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1. 发明授权

US06903371B2 Thin film transistor and display using the same 有权
标题翻译：薄膜晶体管和显示器使用相同
公开(公告)号：US06903371B2
公开(公告)日：2005-06-07
申请号：US10773950
申请日：2004-02-06
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

2. 发明授权

US06657227B2 Transistor with thin film active region having clusters of different crystal orientation 有权
标题翻译：具有薄膜有源区的晶体管具有不同晶体取向的簇
公开(公告)号：US06657227B2
公开(公告)日：2003-12-02
申请号：US09910314
申请日：2001-07-19
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

3. 发明授权

US07227186B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07227186B2
公开(公告)日：2007-06-05
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

4. 发明申请

US20050215077A1 Method for manufacturing a polycrystalline semiconductor film, apparatus thereof, and image display panel 审中-公开
标题翻译：多晶半导体膜的制造方法及其装置以及图像显示面板
公开(公告)号：US20050215077A1
公开(公告)日：2005-09-29
申请号：US11028864
申请日：2005-01-05
申请人： Kazuo Takeda , Takeshi Sato , Jun Gotoh , Masakazu Saitou , Daisuke Mutou
发明人： Kazuo Takeda , Takeshi Sato , Jun Gotoh , Masakazu Saitou , Daisuke Mutou
IPC分类号： G02F1/1368 , G02F1/133 , G09F9/30 , G09G3/36 , G09G3/38 , H01L21/00 , H01L21/20 , H01L21/26 , H01L21/263 , H01L21/268 , H01L21/336 , H01L21/42 , H01L21/77 , H01L27/32 , H01L29/786
CPC分类号： H01L27/1285 , H01L27/1296 , H01L27/3244 , H01L29/66757 , H01L29/78675
摘要： The generation of a projecting intensity distribution in an irradiation laser beam used for forming a polycrystalline semiconductor film is prevented by irradiating the laser beam onto an amorphous semiconductor film to crystallize it while it is being scanned. A dog-ear removing filter for eliminating diffracted light that occurs at boundaries of lenses and acts as a cause of development of dog-ears in the light intensity distribution is disposed in an optical system to cause the light intensity distribution in the irradiation laser beam to be uniform. As a result, by removing the dog ear distributions, the necessity for making the light intensity distribution of the laser beam blur is eliminated, and, consequently, a distribution of high energy efficiency can be maintained and the throughput is improved.
摘要翻译：用于形成多晶半导体膜的照射激光束中的突出强度分布的产生通过将激光束照射到非晶半导体膜上而在被扫描时使其结晶化而被防止。用于消除在透镜边界处发生的衍射光并且作为光强度分布中的狗耳发展的原因的狗耳去除滤光器被设置在光学系统中，以使照射激光束中的光强度分布统一结果，通过去除狗耳分布，消除了激光束模糊的光强度分布的必要性，从而可以保持高能量效率的分布并提高吞吐量。

5. 发明授权

US06716688B2 Irradiation of manufacturing a thin film transistor by laser irradiation 有权
标题翻译：通过激光照射制造薄膜晶体管的照射
公开(公告)号：US06716688B2
公开(公告)日：2004-04-06
申请号：US10299218
申请日：2002-11-18
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

6. 发明授权

US06670638B2 Liquid crystal display element and method of manufacturing the same 有权
标题翻译：液晶显示元件及其制造方法
公开(公告)号：US06670638B2
公开(公告)日：2003-12-30
申请号：US09793972
申请日：2001-02-28
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Hironaru Yamaguchi , Yoshinobu Kimura , Makoto Ohkura , Hironobu Abe , Shigeo Shimomura , Masakazu Saitou , Michiko Takahashi
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Hironaru Yamaguchi , Yoshinobu Kimura , Makoto Ohkura , Hironobu Abe , Shigeo Shimomura , Masakazu Saitou , Michiko Takahashi
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L29/78675
摘要： Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.
摘要翻译：公开了适用于液晶显示器的多晶硅膜及其制造方法。在制造膜时，通过氢氟酸溶液将形成在非晶硅膜表面上的天然氧化物层完全除去，随后在H 2 O 2溶液中浸渍以形成极薄的氧化物层，然后在结晶处理之前进行激光束照射。结晶处理形成由晶粒形成的多晶硅膜，在（111）面上沿着平行于基板表面的方向优先取向，平均晶粒尺寸不大于300nm，晶粒尺寸的标准偏差不大超过平均粒径的30％，粗糙度的标准偏差不大于平均粒径的10％。

7. 发明申请

US20050202612A1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20050202612A1
公开(公告)日：2005-09-15
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

8. 发明申请

US20140048227A1 VEHICLE AIR CONDITIONING DEVICE 审中-公开
标题翻译：车用空调装置
公开(公告)号：US20140048227A1
公开(公告)日：2014-02-20
申请号：US13879337
申请日：2011-10-03
申请人： Masakazu Saitou
发明人： Masakazu Saitou
IPC分类号： B60H1/00
CPC分类号： B60H1/00028 , B60H1/0005 , B60H2001/00085 , B60H2001/00092
摘要： A vehicle air conditioning device comprises first and second outside air ventilation flues that are formed so that outside air flows through opposing ends of an evaporator. An inside air ventilation flue is formed so that inside air flows through a central site in the evaporator such that, at any degree of opening of a first damper, outside air from each of the outside air ventilation flues and inside air from the inside air ventilation flue can flow to an outlet-side ventilation flue or a heater-side ventilation flue at a flow rate that corresponds to the degree of opening of the first damper. Accordingly, even in a configuration in which outside air and inside air flow to the evaporator, it is not necessary to provide the first damper that opens/closes a downstream side of the evaporator for each of the outside air and inside air flow sections.
摘要翻译：车辆空调装置包括形成为使外部空气流过蒸发器的相对端的第一和第二外部空气通风口。形成内部空气通风烟道，使得内部空气流过蒸发器的中心位置，使得在任何程度的第一阻尼器的开口处，来自每个外部空气通风口的内部空气和来自内部空气通风的内部空气烟道可以以对应于第一阻尼器的开度的流量流到出口侧通风道或加热器侧通风道。因此，即使在外部空气和内部空气流向蒸发器的结构中，也不需要为每个外部空气和内部空气流动部分设置用于打开/关闭蒸发器的下游侧的第一阻尼器。

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