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1. 发明申请

US20070029924A1 Image display device 审中-公开
标题翻译：图像显示装置
公开(公告)号：US20070029924A1
公开(公告)日：2007-02-08
申请号：US11498136
申请日：2006-08-03
申请人： Nobuyuki Ushifusa , Nobuhiko Fukuoka , Shigeru Matsuyama , Hiroshi Kawasaki , Chikae Kubo , Akira Ishii , Hiroshi Kikuchi , Takuo Tamura , Yasushi Sano
发明人： Nobuyuki Ushifusa , Nobuhiko Fukuoka , Shigeru Matsuyama , Hiroshi Kawasaki , Chikae Kubo , Akira Ishii , Hiroshi Kikuchi , Takuo Tamura , Yasushi Sano
IPC分类号： H01J63/04 , H01J1/62
CPC分类号： H01J31/127 , H01J29/04 , H01J29/481
摘要： An image display device according to the present invention comprises a back panel on which a plurality of pixels each having a thin film electron emitter are arranged two-dimensionally, a front panel disposed opposite the back panel on which phosphor layer is formed, and a sealing frame with which the back panel and the front panel are fixed mutually to seal the plurality of pixels and the phosphor layer in a space enclosed by the back panel, the front panel, and the sealing frame, and is characterized in that double-layered signal lines each electrically connected to a group of the plurality of pixels are formed on the back panel, each of the double-layered signal lines consists of a lower-level electrode made from a silver paste and an upper-level electrode covering at least a part of the lower-level electrode laminated in this order on the back panel. The lower-level electrode is shaped e.g. by coating a groove formed in a surface of the back panel with the silver paste, and a surface of the upper-level electrode is used e.g. for an electrode of the thin film electron emitter, also. According to the configuration, the present invention reduces wiring resistance of the signal lines each electrically connected to the thin film electron emitters as well as improves planarity of each tunneling junction of the thin film electron emitters to suppress dispersion of electron emission property thereof among the pixels.
摘要翻译：根据本发明的图像显示装置包括：背面板，每个具有薄膜电子发射器的多个像素二维布置;前面板，与设置有荧光体层的后面板相对设置;以及密封后面板和前面板相互固定的框架，用于将多个像素和荧光体层密封在由后面板，前面板和密封框所包围的空间中，其特征在于双层信号在后面板上形成有与多个像素的一组电连接的线，每个双层信号线由由银膏制成的下层电极和覆盖至少一部分的上层电极组成，的下层电极按顺序层压在后面板上。下层电极的形状如通过用银膏涂覆形成在后面板的表面中的凹槽，并且使用上层电极的表面。对于薄膜电子发射体的电极也是如此。根据该结构，本发明降低了与薄膜电子发射体电连接的信号线的布线电阻，并且提高了薄膜电子发射体的每个隧道结的平坦度，以抑制像素间的电子发射特性的分散。

2. 发明授权

US06903371B2 Thin film transistor and display using the same 有权
标题翻译：薄膜晶体管和显示器使用相同
公开(公告)号：US06903371B2
公开(公告)日：2005-06-07
申请号：US10773950
申请日：2004-02-06
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

3. 发明授权

US06657227B2 Transistor with thin film active region having clusters of different crystal orientation 有权
标题翻译：具有薄膜有源区的晶体管具有不同晶体取向的簇
公开(公告)号：US06657227B2
公开(公告)日：2003-12-02
申请号：US09910314
申请日：2001-07-19
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

4. 发明授权

US06570184B2 Thin film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US06570184B2
公开(公告)日：2003-05-27
申请号：US10050154
申请日：2002-01-18
申请人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
发明人： Kazuhiko Horikoshi , Klyoshi Ogata , Takuo Tamura , Miwako Nakahara , Makoto Ohkura , Ryoji Oritsuki , Yasushi Nakano , Takeo Shiba
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , H01L29/4908 , H01L29/78603
摘要： Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
摘要翻译：使用廉价的未退火玻璃作为基材。掺杂有硼（B）或磷（P）的多晶硅膜的表面在臭氧处于500℃以下的处理温度下被氧化，在多晶的表面上形成厚度为4〜20nm的氧化硅膜硅。由于这种处理，可以使栅绝缘层和沟道层之间的界面处的电平密度更低，并且可以在非退火玻璃基板上形成具有较小特性变化的薄膜晶体管。

5. 发明申请

US20130108509A1 AUTOMATIC ANALYSIS DEVICE 审中-公开
标题翻译：自动分析装置
公开(公告)号：US20130108509A1
公开(公告)日：2013-05-02
申请号：US13805594
申请日：2011-06-13
申请人： Masaki Shiba , Takuo Tamura , Sakuichiro Adachi
发明人： Masaki Shiba , Takuo Tamura , Sakuichiro Adachi
IPC分类号： G01N21/47
CPC分类号： G01N21/47 , G01N21/51 , G01N35/025 , G01N2021/4711 , G01N2021/825
摘要： Disclosed is an automatic analysis device including light detectors that detect scattered light, whereby highly reliable analysis results can be obtained by reduction of the effect of noise components. Highly reliable concentration analysis with little effect from noise components can be achieved by calculating the correlation between scattered light detected by a plurality of light detectors before calculating concentration, and by performing concentration analysis using scattered light with high correlation.
摘要翻译：公开了一种包括检测散射光的光检测器的自动分析装置，通过降低噪声成分的影响，可以获得高可靠性的分析结果。通过在计算浓度之前计算由多个光检测器检测到的散射光之间的相关性，并且通过使用具有高相关性的散射光进行浓度分析，可以实现对噪声成分影响很小的高度可靠的浓度分析。

6. 发明授权

US07750548B2 Image display device 失效
标题翻译：图像显示装置
公开(公告)号：US07750548B2
公开(公告)日：2010-07-06
申请号：US11943690
申请日：2007-11-21
申请人： Takuo Tamura , Masakazu Sagawa , Hiroshi Kikuchi
发明人： Takuo Tamura , Masakazu Sagawa , Hiroshi Kikuchi
IPC分类号： H01J1/62
CPC分类号： H01J31/127 , H01J29/04 , H01J2329/0484
摘要： An image display device in which each pixel has a thin-film electron source composed of a lower electrode (which is a signal wire), an electron accelerating layer (which is formed by anodizing the surface of said signal wire), and an upper electrode (which covers said electron accelerating layer and releases electrons), in which the anodized film constituting said electron accelerating layer contains hydrated alumina component and anhydrous alumina component such that their ratio in the side close to the upper electrode is greater than that in the side close to the lower electrode. This structure prevents said thin-film electron source from being deteriorated in diode characteristics by said electron accelerating layer, thereby enhancing the reliability of said image display device.
摘要翻译：一种图像显示装置，其中每个像素具有由下电极（其是信号线），电子加速层（通过阳极氧化所述信号线的表面形成）构成的薄膜电子源，以及上电极（其覆盖所述电子加速层并释放电子），其中构成所述电子加速层的阳极氧化膜含有水合氧化铝组分和无水氧化铝组分，使得它们在靠近上电极的一侧的比例大于侧面密封到下电极。该结构防止所述电子加速层使所述薄膜电子源的二极管特性劣化，从而提高所述图像显示装置的可靠性。

7. 发明授权

US07232716B2 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US07232716B2
公开(公告)日：2007-06-19
申请号：US10891522
申请日：2004-07-15
申请人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
发明人： Hironaru Yamaguchi , Kiyoshi Ogata , Takuo Tamura , Jun Gotoh , Masakazu Saito , Kazuo Takeda
IPC分类号： H01L21/66 , H01L21/268
CPC分类号： H01L21/02686 , G02F1/13454 , H01L21/02595 , H01L21/2026 , H01L27/1285 , H01L29/04 , H01L29/66757 , H01L29/78675
摘要： The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.
摘要翻译：测量在基板上形成的非晶硅膜的平均膜厚。然后，用激光束照射非晶硅膜以形成多晶硅膜，并测量多晶硅膜的晶粒尺寸分布。基于在多晶硅膜的两点A和B测量的晶粒尺寸值来计算激光束照射的能量密度的最佳值。然后，测量形成在随后的基板上的非晶硅膜的平均膜厚。基于两个平均膜厚度计算随后的非晶硅膜的激光束照射的能量密度值。因此，在大尺寸基板的整个表面上形成均匀的大晶粒尺寸的多晶硅膜，以提供大面积的多晶硅TFT。

8. 发明授权

US07062081B2 Method and system for analyzing circuit pattern defects 失效
标题翻译：分析电路图形缺陷的方法和系统
公开(公告)号：US07062081B2
公开(公告)日：2006-06-13
申请号：US09783604
申请日：2001-02-15
申请人： Atsushi Shimoda , Ichirou Ishimaru , Yuji Takagi , Takuo Tamura , Yuichi Hamamura , Kenji Watanabe , Yasuhiko Ozawa , Seiji Isogai
发明人： Atsushi Shimoda , Ichirou Ishimaru , Yuji Takagi , Takuo Tamura , Yuichi Hamamura , Kenji Watanabe , Yasuhiko Ozawa , Seiji Isogai
IPC分类号： G06K9/00
CPC分类号： G06T7/0004 , G06T2207/30148 , H01L22/20
摘要： In order to allow critical flaws in an inspected item to be determined early during a production process, the present invention includes the following steps: a step of detecting defects in a production process for the inspected item and storing defect positions; a step of collecting detailed defect information and storing the detailed information in association with defect positions; a step of storing positions at which flaws were generated based on a final inspection of the inspected item; a step of comparing defect positions with positions at which flaws were generated; and a step of classifying and displaying detailed information based on the comparison results.
摘要翻译：为了在生产过程中早期确定检查项目中的关键缺陷，本发明包括以下步骤：检测检查项目的生产过程中的缺陷并存储缺陷位置的步骤; 收集详细缺陷信息并存储与缺陷位置相关联的详细信息的步骤; 基于检查项目的最终检查来存储产生缺陷的位置的步骤; 将缺陷位置与产生缺陷的位置进行比较的步骤; 并根据比较结果对详细信息进行分类和显示。

9. 发明申请

US20050202612A1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20050202612A1
公开(公告)日：2005-09-15
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

10. 发明申请

US20130132022A1 AUTOMATIC ANALYZER AND AUTOMATIC ANALYSIS METHOD 审中-公开
标题翻译：自动分析仪和自动分析方法
公开(公告)号：US20130132022A1
公开(公告)日：2013-05-23
申请号：US13702196
申请日：2011-06-15
申请人： Takuo Tamura , Masaki Shiba , Sakuichiro Adachi
发明人： Takuo Tamura , Masaki Shiba , Sakuichiro Adachi
IPC分类号： G01N21/51 , G06F17/00
摘要： An automatic analyzer is capable of reducing the influence of scattered light having noise components to enhance the S/N ratio properties of a light reception signal. Data is obtained at a plurality of angles by a plurality of detectors and a signal obtained by one detector selected from among the detectors is selected as a reference signal. An approximation is applied by an approximation selection unit, and an approximation calculation unit calculates an approximation using the selected approximation. A degree of variability of the reference signal is determined and a data correction unit corrects the signal of the detector by dividing the signal of the detector by the degree of variability of the reference signal. A concentration calculation processing unit performs the concentration calculation by use of the corrected signal data, and a result output unit outputs the results on a display.
摘要翻译：自动分析仪能够减少具有噪声分量的散射光的影响，以提高光接收信号的S / N比特性。通过多个检测器以多个角度获得数据，并且选择从检测器中选出的一个检测器获得的信号作为参考信号。近似值由近似选择单元施加，近似计算单元使用所选择的近似来计算近似值。确定参考信号的可变性程度，并且数据校正单元通过将检测器的信号除以参考信号的变化程度来校正检测器的信号。浓度计算处理单元通过使用校正的信号数据进行浓度计算，结果输出单元将显示结果输出。

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