflection plane is formed on the side surface of the flow path, the reflection plane leads the lights generated in the flow path of the flow cell and advancing in the substrate in-plane direction to a specified region of the surface of the flow cell, and the photodetector detects the light exiting from the specified region to the outside.
摘要翻译：本发明提供了一种用于分析溶液中的颗粒的装置，包括：单元，被配置为放置具有用于流动含有颗粒的样品溶液的流动路径的流通池; 被配置为照亮流过所述流动池的流路的样品溶液的单元; 检测从样品溶液中的颗粒产生的散射光和/或荧光的光电检测器; 以及基于由所述光检测器检测出的信号强度来分析所述粒子的单元，其中所述流通池具有形成在基板中的流路，在所述流路的侧面形成有反射面，所述反射面将所述在流动池的流路中产生的光并且在基板的面内方向前进到流动池的表面的特定区域，并且光检测器将从指定区域射出的光检测到外部。

9. 发明授权

US08714290B2 Grille shutter device 有权
标题翻译：格栅快门装置
公开(公告)号：US08714290B2
公开(公告)日：2014-05-06
申请号：US13551791
申请日：2012-07-18
申请人： Masayuki Kitashiba , Chiharu Totani , Minoru Shibata , Kazuo Takeda
发明人： Masayuki Kitashiba , Chiharu Totani , Minoru Shibata , Kazuo Takeda
IPC分类号： B60K11/08
CPC分类号： B60K11/085 , Y02T10/88
摘要： A grille shutter device selectively opening and closing a grille opening in the front grille of a vehicle. The grille shutter device includes a fin, a motor, a transmission mechanism, a first switch, and a second switch. The fin has a support shaft, which is rotatably supported by the front grille. When supplied with electricity, the motor rotates its output shaft in one direction. The transmission mechanism converts the rotation of the output shaft to a swinging motion of the fin, thereby swinging the fin between a closed position, where the fin closes the grille opening, and an open position, where the fin opens the grille opening. When the fin is swung to the closed position, the first switch stops the motor. When the fin is swung to the open position, the second switch stops the motor.
摘要翻译：格栅快门装置选择性地打开和关闭车辆前格栅中的格栅开口。格栅快门装置包括翅片，马达，传动机构，第一开关和第二开关。翅片具有由前格栅可旋转地支撑的支撑轴。当电力供电时，电机将其输出轴沿一个方向旋转。传动机构将输出轴的旋转转换成翅片的摆动运动，从而使翅片在翅片关闭格栅开口的关闭位置和打开格栅开口的打开位置之间摆动。当翅片摆动到关闭位置时，第一个开关停止电机。当翅片摆动到打开位置时，第二个开关停止电机。

10. 发明申请

US20130302828A1 METHOD FOR DETECTING LOW CONCENTRATIONS OF SPECIFIC CELL FROM HIGH CONCENTRATIONS OF CELL POPULATIONS, AND METHOD FOR COLLECTING AND ANALYZING DETECTED CELL 有权
标题翻译：用于检测细胞群体高浓度特定细胞浓度低的方法，以及收集和分析检测细胞的方法
公开(公告)号：US20130302828A1
公开(公告)日：2013-11-14
申请号：US13885570
申请日：2011-11-21
申请人： Kazuo Takeda , Fumie Jimma , Masashi Takao
发明人： Kazuo Takeda , Fumie Jimma , Masashi Takao
IPC分类号： G01N1/30
CPC分类号： G01N33/57492 , G01N1/30 , G01N15/1436 , G01N15/1459 , G01N21/6428 , G01N33/54333 , G01N33/574 , G01N2015/1006 , G01N2015/1477 , G01N2021/6439 , G01N2201/06113 , G01N2333/705 , G01N2333/70596
摘要： Conventional CTC detection methods have been problematic in that 1) there is no technique for automatically determining and counting live CTCs in a brief period of time, 2) no process has been developed for detecting, counting, and thereafter collecting and culturing live CTCs, and 3) there exists no flow cytometer that is contamination free and is capable of measuring an entire sample. Provided is a CTC detection method which comprises a pre-treatment step for concentrating and fluorescence staining CTCs, and a step for identifying and counting CTCs. The pre-treatment step includes attaching magnetic beads to EpCAM antibodies expressed by epithelial cell-derived CTCs and concentrating the CTCs through the use of a magnet, fluorescently labeling an epithelia cell surface marker of the CTCs through the use of EpCAM antibodies or 5E11 antibodies, and performing two types of nuclear staining, one being cell membrane-permeable and the other being cell membrane-impermeable. The identifying and counting step includes evaluating the respective absolute concentrations of live and dead CTCs in a volume of blood by automatically identifying CTCs by the ratio of a plurality of fluorescence signal intensities using a flow cytometer, and differentiating between and counting the live CTCs and the dead CTCs. In the cytometer, an entire liquid-feeding system that includes a flow cell can be replaced for each sample, and the total amount of a liquid sample can be measured.
摘要翻译：传统的CTC检测方法存在问题，即1）在短时间内没有自动确定和计数活CTC的技术，2）没有开发检测，计数，之后收集和培养活的CTC的过程， 3）不存在无污染的流式细胞仪，能够测量整个样品。提供了一种CTC检测方法，其包括用于浓缩和荧光染色CTC的预处理步骤，以及用于鉴定和计数CTC的步骤。预处理步骤包括将磁珠附着到由上皮细胞衍生的CTC表达的EpCAM抗体中，并通过使用磁体浓缩CTC，通过使用EpCAM抗体或5E11抗体荧光标记CTC的上皮细胞表面标志物，并进行两种类型的核染色，一种是细胞膜可渗透的，另一种是细胞膜不可渗透的。识别和计数步骤包括通过使用流式细胞仪自动识别多个荧光信号强度的比例来自动识别CTC，并且区分和计数活CTC和死了四氯化碳。在血细胞计数器中，可以为每个样品更换包括流通池的整个液体供给系统，并且可以测量液体样品的总量。

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