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1. 发明授权

US07326623B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07326623B2
公开(公告)日：2008-02-05
申请号：US11209742
申请日：2005-08-24
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L21/336 , H01L23/58
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： Arrangements (e.g., methods) for manufacturing a display device, including irradiating an amorphous semiconductor film formed on a substrate with an excimer laser beam to convert the amorphous semiconductor film into a polycrystalline semiconductor film; and irradiating predetermined areas of the polycrystalline semiconductor film intermittently with a continuous wave laser beam while a position of the substrate with respect to the continuous wave laser beam is scanned, crystal grains larger than those of the polycrystalline semiconductor film other than the predetermined areas are formed in each of the predetermined areas locally in the polycrystalline semiconductor film, wherein first thin film transistors are formed in the predetermined areas while second thin film transistors are formed in the polycrystalline semiconductor film other than the predetermined areas thereof.
摘要翻译：包括用于制造显示装置的布置（例如，方法），包括用准分子激光束照射形成在衬底上的非晶半导体膜，以将非晶半导体膜转换为多晶半导体膜; 并且在扫描基板相对于连续波激光束的位置时，用连续波激光束间歇地照射多晶半导体膜的预定区域，形成比除了预定区域以外的多晶半导体膜的晶粒大的晶粒在多晶半导体膜中局部的每个预定区域中，其中第一薄膜晶体管形成在预定区域中，而第二薄膜晶体管形成在除了其预定区域之外的多晶半导体膜中。

2. 发明授权

US07253864B2 Active matrix display device with active element including a semiconductor film formed of an aggregate of single crystals each extending in the same direction 有权
标题翻译：具有有源元件的有源矩阵显示装置包括由沿相同方向延伸的单晶聚集体形成的半导体膜
公开(公告)号：US07253864B2
公开(公告)日：2007-08-07
申请号：US11246225
申请日：2005-10-11
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G02F1/136 , H01L29/04 , H01L21/268
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： A laser beam is selectively directed to an amorphous silicon film of a pixel portion on an active-matrix substrate of a display device to modify the amorphous silicon film into a polysilicon film. Pixel circuits such as thin film transistors are formed on the modified polysilicon film. Thus, it is possible to realize remarkably economically the display device provided with the active-matrix substrate having the high performance thin film transistor circuits.
摘要翻译：激光束被选择性地引导到显示装置的有源矩阵基板上的像素部分的非晶硅膜，以将非晶硅膜修改为多晶硅膜。像素电路如薄膜晶体管形成在改性多晶硅膜上。因此，可以显着地实现具有高性能薄膜晶体管电路的有源矩阵基板的显示装置。

3. 发明授权

US07129124B2 Display device, process of fabricating same, and apparatus for fabricating same 失效
标题翻译：显示装置及其制造方法及其制造装置
公开(公告)号：US07129124B2
公开(公告)日：2006-10-31
申请号：US10628421
申请日：2003-07-29
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L21/00 , H01I21/26
CPC分类号： H01L21/02683 , H01L21/0268 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L29/04 , H01L29/66757
摘要： The active layer (active region) of the thin-film transistor making up the driver circuit is obtained by reformation implemented by scanning the continuous-wave laser light, condensed into a linear form or a rectangle form extremely longer in the longitudinal direction than in the transverse direction, along a given direction crossing the longitudinal direction. This is made up of a poly silicon film containing crystal grains having no grain boundaries crossing the direction of current flow, that is, a band-like polycrystalline silicon film. As a result, it is possible to implement a display device having stable and high quality active elements outside the display region on the insulating substrate.
摘要翻译：构成驱动电路的薄膜晶体管的有源层（有源区）是通过扫描连续波激光而获得的，该连续波激光在纵向方向上比在横向，沿着与纵向相交的给定方向。这是由含有晶界与电流流动相交的晶粒的多晶硅膜，即带状多晶硅膜构成的。结果，可以实现在绝缘基板上的显示区域之外具有稳定且高质量的有源元件的显示装置。

4. 发明授权

US07023500B2 Display device with active-matrix transistor having silicon film modified by selective laser irradiation 失效
标题翻译：具有通过选择性激光照射改性的硅膜的有源矩阵晶体管的显示装置
公开(公告)号：US07023500B2
公开(公告)日：2006-04-04
申请号：US10345261
申请日：2003-01-16
申请人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
发明人： Hiroshi Kikuchi , Mikio Hongo , Mutsuko Hatano , Makoto Ohkura
IPC分类号： G02F1/136 , H01L21/268
CPC分类号： H01L21/02686 , H01L21/0268 , H01L21/2026 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/66765
摘要： An active matrix display device is provided which includes an active matrix substrate having a modified region which is formed by applying laser beams selectively to a silicon film formed on an insulating board. Active circuits, which include pixel circuits, are formed in the modified region. The pitch of the pixel circuits formed in a display region of the active matrix substrate, which display region is in the modified region, is set to be substantially equal to a pitch of peripheral circuits formed in the modified region in a peripheral region of the active matrix substrate. In addition, the pitch of the pixel circuits can be set to be substantially twice the pitch of the pixels themselves.
摘要翻译：提供一种有源矩阵显示装置，其包括有源矩阵基板，该有源矩阵基板具有通过选择性地对形成在绝缘板上的硅膜施加激光束而形成的改质区域。包括像素电路在内的有源电路形成在修改区域中。在显示区域处于修改区域的有源矩阵基板的显示区域中形成的像素电路的间距被设定为基本上等于在活动的周边区域中形成在修改区域中的外围电路的间距矩阵基板。此外，像素电路的间距可以被设置为基本上是像素本身的间距的两倍。

5. 发明授权

US07022558B2 Method of manufacturing an active matrix substrate and an image display device using the same 有权
标题翻译：制造有源矩阵基板的方法和使用其的图像显示装置
公开(公告)号：US07022558B2
公开(公告)日：2006-04-04
申请号：US10712712
申请日：2003-11-14
申请人： Takeshi Sato , Kazuo Takeda , Masakazu Saito , Jun Goto , Makoto Ohkura
发明人： Takeshi Sato , Kazuo Takeda , Masakazu Saito , Jun Goto , Makoto Ohkura
IPC分类号： H01L21/00
CPC分类号： H01L21/0268 , B23K26/0622 , B23K26/066 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L27/3244 , H01L29/04 , H01L29/78645
摘要： The present invention provides a manufacturing method of a high performance active matrix substrate at a high throughput with a less expensive apparatus, and an image display device using the active matrix substrate. On a stage moving in the short axis direction X and long axis direction Y on a rail, a glass substrate is carried, which has an amorphous silicon semiconductor film formed. Polycrystallized and large grain silicon film may be obtained by intensity modulating the pulsed laser beam in a line beam shape by means of a phase shift mask with a periodicity in the long axis direction Y of the laser beam, moving the laser beam randomly in the modulation direction of the amorphous silicon semiconductor film formed on the glass substrate to expose to crystallize the film. The image display device may incorporate an active matrix substrate having active elements such as thin film transistors formed by this silicon film.
摘要翻译：本发明以较低成本的装置提供高产量的高性能有源矩阵基板的制造方法以及使用有源矩阵基板的图像显示装置。在轨道上沿短轴方向X和长轴方向Y移动的台架上，承载形成有非晶硅半导体膜的玻璃基板。通过利用在激光束的长轴方向Y上具有周期性的相移掩模以线束形式对脉冲激光束进行强度调制，可以获得多晶硅和大晶粒硅膜，在激光束的随机调制在玻璃基板上形成的非晶硅半导体膜的方向露出以使膜结晶。该图像显示装置可以包括具有有源元件的有源矩阵基板，例如由该硅膜形成的薄膜晶体管。

6. 发明申请

US20050051081A1 Process for producing polysilicon film 有权
标题翻译：多晶硅薄膜生产工艺
公开(公告)号：US20050051081A1
公开(公告)日：2005-03-10
申请号：US10942911
申请日：2004-09-17
申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
发明人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
IPC分类号： G02F1/1368 , C30B13/00 , H01L21/20 , H01L21/336 , H01L21/477 , H01L21/66 , H01L29/786 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irradiation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要翻译：本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

7. 发明授权

US06861299B2 Process for manufacturing thin film transistor on unannealed glass substrate 有权
标题翻译：在非退火玻璃基板上制造薄膜晶体管的工艺
公开(公告)号：US06861299B2
公开(公告)日：2005-03-01
申请号：US10404060
申请日：2003-04-02
申请人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
发明人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
IPC分类号： G02F1/1368 , G09F9/00 , G09F9/30 , G09F9/35 , H01L21/336 , H01L29/49 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78603
摘要： Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
摘要翻译：使用廉价的未退火玻璃作为基材。掺杂有硼（B）或磷（P）的多晶硅膜的表面在臭氧处于500℃以下的处理温度下被氧化，在多晶的表面上形成厚度为4〜20nm的氧化硅膜硅。由于这种处理，可以使栅绝缘层和沟道层之间的界面处的电平密度更低，并且可以在非退火玻璃基板上形成具有较小特性变化的薄膜晶体管。

8. 发明授权

US06806099B2 Process for producing polycrystalline silicon film by crystallizing on amorphous silicon film by light irradiation 有权
标题翻译：通过光照射在非晶硅膜上结晶生产多晶硅膜的方法
公开(公告)号：US06806099B2
公开(公告)日：2004-10-19
申请号：US10059203
申请日：2002-01-31
申请人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
发明人： Kazuo Takeda , Masakazu Saito , Yukio Takasaki , Hironobu Abe , Makoto Ohkura , Yoshinobu Kimura , Takeo Shiba
IPC分类号： G01R3126
CPC分类号： H01L21/02686 , C30B13/00 , C30B29/06 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L29/6675 , H01L29/78672
摘要： The present invention provides a process for producing a polycrystal silicon film which comprises a step of forming a polycrystal silicon film by light irraditation of a silicon film set on a substrate, and a step of selecting substrate samples having an average grain size in a plane of the sample of 500 nm or more. According to the present invention, stable production of a high-performance poly-silicon TFT liquid crystal display becomes possible.
摘要翻译：本发明提供一种多晶硅膜的制造方法，其特征在于，包括通过在基板上设置的硅膜的光照射形成多晶硅膜的步骤，以及选择平均粒径在 500nm以上的样品。根据本发明，可以稳定地生产高性能多晶硅TFT液晶显示器。

9. 发明授权

US06479867B2 Thin film transistor 有权
公开(公告)号：US06479867B2
公开(公告)日：2002-11-12
申请号：US09940538
申请日：2001-08-29
申请人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
发明人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
IPC分类号： H01L2701
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A thin film transistor of high reliability mounted on an insulator substrate, the transistor having a semiconductor thin film, a gate insulation film and a gate electrode in which the concentration profile of impurities in the semiconductor thin film is controlled so as to have a peak in a region other than the center of the depth for the semiconductor thin film to attain a long life for LCD.

10. 发明授权

US06226079B1 Defect assessing apparatus and method, and semiconductor manufacturing method 有权
标题翻译：缺陷评估装置和方法以及半导体制造方法
公开(公告)号：US06226079B1
公开(公告)日：2001-05-01
申请号：US09161393
申请日：1998-09-29
申请人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
发明人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/47
摘要： A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.
摘要翻译：公开了一种用于揭示缺陷的尺寸和深度之间的关系的缺陷评估装置和方法以及半导体制造方法。提供了一种检测光学系统，用于检测由照射光学系统发射的至少两种不同波长的较短波长的一个光线产生的缺陷的散射光的强度，以及来自由较长波长产生的缺陷的散射光一个是相同的提供了一种计算装置，用于根据由检测光学系统检测的来自较短波长的衍射的散射光强度和由较长波长的光导出的值，确定对应于缺陷尺寸的值和对应于缺陷的另一个值深度。提供显示装置，用于根据由计算装置确定的缺陷尺寸和对应于缺陷深度的值，显示出显示缺陷尺寸和缺陷深度之间的关系的分布。

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