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    • 8. 发明授权
    • Method of fabricating light emitting device and thus-fabricated light emitting device
    • 制造发光器件和由此制造的发光器件的方法
    • US07663151B2
    • 2010-02-16
    • US11587632
    • 2005-04-13
    • Hitoshi IkedaKingo SuzukiAkio Nakamura
    • Hitoshi IkedaKingo SuzukiAkio Nakamura
    • H01L33/00
    • H01L33/22H01L33/0079H01L33/0095H01L33/30
    • A light emitting device chip is obtained by dicing a light emitting device wafer having a light emitting layer section 24 based on a double heterostructure in which a first-conductivity-type cladding layer 6, an active layer 5 and an second-conductivity-type cladding layer 4, each of which being composed of a compound semiconductor having a composition allowing lattice matching with GaAs, out of compound semiconductors expressed by formula (AlxGa1-x)yIn1-yP (where, 0≦x≦1, 0≦y≦1), are stacked in this order, and having the (100) surface appeared on the main surface thereof, and GaP transparent semiconductor layers 20, 90 stacked on the light emitting layer section 24 as being agreed with the crystal orientation thereof, so that the {100} surfaces appear on the side faces of the GaP transparent semiconductor layer. Accordingly, there can be provided a method of fabricating a light emitting device having the AlGaInP light emitting layer section and the GaP transparent semiconductor layers, less causative of failures such as edge chipping during the dicing.
    • 通过基于双异质结构对具有发光层部分24的发光器件晶片进行切割来获得发光器件芯片,其中第一导电型包覆层6,有源层5和第二导电型包层 (Al x Ga 1-x)y In 1-y P表示的化合物半导体中的每一个由具有允许与GaAs晶格匹配的组成的化合物半导体构成,其中,0≤x≤1,0< y <= 1)按顺序堆叠,并且在其主表面上出现(100)表面,并且与发光层部分24堆叠在一起的GaP透明半导体层20,90与晶体取向一致 ,使得{100}表面出现在GaP透明半导体层的侧面上。 因此,可以提供一种制造具有AlGaInP发光层部分和GaP透明半导体层的发光器件的方法,其不利于在切割期间的边缘切屑等故障。