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1. 发明申请

US20090061575A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090061575A1
公开(公告)日：2009-03-05
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/84
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

2. 发明申请

US20080073654A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20080073654A1
公开(公告)日：2008-03-27
申请号：US11898997
申请日：2007-09-18
申请人： Hidekazu Miyake , Toshihiko Itoga , Eiji OUE , Takeshi Noda
发明人： Hidekazu Miyake , Toshihiko Itoga , Eiji OUE , Takeshi Noda
IPC分类号： H01L27/15 , H01L21/00
CPC分类号： H01L21/268 , H01L21/02532 , H01L21/02675 , H01L27/1222 , H01L27/1229 , H01L27/1233 , H01L27/1237 , H01L27/1251 , H01L27/1285 , H01L29/04 , H01L29/0657 , H01L29/42384 , H01L29/66757 , H01L29/66765 , H01L29/78675 , H01L29/78678
摘要： Improvement in characteristics of a SELAX-TFT and throughput of ELA crystallization is achieved. When a thin film transistor using pseudo single crystal semiconductor and a thin film transistor using particulate polysilicon semiconductor are formed on a single substrate, the film thickness of an amorphous semiconductor film before crystallization in the pseudo single crystal semiconductor portion is greater than that in the polysilicon semiconductor portion.
摘要翻译：实现了SELAX-TFT的特性的改善和ELA结晶的生产率。当使用微单晶半导体的薄膜晶体管和使用颗粒状多晶硅半导体的薄膜晶体管形成在单个基板上时，在伪单晶半导体部分中结晶之前的非晶半导体膜的膜厚度大于多晶硅半导体部分。

3. 发明授权

US06815717B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06815717B2
公开(公告)日：2004-11-09
申请号：US09988585
申请日：2001-11-20
申请人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
发明人： Kazuhiko Horikoshi , Kiyoshi Ogata , Miwako Nakahara , Takuo Tamura , Yasushi Nakano , Ryoji Oritsuki , Toshihiko Itoga , Takahiro Kamo
IPC分类号： H01L2904
CPC分类号： H01L29/4908 , H01L29/66757
摘要： To a polycrystalline silicon layer crystallized by irradiation with laser light, a mixed gas comprised of ozone gas and H2O or N2O gas is fed at a processing temperature of 500° C. or below, or the polycrystalline silicon layer is previously treated with a solution such as ozone water or an aqueous NH3/hydrogen peroxide solution, followed by oxidation treatment with ozone, to form a silicon oxide layer with a thickness of 4 nm or more at the surface of the polycrystalline silicon layer for forming a thin-film transistor having characteristics that are less varying on a glass substrate previously not annealed.

4. 发明授权

US06479867B2 Thin film transistor 有权
公开(公告)号：US06479867B2
公开(公告)日：2002-11-12
申请号：US09940538
申请日：2001-08-29
申请人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
发明人： Toshihiko Itoga , Takeo Shiba , Makoto Ohkura , Toshiki Kaneko
IPC分类号： H01L2701
CPC分类号： H01L29/66757 , H01L29/78621
摘要： A thin film transistor of high reliability mounted on an insulator substrate, the transistor having a semiconductor thin film, a gate insulation film and a gate electrode in which the concentration profile of impurities in the semiconductor thin film is controlled so as to have a peak in a region other than the center of the depth for the semiconductor thin film to attain a long life for LCD.

5. 发明授权

US07727784B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07727784B2
公开(公告)日：2010-06-01
申请号：US12285997
申请日：2008-10-17
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L21/00
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

6. 发明授权

US07557376B2 Display device using first and second semiconductor films of different crystallinity and boundary section therebetween 有权
标题翻译：显示装置使用具有不同结晶度的第一和第二半导体膜以及它们之间的边界部分
公开(公告)号：US07557376B2
公开(公告)日：2009-07-07
申请号：US11526011
申请日：2006-09-25
申请人： Masahiro Maki , Hideo Sato , Takayuki Nakao , Toshihiko Itoga
发明人： Masahiro Maki , Hideo Sato , Takayuki Nakao , Toshihiko Itoga
IPC分类号： H01L31/036
CPC分类号： H01L29/04 , H01L27/1285 , H01L27/13 , H01L29/78645
摘要： The present invention provides an active matrix display device capable of raising its integration density by reducing the drive circuit area on the active matrix substrate. A semiconductor film presents in the boundary between a quasi-strip crystalline semiconductor film and another semiconductor film is used to form conductive lines, resistors, source/drain electrodes and the like which are respectively connected to thin film transistors formed using the quasi-strip crystalline semiconductor film.
摘要翻译：本发明提供一种能够通过减少有源矩阵基板上的驱动电路面积而提高其集成密度的有源矩阵显示装置。在准带状晶体半导体膜和另一半导体膜之间的边界中存在的半导体膜用于形成分别连接到使用准带状晶体形成的薄膜晶体管的导线，电阻器，源极/漏极等半导体膜。

7. 发明授权

US07535024B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07535024B2
公开(公告)日：2009-05-19
申请号：US11600164
申请日：2006-11-16
申请人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L29/04
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.
摘要翻译：本发明提供了一种旨在减少制造工时的显示装置的制造方法。在具有薄膜晶体管的显示装置的制造方法中，其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极第一栅电极的尺寸，半导体层包括与第二栅电极重叠的沟道区，与第一栅电极重叠并形成在第二栅电极外的第一杂质区，第二杂质区，形成在栅极电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域，第一杂质区域，第二杂质区域和第三杂质区域分别由相同的导电类型形成，杂质第一杂质区域的浓度低于第三杂质区域的杂质浓度第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度，将杂质共同地注入到第一和第二杂质区域中，使得杂质通过第一栅电极注入第一杂质区域并且将杂质注入到第二杂质区域中，使得深度方向上的杂质浓度的峰值位置位于半导体层的下方，从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。

8. 发明授权

US07456433B2 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07456433B2
公开(公告)日：2008-11-25
申请号：US11590882
申请日：2006-11-01
申请人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
发明人： Takuo Kaitoh , Takahiro Kamo , Toshihiko Itoga
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L27/1285 , G02F1/13454
摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.
摘要翻译：本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜并且将植入物施加到前体膜。这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

9. 发明申请

US20070117292A1 Display device and fabrication method thereof 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20070117292A1
公开(公告)日：2007-05-24
申请号：US11593552
申请日：2006-11-07
申请人： Yasukazu Kimura , Toshihiko Itoga , Takeshi Noda
发明人： Yasukazu Kimura , Toshihiko Itoga , Takeshi Noda
IPC分类号： H01L21/84 , H01L27/148
CPC分类号： H01L27/1281 , H01L27/1285 , H01L27/1296
摘要： The present invention provides a display-device-use substrate which is strip-crystallized while minimizing the generation of peeling of a semiconductor by suppressing the generation of aggregation at the time of crystallization due to the radiation of continuous oscillation laser beams. A silicon nitride film and a silicon oxide film which constitutes a background film are formed on a glass substrate on which projecting portions are formed, and a silicon base film is formed on the silicon nitride film and a silicon oxide film. Banks which intersect the scanning directions of laser beams are positioned below the silicon base substrate. The aggregation which is generated by the scanning of laser beams is stopped at a portion after the laser beams gets over the bank and, thereafter, the strip crystal silicon film is formed normally.
摘要翻译：本发明提供一种显示装置用基板，其通过抑制由连续振荡激光束的辐射引起的结晶时的聚集的产生而使半导体的剥离最小化而进行带状结晶化。在形成有突出部的玻璃基板上形成氮化硅膜和构成背景膜的氧化硅膜，在氮化硅膜和氧化硅膜上形成硅基膜。与激光束的扫描方向相交的堤位于硅基底的下方。通过激光扫描产生的聚集在激光束越过堤岸之后的一部分停止，此后，正常形成条状晶体硅膜。

10. 发明申请

US20070108449A1 Display device and fabrication method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20070108449A1
公开(公告)日：2007-05-17
申请号：US11600164
申请日：2006-11-16
申请人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
发明人： Eiji Oue , Toshihiko Itoga , Toshiki Kaneko , Daisuke Sonoda , Takeshi Kuriyagawa
IPC分类号： H01L29/04 , H01L21/84
CPC分类号： H01L29/78621 , H01L29/42384 , H01L29/4908 , H01L29/78696 , H01L2029/7863
摘要： The present invention provides a fabrication method of a display device which aims at the reduction of fabricating man-hours. In a fabrication method of a display device having a thin film transistor in which a gate electrode includes a first gate electrode and a second gate electrode which is overlapped to the first gate electrode and has a size thereof in the channel direction set smaller than the corresponding size of the first gate electrode, the semiconductor layer includes a channel region which is overlapped to the second gate electrode, a first impurity region which is overlapped to the first gate electrode and is formed outside the second gate electrode, a second impurity region which is formed outside the gate electrode, and a third conductive impurity region which is formed outside the gate electrode and the second impurity region, the first impurity region, the second impurity region and the third impurity region are respectively formed of the same conductive type, the impurity concentration of the first impurity region is lower than the impurity concentration of the third impurity region, and the impurity concentration of the second impurity region is lower than the impurity concentration of the first impurity region, impurities are collectively implanted into both of the first and second impurity regions such that the impurities are implanted into the first impurity region by way of the first gate electrode and the impurities are implanted into the second impurity region such that a peak position of the impurity concentration in the depth direction is positioned below the semiconductor layer thus lowering the impurity concentration of the second impurity region than the impurity concentration of the first impurity region.
摘要翻译：本发明提供了一种旨在减少制造工时的显示装置的制造方法。在具有薄膜晶体管的显示装置的制造方法中，其中栅电极包括第一栅极和与第一栅电极重叠并且具有小于相应的沟道方向的尺寸的第二栅电极第一栅电极的尺寸，半导体层包括与第二栅电极重叠的沟道区，与第一栅电极重叠并形成在第二栅电极外的第一杂质区，第二杂质区，形成在栅电极外部的第三导电杂质区域和形成在栅电极和第二杂质区域外的第三导电杂质区域，第一杂质区域，第二杂质区域和第三杂质区域分别由相同的导电型形成，杂质第一杂质区域的浓度低于第三杂质区域的杂质浓度第二杂质区域的杂质浓度低于第一杂质区域的杂质浓度，将杂质共同地注入到第一和第二杂质区域中，使得杂质通过第一栅电极注入第一杂质区域并且将杂质注入到第二杂质区域中，使得深度方向上的杂质浓度的峰值位置位于半导体层的下方，从而降低第二杂质区域的杂质浓度比第一杂质区域的杂质浓度降低。

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