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1. 发明授权

US06226079B1 Defect assessing apparatus and method, and semiconductor manufacturing method 有权
标题翻译：缺陷评估装置和方法以及半导体制造方法
公开(公告)号：US06226079B1
公开(公告)日：2001-05-01
申请号：US09161393
申请日：1998-09-29
申请人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
发明人： Kazuo Takeda , Makoto Ohkura , Seiichi Isomae , Kyoko Minowa , Muneo Maeshima , Shigeru Matsui , Yasushi Matsuda , Hirofumi Shimizu
IPC分类号： G01N2100
CPC分类号： G01N21/9501 , G01N21/47
摘要： A defect assessing apparatus and method and a semiconductor manufacturing method for revealing the relationship between the size and depth of defects is disclosed. A detecting optical system is provided for detecting the intensity of scattered light from a defect generated by the shorter wavelength one of the light rays of at least two different wavelengths emitted from irradiating optical systems and that of scattered light from the defect generated by the longer wavelength one of same. A calculating means is provided for determining, from the scattered light intensity derived from the shorter wavelength ray and that derived form the longer wavelength ray, both detected by the detecting optical system, a value corresponding to the defect size and another value corresponding to the defect depth. A display means is provided for displaying a distribution revealing the relationship between defect size and defect depth on the basis of the value corresponding to the defect size and the value corresponding to the defect depth, both determined by the calculating means.
摘要翻译：公开了一种用于揭示缺陷的尺寸和深度之间的关系的缺陷评估装置和方法以及半导体制造方法。提供了一种检测光学系统，用于检测由照射光学系统发射的至少两种不同波长的较短波长的一个光线产生的缺陷的散射光的强度，以及来自由较长波长产生的缺陷的散射光一个是相同的提供了一种计算装置，用于根据由检测光学系统检测的来自较短波长的衍射的散射光强度和由较长波长的光导出的值，确定对应于缺陷尺寸的值和对应于缺陷的另一个值深度。提供显示装置，用于根据由计算装置确定的缺陷尺寸和对应于缺陷深度的值，显示出显示缺陷尺寸和缺陷深度之间的关系的分布。

2. 发明授权

US06191849B1 Wafer inspecting apparatus 有权
标题翻译：晶圆检查仪
公开(公告)号：US06191849B1
公开(公告)日：2001-02-20
申请号：US09219873
申请日：1998-12-24
申请人： Muneo Maeshima , Kazuo Takeda , Shigeru Matsui
发明人： Muneo Maeshima , Kazuo Takeda , Shigeru Matsui
IPC分类号： G01N2147
CPC分类号： G01N21/9501 , G01N21/9505
摘要： Disclosed is a wafer inspecting apparatus suitable to determine whether a scattering substance is a surface foreign matter or an internal defect even if the particle size of the scattering substance is smaller than the wavelength of irradiation rays used for inspection. The wafer is obliquely irradiated with irradiation rays at the Brewster angle, and scattered rays which are scattered from a scattering substance on or in the wafer are detected at and angle 0° and an angle of the Brewster angle or more by detectors. Then, it is determined whether the scattering substance is a surface foreign matter or an internal defect on the basis of a ratio between the intensities of the scattered rays detected by the detectors. The intensity of scattered rays which are scattered from a surface foreign matter and detected at an angle of the Brewster angle or more is larger than the intensity of scattered rays which are scattered from the foreign matter and detected at an angle 0°, and the intensity of scattered rays which are scattered from an internal defect and detected at an angle of the Brewster angle or more is smaller than the intensity of scattered rays which are scattered from the internal defect and detected at an angle 0°. This makes it possible to distinguish the surface foreign matter and the internal defect from each other.
摘要翻译：公开了一种适用于确定散射物质是表面异物还是内部缺陷的晶片检查装置，即使散射物质的粒径小于用于检查的照射射线的波长。以布鲁斯特角度的照射光线倾斜照射晶片，从晶片上或晶片上的散射物质散射的散射光线以0°的角度和布鲁斯特角度以上的角度检测。然后，基于由检测器检测到的散射光线的强度之间的比例来确定散射物质是表面异物还是内部缺陷。从表面异物散射并以布鲁斯特角度以上的角度检测的散射光的强度大于从异物散射并以0°的角度检测的散射光的强度，强度从内部缺陷散射并以布鲁斯特角度以上的角度检测的散射光的散射光小于从内部缺陷散射并以0°的角度检测的散射光的强度。这使得可以将表面异物和内部缺陷彼此区分开。

3. 发明授权

US6157444A Defect inspection apparatus for silicon wafer 有权
标题翻译：硅片缺陷检查装置
公开(公告)号：US6157444A
公开(公告)日：2000-12-05
申请号：US198644
申请日：1998-11-24
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N21/95 , G01N21/88
CPC分类号： G01N21/9505 , G01N21/9501
摘要： In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.
摘要翻译：为了容易地评估影响器件特性的硅晶片的缺陷，本发明提供了一种用于检测存在于样品表面和/或样品内部的缺陷的缺陷检查装置，其包括显示装置基于由检测装置获得的深度信息和位置信息，在具有距离样本的中心位置的距离的坐标轴和存在缺陷的深度的图形上的缺陷的分布。

4. 发明授权

US06256092B1 Defect inspection apparatus for silicon wafer 有权
标题翻译：硅片缺陷检查装置
公开(公告)号：US06256092B1
公开(公告)日：2001-07-03
申请号：US09198093
申请日：1998-11-23
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N2188
CPC分类号： G01N21/9505 , G01N21/9501
摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
摘要翻译：一种缺陷检查装置，用于根据来自通过将光束照射在样品上的样品的光信息，检测存在于半导体样品表面和/或样品内部的缺陷，该检测装置包括检测装置，存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

5. 发明授权

US06683683B2 Defect inspection method and apparatus for silicon wafer 失效
标题翻译：硅片缺陷检查方法及装置
公开(公告)号：US06683683B2
公开(公告)日：2004-01-27
申请号：US10084059
申请日：2002-02-28
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N2188
CPC分类号： G01N21/9505 , G01N21/9501
摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
摘要翻译：提供了一种用于根据从将样本照射光束获得的样本的光信息检测存在于半导体样品表面和/或样品内部的缺陷的缺陷检查装置，其包括检测装置，存在缺陷的深度方向和基于光信息的缺陷分布; 用于设置存在缺陷的深度方向上的位置的设定装置; 以及用于显示由检测装置获得的缺陷的分布的装置，显示装置显示与由设置装置设置的深度方向上的位置相对应的缺陷的分布。

6. 发明授权

US06384909B2 Defect inspection method and apparatus for silicon wafer 有权
公开(公告)号：US06384909B2
公开(公告)日：2002-05-07
申请号：US09842929
申请日：2001-04-27
申请人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
发明人： Koji Tomita , Muneo Maeshima , Shigeru Matsui , Yoshitaka Kodama , Hitoshi Komuro , Kazuo Takeda
IPC分类号： G01N2188
CPC分类号： G01N21/9505 , G01N21/9501
摘要： A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.

7. 发明授权

US6108079A Method for measuring crystal defect and equipment using the same 有权
标题翻译：测量晶体缺陷的方法及使用其的设备
公开(公告)号：US6108079A
公开(公告)日：2000-08-22
申请号：US245195
申请日：1999-02-05
申请人： Muneo Maeshima , Kazuo Takeda , Isao Nemoto , Shigeru Matsui , Yoshitaka Kodama
发明人： Muneo Maeshima , Kazuo Takeda , Isao Nemoto , Shigeru Matsui , Yoshitaka Kodama
IPC分类号： G01N21/88 , G01N21/25 , G01N21/47 , G01N21/95 , G01N21/956 , H01L21/66 , G01N21/00 , G01N21/86
CPC分类号： G01N21/9501 , H01L22/12 , H01L2924/0002
摘要： In order to measure an inner defect of a sample with a certain high accuracy even if the sample surface of the moved up and down by flatness irregularity of the sample and problem on accuracy of the sample movement stage, incident light beams having two wavelength and respective different penetration depths for the sample are slantingly irradiated on the surface of the moving sample 15 from irradiation optical systems 4, 8, and the inner defect of the sample is measured by detecting the scattering light occurred from the interior of the sample with a detection optical system 9 arranged over the sample surface. A distance measurement means 14 is located in an upstream of a movement direction of said sample than said irradiation optical system 4, 8 and said detection optical system 9, thereby a surface height of said sample is measured. When a measured point on sample measured by the distance measurement means 14 is arrived at a lower part of the detection optical system 9, height positions of the irradiation optical system and the detection optical system are controlled by piezo electric elements 11,12,13 so that the irradiation optical system and the detection optical system are located at predetermined positions relating to the measured point.
摘要翻译：为了以一定的高精度测量样品的内部缺陷，即使样品的平坦度不均匀性上下移动的样品表面和样品移动台的精度问题，具有两个波长的入射光束和相应的样品的不同穿透深度从照射光学系统4,8倾斜地照射在移动样品15的表面上，并且通过用检测光学检测从样品内部发生的散射光来测量样品的内部缺陷系统9布置在样品表面上。距离测量装置14位于所述样品的移动方向的上游，比所述照射光学系统4,8和所述检测光学系统9，从而测量所述样品的表面高度。当通过距离测量装置14测量的样品上的测量点到达检测光学系统9的下部时，照射光学系统和检测光学系统的高度位置由压电元件11,12,13所控制照射光学系统和检测光学系统位于与测量点相关的预定位置处。

8. 发明授权

US6160615A Surface measurement apparatus for detecting crystal defects of wafer 有权
标题翻译：用于检测晶片的晶体缺陷的表面测量装置
公开(公告)号：US6160615A
公开(公告)日：2000-12-12
申请号：US255766
申请日：1999-02-23
申请人： Shigeru Matsui , Muneo Maeshima , Isao Nemoto
发明人： Shigeru Matsui , Muneo Maeshima , Isao Nemoto
IPC分类号： H01L21/66 , G01N21/94 , G01N21/95 , G01N21/956 , H01L21/00 , G01N21/00 , C23C16/00 , G01B11/06
CPC分类号： H01L21/67288 , G01N21/94 , G01N21/9501
摘要： A sample is supported flat in high precision by a sample chuck, and is easily mounted and dismounted.A wafer lifting mechanism is arranged in a position separated from a rotating system of a rotatable wafer chuck, and a wafer is lifted from a supporting surface by moving the wafer lifting mechanism upward to let pins penetrate through through holes of the wafer chuck under a state that the wafer chuck is stopped at a sample mounting-and-dismounting position.
摘要翻译：样品通过样品卡盘以高精度平坦地支撑，并且易于安装和拆卸。将晶片升降机构设置在与旋转晶片卡盘的旋转系统分离的位置，通过向上移动晶片升降机构使晶片从支撑面抬起，以使引脚在状态下穿过晶片卡盘的通孔晶片卡盘停在样品安装和拆卸位置。

9. 发明授权

US06936152B2 Capillary array electrophoresis apparatus and method of separating and analyzing specimen 有权
标题翻译：毛细管阵列电泳仪及其分析分析方法
公开(公告)号：US06936152B2
公开(公告)日：2005-08-30
申请号：US09852029
申请日：2001-05-10
申请人： Masaya Kojima , Muneo Maeshima , Yoshiyuki Okishima , Tomohiro Shoji , Wataru Matsuo
发明人： Masaya Kojima , Muneo Maeshima , Yoshiyuki Okishima , Tomohiro Shoji , Wataru Matsuo
IPC分类号： G01N27/447 , C25B13/02 , G01N27/27
CPC分类号： G01N27/44782 , G01N27/44704
摘要： At a wall constituting a space for a thermostatic oven in an electrophoresis apparatus, a capillary array attachment portion is formed which permits attachment of a plurality of capillary arrays having different length. Thereby, a selected capillary array constituted by collecting a plurality of capillaries can be easily attached to the electrophoresis apparatus depending on measurement purpose.
摘要翻译：在构成电泳装置中的恒温箱的空间的壁上形成毛细管阵列附着部，其可以附着多个不同长度的毛细管阵列。由此，根据测定目的，可以容易地将通过收集多个毛细管构成的所选毛细管阵列附着于电泳装置。

10. 发明授权

US10302641B2 Automatic analysis device 有权
公开(公告)号：US10302641B2
公开(公告)日：2019-05-28
申请号：US14766377
申请日：2014-01-23
申请人： Shunichiro Nobuki , Muneo Maeshima , Terumi Tamura , Kenta Imai
发明人： Shunichiro Nobuki , Muneo Maeshima , Terumi Tamura , Kenta Imai
IPC分类号： G01N21/05 , G01N21/69 , G01N21/76 , G01N27/74 , G01N35/00 , G01N33/543 , G01N33/561
摘要： An analyzing device of the present invention is provided with a flow chamber that a fluid including magnetic particles associated with a labeling substance flows from a fluid inlet to a fluid outlet, magnetic trap means to apply a magnetic field for trapping the magnetic particles to the fluid in the flow chamber, a working electrode and a counter electrode to apply a voltage to the magnetic particles trapped by the magnetic trap means, and to emit a luminescence, a light detection element to detect a luminescence derived from the labeling substance on the magnetic particles trapped in the flow chamber, and regulating means to regulate a region that the light detection element detects the luminescence derived from the labeling substance on a part of magnetic particles of them trapped by the magnetic trap means.

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