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1. 发明申请

US20090072135A1 Micro Sample Heating Probe and Method of Producing the Same, and Analyzer Using the Micro Sample Heating Probe 有权
标题翻译：微型样品加热探针及其制备方法，以及使用微型样品加热探针的分析仪
公开(公告)号：US20090072135A1
公开(公告)日：2009-03-19
申请号：US12204896
申请日：2008-09-05
申请人： Kazuhiko Horikoshi , Naotoshi Akamatsu , Toshiaki Otani
发明人： Kazuhiko Horikoshi , Naotoshi Akamatsu , Toshiaki Otani
IPC分类号： H01J49/26 , G01N30/02
CPC分类号： H01J49/16 , H01J49/0459
摘要： An object of the present invention is to extract a micro foreign body of a few μm, which may cause a product defect of a device or the like, and to subject the foreign body to a mass analysis at a favorable S/N ratio without any contamination. A micro sample heating probe includes a sample holder made up of two members different in diameter, a supporting part, and a terminal part. The sample holder includes a heating mechanism only in a limited part, and just a region extremely close to the micro sample being an analysis target is heated locally. Therefore, even when a contaminated substance is attached to the probe, such substance is not heated, thereby preventing a noise from occurring, and enabling an analysis at a quite favorable S/N ratio.
摘要翻译：本发明的目的是提取几个可能引起装置的产品缺陷的少数微小异物，并以不利的S / N比率使异物进行质量分析污染。微型样品加热探针包括由直径不同的两个构件构成的样品保持器，支撑部件和端子部件。样品保持器仅在有限的部分包括加热机构，并且仅局部地加热非常接近作为分析对象的微量样品的区域。因此，即使将被污染物质附着在探针上，也不会使该物质发生加热，从而防止发生噪音，能够以相当良好的S / N比进行分析。

2. 发明授权

US07772568B2 Micro sample heating probe and method of producing the same, and analyzer using the micro sample heating probe 有权
标题翻译：微型样品加热探针及其制作方法，分析仪采用微量样品加热探针
公开(公告)号：US07772568B2
公开(公告)日：2010-08-10
申请号：US12204896
申请日：2008-09-05
申请人： Kazuhiko Horikoshi , Naotoshi Akamatsu , Toshiaki Otani
发明人： Kazuhiko Horikoshi , Naotoshi Akamatsu , Toshiaki Otani
IPC分类号： H01J49/26 , H01J37/20 , G01N30/02
CPC分类号： H01J49/16 , H01J49/0459
摘要： An object of the present invention is to extract a micro foreign body of a few μm, which may cause a product defect of a device or the like, and to subject the foreign body to a mass analysis at a favorable S/N ratio without any contamination. A micro sample heating probe includes a sample holder made up of two members different in diameter, a supporting part, and a terminal part. The sample holder includes a heating mechanism only in a limited part, and just a region extremely close to the micro sample being an analysis target is heated locally. Therefore, even when a contaminated substance is attached to the probe, such substance is not heated, thereby preventing a noise from occurring, and enabling an analysis at a quite favorable S/N ratio.
摘要翻译：本发明的目的是提取几μm的微小异物，这可能导致器件的产品缺陷等，并且以良好的S / N比使异物进行质量分析，而没有任何污染。微型样品加热探针包括由直径不同的两个构件构成的样品保持器，支撑部件和端子部件。样品保持器仅在有限的部分包括加热机构，并且仅局部地加热非常接近作为分析对象的微量样品的区域。因此，即使将被污染物质附着在探针上，也不会使该物质发生加热，从而防止发生噪音，能够以相当良好的S / N比进行分析。

3. 发明申请

US20090261329A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20090261329A1
公开(公告)日：2009-10-22
申请号：US12423865
申请日：2009-04-15
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Yoshiki Yonamoto , Naotoshi Akamatsu , Toshihiko Itoga , Takuo Kaitoh , Takahiro Kamo , Gi-il Kim , Takeshi Sakai , Noboru Ooki
IPC分类号： H01L33/00 , H01L29/786
CPC分类号： H01L29/78609 , H01L29/66765 , H01L29/78669 , H01L31/02161
摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.
摘要翻译：提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

4. 发明授权

US08284364B2 Active matrix display device 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US08284364B2
公开(公告)日：2012-10-09
申请号：US12765105
申请日：2010-04-22
申请人： Ichiro Yamakawa , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
发明人： Ichiro Yamakawa , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
IPC分类号： G02F1/1333
CPC分类号： G02F1/136286 , G02F1/136213 , G02F1/136227
摘要： Provided is a technology for preventing current leak of a charge holding capacitor which constitutes a pixel of a display device so as to prevent deterioration of display image quality of the display device. The display device includes a first contact hole connecting a first wiring layer and a second wiring layer which is formed over the first wiring layer, a second contact hole connecting the second wiring layer and a third wiring layer which is formed over the second wiring layer, and an electrode layer formed between the plurality of insulating films disposed between the second wiring layer and the third wiring layer, wherein at a position in a substrate surface direction, a distance between a electrode layer and the second contact hole is larger than a distance between the electrode layer and the first contact hole.
摘要翻译：提供了一种用于防止构成显示装置的像素的电荷保持电容器的电流泄漏的技术，以防止显示装置的显示图像质量的劣化。该显示装置包括连接第一布线层和形成在第一布线层上的第二布线层的第一接触孔，连接第二布线层的第二接触孔和形成在第二布线层上的第三布线层，以及形成在所述第二布线层和所述第三布线层之间的所述多个绝缘膜之间的电极层，其中，在基板表面方向的位置处，电极层与所述第二接触孔之间的距离大于电极层和第一接触孔。

5. 发明申请

US20100271582A1 ACTIVE MATRIX DISPLAY DEVICE 有权
标题翻译：主动矩阵显示设备
公开(公告)号：US20100271582A1
公开(公告)日：2010-10-28
申请号：US12765105
申请日：2010-04-22
申请人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
发明人： Ichiro YAMAKAWA , Kazuhiko Horikoshi , Naotoshi Akamatsu , Jun Gotoh , Hiroaki Asuma
IPC分类号： G02F1/1333
CPC分类号： G02F1/136286 , G02F1/136213 , G02F1/136227
摘要： Provided is a technology for preventing current leak of a charge holding capacitor which constitutes a pixel of a display device so as to prevent deterioration of display image quality of the display device. The display device includes a first contact hole connecting a first wiring layer and a second wiring layer which is formed over the first wiring layer, a second contact hole connecting the second wiring layer and a third wiring layer which is formed over the second wiring layer, and an electrode layer formed between the plurality of insulating films disposed between the second wiring layer and the third wiring layer, wherein at a position in a substrate surface direction, a distance between a electrode layer and the second contact hole is larger than a distance between the electrode layer and the first contact hole.
摘要翻译：提供了一种用于防止构成显示装置的像素的电荷保持电容器的电流泄漏的技术，以防止显示装置的显示图像质量的劣化。该显示装置包括连接第一布线层和形成在第一布线层上的第二布线层的第一接触孔，连接第二布线层的第二接触孔和形成在第二布线层上的第三布线层，以及形成在所述第二布线层和所述第三布线层之间的所述多个绝缘膜之间的电极层，其中，在基板表面方向的位置处，电极层与所述第二接触孔之间的距离大于电极层和第一接触孔。

6. 发明授权

US08742332B2 Mass spectrometer and mass spectrometry method 失效
标题翻译：质谱仪和质谱法
公开(公告)号：US08742332B2
公开(公告)日：2014-06-03
申请号：US12952453
申请日：2010-11-23
申请人： Kazuhiko Horikoshi , Naotoshi Akamatsu
发明人： Kazuhiko Horikoshi , Naotoshi Akamatsu
IPC分类号： H01J49/00
CPC分类号： H01J49/16
摘要： A mass spectrometer and a mass spectrometry method adapted for mass spectrometry of a hardly volatile minuscule organic foreign matter of several μm often causing a device defect are disclosed. A sample gasified by a sample heating probe is introduced into an ion source, and the sample thus ionized is detected by being separated in accordance with the mass-to-charge ratio. In this mass spectrometry technique, the sample heating probe is covered with a cylindrical gas guide mechanism, and the gasified sample is led efficiently to the ion source by the gas guide mechanism, thereby making possible the contribution by the sample components which otherwise might be dispersed and wasted in the prior art. As a result, the mass spectrometry with higher sensitivity and S/N than in the prior art is realized.
摘要翻译：公开了一种质谱仪和质谱法，其适用于容易造成器件缺陷的几微米的几乎不易挥发的微小有机杂质的质谱。将由样品加热探针气化的样品引入离子源中，通过根据质荷比分离来检测如此离子化的样品。在该质谱技术中，样品加热探针被圆柱形气体引导机构覆盖，气化样品通过气体引导机构有效地被引导到离子源，从而使可能被分散的样品成分的贡献成为可能并浪费在现有技术中。结果，实现了比现有技术更高的灵敏度和S / N的质谱。

7. 发明授权

US08011694B2 Steering member unit 有权
标题翻译：转向构件单元
公开(公告)号：US08011694B2
公开(公告)日：2011-09-06
申请号：US12379474
申请日：2009-02-23
申请人： Hitoshi Suzuki , Fumihiro Okazaki , Takeshi Anzai , Kazuhiko Horikoshi
发明人： Hitoshi Suzuki , Fumihiro Okazaki , Takeshi Anzai , Kazuhiko Horikoshi
IPC分类号： B62D1/16
CPC分类号： B62D25/145
摘要： A steering member unit includes a metal steering member body disposed to extend substantially in a vehicle width direction; metal side brackets that are fixed respectively to both ends of the steering member body and are attachable respectively to vehicle body side parts; and a metal stay that is fixed to an intermediate part of the steering member body and is attachable to a vehicle body floor. In an intermediate part of the steering member body, multiple ground current connecting members connectable to a vehicle body metal part are provided at intervals in a longitudinal direction (vehicle width direction) of the steering member body. Thereby, a resonance frequency of a wavelength depending on the distance of a magnetic field generated by a current flowing into the steering member body can be changed and adjusted.
摘要翻译：转向构件单元包括金属转向构件体，其设置成基本上在车辆宽度方向上延伸; 金属侧支架分别固定在转向构件主体的两端，并分别固定在车体侧部上; 以及固定在转向构件主体的中间部分并且可附接到车体地板的金属支架。在转向构件体的中间部分，在转向构件主体的纵向（车辆宽度方向）上间隔设置有可连接到车体金属部的多个地电流连接构件。由此，可以改变和调整由流过转向构件主体的电流产生的磁场的距离的波长的共振频率。

8. 发明授权

US06623986B2 Method of manufacturing a ferroelectric memory device 失效
标题翻译：铁电存储器件的制造方法
公开(公告)号：US06623986B2
公开(公告)日：2003-09-23
申请号：US09984465
申请日：2001-10-30
申请人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
发明人： Kiyoshi Ogata , Kazuhiko Horikoshi , Kazufumi Suenaga , Hisayuki Kato , Keiichi Yoshizumi , Masahito Yamazaki
IPC分类号： H01L2100
CPC分类号： H01L28/57 , H01L27/1203
摘要： Along life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7/electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of ferroelectric characteristic to attain a long life ferroelectric memory device.
摘要翻译：通过在铁氧体层7 /电极6的边界上的上保护电极和上电极8以及降解防止层上设置多个防结层，可以获得使用薄铁电体膜电容器作为记忆电容器的寿命铁电存储器件或者提供在铁电层7 /上电极8的边界处减少改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且具有较低的铁电特性降低以达到长寿命铁电存储器件。

9. 发明授权

US06903371B2 Thin film transistor and display using the same 有权
标题翻译：薄膜晶体管和显示器使用相同
公开(公告)号：US06903371B2
公开(公告)日：2005-06-07
申请号：US10773950
申请日：2004-02-06
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

10. 发明授权

US06657227B2 Transistor with thin film active region having clusters of different crystal orientation 有权
标题翻译：具有薄膜有源区的晶体管具有不同晶体取向的簇
公开(公告)号：US06657227B2
公开(公告)日：2003-12-02
申请号：US09910314
申请日：2001-07-19
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

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